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Makoto Inagaki

Makoto Inagaki, Kyoto JP

Patent application numberDescriptionPublished
20080231733Amplification Type Solid State Imaging Device - An amplification type solid state imaging device in use includes at least a light-receiving portion 09-25-2008
20090021620AMPLIFICATION TYPE SOLID-STATE IMAGING DEVICE - A plurality of pixels, each including a second conductivity-type photodiode portion 01-22-2009
20090021625Solid-State Imaging Device - According to the present invention, as a structure of a pixel section (01-22-2009
20090026571SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes first pixels and second pixels. Each of the first pixels and the second pixels includes a p-type diffusion layer formed in a semiconductor substrate and an n-type diffusion layer formed on the p-type diffusion layer. A first p-type implantation layer is formed on a surface side of the semiconductor substrate on the n-type diffusion layer of the first pixels. A second p-type implantation layer having a lower impurity concentration than the first p-type implantation layer or no p-type implantation layer is formed on a surface side of the semiconductor substrate on the n-type diffusion layer of the second pixels.01-29-2009
20100245642SOLID-STATE IMAGING DEVICE - A solid-state imaging device which can, in response to the problem of black-crush occurring in an image when strong light is enters the device, positively detect black-crush in a state in which a variance margin has been secured. The solid-state imaging device outputs a luminance signal in accordance with an amount of received light, and includes: a pixel circuit having a light-receiving element; a signal output circuit having a sampling transistor which outputs, from a second signal output line, a luminance signal in accordance with the amount of light received by the light-receiving element, based on an output signal from the pixel circuit; and a high-intensity judgment circuit which is coupled by the pixel circuit and a judgment input coupling capacitor, judges whether or not light entering the light-receiving element is of high intensity based on the output signal from the pixel circuit, and in the case of judging the entering light to be of high intensity, outputs a luminance signal indicating high intensity.09-30-2010
20100309355AMPLIFICATION TYPE SOLID STATE IMAGING DEVICE - An amplification type solid state imaging device in use includes at least a light-receiving portion 12-09-2010
20100309356SOLID STATE IMAGING DEVICE AND METHOD FOR DRIVING THE SAME - A solid state imaging device according to an aspect of the present invention includes: a pixel array (12-09-2010

Patent applications by Makoto Inagaki, Kyoto JP

Makoto Inagaki, Nagaokakyo JP

Patent application numberDescriptionPublished
20090295961SOLID-STATE IMAGING DEVICE DRIVING METHOD - Photosensitive cells each includes a photodiode (12-03-2009
20090322924SOLID-STATE IMAGING DEVICE DRIVING METHOD - Photosensitive cells each includes a photodiode (12-31-2009
20100157123SOLID-STATE IMAGING DEVICE WITH SPECIFIC CONTACT ARRANGEMENT - In each photosensitive cell, a photodiode 06-24-2010
20100163712SOLID-STATE IMAGING DEVICE - In each photosensitive cell, a photodiode 07-01-2010
20100165162SOLID-STATE IMAGING DEVICE - In each photosensitive cell, a photodiode 07-01-2010

Patent applications by Makoto Inagaki, Nagaokakyo JP

Makoto Inagaki, Muko-Shi JP

Patent application numberDescriptionPublished
20090072125Solid-state imaging apparatus and method for producing the same - A solid-state imaging apparatus includes a plurality of photosensitive cells, and a driving unit provided for driving the plurality of photosensitive cells. Each photosensitive cell includes a photodiode formed to be exposed on a surface of a semiconductor substrate for the purpose of accumulating signal charge obtained by subjecting incident light to photoelectric conversion, a transfer transistor for transferring signal charge accumulated by the photodiode, a floating diffusion layer for temporarily accumulating signal charge transferred by the transfer transistor, and an amplifier transistor for amplifying signal charge temporarily accumulated in the floating diffusion layer. A source/drain diffusion layer provided in the amplifier transistor is covered with a salicide layer, and the floating diffusion layer is formed to be exposed on a surface of the semiconductor substrate.03-19-2009