Patent application number | Description | Published |
20120032578 | LIGHT EMITTING APPARATUS AND METHOD FOR MANUFACTURING THEREOF - A light emitting apparatus includes a light emitting device emitting primary light and a wavelength conversion unit absorbing a part of the primary light to emit secondary light. The wavelength conversion unit includes a first wavelength conversion unit containing at least a nanocrystalline phosphor and a second wavelength conversion unit containing a rare-earth-activated phosphor or a transition-metal-element-activated phosphor. In the light emitting device, the first wavelength conversion unit and the second wavelength conversion unit are closely stacked in order. | 02-09-2012 |
20120056134 | PHOSPHOR - A phosphor includes semiconductor nanoparticles formed of compound semiconductor, and conductive transparent compounds. The semiconductor nanoparticles may be dispersed in or on the conductive transparent compounds. The resistivity of the conductive transparent compounds is preferably less than or equal to 10 Ωm. | 03-08-2012 |
20120097228 | SOLAR CELL - A solar cell of the present invention comprises a p-type semiconductor layer, an n-type semiconductor layer, and a superlattice semiconductor layer interposed between the p-type semiconductor layer and the n-type semiconductor layer, wherein the superlattice semiconductor layer has a superlattice structure in which barrier layers and quantum dot layers comprising quantum dots are stacked alternately and repeatedly, and is formed so that the bandgaps of the quantum dots are gradually widened with increasing distance from a side of the p-type semiconductor layer and decreasing distance to a side of the n-type semiconductor layer. | 04-26-2012 |
20120160312 | SOLAR CELL - A solar cell of the present invention comprises a p-type semiconductor layer, an n-type semiconductor layer and a superlattice semiconductor layer sandwiched between the p-type semiconductor layer and the n-type semiconductor layer, wherein the superlattice semiconductor layer has a superlattice structure in which barrier layers and quantum layers are stacked alternately and repeatedly, and has two or more intermediate energy levels where electrons optically excited from a valence band of the quantum layers or the barrier layers stay for a constant time, the intermediate energy levels being located between a top of the valence band of the barrier layers and a bottom of a conduction band of the barrier layers, and can achieve a high incident photon-to-current conversion efficiency. | 06-28-2012 |
20120285537 | SOLAR CELL - A solar cell comprises a p-type semiconductor layer, an n-type semiconductor layer, and a superlattice semiconductor layer interposed between the p-type semiconductor layer and the n-type semiconductor layer, wherein the superlattice semiconductor layer has a stacked structure in which quantum layers and barrier layers are stacked alternately and repeatedly, wherein the stacked structure is formed whereby a miniband is formed by a quantum level of the quantum layers on the side of a conduction band, wherein an energy level at a bottom of the miniband is lower than an energy level at a bottom of the conduction band of the barrier layers, and an energy level at a top of the miniband is higher than an energy level, which is lower than the energy level at the bottom of the conduction band of the barrier layers by an amount twice as much as thermal energy at room temperature. | 11-15-2012 |
20130002124 | LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING THE SAME - A light emitting device includes a light emitting element that emits primary light and a wavelength conversion unit that absorbs part of the primary light and emits secondary light. In the light emitting device, the wavelength conversion unit includes a plurality of types of phosphors that emit secondary light having wavelengths different from each other, and at least one of the phosphors is a covered phosphor covered with a surface film that reflects secondary light emitted from a phosphor other than the covered phosphor. | 01-03-2013 |
20130193837 | PHOSPHOR PLATE, LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING PHOSPHOR PLATE - A phosphor plate includes a base material, a phosphor and a scattering material. The phosphor absorbs primary light emitted by a light emitting element and emits secondary light having a wavelength longer than a wavelength of the primary light. The scattering material scatters the primary light and the secondary light. An average distance from one surface of the phosphor plate to the phosphor is longer than an average distance from the one surface to the scattering material. With such a configuration, there are provided a phosphor plate having the enhanced extraction efficiency of light emitted by a phosphor, a light emitting device including the phosphor plate, and a method for manufacturing the phosphor plate. | 08-01-2013 |
20130228812 | LIGHT EMITTING DEVICE AND BACKLIGHT SYSTEM USING THE SAME - A light emitting device is provided that includes a light emitting element emitting primary light, and a wavelength conversion portion provided on the light emitting element, absorbing a part of the primary light and emitting secondary light, in which the wavelength conversion portion is made of a plurality of resin layers including at least a first wavelength conversion portion made of a resin layer containing a rare earth-activated phosphor or a transition metal element-activated phosphor, and a second wavelength conversion portion made of a resin layer containing a nanocrystalline phosphor. The first wavelength conversion portion is disposed closer to the light emitting element than the second wavelength conversion portion is. | 09-05-2013 |
20130249388 | LIGHT SOURCE, LIGHT-EMITTING DEVICE, LIGHT SOURCE FOR BACKLIGHT, DISPLAY DEVICE, AND METHOD FOR PRODUCING LIGHT SOURCE - A fluorescent material-sealed sheet includes a plurality of fluorescent sections, an upper sealing section, and a lower sealing section, the plurality of fluorescent sections being sealed by the upper sealing section and the lower sealing section. | 09-26-2013 |
20140326302 | SOLAR CELL - An solar cell of the present invention includes a p-type semiconductor layer, an n-type semiconductor layer, and a superlattice semiconductor layer interposed between the p-type semiconductor layer and the n-type semiconductor layer, in which the superlattice semiconductor layer has a superlattice structure in which barrier layers and quantum dot layers each including a plurality of quantum dots are stacked alternately and repeatedly, the superlattice semiconductor layer contains an n-type dopant and has at least two intermediate energy levels at which electrons photoexcited from the valence band of the quantum dots or the barrier layers can be present for a certain period of time, each of the intermediate energy levels is located between the top of the valence band of the barrier layers and the bottom of the conduction band of the barrier layers, each of the intermediate energy levels is formed from one or a plurality of quantum levels of the quantum dots, and the superlattice semiconductor layer contains an activated n-type dopant. | 11-06-2014 |