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Makoto Kawai
Makoto Kawai, Annaka-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20110014776 | METHOD FOR PRODUCING SOI SUBSTRATE - A method for easily manufacturing a transparent SOI substrate having: a main surface with a silicon film formed thereon; and a rough main surface located on a side opposite to a side where the silicon film is formed. A method for manufacturing transparent SOI substrate, having a silicon film formed on a first main surface of the transparent insulating substrate, while a second main surface of the transparent insulating substrate, an opposite to the first main surface, is roughened. The method includes at least the steps of: roughening the first main surface with an RMS surface roughness lower than 0.7 nm and the second main surface with an RMS surface roughness higher than the surface roughness of the first main surface to prepare the transparent insulating substrate; and forming the silicon film on the first main surface of the transparent insulating substrate. | 01-20-2011 |
Makoto Kawai, Gunma-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20090221131 | Method for preparing substrate having monocrystalline film - Provided is a method for easily preparing a substrate comprising a monocrystalline film thereon or thereabove with almost no crystal defects without using a special substrate. More specifically, provided is a method for preparing a substrate comprising a monocrystalline film formed on or above a handle substrate, the method comprising: a step A of providing a donor substrate and the handle substrate; a step B of growing a monocrystalline layer on the donor substrate; a step C of implanting ions into the monocrystalline layer on the donor substrate so as to form an ion-implanted layer; a step D of bonding a surface of the monocrystalline layer of the ion-implanted donor substrate to a surface of the handle substrate; and a step E of peeling the bonded donor substrate at the ion-implanted layer existing in the monocrystalline layer so as to form the monocrystalline film on or above the handle substrate; wherein at least the steps A to E are repeated by using the handle substrate having the monocrystalline film formed thereon or thereabove as a donor substrate. | 09-03-2009 |
| 20090246935 | Method for producing soi substrate - Provided is a method for producing an SOI substrate comprising a transparent insulating substrate and a silicon film formed on a first major surface of the insulating substrate wherein a second major surface of the insulating substrate which is opposite to the major surface is roughened, the method suppressing the generation of metal impurities and particles in a simple and easy way. More specifically, provided is a method for producing an SOI substrate comprising a transparent insulating substrate, a silicon film formed on a first major surface of the transparent insulating substrate, and a roughened second major surface, which is opposite to the first major surface, the method comprising steps of: providing the transparent insulating substrate, mirror surface-processing at least the first major surface of the transparent insulating substrate, forming a silicon film on the first major surface of the transparent insulating substrate, and laser-processing the second major surface of the transparent insulating substrate so as to roughen the second major surface by using a laser. | 10-01-2009 |
| 20100244182 | METHOD OF MANUFACTURING LAMINATED WAFER BY HIGH TEMPERATURE LAMINATING METHOD - To provide a method of manufacturing a laminated wafer by which a strong coupling is achieved between wafers made of different materials having a large difference in thermal expansion coefficient without lowering a maximum heat treatment temperature as well as in which cracks or chips of the wafer does not occur. A method of manufacturing a laminated wafer | 09-30-2010 |
Makoto Kawai, Shizuoka-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20090321253 | ELECTRODE MOUNTING STRUCTURE OF SURFACE TREATMENT APPARATUS - An electrode mounting structure of a surface treatment apparatus in which a metal electrode is disposed so as to oppose to an inner-peripheral surface of a cylinder, the electrode and the cylinder are energized in a state where treatment liquid is interposed between the electrode and the cylinder inner-peripheral surface so as to perform pre-plating or plating to the cylinder inner-peripheral surface, and the metal electrode is detachably attached to a metal electrode holder member. The structure includes a resin coupler having a threaded portion engaged with a threaded portion formed on the electrode holder member. | 12-31-2009 |
Makoto Kawai, Aichi-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20090298811 | BENZIMIDAZOLONE DERIVATIVES - This invention relates to compounds and methods for the treatment of a condition mediated by CB1 receptor activity in a mammalian subject including a human, which comprises administering to a mammal in need of such treatment a therapeutically effective amount of the compound of formula (I) or pharmaceutically acceptable salts thereof, wherein: A, B, R | 12-03-2009 |
Makoto Kawai, Chiba JP
| Patent application number | Description | Published |
|---|---|---|
| 20090112479 | PATHWAY DISPLAY METHOD, INFORMATION PROCESSING DEVICE, AND PATHWAY DISPLAY PROGRAM PRODUCT - A pathway display method in an information processing device processing information includes a pathway information acquiring step (S | 04-30-2009 |
Makoto Kawai, Osaka JP
| Patent application number | Description | Published |
|---|---|---|
| 20120022255 | SUBSTITUTED 3-HYDROXY-4-PYRIDONE DERIVATIVE - This invention provides compounds having antiviral activities especially inhibiting activity for influenza virus, more preferably provides substituted 3-hydroxy-4-pyridone derivatives having cap-dependent endonuclease inhibitory activity. | 01-26-2012 |