| Patent application number | Description | Published |
|---|
| 20090200264 | Method For Making A Spin Valve Nano-Contact Entering The Constituition Of A Radio-Frequency Oscillator - This method for making a nano-contact on a spin valve for the purposes of constituting a radio-frequency oscillator, consists, after deposition of the magnetic stack constituting the spin valve on a lower electrode in depositing on said magnetic stack a metal layer known as a “barrier” layer; in depositing on this “barrier” layer another metal layer; in depositing locally on this metal layer a hard mask; in subjecting the assembly to a first selective etching step of the metal layer constituting the injector through the hard mask, said metal layer being over-etched during this step under the hard mask in order to give the nano-contact its final dimension; in subjecting the assembly so obtained to a second selective etching step, able to induce the partial removal of the barrier layer and of the magnetic stack substantially on the periphery of the hard mask; in encapsulating the assembly obtained in a dielectric; in planarizing the encapsulated assembly so obtained until ending plumb with the residual layer of the hard mask or of the injector; and finally in putting the conductive upper electrode in place. | 08-13-2009 |
| 20090250775 | MAGNETIC DEVICE WITH INTEGRATED MAGNETO-RESISTIVE STACK - This magnetic device integrates a magneto-resistive stack, the stack comprising at least two layers made out of a ferromagnetic material, separated from each other by a layer of non-magnetic material; and means for causing an electron current to flow perpendicular to the plane of the layers, with at least one integrated nano-contact intended to inject the current into the magneto-resistive stack. The nano-contact is made in a bilayer composed of a solid electrolyte on which has been deposited a soluble electrode composed of a metal, and at least partially dissolved in the electrolyte. | 10-08-2009 |
| 20100134196 | SPIN-VALVE OR TUNNEL-JUNCTION RADIO-FREQUENCY OSCILLATOR - This radio-frequency oscillator includes a magnetoresistive device in which an electric current is able to flow. The magnetoresistive device includes a first magnetic layer, known as a “trapped layer”, whereof the magnetization is of fixed direction. The magnetoresistive device further includes a second magnetic layer known as a “free layer” and a non-magnetic layer, known as an “intermediate layer”, interposed between the first and second layer, known as the intermediate layer. The oscillator further includes means capable of causing an electron current to flow in said layers constituting the aforementioned stack and in a direction perpendicular to the plane which contains said layers. One of the three layers constituting the magnetoresistive device includes at least one constriction zone of the electric current passing through it. | 06-03-2010 |
| 20110266642 | METHOD FOR PRODUCING A MAGNETIC TUNNEL JUNCTION AND MAGNETIC TUNNEL JUNCTION THUS OBTAINED - According to this method for producing a magnetic tunnel junction, a film of a dielectric material capable of acting as a tunnel barrier is deposited between two nanocrystalline or amorphous magnetic films. The dielectric material constituting the tunnel barrier consists of an at least partially crystalline perovskite, and said material is deposited by ion beam sputtering in a vacuum chamber. | 11-03-2011 |
