| Patent application number | Description | Published |
|---|
| 20080268375 | Positive Resist Composition and Method for Resist Pattern Formation - A positive-working resist composition of a wide level of DOF and a method for resist pattern formation are provided. This composition is a positive-working resist composition comprising a resin component (A) which, upon action by an acid, increases alkali solubility and an acid generating agent component (B) which produces an acid upon exposure. The component (A) is a copolymer comprising n (n=an integer of 4 to 6) types of constitutional units different from each other in structure, and the proportion of each constitutional unit in the copolymer is more than 0% by mole and not more than 100/(n−1)% by mole. | 10-30-2008 |
| 20080268376 | POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING POLYMERIC COMPOUND - A fluorine-containing polymeric compound obtained by polymerizing only polymerizable monomers represented by general formula (c1-0) shown below: | 10-30-2008 |
| 20090035698 | POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD - The present invention is a positive resist composition and a resist pattern forming method including a resin component (A) which has a polymer compound (A1) having a structural units (a1) including an acetal type acid dissociable, dissolution inhibiting group, a structural unit (a2) derived from an acrylate ester having a lactone-containing polycyclic group, and a structural unit (a3) derived from an acrylate ester having a polar group-containing aliphatic hydrocarbon group, and an acid generator component (B) having an onium salt-based acid generator (B1) having a cation portion represented by a general formula (b-1) shown below | 02-05-2009 |
| 20090042132 | RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN - A resist composition for immersion lithography of the present invention includes a resin component (A) which exhibits changed alkali solubility under the action of acid; and an acid generator component (B) which generates acid on exposure, wherein the resin component (A) includes a resin (A1) containing a fluorine atom and no acid-dissociable group, and a resin (A2) containing a structural unit (a′) derived from an acrylic acid and no fluorine atom. | 02-12-2009 |
| 20090053650 | RESIST COMPOSITION FOR IMMERSION EXPOSURE AND METHOD OF FORMING RESIST PATTERN - A resist composition for immersion exposure and a method of forming a resist pattern are provided which can satisfy both of excellent resistance to an immersion medium and lithography properties. The resist composition for immersion exposure includes a resin component (A) which exhibits changed alkali solubility under action of acid and an acid-generator component (B) which generates acid upon irradiation, the resin component (A) including a resin (A1) which contains a fluorine atom and a resin (A2) which has a structural unit (a′) derived from acrylic acid and contains no fluorine atom, and the amount of the resin (A1) contained in the resin component (A) being within the range from 0.1 to 50% by weight. | 02-26-2009 |
| 20090098483 | POSITIVE RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN - A positive resist composition and method for forming a resist pattern are provided which enable a resist pattern with excellent shape to be obtained. The resist composition includes a resin component (A) which exhibits increased alkali solubility under action of acid, an acid-generator component (B) which generates acid upon irradiation and an organic solvent (S) in which the components (A) and (B) are dissolved, the resin component (A) including a copolymer (A1) containing: a structural unit (a1) having an acetal-type protected group, a structural unit (a2) derived from an acrylate ester having a lactone-containing polycyclic group, which is represented by general formula (a2-1) shown below; and a structural unit (a3) derived from an acrylate ester having a polar group-containing aliphatic hydrocarbon group: | 04-16-2009 |
| 20090117490 | POSITIVE RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN - A positive resist composition for immersion lithography of the present invention includes a resin component (A) which exhibits increased alkali solubility under the action of acid; and an acid generator component (B) which generates acid on exposure, wherein the resin component (A) includes a cyclic main chain resin (A1) containing a fluorine atom and no acid-dissociable group, and a resin (A2) containing a structural unit (a) derived from an acrylic acid and no fluorine atom. | 05-07-2009 |
| 20090269700 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A positive resist composition, including a resin component (A) which exhibits increased solubility in an alkali developing solution under action of an acid, and an acid generator component (B) which generates an acid upon exposure, wherein the component (A) includes a structural unit (a1) derived from a hydroxystyrene, and a structural unit (a2) containing an acid dissociable, dissolution inhibiting group; and the component (B) includes an acid generator (B1) composed of a compound represented by the general formula (b1) shown below: | 10-29-2009 |
| 20090269701 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A positive resist composition including a resin component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the resin component (A) including a structural unit (a0) represented by general formula (a0) (wherein R represents a hydrogen atom, a lower alkyl group of 1 to 5 carbon atoms or a halogenated lower alkyl group of 1 to 5 carbon atoms; Q represents a divalent linking group containing a nitrogen atom or an oxygen atom; R | 10-29-2009 |
| 20090317741 | COMPOUND, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - There is provided a resist composition which includes a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid, and an acid generator component (B) which generates an acid upon exposure, wherein the acid generator component (B) comprises an acid generator composed of a compound represented by the general formula (b1-2) shown below: | 12-24-2009 |
| 20090317745 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - Provided are a novel positive resist composition that includes a low molecular weight material as a base material component, and a method of forming a resist pattern using the positive resist composition. | 12-24-2009 |
| 20100081080 | POLYMER COMPOUND, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A polymer compound including a structural unit (a0) represented by general formula (a0-1) shown below: | 04-01-2010 |
| 20100266955 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the component (A) including a polymeric compound (A1) having a structural unit (a0) represented by general formula (a0-1) (wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; R | 10-21-2010 |
| 20110165512 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A resist composition including a base component (A) that exhibits changed solubility in an alkali developing solution under the action of acid, an acid-generator component (B) that generates acid upon exposure, and a nitrogen-containing organic compound (D), wherein the acid generator component (B) includes an acid generator (B1) consisting of a compound represented by general formula (b0), and the nitrogen-containing organic compound (D) includes a compound represented by general formula (d1) or general formula (d2) [wherein each of R | 07-07-2011 |
