Patent application number | Description | Published |
20080319696 | Method and Its System for Calibrating Measured Data Between Different Measuring Tools - The present invention relates to a method and its system for calibrating measured data between different measuring tools. A method of calibrating measured data between different measuring tools includes the steps of: measuring the CD average dimension and roughness of an object to be measured using a CD-SEM tool; calculating the number of the cross section measurement points required for calibration by statistically processing the roughness; measuring the cross section of the object to be measured using the cross section measuring tool to satisfy the number of the cross section measurement points, thereby calculating the CD average dimension of the cross section measurement height specified in the obtained cross section measurement result; and calculating a calibration correction value being a difference between the CD average dimension of the object and the CD average dimension of the cross section measurement height of the object. | 12-25-2008 |
20090212211 | Electron Microscope System and Method for Evaluating Film Thickness Reduction of Resist Patterns - The invention provides a system for achieving detection and measurement of film thickness reduction of a resist pattern with high throughput which can be applied to part of in-line process management. By taking into consideration the fact that film thickness reduction of the resist pattern leads to some surface roughness of the upper surface of the resist, a film thickness reduction index value is calculated by quantifying the degree of roughness of the part corresponding to the upper surface of the resist on an electron microscope image of the resist pattern which has been used in the conventional line width measurement. The amount of film thickness reduction of the resist pattern is estimated by applying the calculated index value to a database previously made for relating a film thickness reduction index value to an amount of film thickness reduction of the resist pattern. | 08-27-2009 |
20090212212 | Scanning Electron Microscope system and Method for Measuring Dimensions of Patterns Formed on Semiconductor Device By Using the System - The present invention is for providing a scanning electron microscope system adapted to output contour information fitting in with the real pattern edge end of a sample, and is arranged to generate a local projection waveform by projecting the scanning electron microscope image in the tangential direction with respect to the pattern edge at each point of the pattern edge of the scanning electron microscope image, estimate the cross-sectional shape of the pattern transferred on the sample by applying the local projection waveform generated at each point to a library, which has previously been created, correlating the cross-sectional shape with the electron beam signal waveform, obtain position coordinate of the edge end fitting in with the cross-sectional shape, and output the contour of the pattern as a range of position coordinates. | 08-27-2009 |
20090212215 | SCANNING ELECTRON MICROSCOPE AND METHOD OF MEASURING PATTERN DIMENSION USING THE SAME - In dimension measurement of semiconductor pattern by CD-SEM, the error value between dimensional measurement value and actual dimension on the pattern is much variational as it is dependent on the cross-sectional shape of the pattern, and a low level of accuracy was one time a big problem. In the present invention, a plurality of patterns, each different in shape, were prepared beforehand with AFM measurement result and patterns of the same shape measured by CD-SEM. These measurement results and dimensional errors were homologized with each other and kept in a database. For actual measurement of dimensions, most like side wall shape, and corresponding CD-SEM measurement error result are called up, and the called-up error results are used to correct CD-SME results of measurement object patterns. In this manner, it becomes possible to correct or reduce dimensional error which is dependent on cross-sectional shape of the pattern. | 08-27-2009 |
20090214103 | METHOD FOR MEASURING A PATTERN DIMENSION - In SEM image based pattern measurement using electron beam simulation, accuracy of simulation is very influential. For matching between a simulated image and an actual image, it is needed to properly model the shape and material of a target being measured and reflect them in simulated images. In the present invention, highly accurate pattern measurements are achieved by using simulated images with properly set parameters of shape and dimension having a large influence on the accuracy of matching for measurement between simulated and actual images, based on SEM images or information obtained by another measurement apparatus such as AFM. | 08-27-2009 |
20120037801 | PATTERN MEASURING APPARATUS AND COMPUTER PROGRAM - Provided are a pattern measuring apparatus and a computer program which determine whether a gap formed in a sample ( | 02-16-2012 |
20120112067 | SCANNING ELECTRON MICROSCOPE SYSTEM AND METHOD FOR MEASURING DIMENSIONS OF PATTERNS FORMED ON SEMICONDUCTOR DEVICE BY USING THE SYSTEM - The present invention is for providing a scanning electron microscope system adapted to output contour information fitting in with the real pattern edge end of a sample, and is arranged to generate a local projection waveform by projecting the scanning electron microscope image in the tangential direction with respect to the pattern edge at each point of the pattern edge of the scanning electron microscope image, estimate the cross-sectional shape of the pattern transferred on the sample by applying the local projection waveform generated at each point to a library, which has previously been created, correlating the cross-sectional shape with the electron beam signal waveform, obtain position coordinate of the edge end fitting in with the cross-sectional shape, and output the contour of the pattern as a range of position coordinates. | 05-10-2012 |
20120267529 | ELECTRON MICROSCOPE SYSTEM AND METHOD FOR EVALUATING FILM THICKNESS REDUCTION OF RESIST PATTERNS - The invention provides a system for achieving detection and measurement of film thickness reduction of a resist pattern with high throughput which can be applied to part of in-line process management. By taking into consideration the fact that film thickness reduction of the resist pattern leads to some surface roughness of the upper surface of the resist, a film thickness reduction index value is calculated by quantifying the degree of roughness of the part corresponding to the upper surface of the resist on an electron microscope image of the resist pattern which has been used in the conventional line width measurement. The amount of film thickness reduction of the resist pattern is estimated by applying the calculated index value to a database previously made for relating a film thickness reduction index value to an amount of film thickness reduction of the resist pattern. | 10-25-2012 |