| Patent application number | Description | Published |
|---|
| 20080210959 | Light emitting apparatus - In order to provide light emitting devices which have simple constructions and thus can be fabricated easily, and can stably provide high light emission efficiencies for a long time period, a light emitting device includes an n-type nitride semiconductor layer at a first main surface side of a nitride semiconductor substrate, a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at the first main surface side and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer at the first main surface side. The nitride semiconductor substrate has a resistivity of 0.5 Ω·cm or less and the p-type nitride semiconductor layer side is down-mounted so that light is emitted from the second main surface of the nitride semiconductor substrate at the opposite side from the first main surface. | 09-04-2008 |
| 20090189190 | High Electron Mobility Transistor, Field-Effect Transistor, Epitaxial Substrate, Method of Manufacturing Epitaxial Substrate, and Method of Manufacturing Group III Nitride Transistor - Affords high electron mobility transistors having a high-purity channel layer and a high-resistance buffer layer. A high electron mobility transistor | 07-30-2009 |
| 20090194796 | Vertical Gallium Nitride Semiconductor Device and Epitaxial Substrate - Affords epitaxial substrates for vertical gallium nitride semiconductor devices that have a structure in which a gallium nitride film of n-type having a desired low carrier concentration can be provided on a gallium nitride substrate of n type. A gallium nitride epitaxial film ( | 08-06-2009 |
| 20100207138 | III Nitride Semiconductor Crystal, III Nitride Semiconductor Device, and Light Emitting Device - Group III nitride semiconductor crystals of a size appropriate for semiconductor devices and methods for manufacturing the same, Group III nitride semiconductor devices and methods for manufacturing the same, and light-emitting appliances. A method of manufacturing a Group III nitride semiconductor crystal includes a process of growing at least one Group III nitride semiconductor crystal substrate on a starting substrate, a process of growing at least one Group III nitride semiconductor crystal layer on the Group III nitride semiconductor crystal substrate, and a process of separating a Group III nitride semiconductor crystal, constituted by the Group III nitride semiconductor crystal substrate and the Group III nitride semiconductor crystal layer, from the starting substrate, and is characterized in that the Group III nitride semiconductor crystal is 10 μm or more but 600 μm or less in thickness, and is 0.2 mm or more but 50 mm or less in width. | 08-19-2010 |
| 20100230723 | High Electron Mobility Transistor, Field-Effect Transistor, and Epitaxial Substrate - Affords high electron mobility transistors having a high-purity channel layer and a high-resistance buffer layer. A high electron mobility transistor ( | 09-16-2010 |
| 20110156050 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - The semiconductor device includes a GaN-based layered body having an opening and including an n-type drift layer and a p-type layer located on the n-type drift layer, a regrown layer including a channel and located so as to cover the opening, and a gate electrode located on the regrown layer and formed along the regrown layer, wherein the opening reaches the n-type drift layer, and an edge of the gate electrode is not located outside a region of the p-type layer when viewed in plan. | 06-30-2011 |
| Patent application number | Description | Published |
|---|
| 20090108297 | SEMI-INSULATING NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, AND FIELD-EFFECT TRANSISTOR - A method of manufacturing a semi-insulating nitride semiconductor substrate includes the steps of forming on an underlying substrate, a mask in which dotted or striped coating portions having a width or a diameter Ds from 10 μm to 100 μm are arranged at an interval Dw from 250 μm to 2000 μm, growing a nitride semiconductor crystal on the underlying substrate with an HVPE method at a growth temperature from 1040° C. to 1150° C. by supplying a group III raw material gas and a group V raw material gas of which group V/group III ratio R | 04-30-2009 |
| 20100059761 | SCHOTTKY BARRIER DIODE - A Schottky barrier diode includes a GaN freestanding substrate having a front surface, a GaN epitaxial layer deposited on the front surface, and an insulation layer deposited on the GaN epitaxial layer at a front surface and having an opening. Furthermore, the Schottky barrier diode also includes an electrode. The electrode is configured by a Schottky electrode provided in the opening in contact with the GaN epitaxial layer, and a field plate electrode connected to the Schottky electrode and also overlapping the insulation layer. The GaN freestanding substrate has a dislocation density of at most 1×10 | 03-11-2010 |
| 20100224952 | SCHOTTKY BARRIER DIODE AND METHOD OF PRODUCING THE SAME - A Schottky barrier diode includes an epitaxial growth layer disposed on a substrate and having a mesa portion, and a Schottky electrode disposed on the mesa portion, wherein a distance between an edge of the Schottky electrode and a top surface edge of the mesa portion is 2 μm or less. Since the distance x is 2 μm or less, a leakage current is significantly decreased, a breakdown voltage is improved, and a Schottky barrier diode having excellent reverse breakdown voltage characteristics is provide. | 09-09-2010 |
| 20110133210 | SCHOTTKY BARRIER DIODE AND METHOD FOR MANUFACTURING SCHOTTKY BARRIER DIODE - A method for manufacturing a Schottky barrier diode includes the following steps. First, a GaN substrate is prepared. A GaN layer is formed on the GaN substrate. A Schottky electrode including a first layer made of Ni or Ni alloy and in contact with the GaN layer is formed. The step of forming the Schottky electrode includes a step of forming a metal layer to serve as the Schottky electrode and a step of heat treating the metal layer. A region of the GaN layer in contact with the Schottky electrode has a dislocation density of 1×10 | 06-09-2011 |
