| Patent application number | Description | Published |
|---|
| 20080299708 | ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME - An electronic device has an element formed in the chip region of a substrate, a plurality of interlayer insulating films formed on the substrate, a wire formed in the interlayer insulating films in the chip region, and a plug formed in the interlayer insulating films in the chip region and connecting to the wire. A seal ring extending through the plurality of interlayer insulating films and continuously surrounding the chip region is formed in the peripheral portion of the chip region. A stress absorbing wall extending through the plurality of interlayer insulating films and discretely surrounding the seal ring is formed outside the seal ring. | 12-04-2008 |
| 20080318411 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - In a method of manufacturing a semiconductor device which method is made up of a process of forming a wiring groove using a hard mask, a metal hard mask | 12-25-2008 |
| 20090065903 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A seal ring structure is formed through a multilayer structure of a plurality of dielectric films in a peripheral part of a chip region to surround the chip region. A dual damascene interconnect in which an interconnect and a plug connected to the interconnect are integrated is formed in at least one of the dielectric films in the chip region. Part of the seal ring structure formed in the dielectric film in which the dual damascene interconnect is formed is continuous. A protection film formed on the multilayer structure has an opening on the seal ring. A cap layer connected to the seal ring is formed in the opening. | 03-12-2009 |
| 20090108409 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes an element formed on a substrate, at least one insulating film formed on the substrate, and a seal ring formed in the insulating film so as to surround a region where the element is formed and to extend through the insulating film. The semiconductor device further includes a void region including a void and formed in the insulating film in a region located outside the seal ring when viewed from the element. | 04-30-2009 |
| 20090121359 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes: a semiconductor substrate; a first insulating film (third insulating film | 05-14-2009 |
| 20100308464 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A seal ring structure is formed through a multilayer structure of a plurality of dielectric films in a peripheral part of a chip region to surround the chip region. A dual damascene interconnect in which an interconnect and a plug connected to the interconnect are integrated is formed in at least one of the dielectric films in the chip region. Part of the seal ring structure formed in the dielectric film in which the dual damascene interconnect is formed is continuous. A protection film formed on the multilayer structure has an opening on the seal ring. A cap layer connected to the seal ring is formed in the opening. | 12-09-2010 |
| 20100314720 | ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME - An electronic device has an element formed in the chip region of a substrate, a plurality of interlayer insulating films formed on the substrate, a wire formed in the interlayer insulating films in the chip region, and a plug formed in the interlayer insulating films in the chip region and connecting to the wire. A seal ring extending through the plurality of interlayer insulating films and continuously surrounding the chip region is formed in the peripheral portion of the chip region. A stress absorbing wall extending through the plurality of interlayer insulating films and discretely surrounding the seal ring is formed outside the seal ring. | 12-16-2010 |
