| Patent application number | Description | Published |
|---|
| 20080296724 | Semiconductor substrate and manufacturing method of semiconductor device - To provide a semiconductor substrate including a crystalline semiconductor layer which is suitable for practical use, even if a material different from that of the semiconductor layer is used for a supporting substrate, and a semiconductor device using the semiconductor substrate. The semiconductor substrate includes a bonding layer which forms a bonding plane, a barrier layer formed of an insulating material containing nitrogen, a relief layer which is formed of an insulating material that includes nitrogen at less than 20 at. % and hydrogen at 1 at. % to 20 at. %, and an insulating layer containing a halogen, between a supporting substrate and a single-crystal semiconductor layer. The semiconductor device includes the above-described structure at least partially, and a gate insulating layer formed by a microwave plasma CVD method using SiH | 12-04-2008 |
| 20090045401 | Semiconductor device and manufacturing method thereof - The present invention relates to a semiconductor device including a thin film transistor comprising a microcrystalline semiconductor which forms a channel formation region and includes an acceptor impurity element, and to a manufacturing method thereof. A gate electrode, a gate insulating film formed over the gate electrode, a first semiconductor layer which is formed over the gate insulating film and is formed of a microcrystalline semiconductor, a second semiconductor layer which is formed over the first semiconductor layer and includes an amorphous semiconductor, and a source region and a drain region which are formed over the second semiconductor layer are provided in the thin film transistor. A channel is formed in the first semiconductor layer when the thin film transistor is placed in an on state. | 02-19-2009 |
| 20090047758 | METHOD OF MANUFACTURING DISPLAY DEVICE - In a case of forming a bottom-gate thin film transistor, a step of forming a microcrystalline semiconductor film over a gate insulating film by a plasma CVD method, and a step of forming an amorphous semiconductor film over the microcrystalline semiconductor film are performed. In the step of forming the microcrystalline semiconductor film, the pressure in the reaction chamber is set at or below 10 | 02-19-2009 |
| 20090047759 | Method for manufacturing semiconductor device - After a gate insulating film is formed over a gate electrode, in order to improve the quality of a microcrystalline semiconductor film which is formed in an early stage of deposition, a film near an interface with the gate insulating film is formed under a first deposition condition in which a deposition rate is low but the quality of a film to be formed is high, and then, a film is further deposited under a second deposition condition in which a deposition rate is high. Then, a buffer layer is formed to be in contact with the microcrystalline semiconductor film. Further, plasma treatment with a rare gas such as argon or hydrogen plasma treatment is performed before formation of the film under the first deposition condition for removing adsorbed water on a substrate. | 02-19-2009 |
| 20090047760 | Method for manufacturing semiconductor device - Electric characteristics of a thin film transistor including a channel formation region including a microcrystalline semiconductor are improved. The thin film transistor includes a gate electrode, a gate insulating film formed over the gate electrode, a microcrystalline semiconductor layer formed over the gate insulating film, a semiconductor layer which is formed over the microcrystalline semiconductor layer and includes an amorphous semiconductor, and a source region and a drain region which are formed over the semiconductor layer. A channel is formed in the microcrystalline semiconductor layer when the thin film transistor is placed in an on state, and the microcrystalline semiconductor layer includes an impurity element for functioning as an acceptor. The microcrystalline semiconductor layer is formed by a plasma-enhanced chemical vapor deposition method. In forming the microcrystalline semiconductor layer, a process gas is excited with two or more kinds of high-frequency electric power with different frequencies. | 02-19-2009 |
| 20090047761 | Manufacturing method of semiconductor device - An object is to provide a manufacturing method of a microcrystalline semiconductor film with favorable quality over a large-area substrate. After forming a gate insulating film over a gate electrode, in order to improve quality of a microcrystalline semiconductor film formed in an initial stage, glow discharge plasma is generated by supplying high-frequency powers with different frequencies, and a lower part of the film near an interface with the gate insulating film is formed under a first film formation condition, which is low in film formation rate but results in a good quality film. Thereafter, an upper part of the film is deposited under a second film formation condition with higher film formation rate, and further, a buffer layer is stacked on the microcrystalline semiconductor film. | 02-19-2009 |
| 20090072237 | METHOD FOR MANUFACTURING THIN FILM TRANSISTOR AND DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR - To provide a method for manufacturing a thin film transistor with excellent electric characteristics and high reliability and a display device including the thin film transistor. A gate insulating film is formed over a gate electrode, crystal nuclei is formed over the gate insulating film using fluorosilane and silane, and crystal growth is generated using the crystal nuclei as nuclei to form a microcrystalline semiconductor film, so that crystallinity at an interface between the gate insulating film and the microcrystalline semiconductor film is improved. Next, a thin film transistor is manufactured using the microcrystalline semiconductor film having crystallinity improved at the interface between the gate insulating film and the microcrystalline semiconductor film as a channel formation region. | 03-19-2009 |
| 20090081845 | MANUFACTURING METHOD OF SUBSTRATE PROVIDED WITH SEMICONDUCTOR FILMS - A plurality of rectangular single crystal semiconductor substrates are prepared. Each of the single crystal semiconductor substrates is doped with hydrogen ions and a damaged region is formed at a desired depth, and a bonding layer is formed on a surface thereof. The plurality of single crystal substrates with the damaged regions formed therein and the bonding layers formed thereover are arranged on a tray. Depression portions for holding the single crystal semiconductor substrates are formed in the tray. With the single crystal semiconductor substrates arranged on the tray, the plurality of single crystal semiconductor substrates with the damaged regions formed therein and the bonding layers formed thereover are bonded to a base substrate. By performing heat treatment and dividing the single crystal semiconductor substrates along the damaged regions, the plurality of single crystal semiconductor layers that are sliced are formed over the base substrate. | 03-26-2009 |
| 20090137087 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, FILM DEPOSITION METHOD, AND FILM DEPOSITION APPARATUS - An object is to provide a film deposition apparatus in which the amount of leakage from the outside of the chamber to the inside of the chamber is reduced. Even if leakage occurs from the outside of the chamber to the inside of the chamber, oxygen and nitrogen included in an atmosphere that surrounds the outer wall of the chamber are reduced as much as possible and the atmosphere is filled with a noble gas or hydrogen, whereby the inside of the chamber is kept cleaner at 1/100 or less, preferably, 1/1000 or less of oxygen concentration and nitrogen concentration than those in the air. Since the space with high airtightness is provided adjacent to the outside of the chamber, the chamber is covered with a bag and a high-purity argon gas is supplied to the bag. | 05-28-2009 |
| 20090160753 | DISPLAY DEVICE - When semi-amorphous TFTs are used for forming a signal line driver circuit and a pixel, a large amplitude is required for driving the pixel, and a large power supply voltage is thus needed. On the other hand, when a shift register is made up of transistors having a single conductivity, a bootstrap circuit is required, and a voltage over a power supply is applied to a specific element. Therefore, not both the driving amplitude and the reliability can be achieved with a single power supply. According to the invention, a level shifter having a single conductivity is provided to solve such a problem. | 06-25-2009 |
| 20090233425 | PLASMA PROCESSING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - By an evacuation unit including first and second turbo molecular pumps connected in series, the ultimate pressure in a reaction chamber is reduced to ultra-high vacuum. By a knife-edge-type metal-seal flange, the amount of leakage in the reaction chamber is reduced. A microcrystalline semiconductor film and an amorphous semiconductor film are stacked in the same reaction chamber where the pressure is reduced to ultra-high vacuum. By forming the amorphous semiconductor film covering the surface of the microcrystalline semiconductor film, oxidation of the microcrystalline semiconductor film is prevented. | 09-17-2009 |
| 20090267066 | PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING THE SAME - To provide a photoelectric conversion device with improved photoelectric conversion characteristics and cost competitiveness. A photoelectric conversion device including a semiconductor junction has a semiconductor layer in which a needle-like crystal is made to grow over an impurity semiconductor layer. The impurity semiconductor layer is formed of a microcrystalline semiconductor and includes an impurity imparting one conductivity type. An amorphous semiconductor layer is deposited on a microcrystalline semiconductor layer by setting the flow rate of a dilution gas (typically silane) to 1 time to 6 times the flow rate of a semiconductor source gas (typically hydrogen) at the time of deposition. Thus, a crystal with a three-dimensional shape tapered in a direction of the deposition of a film, i.e., in a direction from the microcrystalline semiconductor layer to the amorphous semiconductor layer is made to grow. | 10-29-2009 |
| 20100047998 | MANUFACTURING METHOD OF SUBSTRATE PROVIDED WITH SEMICONDUCTOR FILMS - A plurality of rectangular single crystal semiconductor substrates are prepared. Each of the single crystal semiconductor substrates is doped with hydrogen ions and a damaged region is formed at a desired depth, and a bonding layer is formed on a surface thereof. The plurality of single crystal substrates with the damaged regions formed therein and the bonding layers formed thereover are arranged on a tray. Depression portions for holding the single crystal semiconductor substrates are formed in the tray. With the single crystal semiconductor substrates arranged on the tray, the plurality of single crystal semiconductor substrates with the damaged regions formed therein and the bonding layers formed thereover are bonded to a base substrate. By performing heat treatment and dividing the single crystal semiconductor substrates along the damaged regions, the plurality of single crystal semiconductor layers that are sliced are formed over the base substrate. | 02-25-2010 |
| 20110059562 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - An object is to provide a manufacturing method of a microcrystalline semiconductor film with favorable quality over a large-area substrate. After forming a gate insulating film over a gate electrode, in order to improve quality of a microcrystalline semiconductor film formed in an initial stage, glow discharge plasma is generated by supplying high-frequency powers with different frequencies, and a lower part of the film near an interface with the gate insulating film is formed under a first film formation condition, which is low in film formation rate but results in a good quality film. Thereafter, an upper part of the film is deposited under a second film formation condition with higher film formation rate, and further, a buffer layer is stacked on the microcrystalline semiconductor film. | 03-10-2011 |
