Mariappan
Mariappan Balraj, Bangalore IN
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20130297866 | Smart Zoning Using Device Alias Database - Systems and methods are disclosed to implement smart zoning using device alias database that preserves TCAM space. Embodiments may consider device types to save an administrator's efforts from splitting application specific zones into two-member (initiator and target) zones. | 11-07-2013 |
Mariappan Chelliah US
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20150274672 | SUBSTITUTED SPIROPIPERIDINYL COMPOUNDS USEFUL AS GPR120 AGONISTS - The present invention relates to a compound represented by formula (I): and pharmaceutically acceptable salts thereof are disclosed as useful for treating or preventing diabetes, hyperlipidemia, obesity, inflammation related disorders, and related diseases and conditions. The compounds are useful as agonists of the G-protein coupled receptor GPR120. Pharmaceutical compositions and methods of treatment are also included. | 10-01-2015 |
Mariappan Chelliah, Edison, NJ US
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20150274672 | SUBSTITUTED SPIROPIPERIDINYL COMPOUNDS USEFUL AS GPR120 AGONISTS - The present invention relates to a compound represented by formula (I): and pharmaceutically acceptable salts thereof are disclosed as useful for treating or preventing diabetes, hyperlipidemia, obesity, inflammation related disorders, and related diseases and conditions. The compounds are useful as agonists of the G-protein coupled receptor GPR120. Pharmaceutical compositions and methods of treatment are also included. | 10-01-2015 |
Mariappan Chidambarakumar, Tamil Nadu IN
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20100076099 | Biodegradable polymeric nanocomposite compositions particularly for packaging - Specific polymer blends of polylactic acid (PLA) and polyhydroxybutyrate (PHB) and poly-(butylenes adipate-co-terephthalate (PBAT) as a fatty acid quaternary ammonium modified clay. The blends are particularly useful for barrier packaging. | 03-25-2010 |
Mariappan Hariharaputhiran, Ballston, NY US
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20150091094 | DEVICES AND METHODS OF FORMING FINFETS WITH SELF ALIGNED FIN FORMATION - Devices and methods for forming semiconductor devices with FinFETs are provided. One method includes, for instance: obtaining an intermediate semiconductor device with a substrate and at least one shallow trench isolation region; depositing a hard mask layer over the intermediate semiconductor device; etching the hard mask layer to form at least one fin hard mask; and depositing at least one sacrificial gate structure over the at least one fin hard mask and at least a portion of the substrate. One intermediate semiconductor device includes, for instance: a substrate with at least one shallow trench isolation region; at least one fin hard mask over the substrate; at least one sacrificial gate structure over the at least one fin hard mask; at least one spacer disposed on the at least one sacrificial gate structure; and at least one pFET region and at least one nFET region grown into the substrate. | 04-02-2015 |
20150115418 | DEVICES AND METHODS OF FORMING FINS AT TIGHT FIN PITCHES - Devices and methods for forming semiconductor devices with fins at tight fin pitches are provided. One method includes, for instance: obtaining an intermediate semiconductor device; growing an epi layer over the substrate; forming a doped layer below the epi layer; depositing a first oxide layer on the epi layer; applying a dielectric material on the first oxide layer; and depositing a lithography stack on the dielectric material. One intermediate semiconductor device includes, for instance: a substrate with at least one n-well region and at least one p-well region; a doped layer over the substrate; an epi layer over the doped layer; a first oxide layer over the epi layer; a dielectric layer over the first oxide layer; and a lithography stack over the dielectric layer. | 04-30-2015 |
Mariappan Hariharaputhiran, Ballston Lake, NY US
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20150214345 | DOPANT DIFFUSION BARRIER TO FORM ISOLATED SOURCE/DRAINS IN A SEMICONDUCTOR DEVICE - Approaches for isolating source and drain regions in an integrated circuit (IC) device (e.g., a metal-oxide-semiconductor field-effect transistor (MOSFET)) are provided. Specifically, the device comprises a gate structure formed over a substrate, a source and drain (S/D) embedded within the substrate adjacent the gate structure, and a liner layer (e.g., silicon-carbon) between the S/D and the substrate. In one approach, the liner layer is formed atop the S/D as well. As such, the liner layer formed in the junction prevents dopant diffusion from the source/drain. | 07-30-2015 |
20150270175 | PARTIALLY CRYSTALLIZED FIN HARD MASK FOR FIN FIELD-EFFECT-TRANSISTOR (FINFET) DEVICE - Provided herein are approaches for forming a fin field-effect-transistor (FinFET) device using a partially crystallized fin hard mask. Specifically, a hard mask is patterned over a substrate, and the FinFET device is annealed to form a set of crystallized hard mask elements adjacent a set of non-crystallized hard mask elements. A masking structure is provided over a first section of the patterned hard mask to prevent the set of non-crystallized hard mask elements from being crystallized during the anneal. During a subsequent fin cut process, the non-crystallized mask elements are removed, while crystallized mask elements remain. A set of fins is then formed in the FinFET device according to the location(s) of the crystallized mask elements. | 09-24-2015 |
20150279684 | METHOD OF FORMING SEMICONDUCTOR FINS - Embodiments of the present invention provide methods of removing fin portions from a finFET. At a starting point, a high-K dielectric layer is disposed on a substrate. A fin hardmask and lithography stack is deposited on the high-k dielectric. A fin hardmask is exposed, and a first portion of the fin hardmark is removed. The lithography stack is removed. A second portion of the fin hardmask is removed. Fins are formed. A gap fill dielectric is deposited and recessed. | 10-01-2015 |
Mariappan Kaliappan, Madurai IN
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20140275535 | ACID ADDITION SALTS OF BOSENTAN - The present invention relates to the stable acid addition salts of Bosentan that are useful for the purification of Bosentan base. In particular, the Bosentan acid addition salt is selected from Bosentan citrate and Bosentan tartrate. | 09-18-2014 |