Patent application number | Description | Published |
20080210959 | Light emitting apparatus - In order to provide light emitting devices which have simple constructions and thus can be fabricated easily, and can stably provide high light emission efficiencies for a long time period, a light emitting device includes an n-type nitride semiconductor layer at a first main surface side of a nitride semiconductor substrate, a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at the first main surface side and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer at the first main surface side. The nitride semiconductor substrate has a resistivity of 0.5 Ω·cm or less and the p-type nitride semiconductor layer side is down-mounted so that light is emitted from the second main surface of the nitride semiconductor substrate at the opposite side from the first main surface. | 09-04-2008 |
20090189190 | High Electron Mobility Transistor, Field-Effect Transistor, Epitaxial Substrate, Method of Manufacturing Epitaxial Substrate, and Method of Manufacturing Group III Nitride Transistor - Affords high electron mobility transistors having a high-purity channel layer and a high-resistance buffer layer. A high electron mobility transistor | 07-30-2009 |
20090194796 | Vertical Gallium Nitride Semiconductor Device and Epitaxial Substrate - Affords epitaxial substrates for vertical gallium nitride semiconductor devices that have a structure in which a gallium nitride film of n-type having a desired low carrier concentration can be provided on a gallium nitride substrate of n type. A gallium nitride epitaxial film ( | 08-06-2009 |
20100207138 | III Nitride Semiconductor Crystal, III Nitride Semiconductor Device, and Light Emitting Device - Group III nitride semiconductor crystals of a size appropriate for semiconductor devices and methods for manufacturing the same, Group III nitride semiconductor devices and methods for manufacturing the same, and light-emitting appliances. A method of manufacturing a Group III nitride semiconductor crystal includes a process of growing at least one Group III nitride semiconductor crystal substrate on a starting substrate, a process of growing at least one Group III nitride semiconductor crystal layer on the Group III nitride semiconductor crystal substrate, and a process of separating a Group III nitride semiconductor crystal, constituted by the Group III nitride semiconductor crystal substrate and the Group III nitride semiconductor crystal layer, from the starting substrate, and is characterized in that the Group III nitride semiconductor crystal is 10 μm or more but 600 μm or less in thickness, and is 0.2 mm or more but 50 mm or less in width. | 08-19-2010 |
20100230723 | High Electron Mobility Transistor, Field-Effect Transistor, and Epitaxial Substrate - Affords high electron mobility transistors having a high-purity channel layer and a high-resistance buffer layer. A high electron mobility transistor ( | 09-16-2010 |
20110156050 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - The semiconductor device includes a GaN-based layered body having an opening and including an n-type drift layer and a p-type layer located on the n-type drift layer, a regrown layer including a channel and located so as to cover the opening, and a gate electrode located on the regrown layer and formed along the regrown layer, wherein the opening reaches the n-type drift layer, and an edge of the gate electrode is not located outside a region of the p-type layer when viewed in plan. | 06-30-2011 |
20110223749 | METHOD OF FORMING NITRIDE SEMICONDUCTOR EPITAXIAL LAYER AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE - The present method of forming a nitride semiconductor epitaxial layer includes the steps of growing at least one layer of nitride semiconductor epitaxial layer on a nitride semiconductor substrate having a dislocation density lower than or equal to 1×10 | 09-15-2011 |
20120126371 | CONDUCTIVE NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING THE SAME - A method for producing a conductive nitride semiconductor substrate circuit includes the steps of forming, on an underlying substrate, a mask including dot or stripe masking portions having a width or diameter of 10 to 100 μm and arranged at a spacing of 250 to 10,000 μm; growing a nitride semiconductor crystal on the underlying substrate by hydride vapor phase epitaxy (HVPE) at a growth temperature of 1,040° C. to 1,150° C. by supplying a group III source gas, a group V source gas, and a silicon-containing gas in a V/III ratio of 1 to 10; and removing the underlying substrate, thus forming a free-standing conductive nitride semiconductor crystal substrate having a resistivity r of 0.0015 Ωcm≦r≦0.01 Ωcm, a thickness of 100 μm or more, and a radius of bow curvature U of 3.5 m≦U≦8 m. | 05-24-2012 |
20120181548 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - There are provided a high current semiconductor device that has low on-resistance, high mobility, and good pinch-off characteristics and in which a kink phenomenon is not easily caused even if a drain voltage is increased, and a method for producing the semiconductor device. The semiconductor device of the present invention includes a GaN-based layered body | 07-19-2012 |
20120205661 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a supporting substrate, a conductive layer placed on the supporting substrate, and at least one group III nitride semiconductor layer placed on the conductive layer. Of the group III nitride semiconductor layers, a conductive-layer-neighboring group III nitride semiconductor layer has n type conductivity, dislocation density of at most 1×10 | 08-16-2012 |
20130168739 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - A vertical semiconductor device in which pinch-off characteristics and breakdown voltage characteristics can be stably improved by fixing the electric potential of a p-type GaN barrier layer with certainty is provided. The semiconductor device includes a GaN-based stacked layer having an opening, a regrown layer including a channel located so as to cover a wall surface of the opening, an n | 07-04-2013 |
20130175543 | COMPOSITE GaN SUBSTRATE, METHOD FOR MANUFACTURING COMPOSITE GaN SUBSTRATE, GROUP III NITRIDE SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR DEVICE - A composite GaN substrate of the present invention includes: a conductive GaN substrate having a specific resistance of less than 1 Ωcm; and a semi-insulative GaN layer disposed on the conductive GaN substrate, having a specific resistance of 1×10 | 07-11-2013 |
20130181226 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - There are provided a semiconductor device in which a drain leak current can be reduced in the transistor operation while high vertical breakdown voltage is achieved and a method for producing the semiconductor device. In the semiconductor device, an opening | 07-18-2013 |
20130181255 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - There is provided a vertical GaN-based semiconductor device in which the on-resistance can be decreased while the breakdown voltage characteristics are improved using a p-type GaN barrier layer. The semiconductor device includes a regrown layer | 07-18-2013 |
20130221434 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - It is an object to improve the breakdown voltage characteristics of a vertical semiconductor device having an opening and including a channel formed of two-dimensional electron gas in the opening. The vertical semiconductor device includes a GaN-based stacked layer | 08-29-2013 |
20130234156 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - It is an object to improve the breakdown voltage characteristics of a vertical semiconductor device having an opening and including a channel formed of two-dimensional electron gas in the opening. A GaN-based stacked layer | 09-12-2013 |
20130240900 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - There is provided a semiconductor device or the like which includes a channel and a gate electrode in an opening and in which electric field concentration near a bottom portion of the opening can be reduced. The semiconductor device includes n | 09-19-2013 |
20130248876 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - In a vertical semiconductor device including a channel in an opening, a semiconductor device whose high-frequency characteristics can be improved and a method for producing the semiconductor device are provided. The semiconductor device includes n-type GaN-based drift layer | 09-26-2013 |
20130316507 | METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR ELEMENT - A method for manufacturing a heterojunction field effect transistor | 11-28-2013 |
20130341633 | Semiconductor Device - Provided is a semiconductor device comprising: a GaN crystal substrate defining a principal, (0001) Ga face and defining a matrix, being a majority, polarity-determining domain of the GaN crystal, and inversion domains, being domains in which the polarity in the GaN crystal's [0001] direction is inverted with respect to the matrix, the GaN substrate having a ratio S | 12-26-2013 |
20140004668 | METHOD FOR MANUFACTURING NITRIDE ELECTRONIC DEVICES | 01-02-2014 |
20140110758 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - The semiconductor device is formed in the form of a GaN-based stacked layer including an n-type drift layer | 04-24-2014 |
20140203329 | NITRIDE ELECTRONIC DEVICE AND METHOD FOR FABRICATING NITRIDE ELECTRONIC DEVICE - Provided is a nitride electronic device having a structure that allows the reduction of leakage by preventing the carrier concentration from increasing in a channel layer. An inclined surface and a primary surface of a semiconductor stack extend along first and second reference planes R | 07-24-2014 |