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| 20090186471 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE FOR REDUCING THERMAL BURDEN ON IMPURITY REGIONS OF PERIPHERAL CIRCUIT REGION - A method of fabricating a semiconductor device for reducing a thermal burden on impurity regions of a peripheral circuit region includes preparing a substrate including a cell active region in a cell array region and peripheral active regions in a peripheral circuit region. A cell gate pattern and peripheral gate patterns may be formed on the cell active region and the peripheral active regions. First cell impurity regions may be formed in the cell active region. A first insulating layer and a sacrificial insulating layer may be formed to surround the cell gate pattern and the peripheral gate patterns. Cell conductive pads may be formed in the first insulating layer to electrically connect the first cell impurity regions. The sacrificial insulating layer may be removed adjacent to the peripheral gate patterns. First and second peripheral impurity regions may be sequentially formed in the peripheral active regions adjacent to the peripheral gate patterns. | 07-23-2009 |
| 20100140692 | METHODS OF FABRICATING SEMICONDUCTOR DEVICES HAVING MULTIPLE CHANNEL TRANSISTORS AND SEMICONDUCTOR DEVICES FABRICATED THEREBY - In methods of fabricating a semiconductor device having multiple channel transistors and semiconductor devices fabricated thereby, the semiconductor device includes an isolation region disposed within a semiconductor substrate and defining a first region. A plurality of semiconductor pillars self-aligned with the first region and spaced apart from each other are disposed within the first region, and each of the semiconductor pillars has at least one recessed region therein. At least one gate structure may be disposed across the recessed regions, which crosses the semiconductor pillars and extends onto the isolation region. | 06-10-2010 |
| 20100151655 | METHOD OF FORMING A FINE PATTERN OF A SEMICONUCTOR DEVICE USING A DOUBLE PATTERNING TECHNIQUE - A method of forming a fine pattern of a semiconductor device uses a double patterning technique. A first mask pattern is formed on a first hard mask layer disposed on a substrate. A conformal buffer layer is formed over the first mask pattern. A second mask pattern is formed such that segments of the buffer layer are interposed between the first and second mask patterns, and each topographical feature of the second mask pattern is disposed between two adjacent ones of each respective pair of topographical features of the first mask pattern. A first hard mask pattern is formed by etching the first hard mask layer using the first mask pattern, the second mask pattern, and/or the buffer layer as an etch mask. A trench is formed by etching the substrate using the first hard mask pattern as an etch mask. An isolation layer, of a material that is different from that of first hard mask pattern, is formed in the trench. | 06-17-2010 |
| 20100193880 | Semiconductor device and method of forming the same - A semiconductor device, and a method of forming the same, includes forming a cell bit line pattern and a peripheral gate pattern on a semiconductor substrate. The cell bit line pattern may be formed on an inactive region adjacent to a cell active region of the semiconductor substrate. The peripheral gate pattern may be disposed on a peripheral active region of the semiconductor substrate. A cell contact plug may be formed between the cell bit line pattern and the cell active region. A peripheral contact plug may be formed on the peripheral active region on a side of the peripheral gate pattern. An insulating layer may be formed to expose top surfaces of the cell bit line pattern, the peripheral gate pattern, and the cell and peripheral contact plugs at substantially the same level. | 08-05-2010 |
| 20110095350 | VERTICAL TYPE INTEGRATED CIRCUIT DEVICES, MEMORY DEVICES, AND METHODS OF FABRICATING THE SAME - A vertical type integrated circuit device includes a substrate and a pillar vertically protruding from the substrate. The pillar includes a lower impurity region and an upper impurity region therein and a vertical channel region therebetween. A portion of the pillar including the lower impurity region therein includes a mesa laterally extending therefrom. The device further includes a first conductive line extending on a first sidewall of the pillar and electrically contacting the lower impurity region, and a second conductive line extending on a second sidewall of the pillar adjacent the vertical channel region. The second conductive line extends in a direction perpendicular to the first conductive line and is spaced apart from the mesa. Related devices and methods of fabrication are also discussed. | 04-28-2011 |
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| 20090000907 | PALLET EXCHANGER - A pallet exchanger capable of providing a sufficient operation space on an operator's access side, for example, in front of a machining space, without increasing the size of the exchanger is provided. | 01-01-2009 |
| 20090209398 | MACHINE TOOL - A machine tool includes a headstock provided with a main spindle and movable in a direction different from a direction of axis of the main spindle, a tool post mounted on the headstock so as to be movable in the direction of axis of the main spindle, and a tool change unit configured to change a tool attached to the main spindle with another tool after an extremity of the main spindle has been moved to a predetermined tool change position. In this machine tool, when an extremity of the tool post is positioned in the tool change position by the movement of the headstock and also by the movement of the tool post, the tool change unit performs change of a tool attached to the tool post with another tool by the same tool change operation as that for the main spindle. | 08-20-2009 |
| 20110056343 | MACHINE TOOL - In a machine tool, a support member to which a headstock is mounted movably in an upward-downward direction is movable so as to change a position thereof in a horizontal direction relative to that of a bed. A guide member is provided on the bed and configured to guide the support member. An engageable portion at which the support member is supported by the guide member is located in the support member at a level within a range of upward-downward movement of the headstock along the support member. | 03-10-2011 |
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| 20090068605 | QUARTZ GLASS MADE BURNER - A quartz glass burner including a multibranched-tube quartz glass nozzle made up of multiple tubules housed in a quartz glass outer tube, wherein an inner diameter of the outer tube contracted such that an inner diameter of a tip of the outer tube is between 0.65 and 0.90 times the inner diameter of a trunk of the outer tube. The nozzle is structured such that the region from the tubule branching portion to the tip thereof is housed in the outer tube. The outer tube housing the tubules has a length that is greater than or equal to 1.5 times the inner diameter of the tip of the outer tube. Therefore, there is provided a quartz glass burner that causes the flow velocity distribution of gas emitted from outer tube to be uniform at the tip of the burner, thereby enhancing glass microparticle deposition efficiency and also enhancing firepower during flame working. | 03-12-2009 |
| 20090282870 | POROUS GLASS BASE MATERIAL MANUFACTURING METHOD AND GAS FLOW RATE CONTROL APPARATUS - There is provided a method for manufacturing a porous glass base material by using a porous glass base material manufacturing burner having an oxidizing gas discharge port. The method includes supplying a gas mixture obtained by blending together an oxidizing gas and an inert gas to the oxidizing gas discharge port at a start of deposition of a glass fine particle, and increasing a flow rate of the oxidizing gas supplied to the oxidizing gas discharge port while decreasing a flow rate of the inert gas supplied to the oxidizing gas discharge port. | 11-19-2009 |
| 20100050695 | POROUS GLASS PREFORM PRODUCTION APPARATUS - A porous preform production apparatus having a reaction vessel which includes an upper deposition chamber having an air supply inlet and an exhaust outlet, a lower deposition chamber having an air supply inlet, and a top chamber disposed on top of the upper deposition chamber and adapted to lift and store a porous preform formed by deposition, characterized in that the floor of the upper deposition chamber is disposed at a height between the lower end of a straight body part and the deposition tip of the porous glass preform during deposition, and a connection opening which connects the upper deposition chamber with the lower deposition chamber, is provided on the floor of the upper deposition chamber, and that when the aperture diameter of the connection opening is designated as A and the diameter of the porous preform passing through the connection opening as B, the ratio B/A satisfies the expression 0.05≦B/A≦0.6. | 03-04-2010 |
| 20100212357 | BURNER FOR MANUFACTURING POROUS GLASS BASE MATERIAL, AND MANUFACTURING METHOD OF POROUS GLASS BASE MATERIAL - Provided is a burner for manufacturing a porous glass base material, the burner having: a glass raw material gas ejection port; a burnable gas ejection port provided around and centered on the glass raw material gas ejection port; and one or more sequences of small diameter auxiliary gas ejection ports provided inside the burnable gas ejection port, to be coaxial with respect to the glass raw material gas ejection port, where in each of the sequences, the small diameter auxiliary gas ejection ports have the same focal length as each other, and have a concave portion at an end surface thereof. | 08-26-2010 |
| 20100218554 | BURNER FOR PRODUCING GLASS FINE PARTICLES AND METHOD FOR MANUFACTURING POROUS GLASS BASE MATERIAL USING THE SAME - There is provided a burner for producing glass fine particles, including: a glass material gas discharge port; a combustible gas discharge port that is provided so as to surround the glass material gas discharge port, a center of the combustible gas discharge port being positioned on a center of the glass material gas discharge port; and a plurality of small-diameter oxidizing gas discharge ports that are provided within the combustible gas discharge port in one or more concentric circles with respect to the glass material gas discharge port. Here, small-diameter oxidizing gas discharge ports in a same circle have a same focus length, each of the plurality of small-diameter oxidizing gas discharge ports has: a gas introducing portion at which the small-diameter oxidizing gas discharge port branches from a common main tube; and a fastening portion that is positioned between the gas introducing portion and an end of the small-diameter oxidizing gas discharge port that is opposite to the gas introducing portion, and D | 09-02-2010 |
| 20100223959 | METHOD FOR MANUFACTURING OPTICAL FIBER BASE MATERIAL - A method for manufacturing an optical fiber base material includes producing glass fine particles through a hydrolysis of a glass material gas in a flame created by an oxidizing gas and a combustible gas. The method uses a burner including: a central gas discharge port that ejects a gas containing an oxidizing gas; a plurality of small-diameter gas discharge ports that are arranged in a concentric circle with the central gas discharge port so as to externally surround the central gas discharge port, where the plurality of small-diameter gas discharge ports eject a gas containing an oxidizing gas; a combustible gas discharge port that is concentrically arranged with the central gas discharge port so as to externally surround the central gas discharge port, where the combustible gas discharge port has the plurality of small-diameter gas discharge port arranged therein and the combustible gas discharge port ejects a combustible gas; and an oxidizing gas discharge port that is concentrically arranged with the central gas discharge port so as to externally surround the combustible gas discharge port, the oxidizing gas discharge port ejecting an oxidizing gas. Here, a relation of V | 09-09-2010 |
| 20100323311 | BURNER FOR MANUFACTURING POROUS GLASS BASE MATERIAL - The present invention provides a burner for manufacturing a porous glass base material that has small-diameter gas discharge ports and that achieves uniform linear velocity at the gas discharge ports, a uniform reaction, and a stable flame, and improved deposition efficiency. In the burner for manufacturing a porous glass base material, inner diameters of the pipes forming the gas discharge ports positioned farther inward in a radial direction than the gas discharge ports in which the small-diameter gas discharge port nozzles are arranged contract beginning from a position farther on a burner source side than the prescribed length L position, the contraction being greater closer to a burner tip side, and inner diameters of the pipes forming the gas discharge port in which the small-diameter gas discharge port nozzles are arranged and the gas discharge ports that are positioned farther outward in the radial direction than this gas discharge port contract beginning from a position farther on a burner tip side than the prescribed length L position, the contraction being greater closer to a burner tip side. | 12-23-2010 |
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| 20080303085 | SEMICONDUCTOR DEVICE INCLUDING ACTIVE PATTERN WITH CHANNEL RECESS, AND METHOD OF FABRICATING THE SAME - A semiconductor device including an active pattern having a channel recess portion, and a method of fabricating the same, are disclosed. In one embodiment, the semiconductor device includes an active pattern including first active regions and a second active region interposed between the first active regions. The active pattern protrudes above a surface of a semiconductor substrate and includes a channel recess portion above the second active region and between the first active regions. A device isolation layer surrounds the active pattern and has a groove exposing side walls of the recessed second active region. A distance between opposing side walls of the first active regions exposed by the channel recess portion is greater than a distance between side walls of the groove. A gate pattern is located in the channel recess portion and extends along the groove. | 12-11-2008 |
| 20090258488 | METHODS OF FABRICATING SEMICONDUCTOR DEVICES INCLUDING STORAGE NODE LANDING PADS SEPARATED FROM BIT LINE CONTACT PLUGS - A method can include forming gate lines on a semiconductor substrate and forming a first interlayer dielectric layer for insulating the gate lines from each other. First and second contact plugs are formed on the semiconductor substrate and landing pads are formed on the first contact plugs and the first interlayer dielectric layer to overlap portions of the first contact plugs. Recessed contact plugs are formed to have recessed portions by etching the second contact plugs, to be located below an upper surface of the first interlayer dielectric layer, where a cross-sectional total distance between the landing pads and the recessed contact plugs increases due to the recessed portions. | 10-15-2009 |
| 20090291541 | METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES WITH LOCAL RECESS CHANNEL TRANSISTORS - A method of manufacturing a local recess channel transistor in a semiconductor device. A hard mask layer is formed on a semiconductor substrate that exposes a portion of the substrate. The exposed portion of the substrate is etched using the hard mask layer as an etch mask to form a recess trench. A trench spacer is formed on the substrate along a portion of sidewalls of the recess trench. The substrate along a lower portion of the recess trench is exposed after the trench spacer is formed. The exposed portion of the substrate along the lower portion of the recess trench is doped with a channel impurity to form a local channel impurity doped region surrounding the lower portion of the recess trench. A portion of the local channel impurity doped region surrounding the lower portion of the recess trench is doped with a V | 11-26-2009 |
| 20100200933 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device is fabricating using a photoresist mask pattern, and selectively removing portions of a liner nitride layer in a cell region and a peripheral circuit region. A modified FinFET is formed to reduce the influence of signals transmitted by adjacent gate lines in a cell region. A double FinFET and a substantially planar MOSFET are formed in a core region and in a peripheral region, respectively, concurrently with the formation of the modified FinFET. | 08-12-2010 |
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| 20090027812 | MAGNETIC SIGNAL REPRODUCTION SYSTEM AND MAGNETIC SIGNAL REPRODUCTION METHOD - The magnetic signal reproduction system comprises a magnetic recording medium comprising a magnetic layer comprising a ferromagnetic powder and a binder on a nonmagnetic support and a reproduction head, wherein a number of protrusions equal to or greater than 10 nm in height on the magnetic layer surface, as measured by an atomic force microscope, ranges from 50 to 2500/10,000 μm | 01-29-2009 |
| 20090284340 | COMMON MODE FILTER - A common mode filter is provided as one in a three-layered structure with improved high-frequency characteristics. The common mode filter | 11-19-2009 |
| 20100157565 | ELECTRONIC COMPONENT AND MANUFACTURING METHOD OF ELECTRONIC COMPONENT - A manufacturing method of electronic components includes forming a first insulation layer on a substrate, forming a plurality of passive elements on the first insulation layer, forming a second insulation layer on the passive elements, forming a plurality of conductor layers electrically connected to the respective passive elements, on the outer side of the second insulation layer to be exposed to an upper surface of each electronic component, and forming grooves between the electronic components including the respective passive elements to expose side surfaces of each electronic component and parts of the conductor layers from the side surfaces of each electronic component. The manufacturing method further including plating a plurality of external electrodes on the respective conductor layers exposed to the upper surface and the side surfaces of each electronic component, and cutting the substrate to completely separate into individual electronic components. | 06-24-2010 |
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| 20090271861 | Data processing apparatus and access control method therefor - A data processing apparatus according to the present invention includes: peripheral devices each including a plurality of registers each storing a preset value or data; a processing unit to output access authority information indicative of a first access authority level or a second access authority level, which is an access authority level lower than the first access authority level, according to a program to be executed, and to output an access address to specify a specific register; and a peripheral device protection circuit connected to the processing unit and receiving the access authority information and the access address so as to control access of the processing unit to the peripheral devices. The peripheral device protection circuit controls whether to permit the access to the specific register specified by the access address, based on the access authority level indicated by the access authority information. | 10-29-2009 |
| 20100074164 | Communication Systems - A method for transmission of information about downlink and uplink parameters of a intermediate apparatus link in a multi-hop wireless communication system, the system comprising a first node apparatus, a second node apparatus and one or more intermediate apparatuses, each said apparatus being operable to transmit and receive information along a series of links forming a communication path for downlink and uplink communication, the communication path extending between the first node and second node apparatuses via the or each intermediate apparatus, each link comprising either a first node link between the first node apparatus and a said intermediate apparatus or an intermediate apparatus link between a said intermediate apparatus and a said apparatus which is not the first node apparatus, and the system having access to a minimum allocation unit for allocating time and transmission frequency bandwidth, the method comprising: obtaining values of downlink and uplink parameters for a particular intermediate apparatus link; mapping both values onto a single minimum allocation unit and transmitting them towards the first node apparatus. | 03-25-2010 |
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| 20090211301 | METHOD OF FABRICATING AN OPTICAL FIBER PREFORM AND A BURNER THEREFOR - A method of fabricating an optical fiber preform, capable of depositing glass particles with high deposition rate without reducing deposition efficiency and fabricating an optical fiber preform having little bubbles using a burner having a simple structure, is provided. In the invention, a mixed gas of a glass raw material gas with a combustion assisting gas is ejected from an annular nozzle of a burner having a coaxially multiple tube structure, and a burnable gas is ejected from an inner nozzle located inside the annular nozzle. Alternatively, a mixed gas of a glass raw material gas with a burnable gas may be ejected from an annular nozzle, and a combustion assisting gas is ejected from an inner nozzle located inside the annular nozzle. In each case of the above, the burnable gas and the combustion assisting gas, respectively, are ejected from outer nozzles located outside the annular nozzle. | 08-27-2009 |
| 20090214998 | BURNER FOR FABRICATING OPTICAL FIBER PREFORM - A burner for fabricating an optical fiber preform, which can suppress the adhesion and deposition of glass particles to the front end of the burner without enlarging the burner diameter, is provided. The burner has a first tube, a second tube and a third tube coaxially arranged and define a glass raw material gas port, a sealing gas port, and a burnable gas port by the front end portions thereof, and a plurality of small diameter nozzles arranged between the second tube and the third tube, each of the nozzles arranged on a concentric circle relative to the glass raw material gas port and defines a combustion assisting gas port by the front end portion thereof, the front end portion of the second tube protrudes ahead of that of the first tube, and the front end portion of the third tube protrudes ahead of those of the second tube and each of the nozzles. | 08-27-2009 |
