Mariko Suzuki
Mariko Suzuki, Bunkyo-Ku JP
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20090312492 | POLYROTAXANES AND MATERIAL HAVING POLYROTAXANE, CROSSLINKED POLYROTAXANES AND MATERIAL HAVING THE CROSSLINKED POLYROTAXANE, AND PROCESSES FOR PRODUCING THESE - A polyrotaxane which has enhanced solubility and is soluble in various solvents, 2) a polyrotaxane which is reversibly responsive to an external stimulus, 3) a chemically crosslinked polyrotaxane which has a high Young's modulus and a high elongation and has a high transmittance, and/or 4) a chemically crosslinked polyrotaxane which is reversibly responsive to an external stimulus; and/or a material containing any of these; and/or processes for producing these. The polyrotaxanes each comprises: a pseudo-polyrotaxane having a structure constituted of cyclic molecules and a linear molecule with which the holes of the cyclic molecules are pierced to form a clathrate; and a blocking group disposed at each end of the pseudo-polyrotaxane so as to prevent the cyclic molecules from leaving. The cyclic molecules have a functional group represented by the following formula (I) and at least one functional group selected among functional groups represented by the following formulae (II-1) to (II-6). | 12-17-2009 |
20110105688 | POLYROTAXANE, CROSSLINKED STRUCTURE COMPRISING POLYROTAXANE AND POLYMER, AND PROCESSES FOR PRODUCING THESE - A process is provided by which a polyrotaxane including cyclic molecules having a relatively long graft chain is easily obtained. Also provided is a polyrotaxane which includes cyclic molecules having a radical polymerization initiation site and is for use as a raw material in the process. The polyrotaxane comprises: a pseudo-polyrotaxane comprising cyclic molecules clathrated with a linear molecule, the cavities of the cyclic molecules having been pierced by the linear molecule; and blocking groups disposed respectively at both ends of the pseudo-polyrotaxane so as not to release the cyclic molecules. The cyclic molecules in the polyrotaxane have a radical polymerization initiation site. | 05-05-2011 |
Mariko Suzuki, Yokohama-Shi JP
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20080245553 | INTERCONNECTION, ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING AN ELECTRONIC DEVICE - An interconnection includes a bundle of conductive members, each of the conductive members being made of carbon nanotube having an end connected to a first conductive film, and another end connected to a second conductive film separated from the first conductive film; and carbon particles each having a diamond crystal structure, dispersed between the conductive members. | 10-09-2008 |
20110050080 | ELECTRON EMISSION ELEMENT - According to the embodiment, an electron emission element includes a conductive substrate, a first diamond layer of a first conductivity type formed on the conductive substrate, and a second diamond layer of the first conductivity type formed on the first diamond layer. Thereby, it becomes possible to provide the electron emission element having a high electron emission amount and a high current density even in a low electric field at low temperature and the electron emission apparatus using this electron emission element. | 03-03-2011 |
Mariko Suzuki, Kanagawa JP
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20080203885 | THERMAL-ELECTRON SOURCE - A thermal-electron source includes a substrate; and a thermionic cathode having conductivity, and being provided on the substrate, and including a plurality of microscopic pores on a surface of the thermionic cathode. | 08-28-2008 |
20080218077 | DISCHARGE LIGHT-EMITTING DEVICE - A discharge light-emitting device includes a chamber that encapsulates a discharge gas and has a light permeable portion; and at least a pair of electrodes that are arranged in the chamber and are made of a wide-gap semiconductor, wherein the pair of electrodes are connected to each other and at least a portion where the electrodes are connected to each other is formed into a narrow portion. | 09-11-2008 |
20100072054 | CARBON NANOTUBE MANUFACTURING APPARATUS, CARBON NANOTUBE MANUFACTURING METHOD, AND RADICAL PRODUCING APPARATUS - A carbon nanotube manufacturing apparatus includes a plasma generating unit that generates plasma including ions, radicals, and electrons, from gas; a carbon nanotube manufacturing unit that manufactures carbon nanotubes from the radicals; a shielding electrode unit that is provided between the plasma generating unit and the carbon nanotube manufacturing unit and prevents the ions and the electrons from entering the carbon nanotube manufacturing unit; and a bias applying unit that applies a voltage to the shielding electrode unit, wherein the shielding electrode unit includes at least two first shielding electrodes that are arranged one above another, each of the first shielding electrodes having at least one opening. | 03-25-2010 |
20100209704 | CARBON NANOTUBE GROWING PROCESS, AND CARBON NANOTUBE BUNDLE FORMED SUBSTRATE - In the growth of carbon nanotubes, the aggregation of catalytic fine particles therefor is a problem. In order to realize the growth of carbon nanotubes into a high density, the carbon nanotube growing process includes a first plasma treatment step of treating a surface having catalytic fine particles with a plasma species generated from a gas which contains at least hydrogen or a rare gas without carbon element, a second plasma treatment step of forming a carbon layer on the surface of the catalytic fine particles by a plasma generated from a gas which contains at least a hydrocarbon after the first plasma treatment step, and a carbon nanotube growing step of growing carbon nanotubes by use of a plasma generated from a gas which contains at least a hydrocarbon after the second plasma treatment step. | 08-19-2010 |
20110147177 | STRUCTURE, ELECTRONIC DEVICE, AND METHOD FOR FABRICATING A STRUCTURE - A structure includes a conductive film ( | 06-23-2011 |
20130075757 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device according to the present embodiment includes a diamond substrate having a surface plane inclined from a (100) plane in a range of 10 degrees to 40 degrees in a direction of <011> ±10 degrees, and an n-type diamond semiconductor layer containing phosphorus (P) and formed above the surface plane described above. | 03-28-2013 |
20130075929 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device of an embodiment includes: a substrate; a first catalytic metal film on the substrate; graphene on the first catalytic metal film; an interlayer insulating film on the graphene; a contact hole penetrating through the interlayer insulating film; a conductive film at the bottom portion of the contact hole, the conductive film being electrically connected to the graphene; a second catalytic metal film on the conductive film, the second catalytic metal film being subjected to plasma processing with at least one kind of gas selected from hydrogen, nitrogen, ammonia, and rare gas; and carbon nanotubes on the second catalytic metal film. | 03-28-2013 |
20140117548 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device of an embodiment includes: a substrate on which a semiconductor circuit is formed; an interlayer insulating film in which a contact hole is formed on the substrate; a catalyst metal film on a side wall of the contact hole; catalyst metal particles on a bottom of the contact hole; graphene on the catalyst metal film; and carbon nanotubes, which penetrates the contact hole, on the catalyst metal particles. | 05-01-2014 |
20140145210 | SEMICONDUCTOR DEVICE - A semiconductor device according to an embodiment includes: a first diamond semiconductor layer of a first conductivity type including a main surface having a first plane orientation; a trench structure formed in the first diamond semiconductor layer; a second diamond semiconductor layer formed on the first diamond semiconductor layer in the trench structure and having a lower dopant concentration than the first diamond semiconductor layer; a third diamond semiconductor layer of a second conductivity type formed on the second diamond semiconductor layer and having a higher dopant concentration than the second diamond semiconductor layer; a first electrode electrically connected to the first diamond semiconductor layer; and a second electrode electrically connected to the third diamond semiconductor layer. | 05-29-2014 |
20140284798 | GRAPHENE WIRING AND METHOD OF MANUFACTURING THE SAME - A graphene wiring has a substrate a catalyst layer on the substrate a first graphene sheet layer on the catalyst layer and a second graphene sheet layer on the first graphene layer. The second graphene layer comprises multilayer graphene sheets. The multilayer graphene sheets are intercalated with an atomic or molecular species. | 09-25-2014 |
20140284799 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device has a substrate a lower layer wiring on the substrate, an interlayer dielectric on the lower layer wiring having a contact hole, a catalyst metal layer at the bottom of the contact hole having catalyst metal particles, multi-walled carbon nanotubes on the catalyst metal layer passing through the contact hole, and an upper layer wiring on the multi-walled carbon nanotubes. The multi-walled carbon nanotubes are intercalated with an atomic or molecular species. | 09-25-2014 |
20140284800 | GRAPHENE WIRING - A graphene wiring has a substrate, a catalyst layer on the substrate, a graphene layer on the catalyst layer, and a dopant layer on a side surface of the graphene layer. An atomic or molecular species is intercalated in the graphene layer or disposed on the graphene layer. | 09-25-2014 |
Mariko Suzuki, Yokohama JP
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20150060885 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device according to an embodiment includes an i-type or a p-type first diamond semiconductor layer, an n-type second diamond semiconductor layer provided on the first diamond semiconductor layer, a mesa structure and an n-type first diamond semiconductor region provided on the side surface. The mesa structure includes the first diamond semiconductor layer, the second diamond semiconductor layer, a top surface with a plane orientation of ±10 degrees or less from a {100} plane, and a side surface inclined by 20 to 90 degrees with respect to a direction of <011>±20 degrees from the {100} plane. The first diamond semiconductor region is in contact with the second diamond semiconductor layer and has an n-type impurity concentration lower than an n-type impurity concentration of the second diamond semiconductor layer. | 03-05-2015 |
20150236097 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device of an embodiment includes a p-type first diamond semiconductor layer, a p-type second diamond semiconductor layer disposed on the first diamond semiconductor layer, a plurality of n-type third diamond semiconductor layers disposed on the second diamond semiconductor layer, and a first electrode disposed on the second diamond semiconductor and the third diamond semiconductor layers. The p-type second diamond semiconductor layer has a p-type impurity concentration lower than a p-type impurity concentration of the first diamond semiconductor layer and has oxygen-terminated surfaces. Each of the third diamond semiconductor layers has an oxygen-terminated surface. The first electrode forms first junctions between the first electrode and the second diamond semiconductor. The first electrode forms second junctions between the first electrode and the third diamond semiconductor layers. The first junctions and the second junctions are Schottky junctions. | 08-20-2015 |
Mariko Suzuki, Tokyo JP
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20150061824 | INFORMATION PROCESSING DEVICE, DETERMINATION METHOD, AND NON-TRANSITORY COMPUTER READABLE STORAGE MEDIUM - An information processing device includes a collecting unit that collects biological information of a first user and a second user. The information processing device includes a specifying unit that specifies an emotion of the first user toward the second user and an emotion of the second user toward the first user using the biological information acquired by the collecting unit. The information processing device includes a determining unit that determines whether or not to provide information on the second user to the first user based on respective emotions specified by the specifying unit. | 03-05-2015 |
20150061825 | INFORMATION PROCESSING DEVICE, CONTROL METHOD, AND A NON-TRANSITORY COMPUTER READABLE STORAGE MEDIUM - An information processing device includes a collecting unit which collects user's biological information. The information processing device includes a determining unit which determines an emotion of the user by using the biological information collected by the collecting unit. The information processing device includes an output unit which outputs in association with information representing the user and the emotion of the user determined by the determining unit to terminal devices which are used by other users. | 03-05-2015 |
Mariko Suzuki, Numazu-Shi JP
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20150303421 | BATTERY PACK AND POWER SUPPLY UNIT - A battery pack comprises a battery unit containing a plurality of batteries connected in series or in parallel; a lower frame housing a portion of a side of a bottom of the battery unit and mounted on an shelf plate top surface; a upper frame housing a portion on the side of a top surface of the battery unit as a surface opposed to the bottom and holding the battery unit by being connected to the lower frame; and a bracket mounted on the lower frame and fixed to the shelf plate top surface. | 10-22-2015 |