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Makala
Jerome Makala, Guyancourt FR
| Patent application number | Description | Published |
|---|---|---|
| 20080203792 | Seat Assembly for a Motor Vehicle - A seat assembly for a motor vehicle includes a central support element, fixed essentially vertically in a vehicle cabin to which the seats are fitted. The seat assembly includes connector bodies arranged at one end of the support element for fixing to a part of the cabin, the connector bodies permitting a displacement of the assembly along a longitudinal axis of the vehicle. | 08-28-2008 |
Raghuveer Makala, Sunnyvale, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20110171815 | PATTERNING METHOD FOR HIGH DENSITY PILLAR STRUCTURES - A method of making a device includes forming a first photoresist layer over a sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first photoresist features insoluble to a solvent, forming a second photoresist layer over the first photoresist features, patterning the second photoresist layer to form second photoresist features, forming a spacer layer over the first and second photoresist features, etching the spacer layer to form spacer features and to expose the first and second photoresist features, forming third photoresist features between the spacer features, removing the spacer features, and patterning the sacrificial layer using the first, second and third photoresist features as a mask to form sacrificial features. | 07-14-2011 |
Raghuveer Makala, Milpitas, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20110227026 | NON-VOLATILE STORAGE WITH METAL OXIDE SWITCHING ELEMENT AND METHODS FOR FABRICATING THE SAME - Non-volatile storage elements having a reversible resistivity-switching element and techniques for fabricating the same are disclosed herein. The reversible resistivity-switching element may be formed by depositing an oxygen diffusion resistant material (e.g., heavily doped Si, W, WN) over the top electrode. A trap passivation material (e.g., fluorine, nitrogen, hydrogen, deuterium) may be incorporated into one or more of the bottom electrode, a metal oxide region, or the top electrode of the reversible resistivity-switching element. One embodiment includes a reversible resistivity-switching element having a bi-layer capping layer between the metal oxide and the top electrode. Fabricating the device may include depositing (un-reacted) titanium and depositing titanium oxide in situ without air brake. One embodiment includes incorporating titanium into the metal oxide of the reversible resistivity-switching element. The titanium might be implanted into the metal oxide while depositing the metal oxide, or after deposition of the metal oxide. Sub-plantation may be used to create a titanium region between two metal oxide regions. | 09-22-2011 |
Raghuveer S. Makala, Sunnyvale, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20100117069 | OPTIMIZED ELECTRODES FOR RE-RAM - Optimized electrodes for ReRAM memory cells and methods for forming the same are discloses. One aspect comprises forming a first electrode, forming a state change element in contact with the first electrode, treating the state change element, and forming a second electrode. Treating the state change element increases the barrier height at the interface between the second electrode and the state change element. Another aspect comprises forming a first electrode in a manner to deliberately establish a certain degree of amorphization in the first electrode, forming a state change element in contact with the first electrode. The degree of amorphization of the first electrode is either at least as great as the degree of amorphization of the state change element or no more than 5 percent less than the degree of amorphization of the state change element. | 05-13-2010 |
| 20110014771 | Method of making damascene diodes using selective etching methods - A method of making a semiconductor device includes providing an insulating layer containing a plurality of openings, forming a first conductivity type semiconductor layer in the plurality of openings, forming a second conductivity type semiconductor layer over the first conductivity type semiconductor layer in the plurality of openings, and selectively etching the second conductivity type semiconductor layer using an upper surface of the first conductivity type semiconductor layer as a stop to form a recess in the plurality of openings. | 01-20-2011 |
| 20110014779 | Method of making damascene diodes using sacrificial material - A method of making a semiconductor device includes forming a first layer comprising a seed material over an underlying layer, forming a second layer comprising a sacrificial material over the first layer, the sacrificial material being different from the seed material, patterning the first layer and the second layer into a plurality of separate features, forming an insulating filling material between the plurality of the separate features, removing the sacrificial material from the separate features to form a plurality of openings in the insulating filling material such that the seed material is exposed in the plurality of openings, and growing a semiconductor material on the exposed seed material in the plurality of openings. | 01-20-2011 |
| 20110227020 | BOTTOM ELECTRODES FOR USE WITH METAL OXIDE RESISTIVITY SWITCHING LAYERS - In a first aspect, a metal-insulator-metal (MIM) stack is provided that includes (1) a first conductive layer comprising a silicon-germanium (SiGe) alloy; (2) a resistivity-switching layer comprising a metal oxide layer formed above the first conductive layer; and (3) a second conductive layer formed above the resistivity-switching layer. A memory cell may be formed from the MIM stack. Numerous other aspects are provided. | 09-22-2011 |
| 20110227028 | BOTTOM ELECTRODES FOR USE WITH METAL OXIDE RESISTIVITY SWITCHING LAYERS - In a first aspect, an MIM stack is provided that includes (1) a first conductive layer comprising a first metal-silicide layer and a second metal-silicide layer; (2) a resistivity-switching layer comprising a metal oxide layer formed above the first conductive layer; and (3) a second conductive layer formed above the resistivity-switching layer. A memory cell may be formed from the MIM stack. Numerous other aspects are provided. | 09-22-2011 |
Raghuveer S. Makala, Visakhapatanam IN
| Patent application number | Description | Published |
|---|---|---|
| 20080292531 | ELECTRICAL CURRENT-INDUCED STRUCTURAL CHANGES AND CHEMICAL FUNCTIONALIZATION OF CARBON NANOTUBES - A method of cutting, thinning, welding and chemically functionalizing multiwalled carbon nanotubes (CNTs) with carboxyl and allyl moieties, and altering the electrical properties of the CNT films by applying high current densities combined with air-exposure is developed and demonstrated. Such welded high-conductance CNT networks of functionalized CNTs could be useful for device and sensor applications, and may serve as high mechanical toughness mat fillers that are amenable to integration with nanocomposite matrices. | 11-27-2008 |