| Patent application number | Description | Published |
|---|
| 20080282971 | NITRIDE SINGLE CRYSTAL MANUFACTURING APPARATUS - The apparatus has a crucible for storing a solution; an inner container | 11-20-2008 |
| 20090000538 | SINGLE CRYSTAL GROWING METHOD - In a method of growing a single crystal by melting a raw material within a vessel under a nitrogenous and non-oxidizing atmosphere, the vessel is oscillated and the melted raw material is contacted with an agitation medium made of a solid unreactive with the melted raw material. | 01-01-2009 |
| 20090000542 | APPARATUS FOR PRODUCING NITRIDE SINGLE CRYSTAL - It is disclosed an apparatus for growing a nitride single crystal using a flux containing an easily oxidizable substance. The apparatus has a crucible for storing the flux; a pressure vessel for storing the crucible and charging an atmosphere containing at least nitrogen gas; furnace materials disposed within the pressure vessel and out of the crucible; heaters attached to the furnace material; and alkali-resistant and heat-resistant metallic layers covering the furnace material. | 01-01-2009 |
| 20090013924 | PROCESS AND APPARATUS FOR PRODUCING NITRIDE SINGLE CRYSTAL - A nitride single crystal is produced using a growth solution | 01-15-2009 |
| 20090038539 | PROCESS FOR PRODUCING SINGLE CRYSTAL - A raw material mixture containing an easily oxidizable material is weighed. The raw material mixture is melted and then solidified within a reaction vessel | 02-12-2009 |
| 20090074963 | OXIDE FILMS, A METHOD OF PRODUCING THE SAME AND STRUCTURES HAVING THE SAME - An object of the present invention is to produce an oxide film having good surface morphology and crystal quality, by a metal organic chemical vapor deposition using two or more raw material gases of metal organic compounds and oxygen gas. It is used a film forming system having a first supply hole | 03-19-2009 |
| 20090078193 | PROCESS FOR PRODUCING A NITRIDE SINGLE CRYSTAL AND APPARATUS THEREFOR - A growth apparatus is used having a plurality of crucibles | 03-26-2009 |
| 20090293805 | Melt composition for gallium nitride single crystal growth and method for growing gallium nitride single crystal - It is provided a melt composition for growing a gallium nitride single crystal by flux method. The melt composition contains gallium, sodium and barium, and a content of barium is 0.05 to 0.3 mol % with respect to 100 mol % of sodium. | 12-03-2009 |
| 20100012020 | METHOD FOR MANUFACTURING NITRIDE SINGLE CRYSTAL - A nitride single crystal is produced on a seed crystal substrate | 01-21-2010 |
| 20100247418 | Method for producing group III nitride semiconductor - An object of the present invention is to effectively add Ge in the production of GaN through the Na flux method. In a crucible, a seed crystal substrate is placed such that one end of the substrate remains on the support base, whereby the seed crystal substrate remains tilted with respect to the bottom surface of the crucible, and gallium solid and germanium solid are placed in the space between the seed crystal substrate and the bottom surface of the crucible. Then, sodium solid is placed on the seed crystal substrate. Through employment of this arrangement, when a GaN crystal is grown on the seed crystal substrate through the Na flux method, germanium is dissolved in molten gallium before formation of a sodium-germanium alloy. Thus, the GaN crystal can be effectively doped with Ge. | 09-30-2010 |
