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Makoto Terui

Makoto Terui, Yokohama-Shi JP

Patent application numberDescriptionPublished
20080245766METHOD FOR MANUFACTURING LIQID DISCHARGE HEAD - A method for manufacturing liquid discharge heads having a substrate where energy generation elements that generate energy used for discharging liquid are formed, a wiring electrically connected to the energy generation elements, and a flow path communicating with discharge ports for discharging liquid and corresponding to the energy generation elements. The method includes forming a resin layer on the substrate, a first pattern for forming the wiring on the resin layer, the wiring on the substrate using the first pattern, a second pattern for forming the flow path on the resin layer, a coating layer for coating the second pattern, and the flow path by removing the second pattern.10-09-2008
20080277379METHOD FOR MANUFACTURING A FILTER SUBSTRATE, INKJET RECORDING HEAD, AND METHOD FOR MANUFACTURING THE INKJET RECORDING HEAD - A filter capable of separating or filtering micro foreign particles in a flow passage is provided. A first mask and a second mask are formed on a silicon substrate by dry etching. Before performing the dry etching, a resist of the first mask is subjected to a heat treatment performed at a temperature equal to or higher than a glass transition point. A resist of the second mask is not subjected to such a heat treatment. This processing simultaneously forms in the substrate a groove portion and a wall having a hole that is located in the groove portion. A silicon material located beneath a wide portion of the first mask remains as a wall portion separating the holes.11-13-2008
20090040266LIQUID-DISCHARGING HEAD AND METHOD OF PRODUCING THE SAME - A liquid-discharging head includes a substrate; a flow passage wall-forming layer bonded to the substrate so as to form a flow passage for liquid between the substrate and the flow passage wall-forming layer, the flow passage communicating with a discharge port configured to discharge the liquid; an element configured to generate energy used for discharging the liquid from the discharge port and provided on the flow passage wall-forming layer; a metal layer provided with the discharge port so as to correspond to the element; and a projecting portion made of a metal and extending from the metal layer through the flow passage wall-forming layer and projecting in the direction of the substrate.02-12-2009
20090160913INK JET RECORDING HEAD AND MANUFACTURE METHOD FOR THE SAME - An ink jet recording head has sufficient and uniform ink refill for all orifices and separate flow paths even though the substrate has a high rigidity by dividing a supply port into a plurality of ports. The substrate of the ink jet recording head has a plurality of separate flow paths corresponding to discharge pressure generating elements, a common flow path communicating with the separate flow paths, an ink supply port communicating with the common flow path and supplying ink to the common flow path, and a plurality of beam portions dividing the ink supply port. A recess is formed on the common flow path, extending to the separate flow paths formed nearest to the beam portion.06-25-2009
20090212008LIQUID EJECTION HEAD AND MANUFACTURING METHOD THEREOF - A liquid ejection head includes a substrate, having a front surface and a back surface, provided on the front surface with an energy generating element for generating energy used for ejecting liquid; a supply port, provided so as to penetrate between the front surface and the back surface of the substrate, for supplying the liquid to the energy generating element; a first film provided on the front surface of the substrate; and a second film provided so as to coat a wall of the substrate defining the supply port. The first film and the second film surface-contact each other with respect to two directions substantially perpendicular to each other.08-27-2009
20110027530BEAM, INK JET RECORDING HEAD HAVING BEAMS, AND METHOD FOR MANUFACTURING INK JET RECORDING HEAD HAVING BEAMS - A beam having a base material of silicon monocrystal and at least one projection which is integrally formed so as to be supported at least at one end thereof and which has two surfaces having an orientation plane (02-03-2011

Patent applications by Makoto Terui, Yokohama-Shi JP

Makoto Terui, Tokyo JP

Patent application numberDescriptionPublished
20090096063Semiconductor apparatus with decoupling capacitor - A lead frame type of semiconductor apparatus includes a die pad on which a semiconductor chip is mounted; ground terminals which are to be grounded; power supply terminals which are connected to a power supply; inner leads connected to the ground terminals and power supply terminals, in which a pair of adjacent inner leads for power supply terminal and ground terminal are extended inwardly; a chip capacitor mounting pad which is provided at inner ends of the extended inner leads; and a chip capacitor which is mounted on the chip capacitor mounting pad so that a decoupling capacitor is provided.04-16-2009
20100207244Semiconductor apparatus with decoupling capacitor - A lead frame type of semiconductor apparatus includes a die pad on which a semiconductor chip is mounted; ground terminals which are to be grounded; power supply terminals which are connected to a power supply; inner leads connected to the ground terminals and power supply terminals, in which a pair of adjacent inner leads for power supply terminal and ground terminal are extended inwardly; a chip capacitor mounting pad which is provided at inner ends of the extended inner leads; and a chip capacitor which is mounted on the chip capacitor mounting pad so that a decoupling capacitor is provided.08-19-2010

Patent applications by Makoto Terui, Tokyo JP

Makoto Terui, Jamannshi JP

Patent application numberDescriptionPublished
20100025710Semiconductor device and fabrication method thereof - There is provided a semiconductor device including: a semiconductor chip having a penetrating electrode penetrating through from a first main surface of the semiconductor chip to a second main surface on the opposite side thereof, a photoreceptor portion formed on the first main surface, and a first wire at a periphery of the photoreceptor portion; a light transmitting chip adhered to the first main surface at the periphery of the light transmitting chip, with a bonding layer interposed between the light transmitting chip and the first main surface, the light transmitting chip covering the light transmitting chip; and a light blocking resin layer formed only on the side surfaces of the light transmitting chip and the bonding layer.02-04-2010

Makoto Terui, Yamanachi JP

Patent application numberDescriptionPublished
20090203171SEMICONDUCTOR DEVICE FABRICATING METHOD - A semiconductor device fabricating method includes forming a plurality of semiconductor devices that include one semiconductor chip and a metal plate having an opening portion that surrounds a region where the semiconductor chip is provided, by cutting, at regions where a frame portion exists, a plate-shaped member that includes: a wiring layer including a wiring portion and an insulating portion; a plurality of semiconductor chips disposed on one surface of the wiring layer; a metal plate disposed at a surface of the wiring layer at a side at which the semiconductor chips are provided, and having a plurality of opening portions that surround regions where the semiconductor chips are provided and the frame portion that forms the opening portions; and a sealing resin layer provided so as to seal at least gaps between the semiconductor chips and the metal plate.08-13-2009

Makoto Terui, Yamanashi JP

Patent application numberDescriptionPublished
20080237846SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A BGA substrate which has a back surface to which a heat radiating plate 10-02-2008
20110171779SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A BGA substrate which has a back surface to which a heat radiating plate is attached and an opening for accommodating a relay wiring substrate therein, which is provided in the center of its surface, is used. The relay wiring substrate to which an ASIC chip and a memory chip are flip-chip connected, is bonded to the heat radiating plate in the opening with a thermal conductive bonding material. Further, each of the back surfaces of the ASIC chip and the memory chip is connected to a metal cap for sealing the opening through a thermal conductive material interposed therebetween.07-14-2011

Patent applications by Makoto Terui, Yamanashi JP

Makoto Terui, Ogaki-Shi JP

Patent application numberDescriptionPublished
20120006592WIRING BOARD AND METHOD FOR MANUFACTURING THE SAME - A wiring board including a first insulation layer, a conductive pattern formed on the first insulation layer, a second insulation layer formed on the conductive pattern and the first insulation layer and having an opening portion exposing at least a portion of the conductive pattern, and a connection conductor formed in the opening portion of the second insulation layer such that the connection conductor is positioned on the portion of the conductive pattern. The connection conductor has a tip portion which protrudes from a surface of the second insulation layer and which has a tapered side surface tapering toward an end of the tip portion.01-12-2012
20120008295WIRING BOARD AND METHOD FOR MANUFACTURING THE SAME - A wiring board has a first resin insulation layer, a first conductive pattern formed on the first resin insulation layer, a second resin insulation layer formed on the first conductive pattern and having an opening portion exposing at least a portion of the first conductive pattern, a second conductive pattern formed on the second resin insulation layer, and a via conductor formed in the opening portion of the second resin insulation layer and electrically connecting the first conductive pattern and the second conductive pattern. The via conductor has a side surface extending between the first conductive pattern and the second conductive pattern and a bent portion where an inclination of the side surface of the via conductor changes in a depth direction of the via conductor.01-12-2012