Patent application number | Description | Published |
20130126208 | COATING AND ELECTRONIC COMPONENT - A coating is provided to a conductor, and has a layered structure of a palladium layer. The palladium layer is amorphous and contains phosphorus in a concentration ranging from 7.3% by mass to 11.0% by mass. | 05-23-2013 |
20130130059 | COATING AND ELECTRONIC COMPONENT - A coating is provided to a conductor, and has a layered structure of a palladium layer. The palladium layer has a crystal plane whose orientation rate is 65% or more. | 05-23-2013 |
20130135834 | TERMINAL STRUCTURE, PRINTED CIRCUIT BOARD, MODULE BOARD, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING TERMINAL STRUCTURE - The electronic device includes a terminal structure and a printed circuit board including the terminal structure. The terminal structure includes a solder-joint conductor region placed on a wiring conductor, an intermediate layer contacting with the conductor region, and a solder region contacting with the intermediate layer. The intermediate layer includes an intermetallic compound including tin and at least one of copper and nickel as principal components. When the indentation elastic modulus of the conductor region is E | 05-30-2013 |
20130192873 | STRUCTURE BODY AND ELECTRONIC COMPONENT AND PRINTED WIRING BOARD INCLUDING THE SAME - This structure body includes a conductor comprising Cu as a main component, an intermediate layer formed on the conductor, and a protective layer formed on the intermediate layer, the intermediate layer includes at least Cu, Sn, Ni, and P, and the protective layer includes at least Ni and P. | 08-01-2013 |
20140054767 | TERMINAL STRUCTURE AND SEMICONDUCTOR DEVICE - The present invention relates to a terminal structure comprising; a base material | 02-27-2014 |
20140054768 | TERMINAL STRUCTURE AND SEMICONDUCTOR DEVICE - The present invention relates to a terminal structure comprising: a base material | 02-27-2014 |
20140054769 | TERMINAL STRUCTURE, AND SEMICONDUCTOR ELEMENT AND MODULE SUBSTRATE COMPRISING THE SAME - A preferred terminal structure comprises a base material; an electrode formed on the base material; an insulating covering layer formed on the base material and on the electrode and having an opening exposing at least part of the electrode; an under bump metal layer containing Ni, filling the opening on the electrode; and a dome-shaped bump containing Sn and Ti, covering the under bump metal layer, wherein at least part of the under bump metal layer has a portion sandwiched between the external electrode and the insulating covering layer. | 02-27-2014 |
20140054770 | TERMINAL STRUCTURE, AND SEMICONDUCTOR ELEMENT AND MODULE SUBSTRATE COMPRISING THE SAME - A preferred terminal structure comprises a base material; an electrode formed on the base material; an insulating covering layer formed on the base material and on the electrode and having an opening exposing at least part of the electrode; an under bump metal layer containing Ni, formed in a region in the opening on the electrode so that an upper surface of the metal layer is at a position lower than an upper surface of the insulating covering layer in a peripheral edge portion of the opening; and a dome-shaped bump containing Sn and Ti, formed in a region in the opening on the under bump metal layer, wherein an end portion of a boundary between the under bump metal layer and the bump is in contact with an inner wall of the opening portion in the insulating covering layer. | 02-27-2014 |