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Makoto Muramatsu

Makoto Muramatsu, Shizuoka JP

Patent application numberDescriptionPublished
20090104371FILM FORMING COMPOSITION, METHOD FOR PRODUCING FILM, FILM, AND INSULATING FILM - A film forming composition is provided that includes (A) a radical polymerization initiator, and (B-1) a compound represented by Formula (1) below and/or a polymer polymerized using at least a compound represented by Formula (1) below, and/or (B-2) a compound represented by Formula (2) below and/or a polymer polymerized using at least a compound represented by Formula (2) below04-23-2009
20100040316SEALED ROLLIING BEARING - The object is to provide a sealed rolling bearing which has high sealability sufficient to substantially completely prevent entry of muddy water.02-18-2010
20100158424CREEP-FREE ROLLING BEARING - Fitting resistance accompanied by press-fitting of a creep-resistant rolling bearing into a housing is reduced to prevent cutting of a resin band. A projection (06-24-2010
20110002568CAGE FOR BALL BEARING, BALL BEARING WITH THE CAGE AND METHOD OF MANUFACTURING THE CAGE - A snap cage (01-06-2011

Patent applications by Makoto Muramatsu, Shizuoka JP

Makoto Muramatsu, Nirasaki City JP

Patent application numberDescriptionPublished
20090220898PATTERN FORMING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE SAME - The pattern forming method includes forming a catalyst film on a base layer having an uneven surface, wherein the catalyst layer is formed along the uneven surface of the base layer; forming a coating film by coating a fluid material on the catalyst film; forming an insoluble layer which is insoluble in a solvent in the coating film by reacting the coating film along the catalyst film; and maintaining the insoluble layer by removing an unreacted portion of the coating film by using the solvent.09-03-2009

Makoto Muramatsu, Haibara-Gun JP

Patent application numberDescriptionPublished
20080213602ANTIREFLECTION FILM FORMING COMPOSITION, ANITREFLECTION FILM AND OPTICAL DEVICE - An antireflection film forming composition, includes: a polymerized product of Compound (I) having m number of RSi(O09-04-2008
20080214761INSULATING FILM FORMING COMPOSITION - An insulating film forming composition, includes: a polymerized substance obtained by dissolving a cage-type silsesquioxane compound having two or more unsaturated groups as substituents in an organic solvent to give a concentration of 12 mass % or less, and polymerizing the cage-type silsesquioxane compound in presence of a polymerization initiator, wherein the polymerized substance obtained by reacting the cage-type silsesquioxane compound having two or more unsaturated groups as substituents totally amounts to 70 mass % or greater of a solid component contained in the insulating film forming composition.09-04-2008
20080217746INSULATING FILM - An insulating film for semiconductor devices is obtained by curing, on a substrate, a high molecular compound obtained by polymerizing a cage-type silsesquioxane compound having two or more unsaturated groups as substituents and having a cyclic siloxane structure, wherein the structure of the cage-type silsesquioxane compound is not broken by curing, and the breakage of the cage structure can be detected by observing a peak at approximately 610 cm09-11-2008
20090221778FILM - A file is formed by coating a substrate with a film-forming composition including a compound having an alicyclic hydrocarbon structure and irradiating the coated composition with microwaves having a frequency of 5.8 GHz. An insulating film is formed by irradiating a film including a compound having a siloxane structure with microwave having a frequency of 5.8 GHz. These films possess excellent film properties such as dielectric constant and mechanical strength.09-03-2009

Makoto Muramatsu, Nirasaki-Shi JP

Patent application numberDescriptionPublished
20090053904SUBSTRATE PROCESSING METHOD AND COMPUTER STORAGE MEDIUM - In the present invention, a coating solution containing polysilazane is applied to a substrate to form a coating film. Thereafter, an ultraviolet ray is applied to the coating film formed on the substrate to cut a molecular bond of polysilazane in the coating film. Then, the coating film in which the molecular bond of polysilazane has been cut is oxidized while the coating film is being heated. Then, the oxidized coating film is baked at a baking temperature equal to or higher than a heating temperature when the coating film is oxidized.02-26-2009