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Majumdar, US
Abhinandan Majumdar, Edison, NJ US
| Patent application number | Description | Published |
|---|---|---|
| 20110119467 | MASSIVELY PARALLEL, SMART MEMORY BASED ACCELERATOR - Systems and methods for massively parallel processing on an accelerator that includes a plurality of processing cores. Each processing core includes multiple processing chains configured to perform parallel computations, each of which includes a plurality of interconnected processing elements. The cores further include multiple of smart memory blocks configured to store and process data, each memory block accepting the output of one of the plurality of processing chains. The cores communicate with at least one off-chip memory bank. | 05-19-2011 |
| 20120079298 | ENERGY EFFICIENT HETEROGENEOUS SYSTEMS - Low-power systems and methods are disclosed for executing an application software on a general purpose processor and a plurality of accelerators with a runtime controller. The runtime controller splits a workload across the processor and the accelerators to minimize energy. The system includes building one or more performance models in an application-agnostic manner; and monitoring system performance in real-time and adjusting the workload splitting to minimize energy while conforming to a target quality of service (QoS). | 03-29-2012 |
Adhip P. N. Majumdar, Ferndale, MI US
| Patent application number | Description | Published |
|---|---|---|
| 20120121589 | MODIFIED EGFR ECTODOMAIN - A protein that attenuates EGFR and/or EGFR family members comprises a modified EGFR ectodomain. The protein inhibits signaling via the EGFR and/or EGFR family members. The protein includes a portion of the EGFR (or EGFR family member) and the “U” region epitope of EGFR related protein (ERRP), wherein the portion of the EGFR is operable to bind a ligand of EGFR. Also included are nucleic acids encoding such proteins. Attenuating EGFR signaling can include inhibiting the EGFR and/or EGFR family members and to provide antiproliferative activity. The present proteins and expression of nucleic acids encoding these proteins can regulate cellular growth and can be used to treat tumors and cancerous cells that express one or more of the EGFR and EGFR family members. | 05-17-2012 |
Amian Majumdar, Portland, OR US
| Patent application number | Description | Published |
|---|---|---|
| 20090325350 | FIELD EFFECT TRANSISTOR WITH METAL SOURCE/DRAIN REGIONS - A semiconductor device comprising a gate electrode formed on a gate dielectric layer formed on a semiconductor film. A pair of source/drain regions are formed adjacent the channel region on opposite sides of the gate electrode. The source and drain regions each comprise a semiconductor portion adjacent to and in contact with the semiconductor channel and a metal portion adjacent to and in contact with the semiconductor portion. | 12-31-2009 |
Amlan Majumdar, Portland, OR US
| Patent application number | Description | Published |
|---|---|---|
| 20080258207 | Block Contact Architectures for Nanoscale Channel Transistors - A contact architecture for nanoscale channel devices having contact structures coupling to and extending between source or drain regions of a device having a plurality of parallel semiconductor bodies. The contact structures being able to contact parallel semiconductor bodies having sub-lithographic pitch. | 10-23-2008 |
| 20090159872 | Reducing Ambipolar Conduction in Carbon Nanotube Transistors - Ambipolar conduction can be reduced in carbon nanotube transistors by forming a gate electrode of a metal. Metal sidewall spacers having different workfunctions than the gate electrode may be formed to bracket the metal gate electrode. | 06-25-2009 |
| 20090218603 | SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF FORMING SEMICONDUCTOR STRUCTURES - A method of patterning a semiconductor film is described. According to an embodiment of the present invention, a hard mask material is formed on a silicon film having a global crystal orientation wherein the semiconductor film has a first crystal plane and second crystal plane, wherein the first crystal plane is denser than the second crystal plane and wherein the hard mask is formed on the second crystal plane. Next, the hard mask and semiconductor film are patterned into a hard mask covered semiconductor structure. The hard mask covered semiconductor structured is then exposed to a wet etch process which has sufficient chemical strength to etch the second crystal plane but insufficient chemical strength to etch the first crystal plane. | 09-03-2009 |
| 20110062520 | METHOD FOR FABRICATING TRANSISTOR WITH THINNED CHANNEL - A method of fabricating a MOS transistor having a thinned channel region is described. The channel region is etched following removal of a dummy gate. The source and drain regions have relatively low resistance with the process. | 03-17-2011 |
| 20110156145 | FABRICATION OF CHANNEL WRAPAROUND GATE STRUCTURE FOR FIELD-EFFECT TRANSISTOR - A method for fabricating a field-effect transistor with a gate completely wrapping around a channel region is described. Ion implantation is used to make the oxide beneath the channel region of the transistor more etchable, thereby allowing the oxide to be removed below the channel region. Atomic layer deposition is used to form a gate dielectric and a metal gate entirely around the channel region once the oxide is removed below the channel region. | 06-30-2011 |
| 20120032237 | SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF FORMING SEMICONDUCTOR STRUCTURES - A method of patterning a semiconductor film is described. According to an embodiment of the present invention, a hard mask material is formed on a silicon film having a global crystal orientation wherein the semiconductor film has a first crystal plane and second crystal plane, wherein the first crystal plane is denser than the second crystal plane and wherein the hard mask is formed on the second crystal plane. Next, the hard mask and semiconductor film are patterned into a hard mask covered semiconductor structure. The hard mask covered semiconductor structured is then exposed to a wet etch process which has sufficient chemical strength to etch the second crystal plane but insufficient chemical strength to etch the first crystal plane. | 02-09-2012 |
Barun Majumdar, Redmond, WA US
| Patent application number | Description | Published |
|---|---|---|
| 20100278679 | NANOPHASE CRYOGENIC-MILLED COPPER ALLOYS AND PROCESS - There is provided cryogenic milled nanophase copper alloys and methods of making the alloys. The alloys are fine grained having grains in the size range from about 2 to about 100 nanometers, and greater. The nanophase alloys possess desirable physical properties stemming from the fine grain size, such as potentially high strength. Some embodiments of the cryogenic milled copper alloys may also be tailored for ductility, toughness, fracture resistance, corrosion resistance, fatigue resistance and other physical properties by balancing the alloy composition. In addition, embodiments of the alloys generally do not require extensive or expensive post-cryogenic milling processing. | 11-04-2010 |
Diptarka Majumdar, Cary, NC US
| Patent application number | Description | Published |
|---|---|---|
| 20110048527 | SILVER THICK FILM PASTE COMPOSITIONS AND THEIR USE IN CONDUCTORS FOR PHOTOVOLTAIC CELLS - This invention provides a silver thick film paste composition comprising a silver powder comprising silver particles, each said silver particle comprising silver components 100-2000 nm long, 20-100 nm wide and 20-100 nm thick assembled to form a spherically-shaped, open-structured particle, wherein the d | 03-03-2011 |
Dyuti Majumdar, Milford, CT US
| Patent application number | Description | Published |
|---|---|---|
| 20100204472 | Indane acetic acid derivatives and their use as pharmaceutical agents, intermediates, and method of preparation - This invention relates to novel indane acetic acid derivatives which are useful in the treatment of diseases such as diabetes, obesity, hyperlipidemia, and atherosclerotic diseases. The invention also relates to intermediates useful in preparation of indane acetic derivatives and to methods of preparation. | 08-12-2010 |
Dyuti Majumdar, Cambridge, MA US
| Patent application number | Description | Published |
|---|---|---|
| 20090247547 | HYDROXAMATE-BASED INHIBITORS OF DEACETYLASES B - The present teachings relate to compounds of Formula I: | 10-01-2009 |
| 20110183964 | HYDROXAMATE-BASED INHIBITORS OF DEACETYLASES B - The present teachings relate to compounds of Formula I: | 07-28-2011 |
Jayanta Majumdar, Carmel, IN US
| Patent application number | Description | Published |
|---|---|---|
| 20100115087 | APPARATUS AND METHOD FOR DETECTING KEY WORDS WITHIN DATA FEEDS - An apparatus such as a cordless telephone handset is capable of detecting key words within received data feeds. According to an exemplary embodiment, the apparatus includes an input for receiving a data feed, and a controller for determining whether content of the received data feed includes a key word. If the controller determines that the content includes the key word, a signal is generated to notify a user. | 05-06-2010 |
Manas K. Majumdar, Audubon, PA US
| Patent application number | Description | Published |
|---|---|---|
| 20090202474 | EXPRESSION OF ORPHAN GPR64 IN INFLAMMATORY DISEASES - Methods of screening for agents for treating inflammatory diseases are provided. The methods involve screening for agents that modulate the activity or expression of GPR64, which has been discovered herein to play a role in inflammatory diseases. Methods for treating an inflammatory disease, as well as methods of modulating the activity or expression of GPR64, methods of screening for an inflammatory disease in a subject, pharmaceutical compositions, a nucleic acid variant, and antibodies are also provided. | 08-13-2009 |
Partha Majumdar, Fargo, ND US
| Patent application number | Description | Published |
|---|---|---|
| 20100004202 | Quaternary ammonium-functionalized-POSS compounds - A silsesquioxane cage structure has a general formula [R | 01-07-2010 |
| 20110236343 | Antimicrobial polysiloxane materials containing metal species - Polysiloxane-based materials, which include metal species, are provided. The polysiloxane-based compositions and materials generally include (i) amino-functional polysiloxane material and (ii) a plurality of metal species distributed within the polymeric material. Polymer based compositions in which the amino-functional polysiloxane material includes quaternary ammonium groups, e.g., tetraalkyl ammonium groups, are examples of suitable materials which may be used to form the present compositions. The metal species, which may be in an oxidized and/or neutral state, may be bonded, coordinated, chelated, suspended, and/or dispersed within the polymeric material. | 09-29-2011 |
Partha S. Majumdar, Fargo, ND US
| Patent application number | Description | Published |
|---|---|---|
| 20090017288 | Polymeric material with surface microdomains - A polymeric material may be prepared by reacting a composition that includes polyol, polyisocyanate, and polyorganosiloxane having functional groups capable of reacting with the polyisocyanate, wherein the polymeric material has a surface which includes raised microdomains. | 01-15-2009 |
| 20100323190 | Polymeric material with surface microdomains - A polymeric material may be prepared by reacting a composition that includes polyol, polyisocyanate, and polyorganosiloxane having functional groups capable of reacting with the polyisocyanate, wherein the polymeric material has a surface which includes raised microdomains. | 12-23-2010 |
Soumyajit Majumdar, Oxford, MS US
| Patent application number | Description | Published |
|---|---|---|
| 20110275555 | COMPOSITIONS CONTAINING DELTA-9-THC-AMINO ACID ESTERS AND PROCESS OF PREPARATION - Compositions of the formulae (I), (II) and (III); where R1, R2 and R3 are residues of amino acids such as, but not limited to, valine, sarcosine, leucine, glutamine, tryptophan, tyrosine, alanine and 4(4-aminophenyl)butyric acid or combination thereof, and salts thereof. Methods of preparation of these compositions and methods of treating any disease condition responsive to THC comprising administration of at least one these compositions in a pharmaceutically acceptable carrier using a pharmaceutically acceptable formulation. | 11-10-2011 |
Zigurts Krishna Majumdar, Washington, DC US
| Patent application number | Description | Published |
|---|---|---|
| 20120081695 | MOBILE PHONE HYPERSPECTRAL IMAGER WITH SINGLE-FRAME SPATIAL, SPECTRAL AND POLARIZATION INFORMATION - A portable spectroscopic device for acquiring single-frame spatial, spectral, and polarization information of an object. The device includes a modular dispersion element assembly that is coupled to a mobile computing device and disperses light into a plurality of different wavelengths. The mobile computing device includes a sensor and is configured to receive and analyze the plurality of wavelengths. The mobile computing device is also configured to perform automatic calibrations to determine the absolute wavelength axis and make stray-light corrections with minimal user intervention, thus making it amenable for untrained users not familiar with the state of the art. The mobile computing device is also configured to extend dynamic range. | 04-05-2012 |