| Patent application number | Description | Published |
|---|
| 20090315432 | METAL OXIDE, PIEZOELECTRIC MATERIAL AND PIEZOELECTRIC ELEMENT - Provided are a piezoelectric material without using lead or an alkali metal, the piezoelectric material having a stable crystal structure in a wide temperature range, high insulation property, and high piezoelectric property, and a piezoelectric element using the piezoelectric material, in which the piezoelectric material is made of a metal oxide having a tetragonal crystal structure and expressed by Ba(Si | 12-24-2009 |
| 20100025617 | METAL OXIDE - Provided is a piezoelectric material excellent in piezoelectricity. The piezoelectric material includes a perovskite-type complex oxide represented by the following General Formula (1). | 02-04-2010 |
| 20100040928 | POLYMER ELECTROLYTE MEMBRANE AND METHOD FOR PRODUCING POLYMER ELECTROLYTE MEMBRANE - The present invention can provide a polymer electrolyte membrane having power generation characteristics with a high output and long life and a polymer electrolyte fuel cell using the same. The present invention provides a polymer electrolyte membrane having a porous polymer film and a proton conducting component present in a hole of the porous polymer film, characterized in that the proton conducting component has a compound having a proton conducting group and a bicyclo ring structure. | 02-18-2010 |
| 20100208412 | FERROELECTRIC MATERIAL, METHOD OF PRODUCING FERROELECTRIC MATERIAL, AND FERROELECTRIC DEVICE - Provided are a ferroelectric material having good ferroelectricity and good insulation property, and a ferroelectric device using the ferroelectric material. In the present invention, the ferroelectric material includes a metal oxide having a perovskite-type crystal structure, in which: the metal oxide contains bismuth ferrite whose iron is substituted by manganese, and at least one of a copper oxide and a nickel oxide; the bismuth ferrite is substituted by manganese at a substitution ratio of 0.5 at. % or more to 20 at. % or less with respect to a total amount of iron and manganese; and at least one of the copper oxide and the nickel oxide is added in an amount of 0.5 mol % or more to 20 mol % or less with respect to the bismuth ferrite whose iron is substituted by manganese. | 08-19-2010 |
| 20100231095 | PIEZOELECTRIC MATERIAL, PIEZOELECTRIC DEVICE, AND METHOD OF PRODUCING THE PIEZOELECTRIC DEVICE - Provided are a bismuth-based piezoelectric material whose insulation property is improved while its performance as a piezoelectric body is not impaired and a piezoelectric device using the piezoelectric material. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1): | 09-16-2010 |
| 20110079883 | FERROELECTRIC THIN FILM - Provided is a ferroelectric thin film formed on a substrate and having an amount of remanent polarization increased in its entirety. The ferroelectric thin film contains a perovskite-type metal oxide formed on a substrate, the ferroelectric thin film containing a column group formed of multiple columns each formed of a spinel-type metal oxide, in which the column group is in a state of standing in a direction perpendicular to a surface of the substrate, or in a state of slanting at a slant angle in a range of −10° or more to +10° or less with respect to the perpendicular direction. | 04-07-2011 |
| 20110128327 | PIEZOELECTRIC CERAMIC, METHOD FOR MAKING THE SAME, PIEZOELECTRIC ELEMENT, LIQUID DISCHARGE HEAD, AND ULTRASONIC MOTOR - A piezoelectric ceramic that includes barium titanate and 0.04 mass % or more and 0.20 mass % or less manganese relative to barium titanate. The piezoelectric ceramic is composed of crystal grains. The crystal grains include crystal grains A having an equivalent circular diameter of 30 μm or more and 300 μm or less and crystal grains B having an equivalent circular diameter of 0.5 μm or more and 3 μm or less. The crystal grains A and the crystal grains B individually form aggregates and the aggregates of the crystal grains A and the aggregates of the crystal grains B form a sea-island structure. | 06-02-2011 |
| 20110193451 | MANUFACTURING METHOD FOR PREFERENTIALLY-ORIENTED OXIDE CERAMICS, PREFERENTIALLY-ORIENTED OXIDE CERAMICS, PIEZOELECTRIC ELEMENT, LIQUID DISCHARGE HEAD, ULTRASONIC MOTOR, AND DUST REMOVING DEVICE - Provided is a manufacturing method for preferentially-oriented oxide ceramics having a high degree of crystal orientation. The manufacturing method includes: obtaining slurry containing an oxide crystal B having magnetic anisotropy; applying a magnetic field to the oxide crystal B, and obtaining a compact of the oxide crystal B; and subjecting the compact to oxidation treatment to obtain preferentially-oriented oxide ceramics including a compact of an oxide crystal C having a crystal system that is different from a crystal system of one of a part and a whole of the oxide crystal B. By (1) reacting raw materials, (2) reducing the oxide crystal A, or (3) keeping the oxide crystal A at high temperature and quenching the oxide crystal A, the oxide crystal B is obtained to be used in the slurry. | 08-11-2011 |
