Malta
Dan Malta, Modiin IL
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20130311011 | DYNAMIC LIMITATION OF MONOBLOCK FLIGHT CONTROL SURFACES INCLINATIONS DURING STALL SUSCEPTIBILITY CONDITIONS - Method for dynamically limiting the inclinations of monoblock flight control surfaces (FCS) in an aircraft. Dynamic limitation of the FCS is activated if a stall susceptibility condition is detected in the current aircraft environment. The real-time calibrated airspeed of the aircraft, real-time angle of attack (AOA) of the aircraft, and real-time sideslip angle (AOS) of the aircraft are obtained. The aircraft parameters may be obtained via estimation if the measured values are deemed unsuitable. The real-time local AOA and AOS of the FCS are calculated based on the obtained aircraft parameters. The inclination of each of the FCS relative to the critical values is dynamically limited according to the calculated real-time local AOA and AOS of the FCS. The aircraft may be an unmanned aerial vehicle (UAV) and/or a V-tail aircraft. The stall susceptibility condition may include icy conditions. | 11-21-2013 |
David Fernandes Braga Malta, Linda-A-Velha PT
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20130274124 | ADHESION SIGNATURES - The present invention provides arrays comprising polypeptides associated with extracellular matrix that can be used to isolate, differentiate, or culture certain cell types including stem cells, cancer cells, and/or primary hepatocytes. The array comprises at least a pair of polypeptides that comprise a polypeptide associated with extracellular matrix or functional fragments thereof. The invention also provides for methods of diagnosing and/or prognosing a certain disease or disorder through contacting a cell sample from a patient with an array comprising at least a pair of polypeptides that comprise a polypeptide sequence associated with extracellular matrix or functional fragments thereof. | 10-17-2013 |
David P. Malta, Raleigh, NC US
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20100320477 | PROCESS FOR PRODUCING SILICON CARBIDE CRYSTALS HAVING INCREASED MINORITY CARRIER LIFETIMES - A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration. | 12-23-2010 |
David Phillip Malta, Raleigh, NC US
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20090256162 | Method for Producing Semi-Insulating Resistivity in High Purity Silicon Carbide Crystals - A method is disclosed for producing high quality semi-insulating silicon carbide crystals in the absence of relevant amounts of deep level trapping elements. The invention includes the steps of heating a silicon carbide crystal having a first concentration of point defects to a temperature that thermodynamically increases the number of point defects and resulting states in the crystal, and then cooling the heated crystal at a sufficiently rapid rate to maintain an increased concentration of point defects in the cooled crystal. | 10-15-2009 |
20110024766 | ONE HUNDRED MILLIMETER SINGLE CRYSTAL SILICON CARBIDE WAFER - A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder. | 02-03-2011 |
Dean M. Malta, Cary, NC US
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20100270685 | DIE BONDING UTILIZING A PATTERNED ADHESION LAYER - An electronic package and method and system for forming the electronic package. The electronic package has a first substrate including a first electronic device and including through-holes extending through an entire thickness of the first substrate. The electronic package has a second substrate bonded to the first substrate, metallizations formed in the through-holes of the first substrate to connect to components of the first electronic device, and a patternable substance disposed between the first substrate and the second substrate and adhering the first substrate and the second substrate together in regions apart from the metallizations. The method and system form through-holes extending through an entire thickness of the first substrate, deposit and pattern an adherable substance on the second substrate in a pattern having openings which expose connections for a second electronic device of the second substrate, align and attach the first substrate and the second substrate together, and form metallizations in the through-holes to connect to the connections for the second electronic device. | 10-28-2010 |
Dean Michael Malta, Cary, NC US
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20110017703 | SELECTIVE PLANARIZATION METHOD AND DEVICES FABRICATED ON PLANARIZED STRUCTURES - A method and system for treating a surface structure of a workpiece. The method provides a carrier-gel to the surface structure of the workpiece. The carrier-gel includes an etchant for selectively etching a first material of the surface structure and has a gel particle size larger than the surface structure. The method etches the first material from the surface structure by a reaction of the etchant included in the carrier-gel with the first material of the surface structure in order to remove a part of the first material from the surface structure for subsequent device fabrication. The system includes a chemical reactor supporting the workpiece. The chemical reactor is configured to flow the carrier-gel noted to the surface structure of the workpiece in order to remove the first material from the surface structure. | 01-27-2011 |
20110298134 | THREE DIMENSIONAL INTERCONNECT STRUCTURE AND METHOD THEREOF - A three-dimensional interconnect includes a first substrate bonded to a second substrate, the first substrate including a device layer and a bulk semiconductor layer, a metal pad disposed on the second substrate, an electrically insulating layer disposed between the first and second substrates. The structure has a via-hole extending through the device layer, the bulk semi-conductor layer and the electrically insulating layer to the metal pad on the second substrate. The structure has a dielectric coating on a sidewall of the via-hole, and a plasma-treated region of the metal pad disposed on the second substrate. The structure includes a via metal monolithically extending from the plasma-treated region of the metal pad through the via-hole and electrically interconnecting the device layer of the first substrate to the metal pad of the second substrate. | 12-08-2011 |
Gerald P. Malta, Shelby Township, MI US
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20090151692 | METHOD AND APPARATUS FOR INJECTING FUEL INTO A COMPRESSION-IGNITION ENGINE - A method to manage and control engine operation includes injecting an initial mass of fuel into a combustion chamber to form a combustion charge, monitoring combustion and injecting a main mass of fuel into the combustion chamber substantially coincident with a start of combustion of the combustion charge. | 06-18-2009 |
Jacob H. Malta, New Britain, PA US
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20090241257 | SHOWER BACK SCRUBBER - A shower-mounted back-scrubber device is installed on the wall of a shower stall at a height approximating the height of the user's back. The device has a pair of scrub brushes that rotate and reciprocate vertically. The user stands comfortably with his or her back abutting the device. The brushes traverse and clean the entire surface of the user's back without awkward manual manipulation or translation relative to the device. The brushes are motor-driven by a drive shaft connecting the motor to a transmission. The transmission and drive shaft have a telescoping connection that permits positioning a housing of the device relative to the motor. A controller regulates rotational and reciprocal speed of the brushes. | 10-01-2009 |