| Patent application number | Description | Published |
|---|
| 20080207007 | Plasma Enhanced Cyclic Chemical Vapor Deposition of Silicon-Containing Films - The present invention is a process of plasma enhanced cyclic chemical vapor deposition of silicon nitride, silicon carbonitride, silicon oxynitride, silicon carboxynitride, and carbon doped silicon oxide from alkylaminosilanes having Si—H | 08-28-2008 |
| 20080271640 | Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants - A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula Si | 11-06-2008 |
| 20090069588 | Precursors for CVD Silicon Carbo-nitride Films - Classes of liquid aminosilanes have been found which allow for the production of silicon-containing films. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films. | 03-12-2009 |
| 20090137100 | Tellurium Precursors for GST Films in an ALD or CVD Process - The present invention is a process of making a germanium-antimony-tellurium alloy film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silyltellurium precursor is used as a source of tellurium for the alloy film and is reacted with an alcohol during the deposition process. | 05-28-2009 |
| 20090142881 | Tellurium (Te) Precursors for Making Phase Change Memory Materials - Tellurium (Te)-containing precursors, Te containing chalcogenide phase change materials are disclosed in the specification. A method of making Te containing chalcogenide phase change materials using ALD, CVD or cyclic CVD process is also disclosed in the specification in which at least one of the disclosed tellurium (Te)-containing precursors is introduced to the process. | 06-04-2009 |
| 20090191330 | Antimony Precursors for GST Films in ALD/CVD Processes - The present invention is a process of making a germanium-antimony-tellurium alloy film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silylantimony precursor is used as a source of antimony for the alloy film. Novel silylantimony compounds are also disclosed. | 07-30-2009 |
| 20090280052 | Binary and Ternary Metal Chalcogenide Materials and Method of Making and Using Same - This invention discloses the synthesis of metal chalcogenides using chemical vapor deposition (CVD) process, atomic layer deposition (ALD) process, or wet solution process. Ligand exchange reactions of organosilyltellurium or organosilylselenium with a series of metal compounds having neucleophilic substituents generate metal chalcogenides. This chemistry is used to deposit germanium-antimony-tellurium (GeSbTe) and germanium-antimony-selenium (GeSbSe) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices. | 11-12-2009 |
| 20100009546 | Aminosilanes for Shallow Trench Isolation Films - The present invention is a process for spin-on deposition of a silicon dioxide-containing film under oxidative conditions for gap-filling in high aspect ratio features for shallow trench isolation used in memory and logic circuit-containing semiconductor substrates, such as silicon wafers having one or more integrated circuit structures contained thereon, comprising the steps of:
| 01-14-2010 |
| 20100041243 | Precursors for Depositing Silicon-containing Films and Methods for Making and Using Same - Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containing film comprising the following formula (I): | 02-18-2010 |
| 20100120262 | Amino Vinylsilane Precursors for Stressed SiN Films - The present invention is a method to increase the intrinsic compressive stress in plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) and silicon carbonitride (SiCN) thin films, comprising depositing the film from an amino vinylsilane-based precursor. More specifically the present invention uses the amino vinylsilane-based precursor selected from the formula: [RR | 05-13-2010 |
| 20100233886 | Dielectric Films Comprising Silicon And Methods For Making Same - Described herein are methods of forming dielectric films comprising silicon, such as, but not limited to, silicon oxide, silicon oxycarbide, silicon carbide, and combinations thereof, that exhibit at least one of the following characteristics: low wet etch resistance, a dielectric constant of 6.0 or below, and/or can withstand a high temperature rapid thermal anneal process. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer. | 09-16-2010 |
| 20100291321 | Dielectric Barrier Deposition Using Nitrogen Containing Precursor - A process for forming a silicon carbonitride barrier dielectric film between a dielectric film and a metal interconnect of an integrated circuit substrate, comprising the steps of;
| 11-18-2010 |
| 20100304047 | Low Temperature Deposition of Silicon-Containing Films - This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition. | 12-02-2010 |
| 20110143032 | Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films With Low Dielectric Constants - A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula Si | 06-16-2011 |
| 20110165346 | Precursors for CVD Silicon Carbo-Nitride Films - Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula Si | 07-07-2011 |
