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Manabu Takei

Manabu Takei, Nagano JP

Patent application numberDescriptionPublished
20100264455SEMICONDUCTOR DEVICE - On the top surface of a thin semiconductor wafer, top surface structures forming a semiconductor chip are formed. The top surface of the wafer is affixed to a supporting substrate with a double-sided adhesive tape. Then, from the bottom surface of the thin semiconductor wafer, a trench, which becomes a scribing line, is formed by wet anisotropic etching so that side walls of the trench are exposed. On the side walls of the trench with the crystal face exposed, an isolation layer with a conductivity type different from that of the semiconductor wafer for holding a reverse breakdown voltage is formed simultaneously with a collector region of the bottom surface diffused layer by ion implantation, followed by annealing with laser irradiation. The side walls form a substantially V-shaped or trapezoidal-shaped cross section, with an angle of the side wall relative to the supporting substrate being 30-70°. The double-sided adhesive tape is then removed from the top surface to produce semiconductor chips. With such a manufacturing method, a reverse-blocking semiconductor device having high reliability can be formed.10-21-2010
20110081752SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A thin semiconductor wafer, on which a top surface structure and a bottom surface structure that form a semiconductor chip are formed, is affixed to a supporting substrate by a double-sided adhesive tape. Then, on the thin semiconductor wafer, a trench to become a scribing line is formed by wet anisotropic etching with a crystal face exposed so as to form a side wall of the trench. On the side wall of the trench with the crystal face thus exposed, an isolation layer for holding a reverse breakdown voltage is formed by ion implantation and low temperature annealing or laser annealing so as to be extended to the top surface side while being in contact with a p collector region as a bottom surface diffused layer. Then, laser dicing is carried out to neatly dice a collector electrode, formed on the p collector region, together with the p collector region, without presenting any excessive portions and any insufficient portions under the isolation layer. Thereafter, the double-sided adhesive tape is removed from the collector electrode to produce semiconductor chips. A highly reliable reverse-blocking semiconductor device can thus be formed at a low cost.04-07-2011

Patent applications by Manabu Takei, Nagano JP

Manabu Takei, Sagamihara-Shi JP

Patent application numberDescriptionPublished
20080290805DISPLAY DEVICE AND ITS DRIVING METHOD - A display panel (11-27-2008
20100079420PIXEL DRIVE DEVICE, LUMINESCENCE DEVICE, AND METHOD OF CONNECTING CONNECTION UNIT IN PIXEL DRIVE DEVICE - A pixel drive device that drives a pixel array including pixels connected to input/output terminals includes: a connection unit including connection terminals whose number is fewer than a number of the input/output terminals; and a connection switching unit that switches connection between the connection terminals and the input/output terminals. The input/output terminals of the pixel array are divided into a plurality of blocks each including a predetermined number of input/output terminals that is equal to/smaller than the number of connection terminals. The connection switching unit sequentially connects the connection terminals and the input/output terminals of each of the blocks, and sets the connection order of connecting the input/output terminals of each block to the connection terminals, such that adjoining two of the input/output terminals belonging to adjoining two of the blocks are connected to the same one of the connection terminals.04-01-2010
20100079423DISPLAY DRIVING APPARATUS, DISPLAY APPARATUS AND DRIVE CONTROL METHOD FOR DISPLAY APPARATUS - A data acquisition circuit sets one of the potential value at one end of a signal line and the value of a current flown thereto when one end of a current path of a drive device is connected to a light emitting device with the other end thereof set to a potential value where no current flows to the light emitting device. Then the circuit causes current to flow via the current path and the signal line and acquires one of the value of the current flown to the signal line and the potential value at the one end of the signal line according to the set value. A correction operation circuit acquires a threshold voltage and a current amplification factor of the drive device based on one of the current and potential values thus acquired as well as on one of the potential and current values thus set.04-01-2010
20100134469LIGHT EMITTING DEVICE AND A DRIVE CONTROL METHOD FOR DRIVING A LIGHT EMITTING DEVICE - A light emitting device has a plurality of pixels, each of which includes a drive transistor, a light emitting element and signal lines, a property parameter acquisition circuit which acquires property parameter, a signal correction circuit that generates a corrected gradation signal by correcting the image data based on the property parameter, and a drive signal impressing circuit that impresses a drive signal, generated based on the corrected gradation signal, on the pixel to drive it. The property parameter is constituted of a threshold voltage, a current amplification factor and its irregularity of the drive transistor, and is acquired based on measured voltages of the signal lines after each of a plurality of predetermined settling times elapses from the time when the light emitting device cuts off a voltage subsequent to impressing the voltage on each pixel for a predetermined length of time.06-03-2010
20100245308DISPLAY APPARATUS, DRIVE CONTROL METHOD OF DISPLAY APPARATUS AND MANUFACTURING METHOD OF DISPLAY APPARATUS - Disclosed is a display apparatus including a plurality of display pixels formed of a plurality of first electrodes provided in one surface side of a substrate, a second electrode which faces each of the first electrodes and display functional layers which are provided between each of the first electrodes and the second electrode and a resistive film having a predetermined resistivity in which one surface side is provided so as to face the other surface side of the second electrode having a predetermined space above the upper surface of a partition wall layer to define a forming region for each of the display pixels and which is disposed so as to be conductive to the other surface side of the second electrode by a pressure applied from outside, and the second electrode constructing the display pixels is double used as an electrode for detecting a position where the pressure is applied.09-30-2010
20100245343PIXEL DRIVING DEVICE, LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE DRIVING CONTROL METHOD - A pixel includes a light emitting element and a driving element connected to the light emitting element. After an initial voltage is applied to one end of a current path of the driving element via the signal line, the pixel driving device acquires the threshold voltage of the driving element based on a voltage value at a terminal of the signal line when the initial voltage is cut off and the relaxation time is elapsed. The voltage-current characteristics of the driving element is acquired based on the voltage value at the terminal of the signal line when the current flows into the current path of the driving element via the signal line. The current gain value of the driving element is acquired based on the threshold voltage of the driving element. The image data is corrected based on the acquired threshold voltage.09-30-2010
20110115761DISPLAY DEVICE AND ASSOCIATED DRIVE CONTROL METHOD - A display device includes a display panel having a plurality of signal lines and scanning lines with a plurality of display pixels containing current control type light emitting devices; a scan driver circuit which applies a scanning signal to each of the scanning lines and sets the display pixels connected to the scanning lines in a selective state; a signal driver circuit which generates gradation current based on a display data luminosity gradation component and supplies to the display pixels set in the selective state; a precharge circuit which applies a precharge voltage to each signal line and sets a capacity component attached to each of the scanning lines in a predetermined charged state; and an operation control circuit which controls setting of the light emitting devices in a non-light emitting state when the capacity component is set in a predetermined charged state.05-19-2011

Patent applications by Manabu Takei, Sagamihara-Shi JP

Manabu Takei, Shiojiri City JP

Patent application numberDescriptionPublished
20090206398SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE - A semiconductor device including an n-type semiconductor substrate, a p-type channel region and a junction layer provided between the n-type semiconductor substrate and the p-type channel region is disclosed. The junction layer has n-type drift regions and p-type partition regions alternately arranged in the direction in parallel with the principal surface of the n-type semiconductor substrate. The p-type partition region forming the junction layer is made to have a higher impurity concentration than the n-type drift region. This enables the semiconductor device to have an enhanced breakdown voltage and, at the same time, have a reduced on-resistance.08-20-2009
20090317959METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A manufacturing method for manufacturing a super-junction semiconductor device forms an oxide film and a nitride film on an n-type epitaxial layer exhibiting high resistance on an n-type semiconductor substrate exhibiting low resistance. The portion of the nitride film in the scribe region is left unremoved by patterning and an alignment marker is opened through the nitride film. After opening a trench pattern in the oxide film, trenches having a high aspect ratio are formed. The portion of the oxide film outside the scribe region is removed and a p-type epitaxial layer is buried in the trenches. The overgrown p-type epitaxial layer is polished with reference to the nitride film, the polished surface is finished by etching, and the n-type epitaxial layer surface is exposed.12-24-2009
20100140657POWER SEMICONDUCTOR DEVICE AND THE METHOD OF MANUFACTURING THE SAME - A semiconductor device according to the invention includes n-type semiconductor substrate 06-10-2010

Patent applications by Manabu Takei, Shiojiri City JP

Manabu Takei, Tokyo JP

Patent application numberDescriptionPublished
20100134468PIXEL DRIVING DEVICE, LIGHT EMITTING DEVICE, AND PROPERTY PARAMETER ACQUISITION METHOD IN A PIXEL DRIVING DEVICE - A pixel driving device in which, after a reference voltage exceeds a threshold voltage of a drive transistor is impressed through the signal lines on each pixel equipping a light emitting element and the drive transistor, set the signal lines in a state of high impedance, and acquires a voltage value of one end of the signal lines subsequent to a predetermined settling time elapsing, and acquires the threshold voltage of the drive transistor for each pixel and the current amplification factor of the pixel drive circuit as a first property parameter based on acquired voltage values at the time a plurality of first settling times longer than a predetermined value and acquires an irregularity parameter indicating the irregularity in the current amplification factor based on the value of the first property parameter and the measured voltage value acquired at the time shorter than the predetermined value.06-03-2010
20100134475PIXEL DRIVING DEVICE, LIGHT EMITTING DEVICE, AND PROPERTY PARAMETER ACQUISITION METHOD IN A PIXEL DRIVING DEVICE - A pixel driving device has a voltage impressing circuit that outputs a reference voltage that exceeds a threshold voltage of a drive transistor, a voltage measurement circuit, and a property parameter acquisition circuit that acquires a property parameter related to an electronic property of a pixel. The pixel driving device impresses the reference voltage on the pixel that has a light emitting element and the drive transistor. The voltage measurement circuit acquires voltage of a signal line, as measured voltages, after each of a plurality of the settling times elapsing from the time when the reference voltage is cut. The property parameter acquisition circuit acquires, as property parameters, the threshold voltage and a current amplification factor of drive transistor based on values of a plurality of measured voltages acquired by the voltage measurement circuit.06-03-2010
20100134482 PIXEL DRIVING DEVICE AND A LIGHT EMITTING DEVICE - A pixel driving device for drive control of pixels, has a image data conversion circuit for generating an original gradation signal by converting an image data, based on a preset conversion property, a signal correction circuit for outputting a corrected gradation signal by adding a correction value acquired based on an electric property parameter of a pixel to the original gradation signal, and a drive signal impressing circuit for impressing a voltage signal corresponding to the corrected gradation signal on one end of a signal line. The original gradation signal has a value that corresponds to a gradation value of the image data and the maximum value of the original gradation signal is set to a value equal to or smaller than a value acquired by subtracting a value corresponding to the correction value from a maximum value in an input range of the drive signal impressing circuit.06-03-2010

Manabu Takei, Matsumoto JP

Patent application numberDescriptionPublished
20100093164SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - On the top surface of a thin semiconductor wafer, top surface structures forming a semiconductor chip are formed. The top surface of the wafer is affixed to a supporting substrate with a double-sided adhesive tape. Then, from the bottom surface of the thin semiconductor wafer, a trench, which becomes a scribing line, is formed by wet anisotropic etching so that side walls of the trench are exposed. On the side walls of the trench with the crystal face exposed, an isolation layer with a conductivity type different from that of the semiconductor wafer for holding a reverse breakdown voltage is formed simultaneously with a collector region of the bottom surface diffused layer by ion implantation, followed by annealing with laser irradiation. The side walls form a substantially V-shaped or trapezoidal-shaped cross section, with an angle of the side wall relative to the supporting substrate being 30-70°. The double-sided adhesive tape is then removed from the top surface to produce semiconductor chips. With such a manufacturing method, a reverse-blocking semiconductor device having high reliability can be formed.04-15-2010