| Patent application number | Description | Published |
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| 20080318158 | Underlayer Coating Forming Composition for Lithography Containing Polysilane Compound - There is provided an underlayer coating for lithography that is used in lithography process of the manufacture of semiconductor devices, that can be used as a hardmask, and that causes no intermixing with photoresists; and a composition for forming the underlayer coating. | 12-25-2008 |
| 20100022089 | Method for manufacturing semiconductor device using quadruple-layer laminate - There is provided a laminate used as an underlayer layer for a photoresist in a lithography process of a semiconductor device and a method for manufacturing a semiconductor device by using the laminate. The method comprising: laminating each layer of an organic underlayer film (layer A), a silicon-containing hard mask (layer B), an organic antireflective film (layer C) and a photoresist film (layer D) in this order on a semiconductor substrate. The method also comprises: forming a resist pattern in the photoresist film (layer D); etching the organic antireflective film (layer C) with the resist pattern; etching the silicon-containing hard mask (layer B) with the patterned organic antireflective film (layer C); etching the organic underlayer film (layer A) with the patterned silicon-containing hard mask (layer B); and processing the semiconductor substrate with the patterned organic underlayer film (layer A). | 01-28-2010 |
| 20100210765 | RESIST UNDERLAYER FILM-FORMING COMPOSITION, PRODUCTION METHOD OF SEMICONDUCTOR DEVICE USING THE SAME, AND ADDITIVE FOR RESIST UNDERLAYER FILM-FORMING COMPOSITION - There is provided a composition for forming a resist underlayer film that the adhesion with a resist applied on the resist underlayer film is enhanced and the collapse of a resist pattern is suppressed. A resist underlayer film-forming composition for lithography comprising: a polymer having silicon atoms in the backbone; a compound of a polycyclic structure; and an organic solvent, wherein the compound of a polycyclic structure has at least two carboxyl groups as substituents; the two carboxyl groups are individually bonded to two carbon atoms adjacent to each other forming the polycyclic structure; and the two carboxyl groups both have an endo configuration or an exo configuration, or have a cis configuration. | 08-19-2010 |
| 20100291487 | SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION HAVING UREA GROUP - There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography comprising: a hydrolyzable organosilane having a urea group; a hydrolysis product thereof; or a hydrolysis-condensation product thereof. The hydrolyzable organosilane is for example a compound of Formula (1): | 11-18-2010 |
| 20100304305 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING POLYMER HAVING NITROGEN-CONTAINING SILYL GROUP - There is provided a resist underlayer film for lithography causing no intermixing with a photoresist and having a dry etching rate higher than that of the photoresist, and a resist underlayer film forming composition for forming the underlayer film. A resist underlayer film forming composition for lithography comprising: a polymer containing a partial structure of Formula (1): | 12-02-2010 |
| 20100330505 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICONE HAVING CYCLIC AMINO GROUP - There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography comprising a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof as a silane, wherein a silane having a cyclic amino group is contained in an amount of less than 1% by mole, preferably 0.01 to 0.95% by mole. A film forming composition comprising a hydrolyzable organosilane having a cyclic amino group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. A resist underlayer film forming composition for lithography comprising a hydrolyzable organosilane having a cyclic amino group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The cyclic amino group may be a secondary amino group or a tertiary amino group. The hydrolyzable organosilane is a compound of Formula (1): | 12-30-2010 |
| 20110045404 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR LITHOGRAPHY AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE - There is provided a composition for forming a resist underlayer film that can be homogeneously applied and a sublimate is suppressed during the thermal curing. There is also provided a composition for forming a resist underlayer film having a high selection ratio of dry etching relative to a resist applied thereon. A composition for forming a resist underlayer film for lithography comprising: a polysilane compound having a unit structure of Formula (1): | 02-24-2011 |
| 20110143149 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICONE HAVING ONIUM GROUP - There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hard mask or a bottom anti-reflective coating, or a resist underlayer film causing no intermixing with a resist and having a dry etching rate higher than that of the resist. A film forming composition comprising a silane compound having an onium group, wherein the silane compound having an onium group is a hydrolyzable organosilane having, in a molecule thereof, an onium group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The composition uses as a resist underlayer film forming composition for lithography. A composition comprising a silane compound having an onium group, and a silane compound having no onium group, wherein the silane compound having an onium group exists in the whole silane compound at a ratio of less than 1% by mol, for example 0.01 to 0.95% by mol. The hydrolyzable organosilane may be a compound of Formula: R | 06-16-2011 |
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| 20090016149 | MATERIAL MOISTURE CONTENT ADJUSTMENT METHOD - When making moisture content adjustment by adding liquid such as water to a raw material such as pulverulent material including bentonite, uniform mixing of the liquid such as water with the raw material is given with relatively simple facilities, moisture content adjustment of a large quantity of raw materials is attainable, and besides, a material having satisfactory performances such as impermeability is obtainable through uniform moisture content adjustment. Within a mixing tank ( | 01-15-2009 |
| 20090252881 | METHOD OF SPRAY APPLICATION, AND SPRAY APPARATUS, FOR BENTONITE MATERIAL - The present invention provides a spray method and spray apparatus for bentonite-based material that allow forming a bentonite layer of high dry density. A spray apparatus | 10-08-2009 |
| 20090327599 | VIRTUAL TAPE DEVICE, DATA BACKUP METHOD, AND RECORDING MEDIUM - To provide a virtual tape device to reduce power consumption by utilizing a disk array device conforming to MAID. Two or more disk devices are divided into an information managing disk group whose power is kept on at all times and to two or more recording disk groups whose power is turned on/off as necessary when managing data. The virtual tape device includes: a volume information managing part which manages positions of virtual tapes allotted to storage areas of the recording disk groups; and a data managing part which rearranges, in the recording disk group whose power is on, the virtual tape for storing the data to the recording disk group whose power is off based on writing/reading information stored in the information managing disk group and positional information of the virtual tapes, and executes a control to write backup data to the recording disk group whose power is on. | 12-31-2009 |
