Patent application number | Description | Published |
20080318158 | Underlayer Coating Forming Composition for Lithography Containing Polysilane Compound - There is provided an underlayer coating for lithography that is used in lithography process of the manufacture of semiconductor devices, that can be used as a hardmask, and that causes no intermixing with photoresists; and a composition for forming the underlayer coating. | 12-25-2008 |
20100022089 | Method for manufacturing semiconductor device using quadruple-layer laminate - There is provided a laminate used as an underlayer layer for a photoresist in a lithography process of a semiconductor device and a method for manufacturing a semiconductor device by using the laminate. The method comprising: laminating each layer of an organic underlayer film (layer A), a silicon-containing hard mask (layer B), an organic antireflective film (layer C) and a photoresist film (layer D) in this order on a semiconductor substrate. The method also comprises: forming a resist pattern in the photoresist film (layer D); etching the organic antireflective film (layer C) with the resist pattern; etching the silicon-containing hard mask (layer B) with the patterned organic antireflective film (layer C); etching the organic underlayer film (layer A) with the patterned silicon-containing hard mask (layer B); and processing the semiconductor substrate with the patterned organic underlayer film (layer A). | 01-28-2010 |
20100210765 | RESIST UNDERLAYER FILM-FORMING COMPOSITION, PRODUCTION METHOD OF SEMICONDUCTOR DEVICE USING THE SAME, AND ADDITIVE FOR RESIST UNDERLAYER FILM-FORMING COMPOSITION - There is provided a composition for forming a resist underlayer film that the adhesion with a resist applied on the resist underlayer film is enhanced and the collapse of a resist pattern is suppressed. A resist underlayer film-forming composition for lithography comprising: a polymer having silicon atoms in the backbone; a compound of a polycyclic structure; and an organic solvent, wherein the compound of a polycyclic structure has at least two carboxyl groups as substituents; the two carboxyl groups are individually bonded to two carbon atoms adjacent to each other forming the polycyclic structure; and the two carboxyl groups both have an endo configuration or an exo configuration, or have a cis configuration. | 08-19-2010 |
20100291487 | SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION HAVING UREA GROUP - There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography comprising: a hydrolyzable organosilane having a urea group; a hydrolysis product thereof; or a hydrolysis-condensation product thereof. The hydrolyzable organosilane is for example a compound of Formula (1): | 11-18-2010 |
20100304305 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING POLYMER HAVING NITROGEN-CONTAINING SILYL GROUP - There is provided a resist underlayer film for lithography causing no intermixing with a photoresist and having a dry etching rate higher than that of the photoresist, and a resist underlayer film forming composition for forming the underlayer film. A resist underlayer film forming composition for lithography comprising: a polymer containing a partial structure of Formula (1): | 12-02-2010 |
20100330505 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICONE HAVING CYCLIC AMINO GROUP - There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography comprising a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof as a silane, wherein a silane having a cyclic amino group is contained in an amount of less than 1% by mole, preferably 0.01 to 0.95% by mole. A film forming composition comprising a hydrolyzable organosilane having a cyclic amino group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. A resist underlayer film forming composition for lithography comprising a hydrolyzable organosilane having a cyclic amino group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The cyclic amino group may be a secondary amino group or a tertiary amino group. The hydrolyzable organosilane is a compound of Formula (1): | 12-30-2010 |
20110045404 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR LITHOGRAPHY AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE - There is provided a composition for forming a resist underlayer film that can be homogeneously applied and a sublimate is suppressed during the thermal curing. There is also provided a composition for forming a resist underlayer film having a high selection ratio of dry etching relative to a resist applied thereon. A composition for forming a resist underlayer film for lithography comprising: a polysilane compound having a unit structure of Formula (1): | 02-24-2011 |
20110143149 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICONE HAVING ONIUM GROUP - There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hard mask or a bottom anti-reflective coating, or a resist underlayer film causing no intermixing with a resist and having a dry etching rate higher than that of the resist. A film forming composition comprising a silane compound having an onium group, wherein the silane compound having an onium group is a hydrolyzable organosilane having, in a molecule thereof, an onium group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The composition uses as a resist underlayer film forming composition for lithography. A composition comprising a silane compound having an onium group, and a silane compound having no onium group, wherein the silane compound having an onium group exists in the whole silane compound at a ratio of less than 1% by mol, for example 0.01 to 0.95% by mol. The hydrolyzable organosilane may be a compound of Formula: R | 06-16-2011 |
20110287369 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING ANION GROUP - There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography comprising a silane compound containing an anion group, wherein the silane compound containing an anion group is a hydrolyzable organosilane in which an organic group containing an anion group is bonded to a silicon atom and the anion group forms a salt structure, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The anion group may be a carboxylic acid anion, a phenolate anion, a sulfonic acid anion, or a phosphonic acid anion. The hydrolyzable organosilane may be a compound of Formula (1): R | 11-24-2011 |
20120070994 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING SULFIDE BOND - There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hard mask; and a forming method of a resist pattern using the underlayer film forming composition for lithography. A resist underlayer film forming composition for lithography comprising: as a silicon atom-containing compound, a hydrolyzable organosilane containing a sulfur atom-containing group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein in the whole silicon atom-containing compound, the ratio of a sulfur atom to a silicon atom is less than 5% by mole. The hydrolyzable organosilane is preferably a compound of Formula (1): [R | 03-22-2012 |
20120178261 | SILICON-CONTAINING COMPOSITION HAVING SULFONAMIDE GROUP FOR FORMING RESIST UNDERLAYER FILM - There is provided a lithographic resist underlayer film-forming composition for forming a resist underlayer film which can be used as a hard mask. A lithographic resist underlayer film-forming composition including a silane compound having sulfonamide group, wherein the silane compound having sulfonamide group is a hydrolyzable organosilane having a sulfonamide group in the molecule, a hydrolyzate thereof, or a hydrolytic condensation product thereof. The composition including a silane compound having sulfonamide group and a silane compound lacking a sulfonamide group, wherein the silane compound having sulfonamide group is present within the silane compounds overall in a proportion of less than 1 mol %, for example 0.1 to 0.95 mol %. | 07-12-2012 |
20120315765 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING NITROGEN-CONTAINING RING - There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography, includes as a silane compound, a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable organosilane is a hydrolyzable organosilane of Formula (1): | 12-13-2012 |
20130078814 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING ANION GROUP - There is provided a method of making a semiconductor device utilizing a resist underlayer film forming composition comprising a silane compound containing an anion group, wherein the silane compound containing an anion group is a hydrolyzable organosilane in which an organic group containing an anion group is bonded to a silicon atom and the anion group forms a salt structure, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The anion group may be a carboxylic acid anion, a phenolate anion, a sulfonic acid anion, or a phosphonic acid anion. The hydrolyzable organosilane may be a compound of Formula (1): R | 03-28-2013 |
20130183830 | SILICON-CONTAINING COMPOSITION FOR FORMATION OF RESIST UNDERLAYER FILM, WHICH CONTAINS ORGANIC GROUP CONTAINING PROTECTED ALIPHATIC ALCOHOL - Described herein are compositions for forming an underlayer film for a solvent-developable resist. These compositions can include a hydrolyzable organosilane having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof and a solvent. The composition can form a resist underlayer film including, a hydrolyzable organosilane, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof, the silicon atom in the silane compound having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group in a ratio of 0.1 to 40% by mol based on the total amount of silicon atoms. Also described is a method for applying the composition onto a semiconductor substrate and baking the composition to form a resist underlayer film. | 07-18-2013 |
20130224957 | SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION HAVING FLUORINE-BASED ADDITIVE - A resist underlayer film forming composition for lithography includes: as a component (I), a fluorine-containing highly branched polymer obtained by polymerizing a monomer A having two or more radical polymerizable double bonds in the molecule thereof, a monomer B having a fluoroalkyl group and at least one radical polymerizable double bond in the molecule thereof, and a monomer D having a silicon atom-containing organic group and at least one radical polymerizable double bond in the molecule thereof, in the presence of a polymerization initiator C in a content of 5% by mole or more and 200% by mole or less, based on the total mole of the monomer A, the monomer B, and the monomer D; and as a component (II), a hydrolyzable silane compound, a hydrolysis product thereof, a hydrolysis-condensation product thereof, or a silicon-containing compound that is a combination of these compounds. | 08-29-2013 |
20130302991 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, CONTAINING SILICON THAT BEARS DIKETONE-STRUCTURE-CONTAINING ORGANIC GROUP - A composition for forming a lithographic resist underlayer film, including, as a silane, a hydrolyzable organosilane, a hydrolysate thereof, or a hydrolytic condensate thereof, wherein the silane includes a hydrolyzable organosilane of Formula (1) below: | 11-14-2013 |
20140120730 | THIN FILM FORMING COMPOSITION FOR LITHOGRAPHY CONTAINING TITANIUM AND SILICON - A thin film forming composition for forming resist underlayer film useable in the production of a semiconductor device, and a resist upper layer film absorbs undesirable UV light with a thin film as an upper layer of the EUV resist before undesirable UV light reaches the EUV resist layer in EUV lithography, an underlayer film (hardmask) for an EUV resist, a reverse material, and an underlayer film for a resist for solvent development. The thin film forming composition useable together with a resist in a lithography process, comprising a mixture of titanium compound (A) selected from: | 05-01-2014 |
20140170855 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING SULFONE STRUCTURE - A composition for forming a resist underlayer film for lithography, including: as a silane, a hydrolyzable organosilane, a hydrolysate of the hydrolyzable organosilane, or a hydrolysis-condensation product of the hydrolyzable organosilane, wherein the hydrolyzable organosilane is a compound of Formula (1): | 06-19-2014 |
20140377957 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION FOR SOLVENT DEVELOPMENT - A resist underlayer film for a resist pattern formation by developing a resist with organic solvent after exposure of resist. Method for manufacturing a semiconductor includes: applying onto a substrate a resist underlayer film forming composition including hydrolyzable silanes, hydrolysis products of hydrolyzable silanes, hydrolysis-condensation products of hydrolyzable silanes, or a combination thereof. Hydrolyzable silanes being silane of Formulas (1), (2) and (3). Silane of Formulas (1), (2) and (3) in total silanes in a ratio % by mole of 45-90:6-20:0-35; baking the applied resist underlayer film forming composition to form a resist underlayer film; applying a composition to form a resist film; exposing the resist film to light; developing the resist film after exposure, with organic solvent to obtain patterned resist film; and etching the resist underlayer film by using the patterned resist film and processing the substrate using the patterned resist underlayer film; wherein | 12-25-2014 |
Patent application number | Description | Published |
20090016149 | MATERIAL MOISTURE CONTENT ADJUSTMENT METHOD - When making moisture content adjustment by adding liquid such as water to a raw material such as pulverulent material including bentonite, uniform mixing of the liquid such as water with the raw material is given with relatively simple facilities, moisture content adjustment of a large quantity of raw materials is attainable, and besides, a material having satisfactory performances such as impermeability is obtainable through uniform moisture content adjustment. Within a mixing tank ( | 01-15-2009 |
20090252881 | METHOD OF SPRAY APPLICATION, AND SPRAY APPARATUS, FOR BENTONITE MATERIAL - The present invention provides a spray method and spray apparatus for bentonite-based material that allow forming a bentonite layer of high dry density. A spray apparatus | 10-08-2009 |
20090327599 | VIRTUAL TAPE DEVICE, DATA BACKUP METHOD, AND RECORDING MEDIUM - To provide a virtual tape device to reduce power consumption by utilizing a disk array device conforming to MAID. Two or more disk devices are divided into an information managing disk group whose power is kept on at all times and to two or more recording disk groups whose power is turned on/off as necessary when managing data. The virtual tape device includes: a volume information managing part which manages positions of virtual tapes allotted to storage areas of the recording disk groups; and a data managing part which rearranges, in the recording disk group whose power is on, the virtual tape for storing the data to the recording disk group whose power is off based on writing/reading information stored in the information managing disk group and positional information of the virtual tapes, and executes a control to write backup data to the recording disk group whose power is on. | 12-31-2009 |
20120099695 | FUEL GUIDE PIN, FUEL GUIDE PIN ATTACHMENT METHOD, CORE PLATE, AND NUCLEAR REACTOR - A fuel guide pin to be fixed to a core plate includes a shrink fit portion | 04-26-2012 |
20120181788 | JOINT STRUCTURE - In a joint structure, a tube member having a polygonal cross-section can be joined to a flange surface by full penetration welding with good strength margin, without imparting unreasonable force to the weld portion. The joint structure comprises a polygonal cylindrical lower guide tube joined by butt welding to a surface of a middle flange having a through-hole of the same shape as the lower guide tube, wherein at the end of the lower guide tube, within the linear portions that constitute each of the sides of the lower guide tube, there exists a weld portion welded to the surface in at least one location and an unwelded portion located separately from the weld portion, and a level difference at least as large as a distance equivalent to the weld shrinkage of the weld portion is provided between the end positions of the weld portion of the unwelded portion. | 07-19-2012 |
20140095507 | LIBRARY APPARATUS - A library apparatus according to an aspect of the present invention includes a plurality of magazines each including medium slots in which corresponding removable storage media are stored, and a magazine ID for identifying itself; at least one magazine slot each of which, at a time when one of the magazines has been loaded into itself, allocates physical slot numbers to the magazine; an ID reading unit; a logical library configuration information table including magazine presence or absence information which indicates whether or not any of the magazines is loaded in each of the at least one magazine slot; and a logical library management unit which updates the magazine presence or absence information on the basis of information indicating which of the at least one magazine slot the relevant magazine has been loaded into, and the magazine ID of the relevant magazine. | 04-03-2014 |