| Patent application number | Description | Published |
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| 20080225921 | Projection Exposure System, Beam Delivery System and Method of Generating a Beam of Light - A beam delivery system of a projection exposure system comprises a laser generating a beam of laser light from a plurality of longitudinal laser modes in a cavity, wherein light generated by a single longitudinal laser mode has an average line width λ | 09-18-2008 |
| 20080239273 | Illumination system and polarizer for a microlithographic projection exposure apparatus - An illumination system for illuminating a reticle that moves along a scanning direction in a microlithographic projection exposure apparatus has an optical axis and an optical component producing an illumination angle distribution of the projection light. In accordance with the illumination angle distribution, a plurality of poles is illuminated in a pupil plane of the illumination system. The poles form an arrangement that is only mirror-symmetrical with respect to an axis that is orthogonal to the optical axis of the illumination, but neither parallel nor perpendicular to the scanning direction. | 10-02-2008 |
| 20080258070 | EUV ILLUMINATION SYSTEM WITH A SYSTEM FOR MEASURING FLUCTUATIONS OF THE LIGHT SOURCE - The disclosure relates to an EUV (extreme ultraviolet) illumination system. The system can include at least one EUV light source, and an aperture stop and sensor arrangement for the measurement of intensity fluctuations and/or position changes of the EUV light source, in particular in the range of the effectively utilized wavelengths, or of one of the intermediate images of the EUV light source. The aperture stop and sensor arrangement can include an aperture stop and an EUV position sensor. The aperture stop and sensor arrangement can be arranged in such a way that the aperture stop allows a certain solid angle range of the radiation originating from the EUV light source or from one of its intermediate images to fall on the EUV position sensor. | 10-23-2008 |
| 20090021716 | ILLUMINATION SYSTEM FOR A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - Illumination systems for microlithographic projection exposure apparatus, as well as related systems, components and methods are disclosed. In some embodiments, an illumination system includes one or more scattering structures and an optical integrator that produces a plurality of secondary light sources. | 01-22-2009 |
| 20090262324 | ILLUMINATION OPTICS FOR PROJECTION MICROLITHOGRAPHY AND RELATED METHODS - A microlithographic projection exposure apparatus ( | 10-22-2009 |
| 20090323043 | ILLUMINATION SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - An illumination system of a microlithographic projection exposure apparatus can include at least one transmission filter which has a different transmittance at least at two positions and which is arranged between a pupil plane and a field plane). The transmittance distribution can be determined such that it has field dependent correcting effects on the ellipticity. In some embodiments the telecentricity and/or the irradiance uniformity is not affected by this correction. | 12-31-2009 |
| 20100002217 | ILLUMINATION SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - The disclosure relates to an illumination system of a microlithographic projection exposure apparatus. The illumination system can include a depolariser which in conjunction with a light mixing system disposed downstream in the light propagation direction at least partially causes effective depolarisation of polarised light impinging on the depolariser. The illumination system can also include a microlens array which is arranged upstream of the light mixing system in the light propagation direction. The microlens array can include a plurality of microlenses arranged with a periodicity. The depolariser can be configured so that a contribution afforded by interaction of the depolariser with the periodicity of the microlens array to a residual polarisation distribution occurring in a pupil plane arranged downstream of the microlens array in the light propagation direction has a maximum degree of polarisation of not more than 5%. | 01-07-2010 |
| 20100039629 | METHOD AND DEVICE FOR MONITORING MULTIPLE MIRROR ARRAYS IN AN ILLUMINATION SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - An illumination system of a microlithographic projection exposure apparatus has a pupil surface and an essentially flat arrangement of desirably individually drivable beam deviating elements for variable illumination of the pupil surface. Each beam deviating element allows deviation of a projection light beam incident on it to be achieved as a function of a control signal applied to the beam deviating element. A measurement illumination instrument directs a measurement light beam, independent of the projection light beams, onto a beam deviating element. A detector instrument records the measurement light beam after deviation by the beam deviating element. An evaluation unit determines the deviation of the projection light beam from measurement signals provided by the detector instrument. | 02-18-2010 |
| 20100060988 | CORRECTION OF OPTICAL ELEMENTS BY CORRECTION LIGHT IRRADIATED IN A FLAT MANNER - The disclosure relates to a correction light device for the irradiation of optical elements of an optical arrangement, in particular a lens, such a microlithography lens having a correction light, which include at least one correction light source and at least one mirror arrangement that deflects the light from the correction light source in the beam path to the optical element such that at least part of at least one surface of at least one optical element of the optical arrangement are irradiated in a locally and/or temporally variable fashion. The correction light strikes the surface of the optical element at a flat angle such that the obtuse angle between the optical axis of the optical arrangement at the location of the optical element and the correction light beam is less than or equal to 105°. | 03-11-2010 |
| 20100195077 | ILLUMINATION SYSTEM FOR A MICROLITHOGRAPHY PROJECTION EXPOSURE INSTALLATION - An illumination system for a microlithography projection exposure installation is used to illuminate an illumination field with the light from a primary light source ( | 08-05-2010 |
| 20100283984 | MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - A projection exposure apparatus for microlithography comprises illumination optics for illuminating object field points of an object field in an object plane is disclosed. The illumination optics have, for each object field point of the object field, an exit pupil associated with the object point, where sin(γ) is a greatest marginal angle value of the exit pupil. The illumination optics include a multi-mirror array that includes a plurality of mirrors to adjust an intensity distribution in exit pupils associated to the object field points. The illumination optics further contain at least one optical system to temporally stabilize the illumination of the multi-mirror array so that, for each object field point, the intensity distribution in the associated exit pupil deviates from a desired intensity distribution in the associated exit pupil in the case of a centroid angle value sin(β) by less than 2% expressed in terms of the greatest marginal angle value sin(γ) of the associated exit pupil and/or, in the case of ellipticity by less than 2%, and/or in the case of a pole balance by less than 2%. | 11-11-2010 |
| 20100283985 | MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - A projection exposure apparatus for microlithography comprises illumination optics for illuminating object field points of an object field in an object plane is disclosed. The illumination optics have, for each object field point of the object field, an exit pupil associated with the object point, where sin(γ) is a greatest marginal angle value of the exit pupil. The illumination optics include a multi-mirror array that includes a plurality of mirrors to adjust an intensity distribution in exit pupils associated to the object field points. The illumination optics further contain at least one optical system to temporally stabilize the illumination of the multi-mirror array so that, for each object field point, the intensity distribution in the associated exit pupil deviates from a desired intensity distribution in the associated exit pupil in the case of a centroid angle value sin(β) by less than 2% expressed in terms of the greatest marginal angle value sin(γ) of the associated exit pupil and/or, in the case of ellipticity by less than 2%, and/or in the case of a pole balance by less than 2%. | 11-11-2010 |
| 20100309450 | FILTER DEVICE FOR THE COMPENSATION OF AN ASYMMETRIC PUPIL ILLUMINATION - The invention relates to a filter device for an illumination system, especially for the correction of the illumination of the illuminating pupil, including a light source, with the illumination system being passed through by a bundle of illuminating rays from the light source to an object plane, with the bundle of illuminating rays impinging upon the filter device, including at least one filter element which can be introduced into the beam path of the bundle of illuminating rays, with the filter element including an actuating device, so that the filter element can be brought with the help of the actuating device into the bundle of illuminating rays. | 12-09-2010 |
| 20110079737 | EUV ILLUMINATION SYSTEM WITH A SYSTEM FOR MEASURING FLUCTUATIONS OF THE LIGHT SOURCE - The disclosure relates to an EUV (extreme ultraviolet) illumination system. The system can include at least one EUV light source, and an aperture stop and sensor arrangement for the measurement of intensity fluctuations and/or position changes of the EUV light source, in particular in the range of the effectively utilized wavelengths, or of one of the intermediate images of the EUV light source. The aperture stop and sensor arrangement can include an aperture stop and an EUV position sensor. The aperture stop and sensor arrangement can be arranged in such a way that the aperture stop allows a certain solid angle range of the radiation originating from the EUV light source or from one of its intermediate images to fall on the EUV position sensor. | 04-07-2011 |
