Patent application number | Description | Published |
20080212631 | RED SURFACE EMITTING LASER ELEMENT, IMAGE FORMING DEVICE, AND IMAGE DISPLAY APPARATUS - A red surface emitting laser element includes a first reflector, a second reflector including a p-type semiconductor multilayer film, an active layer between the first reflector and the second reflector, and a p-type semiconductor spacer layer between the active layer and the second reflector, the p-type semiconductor spacer layer having a thickness of 100 nm or more and 350 nm or less. | 09-04-2008 |
20080298419 | VERTICAL CAVITY SURFACE EMITTING LASER DEVICE - A vertical cavity surface emitting laser device includes a first reflective mirror layer, a second reflective mirror layer, and an active layer disposed therebetween, wherein at least one of the first reflective mirror layer and the second reflective mirror layer includes a periodic-refractive-index structure in which the refractive index periodically changes in the in-plane direction and a part of the periodic-refractive-index structure includes a plurality of parts that disorder the periodicity. | 12-04-2008 |
20090252532 | RED SURFACE EMITTING LASER ELEMENT, IMAGE FORMING DEVICE, AND IMAGE DISPLAY APPARATUS - A red surface emitting laser element includes a first reflector, a second reflector including a p-type semiconductor multilayer film, an active layer between the first reflector and the second reflector, and a p-type semiconductor spacer layer between the active layer and the second reflector, the p-type semiconductor spacer layer having a thickness of 100 nm or more and 350 nm or less. | 10-08-2009 |
20100322669 | RED SURFACE EMITTING LASER ELEMENT, IMAGE FORMING DEVICE, AND IMAGE DISPLAY APPARATUS - A red surface emitting laser element includes a first reflector, a second reflector including a p-type semiconductor multilayer film, an active layer between the first reflector and the second reflector, and a p-type semiconductor spacer layer between the active layer and the second reflector, the p-type semiconductor spacer layer having a thickness of 100 nm or more and 350 nm or less. | 12-23-2010 |
20120327422 | SEMICONDUCTOR OPTICAL INTEGRATED DEVICE AND OPTICAL COHERENCE TOMOGRAPHIC IMAGING APPARATUS PROVIDED WITH THE SEMICONDUCTOR OPTICAL INTEGRATED DEVICE - Provided is a semiconductor optical integrated device, formed by arranging a light emitting element and a light detecting element in a plane of the same substrate, each formed by laminating layers which at least include a first clad layer of a first conductive type, an active layer and a second clad layer of a second conductive type on a substrate, wherein the active layer has a structure where a second active area of a conductive type and an undoped first active area are laminated, and the second active area has the same conductive type as that of the first or second clad layer laminated in the closest position to the second active area. This device suppresses heat generation due to increased operating current and unnecessary light generation at an operation of the light emitting element, and enhancing light absorption efficiency at the an operation of the light emitting element. | 12-27-2012 |
20130116553 | BIOLOGICAL MEASURING APPARATUS AND BIOLOGICAL MEASURING METHOD - A biological measuring apparatus measures physical parameters in a part of a living body by diffuse optical tomography. The apparatus includes at least one first light source and one first detector both disposed inside the living body, at least one second light source and one second detector both disposed outside the living body. A processor processes measured values and reconstructs the distribution of scattering coefficients or absorption coefficients of light interacting with the living body. The measured values are acquired from at least one measurement light beam emitted from the first light source and detected by one of the first and second detectors, and at least one measurement light beam emitted from the second light source and detected by one of the first and second detectors. | 05-09-2013 |
20140055790 | VARIABLE WAVELENGTH SURFACE EMITTING LASER - A surface emitting laser includes a first laser, and a second laser, wherein each of the first laser and the second laser includes a light resonant cavity including a pair of reflecting mirrors, and a semiconductor layer configured to emit light and arranged inside the light resonant cavity, an oscillation wavelength of light varied by displacing a location of the reflecting mirror in a thickness direction of the semiconductor layer, the semiconductor layer is shared by the first laser and the second laser, the first laser has a resonant cavity length for oscillating with (n+1)th order (n is an integer of 1 or more) of a longitudinal mode, the second laser has a resonant cavity length for oscillating with nth order of a longitudinal mode, and respective wavelength bands of light oscillated by the first laser the second laser are different. | 02-27-2014 |
20140168656 | LUMINESCENT DEVICE, OPTICAL COHERENCE TOMOGRAPHIC IMAGING APPARATUS PROVIDED WITH THE LUMINESCENT DEVICE AND CONTROL METHOD OF THE LUMINESCENT DEVICE - A luminescent device including an upper electrode layer, a lower electrode layer and an active layer provided between these electrode layers, the device having such a structure that at least one electrode layer of the upper electrode layer and the lower electrode layer is provided in an in-plane direction of the active layer being divided into plural electrodes, current is injected into plural different regions of the active layer by the plural electrodes to cause emission in plural luminescent regions, and light emitted from one luminescent region of the plural luminescent regions enters in another luminescent region and exits. The device further includes a light receiving portion for detecting light that is emitted from one luminescent region of the plural luminescent regions and does not go through another luminescent region. | 06-19-2014 |
20150029512 | SURFACE EMITTING LASER AND OPTICAL APPARATUS - A surface emitting laser comprises an upper reflecting mirror, a lower reflecting mirror, and an active layer located between those mirrors. A cavity of the surface emitting laser consists of the upper reflecting mirror and the lower reflecting mirror. In the surface emitting laser, a plurality of individual light receiving portions is located in an optical path inside the cavity in order to detect a laser beam. | 01-29-2015 |