| Patent application number | Description | Published |
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| 20090095423 | APPARATUS AND METHOD FOR PLASMA ETCHING - A plasma processing apparatus for performing plasma processing on an object to be processed, including: a processing chamber for performing plasma etching on an object to be processed; a first gas inlet provided at an upper portion of the processing chamber for supplying gas to a center portion in the processing chamber; a plurality of second gas inlets placed on an outer circumference of the first gas inlet for supplying gas to an outer circumference portion in the processing chamber; two lines of gas supply systems for supplying processing gases to the first gas inlet and the second gas inlets, respectively; an evacuation means for reducing the pressure in the processing chamber; an electrode on which the object to be processed is placed disposed in the processing chamber opposed to the first gas inlet and the second gas inlets; a high frequency power supply for generating plasma; and additional gas supply systems provided to the two lines of gas supply systems, respectively, for adding a gas for generating a depositional reaction product as additional gas via gas flow rate regulators at a given flow rate ratio. | 04-16-2009 |
| 20090223633 | Apparatus And Method For Plasma Etching - A plasma etching apparatus capable of performing processing with excellent in-plane uniformity on an object to be processed having a large diameter is provided. The present invention provides a plasma etching apparatus including a processing chamber | 09-10-2009 |
| 20100078130 | Plasma Processing Apparatus - A plasma processing apparatus including a processing chamber for subjecting an object to plasma processing, a gas inlet, an evacuation device, a sample stage for the object, a power supply, and at least one induction coil. The at least one induction coil enables generation of the plasma in the processing chamber and is formed by connecting a plurality of identical coil elements in a parallel circuit-like arrangement so that current flows in each of the plurality of identical coil elements in a same direction when viewed from the sample stage. | 04-01-2010 |
| 20100263796 | Plasma Processing Apparatus - A plasma processing apparatus includes a processing chamber, a sample stage for mounting an object to be processed, a power supply, and at least one induction coil connected to the power supply. The induction coil is formed by connecting at least two identical coil elements in a parallel circuit-like arrangement so that current flows in each of the plurality of identical coil elements in a same direction when viewed from the sample stage. The induction coil is positioned so that a center thereof corresponds to a center of the object, and input ends of the coil elements are displaced circumferentially at equal angular intervals calculated by dividing 360° by the number of identical coil elements. | 10-21-2010 |
| Patent application number | Description | Published |
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| 20080223122 | SCANNING PROBE MICROSCOPE - A scanning probe microscope, capable of performing shape measurement not affected by electrostatic charge distribution of a sample, which: monitors an electrostatic charge state by detecting a change in a flexure or vibrating state of a cantilever due to electrostatic charges in synchronization with scanning during measurement with relative scanning between the probe and the sample, and makes potential adjustment so as to cancel an influence of electrostatic charge distribution, thus preventing damage of the probe or the sample due to discharge and achieving reduction in measurement errors due to electrostatic charge distribution. | 09-18-2008 |
| 20090158828 | Scanning Probe Microscope - In the case of measuring a pattern having a steep side wall, a probe adheres to the side wall by the van der Waals forces acting between the probe and the side wall when approaching the pattern side wall, and an error occurs in a measured profile of the side wall portion. When a pattern having a groove width almost equal to a probe diameter is measured, the probe adheres to both side walls, the probe cannot reach the groove bottom, and the groove depth cannot be measured. When the probe adheres to a pattern side wall in measurements of a microscopic high-aspect ratio pattern using an elongated probe, the probe is caused to reach the side wall bottom by detecting the adhesion of the probe to the pattern side wall, and temporarily increasing a contact force between the probe and the sample. Also, by obtaining the data of the amount of torsion of a cantilever with the shape data of the pattern, a profile error of the side wall portion by the adhesion is corrected by the obtained data of the amount of torsion. | 06-25-2009 |
