| Patent application number | Description | Published |
|---|
| 20080237600 | Thin film transistor - One embodiment of the present invention is a thin film transistor, including: an insulating substrate; a gate electrode, a gate insulating layer and a semiconductor layer including an oxide, these three elements being formed over the insulating substrate in this order, and the gate insulating layer including: a lower gate insulating layer, the lower gate insulating layer being in contact with the insulating substrate and being an oxide including any one of the elements In, Zn or Ga; and an upper gate insulating layer provided on the lower gate insulating layer, the upper gate insulating layer comprising at least one layer; and a source electrode and a drain electrode formed on the semiconductor layer. | 10-02-2008 |
| 20080258139 | Structure with transistor - A structure with a transistor is disclosed comprising a substrate, a gas barrier layer on the substrate, and a transistor on the gas barrier layer. The transistor can include an oxide semiconductor layer. The oxide semiconductor layers can comprise In—Ga—Zn—O. A display, such as a liquid crystal display, can have such a structure. | 10-23-2008 |
| 20080284933 | Image Display Device - One embodiment of the present invention is an image display device including a substantially transparent substrate, a color filter layer formed on the substantially transparent substrate and a substantially transparent semiconductor circuit formed on the color filter layer. The circuit includes a substantially transparent thin film transistor including a source electrode, a drain electrode, a gate insulating film, a gate electrode and a semiconductor active layer comprised of a metal oxide. The semiconductor active layer has a thickness of 10 nm-35 nm. The circuit also includes a wiring made of a substantially transparent conductive material, the wiring having a electric contact point with the substantially transparent thin film transistor. | 11-20-2008 |
| 20090121225 | Thin film transistor, method for manufacturing the same and display using the same - One embodiment of the present invention is a thin film transistor including a gate electrode formed on an insulating substrate, a gate insulator formed on the gate electrode, a drain electrode and a source electrode formed on the gate insulator, an oxide semiconductor pattern formed between the drain electrode and the source electrode, and a sealing layer formed on the oxide semiconductor pattern. | 05-14-2009 |
| 20090213039 | Display device - One embodiment of the present invention is a display device being visible from both sides, including a substantially transparent semiconductor circuit having a substantially transparent thin film transistor on one surface of a substantially transparent substrate and a wiring made of a substantially transparent conductive material, the wiring having an electric contact point electrically connected to the transistor, and a display element being driven by the semiconductor circuit. | 08-27-2009 |
| 20090294808 | Thin Film Transistor, Method for Manufacturing the Same and Film Formation Apparatus - One embodiment of the present invention is a method for manufacturing a bottom gate type thin film transistor having a gate electrode, a gate insulating film, an oxide semiconductor active layer, a source electrode and a drain electrode on a flexible plastic substrate of a supporting substrate, the method including continuously forming the gate insulating film and the oxide semiconductor active layer on the flexible plastic substrate with the gate electrode inside a vacuum film formation chamber of a film formation apparatus, the apparatus being a type of winding up continuously the roll-shaped substrate, and the gate insulating film and the oxide semiconductor active layer formed without being exposed to air. | 12-03-2009 |
| 20090297592 | Lipid Vesicle Composition - It is an object of the present invention to provide an enzyme preparation which is excellent in stability in blood (blood residence) and in transfer to a target organ (targeting property), and can be used effectively in enzyme replacement therapy or the like. | 12-03-2009 |
| 20100209458 | AMPHIPHILIC MOLECULE, MOLECULAR ASSEMBLY COMPRISING THE AMPHIPHILIC MOLECULE, AND USE OF THE MOLECULAR ASSEMBLY - The present invention provides an amphiphilic molecule having a plurality of zwitterionic functional groups in its hydrophilic moiety and a molecular assembly comprising the amphiphilic molecule as a constituent lipid. According to a preferred embodiment of the present invention, the molecular assembly of the present invention forms a stable vesicular structure under a physiological pH environment to carry a substance of interest in the vesicular structure, and can release the substance of interest to the outside of the vesicular structure when it is deformed under an acidic pH environment. The molecular assembly of the present invention can be used as a carrier for a drug, a probe, a nucleic acid, a protein or the like. | 08-19-2010 |
| 20100258805 | Thin Film Transistor and Image Display Unit - One embodiment of the present invention is a thin film transistor having a substrate, a gate electrode formed on the substrate, a gate insulating film, a semiconductor layer formed on the gate insulating film, a protective film formed on the semiconductor layer and the gate insulating film and having first and second opening sections which are separately and directly formed on the semiconductor layer, a source electrode formed on the protective film and electrically connected to the semiconductor layer at the first opening section of the protective film, and a drain electrode formed on the protective film and electrically connected to the semiconductor layer at the second opening section of the protective film. | 10-14-2010 |
| 20100276692 | Thin Film Transistor, Method For Manufacturing The Same And Display Using The Same - One embodiment of the present invention is a thin film transistor having a gate electrode formed on an insulating substrate, a gate wire connected to the gate electrode, a capacitor electrode, a capacitor wire connected to the capacitor electrode, a gate insulator formed on the gate electrode, an oxide semiconductor pattern formed on the gate insulator, a sealing layer formed on the oxide semiconductor pattern, a drain electrode and a source electrode formed on the sealing layer, a drain wire connected to the drain electrode and a pixel electrode connected to the source electrode, the drain wire and the pixel electrode being in the same layer as the drain electrode and the source electrode. wherein the gate wire, the capacitor electrode and the capacitor wire are in the same layer as the gate electrode, and wherein the sealing layer does not cover a connection part of the source electrode and a connection part of the drain electrode and wherein the drain electrode and the source electrode are connected to the oxide semiconductor pattern via the connection part of the drain electrode and the connection part of the source electrode, | 11-04-2010 |
