Patent application number | Description | Published |
20080213628 | Perpendicular recording media with Ta transition layer to improve magnetic and corrosion resistance performances and method of manufacturing the same - A perpendicular magnetic recording medium comprising a substrate, an underlayer, a Ta-containing seedlayer, a magnetic layer, wherein the underlayer comprises a soft magnetic material and the Ta-containing seedlayer is between the underlayer and the magnetic layer, and a process for improving corrosion resistance of the recording medium and for manufacturing the recording medium are disclosed. | 09-04-2008 |
20100007989 | HIGH DENSITY GRANULAR PERPENDICULAR RECORDING MEDIA FOR MECHANICAL RELIABILITY AND CORROSION RESISTANCE - An embodiment of the invention relates to a perpendicular magnetic recording medium comprising (1) a substrate, (2) an interlayer comprising hexagonal columns and (3) a magnetic layer, wherein the magnetic layer is deposited applying a bias voltage to the substrate such that the magnetic layer comprises magnetic grains having substantially no sub-grains within the magnetic layer, and the magnetic layer has perpendicular magnetic anisotropy. | 01-14-2010 |
20100020441 | METHOD AND MANUFACTURE PROCESS FOR EXCHANGE DECOUPLED FIRST MAGNETIC LAYER - A perpendicular magnetic recording medium having a dual-layer magnetic film is disclosed. The bottom layer is completely exchange decoupled, and the top layer contains a certain amount of exchange coupling optimized for recording performance. Preferably, the bottom magnetic layer contains stable oxide material (for example, TiO | 01-28-2010 |
20100124671 | LOW COUPLING OXIDE MEDIA (LCOM) - A low-coupling perpendicular magnetic recording media comprising a magnetic storage layer and at least one low saturation magnetization layer. The magnetic storage layer has a saturation magnetization between about 400-900 emu/cm | 05-20-2010 |
20110076515 | Low-Coupling Oxide Media (LCOM) - A low-coupling perpendicular magnetic recording media comprising a magnetic storage layer and at least one low saturation magnetization layer. The magnetic storage layer has a saturation magnetization between about 400-900 emu/cm3 and the at least one low saturation magnetization layer has a saturation magnetization below that of the magnetic storage layer. | 03-31-2011 |
20130045394 | Low-Coupling Oxide Media (LCOM) - A low-coupling perpendicular magnetic recording media comprising a magnetic storage layer and at least one low saturation magnetization layer. The magnetic storage layer has a saturation magnetization between about 400-900 emu/cm3 and the at least one low saturation magnetization layer has a saturation magnetization below that of the magnetic storage layer. | 02-21-2013 |
20130133727 | SEMICONDUCTOR GRAIN MICROSTRUCTURES FOR PHOTOVOLTAIC CELLS - Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In particular implementations, the novel photovoltaic structures can be fabricated using low cost and scalable processes, such as magnetron sputtering. In a particular implementation, a photovoltaic cell includes a photoactive conversion layer comprising one or more granular semiconductor and oxide layers with nanometer-size semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer can be a disposed between electrode layers. In some implementations, multiple semiconductor and oxide layers can be deposited. These so-called semiconductor and oxide layers absorb sun light and convert solar irradiance into electrical free energy. | 05-30-2013 |
20130228217 | SEMICONDUCTOR GRAIN AND OXIDE LAYER FOR PHOTOVOLTAIC CELLS - Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In a particular implementation, a photovoltaic cell includes a granular semiconductor and oxide layer with nanometer-size absorber semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer is disposed between electron and hole conducting layers. In some implementations, multiple semiconductor and oxide layers can be deposited. | 09-05-2013 |