Patent application number | Description | Published |
20080207007 | Plasma Enhanced Cyclic Chemical Vapor Deposition of Silicon-Containing Films - The present invention is a process of plasma enhanced cyclic chemical vapor deposition of silicon nitride, silicon carbonitride, silicon oxynitride, silicon carboxynitride, and carbon doped silicon oxide from alkylaminosilanes having Si—H | 08-28-2008 |
20080271640 | Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants - A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula Si | 11-06-2008 |
20090069588 | Precursors for CVD Silicon Carbo-nitride Films - Classes of liquid aminosilanes have been found which allow for the production of silicon-containing films. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films. | 03-12-2009 |
20090137100 | Tellurium Precursors for GST Films in an ALD or CVD Process - The present invention is a process of making a germanium-antimony-tellurium alloy film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silyltellurium precursor is used as a source of tellurium for the alloy film and is reacted with an alcohol during the deposition process. | 05-28-2009 |
20090142881 | Tellurium (Te) Precursors for Making Phase Change Memory Materials - Tellurium (Te)-containing precursors, Te containing chalcogenide phase change materials are disclosed in the specification. A method of making Te containing chalcogenide phase change materials using ALD, CVD or cyclic CVD process is also disclosed in the specification in which at least one of the disclosed tellurium (Te)-containing precursors is introduced to the process. | 06-04-2009 |
20090191330 | Antimony Precursors for GST Films in ALD/CVD Processes - The present invention is a process of making a germanium-antimony-tellurium alloy film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silylantimony precursor is used as a source of antimony for the alloy film. Novel silylantimony compounds are also disclosed. | 07-30-2009 |
20090280052 | Binary and Ternary Metal Chalcogenide Materials and Method of Making and Using Same - This invention discloses the synthesis of metal chalcogenides using chemical vapor deposition (CVD) process, atomic layer deposition (ALD) process, or wet solution process. Ligand exchange reactions of organosilyltellurium or organosilylselenium with a series of metal compounds having neucleophilic substituents generate metal chalcogenides. This chemistry is used to deposit germanium-antimony-tellurium (GeSbTe) and germanium-antimony-selenium (GeSbSe) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices. | 11-12-2009 |
20100009546 | Aminosilanes for Shallow Trench Isolation Films - The present invention is a process for spin-on deposition of a silicon dioxide-containing film under oxidative conditions for gap-filling in high aspect ratio features for shallow trench isolation used in memory and logic circuit-containing semiconductor substrates, such as silicon wafers having one or more integrated circuit structures contained thereon, comprising the steps of:
| 01-14-2010 |
20100041243 | Precursors for Depositing Silicon-containing Films and Methods for Making and Using Same - Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containing film comprising the following formula (I): | 02-18-2010 |
20100120262 | Amino Vinylsilane Precursors for Stressed SiN Films - The present invention is a method to increase the intrinsic compressive stress in plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) and silicon carbonitride (SiCN) thin films, comprising depositing the film from an amino vinylsilane-based precursor. More specifically the present invention uses the amino vinylsilane-based precursor selected from the formula: [RR | 05-13-2010 |
20100233886 | Dielectric Films Comprising Silicon And Methods For Making Same - Described herein are methods of forming dielectric films comprising silicon, such as, but not limited to, silicon oxide, silicon oxycarbide, silicon carbide, and combinations thereof, that exhibit at least one of the following characteristics: low wet etch resistance, a dielectric constant of 6.0 or below, and/or can withstand a high temperature rapid thermal anneal process. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer. | 09-16-2010 |
20100291321 | Dielectric Barrier Deposition Using Nitrogen Containing Precursor - A process for forming a silicon carbonitride barrier dielectric film between a dielectric film and a metal interconnect of an integrated circuit substrate, comprising the steps of;
| 11-18-2010 |
20100304047 | Low Temperature Deposition of Silicon-Containing Films - This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition. | 12-02-2010 |
20110143032 | Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films With Low Dielectric Constants - A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula Si | 06-16-2011 |
20110165346 | Precursors for CVD Silicon Carbo-Nitride Films - Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula Si | 07-07-2011 |
20110215445 | Methods to Prepare Silicon-Containing Films - Described herein are methods of forming dielectric films comprising silicon, oxide, and optionally nitrogen, carbon, hydrogen, and boron. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer. | 09-08-2011 |
20110262642 | Process for Producing Silicon and Oxide Films from Organoaminosilane Precursors - A method for depositing a silicon containing film on a substrate using an organoaminosilane is described herein. The organoaminosilanes are represented by the formulas: | 10-27-2011 |
20120034767 | Method of Making a Multicomponent Film - Described herein is a method and liquid-based precursor composition for depositing a multicomponent film. In one embodiment, the method and compositions described herein are used to deposit Germanium Tellurium (GeTe), Antimony Tellurium (SbTe), Antimony Germanium (SbGe), Germanium Antimony Tellurium (GST), Indium Antimony Tellurium (IST), Silver Indium Antimony Tellurium (AIST), Cadmium Telluride (CdTe), Cadmium Selenide (CdSe), Zinc Telluride (ZnTe), Zinc Selenide (ZnSe), Copper indium gallium selenide (CIGS) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices. | 02-09-2012 |
20120103857 | Cylinder Surface Treatment For Monochlorosilane - The present invention is a container and a processing for passivating the internal surface of the container to store monochlorosilane in a stable manner without degradation of the monochlorosilane. Various container surface modifications have been identified to reduce surface reactions to acceptable levels. Some of the described surface modifications result in significant reduction in monochlorosilane instability. | 05-03-2012 |
20120128897 | Organoaminosilane Precursors and Methods for Depositing Films Comprising Same - Described herein are precursors and methods of forming dielectric films. In one aspect, there is provided a silicon precursor having the following formula I: | 05-24-2012 |
20120148745 | Aminovinylsilane for CVD and ALD SiO2 Films - This invention related to method to form silicon dioxide films that have extremely low wet etch rate in HF solution using a thermal CVD process, ALD process or cyclic CVD process in which the silicon precursor is selected from one of:
| 06-14-2012 |
20120171378 | Binary and Ternary Metal Chalcogenide Materials and Method of Making and Using Same - This invention discloses the synthesis of metal chalcogenides using chemical vapor deposition (CVD) process, atomic layer deposition (ALD) process, or wet solution process. Ligand exchange reactions of organosilyltellurium or organosilylselenium with a series of metal compounds having neucleophilic substituents generate metal chalcogenides. This chemistry is used to deposit germanium-antimony-tellurium (GeSbTe) and germanium-antimony-selenium (GeSbSe) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices. | 07-05-2012 |
20120171874 | Plasma Enhanced Cyclic Chemical Vapor Deposition of Silicon- Containing Films - The present invention is a process of plasma enhanced cyclic chemical vapor deposition of silicon nitride, silicon carbonitride, silicon oxynitride, silicon carboxynitride, and carbon doped silicon oxide from alkylaminosilanes having Si—H | 07-05-2012 |
20120220076 | Method of Making a Multicomponent Film - Described herein is a method and liquid-based precursor composition for depositing a multicomponent film. In one embodiment, the method and compositions described herein are used to deposit Germanium Tellurium (GeTe), Antimony Tellurium (SbTe), Antimony Germanium (SbGe), Germanium Antimony Tellurium (GST), Indium Antimony Tellurium (IST), Silver Indium Antimony Tellurium (AIST), Cadmium Telluride (CdTe), Cadmium Selenide (CdSe), Zinc Telluride (ZnTe), Zinc Selenide (ZnSe), Copper indium gallium selenide (CIGS) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices. | 08-30-2012 |
20130078392 | HALOGENATED ORGANOAMINOSILANE PRECURSORS AND METHODS FOR DEPOSITING FILMS COMPRISING SAME - Described herein are precursors and methods of forming films. In one aspect, there is provided a precursor having Formula I: | 03-28-2013 |
20130129603 | Tellurium (Te) Precursors for Making Phase Change Memory Materials - Tellurium (Te)-containing precursors, Te containing chalcogenide phase change materials are disclosed in the specification. A method of making Te containing chalcogenide phase change materials using ALD, CVD or cyclic CVD process is also disclosed in the specification in which at least one of the disclosed tellurium (Te)-containing precursors is introduced to the process. | 05-23-2013 |
20130129940 | ORGANOAMINOSILANE PRECURSORS AND METHODS FOR MAKING AND USING SAME - Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film. | 05-23-2013 |
20130180215 | CATALYST AND FORMULATIONS COMPRISING SAME FOR ALKOXYSILANES HYDROLYSIS REACTION IN SEMICONDUCTOR PROCESS - A stable formulation comprising a silicon containing precursor selected from an alkoxysilane, aryloxysilane, or alkylalkoxysilane and a catalyst compound comprising a haloalkoxyalkylsilane or haloaryloxyalkylsilane wherein the substitutents within the silicon-containing precursor and catalyst compound are the same are described herein. More specifically, the formulation comprises a silicon-containing precursor comprising an alkoxyalkylsilane or aryloxysilane having a formula of Si(OR | 07-18-2013 |
20130189853 | Low Temperature Deposition of Silicon-Containing Films - This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition. | 07-25-2013 |
20130196082 | ALKOXYAMINOSILANE COMPOUNDS AND APPLICATIONS THEREOF - Alkoxyaminosilane compounds having formula I, and processes and compositions for depositing a silicon-containing film, are described herein: | 08-01-2013 |
20130210217 | Precursors for GST Films in ALD/CVD Processes - The present invention is a process of making a germanium-antimony-tellurium alloy (GST) or germanium-bismuth-tellurium (GBT) film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silylantimony precursor is used as a source of antimony for the alloy film. The invention is also related to making antimony alloy with other elements using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silylantimony or silylbismuth precursor is used as a source of antimony or bismuth. | 08-15-2013 |
20130243968 | CATALYST SYNTHESIS FOR ORGANOSILANE SOL-GEL REACTIONS - A formulation comprising a first organosilane precursor and a halogenation reagent wherein at least a portion or all of the halogenation reagent reacts to provide the second organosilane precursor. Methods of generating such formulation in situ from readily available pure materials are also provided. Further provided are methods of using the formulations as the precursor for a flowable vapor deposition process. | 09-19-2013 |
20130244448 | Precursors for CVD Silicon Carbo-Nitride Films - Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula Si | 09-19-2013 |
20130295779 | HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON OXIDE THIN FILMS - Composition(s) and atomic layer deposition (ALD) process(es) for the formation of a silicon oxide containing film at one or more deposition temperature of about 500° C. is disclosed. In one aspect, the composition and process use one or more silicon precursors selected from compounds having the following formulae I, II, described and combinations thereof | 11-07-2013 |
20130319290 | ORGANOAMINODISILANE PRECURSORS AND METHODS FOR DEPOSITING FILMS COMPRISING SAME - Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is a precursor of following Formula I: | 12-05-2013 |
20130323435 | ORGANOAMINODISILANE PRECURSORS AND METHODS FOR DEPOSITING FILMS COMPRISING SAME - Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: | 12-05-2013 |
20130330937 | Process for Producing Silicon and Oxide Films from Organoaminosilane Precursors - A method for depositing a silicon containing film on a substrate using an organoaminosilane is described herein. The organoaminosilanes are represented by the formulas: | 12-12-2013 |
20140024173 | Method of Making a Multicomponent Film - Described herein is a method and liquid-based precursor composition for depositing a multicomponent film. In one embodiment, the method and compositions described herein are used to deposit Germanium Tellurium (GeTe), Antimony Tellurium (SbTe), Antimony Germanium (SbGe), Germanium Antimony Tellurium (GST), Indium Antimony Tellurium (IST), Silver Indium Antimony Tellurium (AIST), Cadmium Telluride (CdTe), Cadmium Selenide (CdSe), Zinc Telluride (ZnTe), Zinc Selenide (ZnSe), Copper indium gallium selenide (CIGS) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices. | 01-23-2014 |
20140030448 | NON-OXYGEN CONTAINING SILICON-BASED FILMS AND METHODS OF FORMING THE SAME - Disclosed herein are non-oxygen containing silicon-based films, and methods for forming the same. The non-oxygen silicon-based films contain >50 atomic % of silicon. In one aspect, the silicon-based films have a composition SixCyNz wherein x is about 51 to 100, y is 0 to 49, and z is 0 to 50 atomic weight (wt.) percent (%) as measured by XPS. In one embodiment, the non-oxygen silicon-based films were deposited using at least one organosilicon precursor having at least two SiH | 01-30-2014 |
20140065844 | Amino Vinylsilane Precursors for Stressed SiN Films - The present invention is a method to increase the intrinsic compressive stress in plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) and silicon carbonitride (SiCN) thin films, comprising depositing the film from an amino vinylsilane-based precursor. More specifically the present invention uses the amino vinylsilane-based precursor selected from the formula: [RR | 03-06-2014 |
20140158580 | ALKOXYSILYLAMINE COMPOUNDS AND APPLICATIONS THEREOF - Described herein are alkoxysilylamine precursors having the following Formulae A and B: | 06-12-2014 |
20140183706 | Dielectric Films Comprising Silicon And Methods For Making Same - Described herein are methods of forming dielectric films comprising silicon, such as, but not limited to, silicon oxide, silicon oxycarbide, silicon carbide, and combinations thereof, that exhibit at least one of the following characteristics: low wet etch resistance, a dielectric constant of 6.0 or below, and/or can withstand a high temperature rapid thermal anneal process. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer. | 07-03-2014 |
20140272194 | ORGANOAMINOSILANE PRECURSORS AND METHODS FOR MAKING AND USING SAME - Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film. | 09-18-2014 |
20140287164 | COMPOSITIONS AND PROCESSES FOR DEPOSITING CARBON-DOPED SILICON-CONTAINING FILMS - Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of R | 09-25-2014 |
20140308802 | METHOD OF MAKING A MULTICOMPONENT FILM - Described herein is a method and precursor composition for depositing a multicomponent film. In one embodiment, the method and composition described herein is used to deposit a germanium-containing film such as Germanium Tellurium, Antimony Germanium, and Germanium Antimony Tellurium (GST) films via an atomic layer deposition (ALD) and/or other germanium, tellurium and selenium based metal compounds for phase change memory and photovoltaic devices. In this or other embodiments, the Ge precursor used comprises trichlorogermane. | 10-16-2014 |
20150021599 | BARRIER MATERIALS FOR DISPLAY DEVICES - Described herein are apparatus comprising one or more silicon-containing layers and a metal oxide layer. Also described herein are methods for forming one or more silicon-containing layers to be used, for example, as passivation layers in a display device. In one particular aspect, the apparatus comprises a transparent metal oxide layer, a silicon oxide layer and a silicon nitride layer. In this or other aspects, the apparatus is deposited at a temperature of 350° C. or below. The silicon-containing layers described herein comprise one or more of the following properties: a density of about 1.9 g/cm | 01-22-2015 |
20150024608 | Organoaminodisilane Precursors and Methods for Depositing Films Comprising Same - Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: | 01-22-2015 |
20150087139 | ORGANOAMINOSILANE PRECURSORS AND METHODS FOR DEPOSITING FILMS COMPRISING SAME - Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: | 03-26-2015 |