Patent application number | Description | Published |
20080203394 | Method for fabrication of active-matrix display panels - The present invention provides a method of an active-matrix thin film transistor array, comprising of two levels of metallic interconnections formed from one layer of metallic conductor; and thin-film transistors with source, drain and gate electrodes either fully or partially replaced with metal, and wherein the pixel electrodes are polycrystalline silicon. | 08-28-2008 |
20080204620 | Transflective Liquid Crystal Device and Method of Manufacturing the Same - The construction of electrodes for liquid-crystal displays using larger grain lower absorption (LGLA) poly-Si showing an absorptivity below 20% in the visible light region is described. Integration in the manufacturing of substrates for active-matrix LCDs is shown. Source, drain and channel region ( | 08-28-2008 |
20090065050 | Method and structure for textured thermal cut for photovoltaic applications for thin films - A photovoltaic device and related methods of manufacture. The device has a support substrate having a support surface region. The device has a thickness of crystalline material overlying the support surface region of the support substrate. Preferably, the thickness of material has an upper surface region. The device has a glue layer provided between the support surface region and the thickness of material according to a specific embodiment. In a preferred embodiment, the device has a textured surface region formed overlying from the upper surface region of the thickness of crystalline material. Depending upon the embodiment, the device has a plurality of elevated regions having a first thickness defining a first portion of the textured surface region and a plurality of recessed regions having a second thickness defining a second portion of the textured surface region. | 03-12-2009 |
20090134790 | POLYCRYSTALLINE SILICON AS AN ELECTRODE FOR A LIGHT EMITTING DIODE & METHOD OF MAKING THE SAME - Metal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be formed onto the polycrystallized silicon anode, with the silicon anode acting as the drain of the thin film transistor, thereby simplifying production. | 05-28-2009 |
20100071760 | ULTRATHIN FILM MULTI-CRYSTALLINE PHOTOVOLTAIC DEVICE - A solar cell photovoltaic device using ultrathin films of polycrystalline silicon and deep uneven surface structures is disclosed. According to one embodiment, the uneven structures include one or more pits having a depth of at least 10 microns. According to another embodiment, the uneven structures include one or more cones or columns having a height or at least 10 microns. Because the unevenness of the structures, the photovoltaic device is able to use a very thin layer of polycrystalline silicon to effectively trap and absorb light. | 03-25-2010 |
20100171546 | Polycrystalline silicon thin film transistors with bridged-grain structures - A low temperature polycrystalline silicon device and techniques to manufacture thereof with excellent performance. Employing doped poly-Si lines which we called a bridged-grain structure (BG), the intrinsic or lightly doped channel is separated into multiple regions. A single gate covering the entire active channel including the doped lines is still used to control the current flow. Using this BG poly-Si as an active layer and making sure the TFT is designed so that the current flows perpendicularly to the parallel lines of grains, grain boundary effects can be reduced. Reliability, uniformity and the electrical performance of the BG poly-Si TFT are significantly improved compared with the conventional low temperature poly-Si TFT. | 07-08-2010 |
20110159610 | Polycrystalline silicon as an electrode for a light emitting diode and method of making the same - Metal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be formed onto the polycrystallized silicon anode, with the silicon anode acting as the drain of the thin film transistor, thereby simplifying production. | 06-30-2011 |
20130037798 | Metal-Oxide Based Thin-Film Transistors with Fluorinated Active Layer - A thin-film transistor with a fluorinated channel and fluorinated source and drain regions and methods of fabrication are provided. The thin-film transistor includes: a substrate; a semiconductor active layer of fluorine-doped metal-oxide formed on the substrate; fluorine-doped source and drain regions disposed adjacent to the semiconductor active layer; a gate electrode disposed over the semiconductor active layer, configured to induce a continuous conduction channel between the source and drain regions; and a gate dielectric material separating the gate electrode and the channel. | 02-14-2013 |
20140159039 | THIN FILM TRANSISTOR WITH TWO-DIMENSIONAL DOPING ARRAY - A thin film transistor includes: a source region; a drain region; and a polycrystalline thin film active channel region connected to the source region and the drain region, the active channel region comprising grains and being doped with a two-dimensional pattern comprising a plurality of doped regions, the plurality of doped regions each comprising at least portions of a plurality of the grains and at least one grain boundary. | 06-12-2014 |