Patent application number | Description | Published |
20090250771 | Mosfet and production method of semiconductor device - To provide a MOSFET which is increased in substrate bias effect γ without increasing parasitic capacitance and junction leak current, the MOSFET includes: a gate electrode ( | 10-08-2009 |
20090321849 | SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT, AND SEMICONDUCTOR MANUFACTURING METHOD - A semiconductor circuit has a plurality of MISFETs formed with channel films comprised of semiconductor layers on an insulation film. Channel film thicknesses of each MISFET are different. A correlation relationship is fulfilled where concentration per unit area of impurity contained in the channel films becomes larger for MISFETs of a thicker channel film thickness. As a result, it is possible to suppress deviation of threshold voltage caused by changes in channel film thickness. In this event, designed values for the channel film thicknesses of the plurality of MISFETs are preferably the same, and the difference in channel film thickness of each MISFET may depend on statistical variation from the designed values. The concentration of the impurity per unit area is proportional to the channel film thickness, or is a function that is convex downwards with respect to the channel film thickness. | 12-31-2009 |
20130082231 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE - A semiconductor device includes multilayer interconnects and two variable resistance elements ( | 04-04-2013 |
20130092895 | SEMICONDUCTOR DEVICE AND OPERATION METHOD FOR SAME - A semiconductor device includes a first switching element, a second switching element, and at least one third switching element; wherein the third switching element includes a first terminal and a second terminal, wherein each of the first switching element and the second switching element includes an ion conductor, a first electrode which is disposed so as to have contact with the ion conductor and supplies metal ions to the ion conductor, and a second electrode which is disposed so as to have contact with the ion conductor and is less susceptible to ionization than the first electrode; and wherein
| 04-18-2013 |
20130181180 | SEMICONDUCTOR DEVICE - A semiconductor device according to the present invention includes: an unit element which includes a first switch and a second switch, wherein each of the first switch and the second switch includes an electrical resistance changing layer whose state of electrical resistance is changed according to a polarity of an applied voltage, and each of the first switch and the second switch has two electrodes, and wherein one electrode of the first switch and one electrode of the second switch are connected each other to form a common node, and the other electrode of the first switch forms a first node, and the other electrode of the second switch forms a second node; a first wiring which is connected with the first node and forms a signal transmission line; and a second wiring which is connected with the second node and is connected with the first wiring through the unit element. | 07-18-2013 |
20150048680 | SEMICONDUCTOR DEVICE, POWER SUPPLY CONTROL METHOD OF SEMICONDUCTOR DEVICE, AND SENSOR NODE - A semiconductor device includes a current control unit whose conductance is variable and a control unit configured to control the conductance of the current control unit. The current control unit is connected to a direct current power source in parallel with a load for the direct current power source, through a capacitor. The control unit sets the current control unit to a first conductance when the direct current power source and the load are not in a conduction state, and sets the current control unit to a second conductance larger than the first conductance when the direct current power source and the load are in the conduction state. | 02-19-2015 |
20150103583 | VARIABLE RESISTANCE ELEMENT, SEMICONDUCTOR DEVICE HAVING VARIABLE RESISTANCE ELEMENT, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND PROGRAMMING METHOD USING VARIABLE RESISTANCE ELEMENT - This variable resistance element is provided with a variable resistance film, a first electrode, which is disposed in contact with one surface of the variable resistance film, and a second electrode, which is disposed in contact with the other surface of the variable resistance film. The first and the second electrodes have corner portions, respectively, and the distance between the corner portions of the first and the second electrodes is set equal to the shortest distance between the first and the second electrodes. Furthermore, the variable resistance element has a third electrode, which is disposed on the one surface of the variable resistance film. | 04-16-2015 |
20150131358 | SEMICONDUCTOR DEVICE AND PROGRAMING METHOD - This semiconductor device is provided with: a variable resistance first switch ( | 05-14-2015 |