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Makoto Saito

Makoto Saito, Osaka JP

Patent application numberDescriptionPublished
20090209670POLYOLEFIN RESIN FOAM AND THE PROCESS FOR PRODUCING THE SAME - An object of the invention is to provide a polyolefin resin foam which is excellent in flexibility, cushioning property and processability, especially excellent in cutting processability. The present invention relates to a polyolefin resin foam obtained by foaming a polyolefin resin composition using carbon dioxide in a supercritical state, wherein the polyolefin resin composition contains at least: (1) a thermoplastic elastomer composition obtained by subjecting to a dynamically heat treatment a mixture of (A) a rubber, and (B) (B-1) an α-olefin crystalline thermoplastic resin and/or (B-2) an α-olefin amorphous thermoplastic resin, each having a melt tension of less than 3.0 cN at a temperature of 210° C. and at a take-up speed of 2.0 m/min, in the presence of (C) a crosslinking agent; (2) a polyolefin resin; and (3) a nucleant agent having an average particle diameter of from 0.1 μm to less than 2.0 μm. The polyolefin resin foam has a density, for example, of 0.2 g/cm08-20-2009
20090213928TRANSCODER - If the number of frames in a GOP of an input stream is not less than 15, the GOP is determined as a control unit time. If the number of frames in the GOP is less than 15, the following GOP is connected thereto until the number of frames becomes not less than 15 and the connected GOPs are determined as a control unit time. After correcting the control unit time, the average input bit rate S08-27-2009
20090213929TRANSCODER - In a transcoder, a decoder decodes a stream and an encoder encodes the stream again. The encoder calculates the quantization step value by using an average period bit rate (AS08-27-2009
20090237569TRANSCODER - A scene change detection part detects a scene change based on a characteristic amount of an input image. A target code amount setting part executes correction by a correction code amount on a target code amount previously set for suppressing variation of an output code amount around the time of scene change. A quantization step value setting part sets a quantization step value based on the target code amount. That is to say, a transcoder 09-24-2009
20090238266TRANSCODER - A category setting part sets a type of a decoded image based on characteristics of the decoded image which are fineness of the decoded image and an intensity of movement of the decoded image. A code amount setting part sets a target code amount of an output image based on the type of the decoded image. A quantization step value setting part sets a quantization step value of the output image based on the target code amount of the output image. A transcoder can set the target code amount of the output image depending on fineness of the decoded image. The transcoder can distribute the target code amount of the output image to a reference image and a predicted image depending on the intensity of movement of the decoded image.09-24-2009
20110075737TRANSCODER - A generated code amount accumulation part adds up the amounts of generated codes of pictures in 1 GOP which are encoded up to the current stage. An upper limit code amount accumulation part adds up the upper limit amounts of codes of the pictures in the 1 GOP which are encoded up to the current stage. A transmission load of an image transmission system is taken into consideration in the setting of the upper limit amount of codes. An update ratio setting part outputs an update instruction to lower a target rate when the accumulated amount of generated codes exceeds the accumulated upper limit amount of codes. The update ratio setting part does not output the update instruction for lowering the target rate when the accumulated amount of generated codes does not exceed the accumulated upper limit amount of codes. A transcoder can predict whether or not there is a possibility that the load of transmitting image data will increase while each picture in 1 GOP is encoded.03-31-2011
20110182343ENCODER - An average quantization error value of each of I, P, and B pictures in an encoded unit of processing is calculated as an actually measured value having a large variation. An average quantization error value of each of I, P, and B pictures in an uncoded unit of processing is set as a target value having a small variation. In the encoding of the uncoded unit of processing, a result of the encoding of the encoded unit of processing is referenced and fed back thereto. By uniformly setting respective quantization errors of images and further by uniformly setting the respective qualities of the images, the image quality of a whole stream can be subjectively improved. Since the prefetch of the uncoded unit of processing is not needed, it is possible to perform real-time processing without any increase in the circuit scale.07-28-2011

Patent applications by Makoto Saito, Osaka JP

Makoto Saito, Kaitori Tama-Shi JP

Patent application numberDescriptionPublished
20110047626DIGITAL CONTENT MANAGEMENT SYSTEM AND APPARATUS - There are provided a digital content management apparatus which further embodies a digital content management apparatus used with a user terminal, and a system which protects the secrets of a digital content. The system and the apparatus are a real time operating system using a micro-kernel, which is incorporated in the digital content management apparatus as an interruption process having high priority. When a user uses the digital content, whether there is an illegitimate usage or not, is watched by interrupting the usage process. In the case where illegitimate usage is carried out, a warning is given or the usage is stopped. The decryption/re-encryption functions of the digital content management apparatus having the decryption/re-encryption functions are not restricted to the inside of the user apparatus. By providing the decryption/re-encryption functions between the networks, the exchange of secret information between different networks is secured. By using this apparatus for converting a crypt algorithm, information exchange is made possible between systems which adopt different algorithms.02-24-2011

Makoto Saito, Hyogo JP

Patent application numberDescriptionPublished
20100270426AIRCRAFT ACTUATOR - An aircraft actuator is provided that can achieve a significant weight reduction, while securing a sufficient tensile strength and a sufficient buckling strength, even if it is provided with a reaction link in which large bent portions are formed. A reaction link is made of fiber reinforced plastic, and includes a pair of linear portions, a coupling portion, and a pair of bent portions. The cross section at the pair of linear portions, the coupling portion, and the pair of bent portions is formed as a hollow cross section. The outer cross sectional area of the hollow cross section at each of the pair of bent portions is configured to be larger than the outer cross sectional area of the hollow cross section at each of the pair of linear portions.10-28-2010

Makoto Saito, Tokyo JP

Patent application numberDescriptionPublished
20100205993HEAT EXCHANGER ARRANGED IN CEILING-BURIED AIR CONDITIONER AND CEILING-BURIED AIR CONDITIONER - A heat exchanger 08-19-2010
20110125543SUPPLY CHAIN OPTIMIZATION SYSTEM AND METHOD FOR OPTIMIZING SUPPLY CHAIN - Provided is a supply chain optimization system and a method for optimizing a supply chain that can prevent a production delay due to the lack of materials and a shipment delay due to the lack of stock products even if a sales plan fluctuates on an increase in sales of the supply chain as a whole and that can optimize the stocks of the products and materials and a physical distribution route of product supplies. The supply chain optimization system and the method for optimizing the supply chain calculate through a simulation in which a supply chain model is used so that a total sum of stock costs for products and materials and logistics costs therefor are minimized with respect to the number of stock products and materials which do not cause product defects at a fluctuation time of a sales plan on a condition in which the stock products increased in accordance with the fluctuation of the sales plan are set to factory stocks. Further, number of the stocks, costs for the stocks and logistics costs are set to a KPI of the supply chain to be managed. In addition, a physical distribution route from a factory increased in the stock products is optimized through the simulation.05-26-2011
20110232308AIR CONDITIONER - An air conditioner that can perform defrosting efficiently while heating or the like is continued even if the air conditioner is configured by one outdoor unit is obtained. In an air conditioner in which an outdoor unit having a compressor that pressurizes and discharges a refrigerant, a plurality of outdoor heat exchangers that exchange heat between outside air and the refrigerant, and a four-way valve that switches a channel on the basis of an operation form and a plurality of indoor units, each having an indoor heat exchanger that exchanges heat between the air in a space to be air-conditioned and the refrigerant and an indoor throttle device are connected by a pipeline so as to configure a refrigerant circuit, a bypass pipeline that divides the refrigerant discharged from the compressor so as to allow the refrigerant to flow into each of the outdoor heat exchangers connected in parallel by a pipeline, a plurality of outdoor third opening/closing valves that pass or shut off the refrigerant from the bypass pipeline to each of the outdoor heat exchangers, and a plurality of outdoor second opening/closing valves that pass or shut off the refrigerant from the indoor unit to each of the outdoor heat exchangers are disposed in the outdoor unit.09-29-2011

Patent applications by Makoto Saito, Tokyo JP

Makoto Saito, Tsukuba JP

Patent application numberDescriptionPublished
20100111808GROUP-III NITRIDE MONOCRYSTAL WITH IMPROVED CRYSTAL QUALITY GROWN ON AN ETCHED-BACK SEED CRYSTAL AND METHOD OF PRODUCING THE SAME - The present invention provides a method for growing group III-nitride crystals wherein the group III-nitride crystal growth occurs on an etched seed crystal. The etched seed is fabricated prior to growth using a temperature profile which produces a high solubility of the group III-nitride material in a seed crystals zone as compared to a source materials zone. The measured X-ray diffraction of the obtained crystals have significantly narrower Full Width at Half Maximum values as compared to crystals grown without etch back of the seed crystal surfaces prior to growth.05-06-2010

Makoto Saito, Kashiwa-Shi JP

Patent application numberDescriptionPublished
20100098465IMAGE FORMING APPARATUS - In the image forming apparatus of this invention, a bending habit is applied to a PET sheet by a heating iron to form an end mylar into an L shape. In a full-color mode, the end mylar presses an end of an intermediate transfer belt while being elastically deformed. In a black monochrome mode, the intermediate transfer belt is spaced from photosensitive drums by up to 2 mm compared with the full-color mode. Instead of the photosensitive drums spaced from the intermediate transfer belt, the end mylar regulates the end of the intermediate transfer belt in a vertical direction by a slightly small pressing force with a recovered bend, whereby flapping of the intermediate transfer belt is reduced.04-22-2010

Makoto Saito, Santa Barbara, CA US

Patent application numberDescriptionPublished
20080308907PLANAR NONPOLAR m-PLANE GROUP III NITRIDE FILMS GROWN ON MISCUT SUBSTRATES - A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an a-axis direction comprising a 0.15° or greater miscut angle towards the a-axis direction and a less than 30° miscut angle towards the a-axis direction.12-18-2008
20090039356PLANAR NONPOLAR M-PLANE GROUP III-NITRIDE FILMS GROWN ON MISCUT SUBSTRATES - A nonpolar III-nitride film grown on a miscut angle of a substrate. The miscut angle towards the <000-1> direction is 0.75° or greater miscut and less than 27° miscut towards the <000-1> direction. Surface undulations are suppressed and may comprise faceted pyramids. A device fabricated using the film is also disclosed. A nonpolar III-nitride film having a smooth surface morphology fabricated using a method comprising selecting a miscut angle of a substrate upon which the nonpolar III-nitride films are grown in order to suppress surface undulations of the nonpolar III-nitride films. A nonpolar III-nitride-based device grown on a film having a smooth surface morphology grown on a miscut angle of a substrate which the nonpolar III-nitride films are grown. The miscut angle may also be selected to achieve long wavelength light emission from the nonpolar film.02-12-2009
20090039367LIGHT EMITTING DIODES WITH A P-TYPE SURFACE BONDED TO A TRANSPARENT SUBMOUNT TO INCREASE LIGHT EXTRACTION EFFICIENCY - An (Al,Ga,In)N-based light emitting diode (LED), comprising a p-type surface of the LED bonded with a transparent submount material to increase light extraction at the p-type surface, wherein the LED is a substrateless membrane.02-12-2009
20090141502LIGHT OUTPUT ENHANCED GALLIUM NITRIDE BASED THIN LIGHT EMITTING DIODE - A gallium nitride (GaN) based light emitting device, wherein the device comprises a first surface and a second surface, and the first surface and second surface are separated by a thickness of less than 100 micrometers, and preferably less than 20 micrometers. The first surface may be roughened or textured. A silver or silver alloy may be deposited on the second surface. The second surface of the device may be bonded to a permanent substrate.06-04-2009
20090294775HEXAGONAL WURTZITE TYPE EPITAXIAL LAYER POSSESSING A LOW ALKALI-METAL CONCENTRATION AND METHOD OF CREATING THE SAME - A method of obtaining a hexagonal würtzite type epitaxial layer with a low impurity concentration of alkali-metal by using a hexagonal würtzite substrate possessing a higher impurity concentration of alkali-metal, wherein a surface of the substrate upon which the epitaxial layer is grown has a crystal plane which is different from the c-plane.12-03-2009
20100052008ENHANCEMENT OF OPTICAL POLARIZATION OF NITRIDE LIGHT-EMITTING DIODES BY WAFER OFF-AXIS CUT - An off-axis cut of a nonpolar III-nitride wafer towards a polar (−c) orientation results in higher polarization ratios for light emission than wafers without such off-axis cuts. A 5° angle for an off-axis cut has been confirmed to provide the highest polarization ratio (0.9) than any other examined angles for off-axis cuts between 0 and 27°.03-04-2010
20100075107HEXAGONAL WURTZITE SINGLE CRYSTAL AND HEXAGONAL WURTZITE SINGLE CRYSTAL SUBSTRATE - A technique for growing high quality bulk hexagonal single crystals using a solvo-thermal method, and a technique for achieving the high quality and high growth rate at the same time. The crystal quality strongly depends on the growth planes, wherein a nonpolar or semipolar seed surface such as {10-10}, {10-11}, {10-1-1}, {10-12}, {10-1-2}, {11-20}, {11-22}, {11-2-2} gives a higher crystal quality as compared to a c-plane seed surface such as (0001) and (000-1). Also, the growth rate strongly depends on the growth planes, wherein a semipolar seed surface such as {10-12}, {10-1-2}, {11-22}, {11-2-2} gives a higher growth rate. High crystal quality and high growth rate are achievable at the same time by choosing the suitable growth plane. The crystal quality also depends on the seed surface roughness, wherein high crystal quality is achievable when the nonpolar or semipolar seed surface RMS roughness is below 100 nm; on the other hand, the crystal grown from the Ga-face or N-face results in poor crystal quality, even though grown from an atomically smooth surface.03-25-2010

Patent applications by Makoto Saito, Santa Barbara, CA US

Makoto Saito, Nagano JP

Patent application numberDescriptionPublished
20080256748Hinge Device and Opening/Closing Mechanism Using the Hinge Device - Provided is a hinge device which allows the display device to be watched at an arbitrary angle, thus enabling all the passengers to watch the display at an optimum angle, which helps to achieve an improvement in terms of quality and reliable dropping (opening) by causing the dropping (opening) movement of the display device due to its own weight to be reliable and gentle in the range from the start to an angle of approximately 30°, and which helps to achieve an improvement in terms of operational feel in the free stop range, thus allowing light operation. The hinge device for connecting one member and another member so that the one member and the other member can open and close includes: a bracket which is fixed to one member; a shaft which is rotatably attached to the bracket and which is fixed to another member; a braking member which is attached to the shaft so that the braking member is non-rotatable but axially movable and which is held in sliding contact with the bracket and adapted to make mutual relative rotation; and a plate spring member which is attached to the shaft so that the plate spring member is non-rotatable but axially movable and which holds the braking member in press contact with the bracket. A surface of the bracket held in sliding contact with the braking member is provided with a recessed groove one end portion of which is formed as a tapered portion, with the surface of the braking member held in sliding contact with the bracket being provided with a protrusion coming into sliding contact with a sliding contact surface, a recessed groove, and a tapered portion of the bracket, the protrusion having a flat top portion at least one end of which is formed as a tapered portion continuous with the flat top portion.10-23-2008
20090309407ARMREST - An armrest, has a stationary shaft rotatably supporting an armrest body against a seat frame. The stationary shaft is inserted, so as to have fastening tolerance, inside a coil lock spring and to have a stationary-side hook and a free-side hook. A diameter of the coil lock spring is reduced or enlarged according to a normal or a reverse rotation, respectively, of the armrest body, so as to prevent or permit, respectively, the rotation of the armrest body. One of the inside diameter of the lock spring and the outside diameter of the stationary shaft is tapered in said shaft's axial direction.12-17-2009

Patent applications by Makoto Saito, Nagano JP

Makoto Saito, Kanagawa JP

Patent application numberDescriptionPublished
20090208439Agent for Permanent Hair Waving Containing Heterocyclic Mercapto Compound - Disclosed is an agent for permanent hair waving that can realize permanent hair waving even in the neutral to weakly acidic pH range in which irritation particularly to the skin is not significant. The agent for permanent hair waving includes at least one heterocyclic mercapto compound represented by formula (1):08-20-2009

Patent applications by Makoto Saito, Kanagawa JP

Makoto Saito, Yokohama-Shi JP

Patent application numberDescriptionPublished
20080214019METHOD OF MANUFACTURING OXIDE FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing an oxide film includes jetting onto a substrate a high-pressure solution containing an oxygen source and having a pressure of 5 MPa, and forming an oxide film on the substrate using the jetted high-pressure solution.09-04-2008

Makoto Saito, Ibaraki JP

Patent application numberDescriptionPublished
20110237054PLANAR NONPOLAR GROUP III-NITRIDE FILMS GROWN ON MISCUT SUBSTRATES - A nonpolar III-nitride film grown on a miscut angle of a substrate. The miscut angle towards the <000-1> direction is 0.75° or greater miscut and less than 27° miscut towards the <000-1> direction. Surface undulations are suppressed and may comprise faceted pyramids. A device fabricated using the film is also disclosed. A nonpolar III-nitride film having a smooth surface morphology fabricated using a method comprising selecting a miscut angle of a substrate upon which the nonpolar III-nitride films are grown in order to suppress surface undulations of the nonpolar III-nitride films. A nonpolar III-nitride-based device grown on a film having a smooth surface morphology grown on a miscut angle of a substrate which the nonpolar III-nitride films are grown. The miscut angle may also be selected to achieve long wavelength light emission from the nonpolar film.09-29-2011
20110300051GROUP-III NITRIDE MONOCRYSTAL WITH IMPROVED PURITY AND METHOD OF PRODUCING THE SAME - A method to improve the crystal purity of a group-I11 nitride crystal grown in an ammonothermal growth system by removing any undesired material (i.e., impurities) from within the system prior to, in-between, or after the growth steps for the group-I11 nitride crystal. Impurities are removed from the ammonothermal growth system by first bringing the impurities into solution and then removing part or all of the solution from the growth system. The result is a high purity group-I11 nitride crystal grown in the ammonothermal growth system.12-08-2011

Makoto Saito, Tsumagoi JP

Patent application numberDescriptionPublished
20110282792CONTROLLING DATABASE COPYRIGHTS - Briefly, in accordance with one or more embodiments, a utilization permit key may be pre-defined to permit at least one of displaying, editing, storing, copying, and/or transferring of digital data.11-17-2011

Makoto Saito, Mie JP

Patent application numberDescriptionPublished
20120000542MASS FLOW CONTROLLER, MASS FLOW CONTROLLER SYSTEM, SUBSTRATE PROCESSING DEVICE, AND GAS FLOW RATE ADJUSTING METHOD - According to one embodiment, a flow rate adjusting unit is disposed on a gas passageway and includes a valve that adjusts the flow rate of a gas and an actuator that controls the displacement amount of the valve. A displacement amount storage unit stores displacement amount information in which a displacement amount of the valve, used when a gas flows into the gas passageway at a flow rate defined according to a process procedure before performing the process procedure, is obtained in advance for each process procedure. A setting circuit acquires the displacement amount corresponding to the process procedure from the displacement amount storage unit, and controls the actuator on the basis of the acquired displacement amount.01-05-2012
20120000887PLASMA TREATMENT APPARATUS AND PLASMA TREATMENT METHOD - According to one embodiment, there is provided a plasma treatment apparatus including an electrode, a first power supply circuit, a plasma generating unit, a second power supply circuit, a sensing unit, and a control unit. The electrode is arranged inside a treatment chamber. On the electrode, a substrate to be treated is placed. The first power supply circuit supplies power to the electrode. The plasma generating unit generates plasma in a space separated from the electrode inside the treatment chamber. The second power supply circuit supplies power to the plasma generating unit. The sensing unit senses a parameter output from the first power supply circuit. The control unit controls power supplied from the second power supply circuit so that the parameter sensed by the sensing unit becomes close to or substantially equal to a target value.01-05-2012