| Patent application number | Description | Published |
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| 20080307240 | POWER MANAGEMENT ELECTRONIC CIRCUITS, SYSTEMS, AND METHODS AND PROCESSES OF MANUFACTURE - An electronic circuit including a power managed circuit ( | 12-11-2008 |
| 20090168496 | Memory Cell Having Improved Write Stability - A method is provided for writing to a memory cell having a read access circuit that is separate and isolatable from a write access circuit. The method comprises providing a logic state to be written to the memory cell onto a write bit line coupled to the memory cell through the write access circuit, changing a write word line that controls the write access circuit from a deactivated low voltage state to an activated high voltage state, and changing a read word line that controls the read access circuit from an activated low voltage state to a deactivated high voltage state, wherein the change in voltage on the read word line provides a voltage boost to the voltage on the write word line caused by the electrical coupling between the read word line and the write word line to provide write assist to the memory cell during a write operation. | 07-02-2009 |
| 20090267638 | Apparatus, System and Method of Power State Control - An apparatus, system and method for asynchronously reducing power in a power domain. In one embodiment, the method includes: (1) receiving a sleep command for the power domain, (2) receiving, upon receiving the sleep command, an affirmative retention status signal denoting that a retention area in the power domain has stored data, (3) receiving, upon receiving the sleep command, an affirmative isolation status signal that denotes that an isolation of the power domain has occurred and (4) providing a power domain off command to the power domain upon receiving at least the sleep command, the affirmative status retention signal and the affirmative status isolation signal. In another embodiment, multiple enable signals are employed to generate a “glitch-free” control for a power switch. | 10-29-2009 |
| 20090316500 | Memory Cell Employing Reduced Voltage - A memory array is provided having a memory cell coupled to a read word line and a write word line of the memory array and peripheral circuits for reading and writing to the memory cell. The memory cell comprises a storage element for storing a logical state of the memory cell powered at a reduced voltage during at least one functional operation and a write access circuit configured to connect the storage element to at least a first write bit line in the memory array in response to a write signal on the write word line for writing the logical state to the memory cell. The memory cell further comprises a read access circuit including an input node connected to the storage element and an output node connected to a read bit line of the memory array. The read access circuit is enabled and configured to read the logic state of the storage element in response to a read signal on the read word line. The reduced voltage is a voltage that is reduced relative to a peripheral operating voltage of at least one peripheral circuit associated with reading and/or writing of the memory cell. | 12-24-2009 |
| 20110069565 | MEMORY CELL EMPLOYING REDUCED VOLTAGE - A memory array is provided having a memory cell coupled to a read word line and a write word line of the memory array and peripheral circuits for reading and writing to the memory cell. The memory cell comprises a storage element for storing a logical state of the memory cell powered at a reduced voltage during at least one functional operation and a write access circuit configured to connect the storage element to at least a first write bit line in the memory array in response to a write signal on the write word line for writing the logical state to the memory cell. The memory cell further comprises a read access circuit including an input node connected to the storage element and an output node connected to a read bit line of the memory array. The read access circuit is enabled and configured to read the logic state of the storage element in response to a read signal on the read word line. The reduced voltage is a voltage that is reduced relative to a peripheral operating voltage of at least one peripheral circuit associated with reading and/or writing of the memory cell. | 03-24-2011 |
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| 20090039952 | System and Method for Auto-Power Gating Synthesis for Active Leakage Reduction - A method includes parsing a design of the integrated circuit to define cells in automatic power gating power domains, automatically creating an automatic power gating power domain netlist from the parsed design of the integrated circuit, and placing and routing the automatic power gating power domain netlist to produce a layout for the integrated circuit. The parsing partitions a high-level power domain of the integrated circuit into one or more automatic power gating power domains. The automatic power gating power domains have substantially zero-cycle power up times, thereby enabling transparent operation. Furthermore, the automatic power gating power domains may be automatically inserted into designs of integrated circuits, thereby relieving integrated circuit designers of the task of inserting power domains and associated hardware and software. | 02-12-2009 |
| 20090177451 | APPARATUS AND METHOD FOR ACCELERATING SIMULATIONS AND DESIGNING INTEGRATED CIRCUITS AND OTHER SYSTEMS - A method of accelerating a Monte Carlo (MC) simulation for a system including a first component having a first input parameter and a second component having a second input parameter. The simulation model provided includes a first component model including a first model parameter corresponding to the first input parameter and a second component model having a second model parameter corresponding to the second input parameter. A first acceleration factor for the first component and a second acceleration factor for the second component are calculated based on at least the respective number of instances. A first scaled distribution is computed from the first distribution and a second scaled distribution is computed from the second distribution based on the respective acceleration factors. The MC simulation for the system is run, wherein values for the first model parameter value and second model parameter value are obtained based on the respective scaled distributions. | 07-09-2009 |
| 20090262588 | POWER SAVINGS WITH A LEVEL-SHIFTING BOUNDARY ISOLATION FLIP-FLOP (LSIFF) AND A CLOCK CONTROLLED DATA RETENTION SCHEME - An apparatus for providing active mode power reduction for circuits having data retention includes a master slave flip flop (MSFF) for latching a data input. An output level shifter (OLS), coupled to the MSFF, retains the data input in response to the MSFF being operable in an active power saving mode (APSM) to reduce power. The OLS operating in the APSM provides a level shifter output having a configurable voltage, thereby providing output isolation. A change in an operating mode of the MSFF between an active mode and the APSM is independent of a retention (RET) mode input. | 10-22-2009 |
| 20090303776 | STATIC RANDOM ACCESS MEMORY CELL - A six transistor (“6T) static random access memory (“SRAM”) cell and method for using the same are disclosed herein. The 6T SRAM cell includes a single read pass gate transistor and a single write pass gate transistor. The single read pass gate transistor is connected to a read bit line and a read word line. The single write pass gate transistor connected to a write bit line and a write word line. | 12-10-2009 |
| 20100103760 | Memory Power Management Systems and Methods - Memory power management systems and methods are provided. One embodiment of the present invention includes a memory power management system. The system comprises a first low dropout (LDO) regulator that provides an active operating voltage that is derived from a first supply voltage to power a memory array during an active mode. The system further comprises a second LDO regulator that provides a minimum memory retention voltage that is derived from a second supply voltage to power the memory array in a standby mode, wherein the second supply voltage also powers at least one peripheral circuit for reading from and/or writing to the memory array. | 04-29-2010 |
| 20100253387 | SYSTEM AND METHOD FOR AUTO-POWER GATING SYNTHESIS FOR ACTIVE LEAKAGE REDUCTION - A method includes parsing a design of the integrated circuit to define cells in automatic power gating power domains, automatically creating an automatic power gating power domain netlist from the parsed design of the integrated circuit, and placing and routing the automatic power gating power domain netlist to produce a layout for the integrated circuit. The parsing partitions a high-level power domain of the integrated circuit into one or more automatic power gating power domains. The automatic power gating power domains have substantially zero-cycle power up times, thereby enabling transparent operation. Furthermore, the automatic power gating power domains may be automatically inserted into designs of integrated circuits, thereby relieving integrated circuit designers of the task of inserting power domains and associated hardware and software. | 10-07-2010 |
| 20110007580 | LOCAL SENSING AND FEEDBACK FOR AN SRAM ARRAY - An integrated circuit having an SRAM array includes SRAM cells arranged in rows and columns, and a global read circuit connected to globally read SRAM cells corresponding to accessed rows and columns of the SRAM array. The SRAM array also includes a separate, local sense and feedback circuit connected to a local column of the SRAM array, wherein a sensing portion indicates a memory state of an SRAM cell in an accessed row of the local column and a feedback portion rewrites the memory state back into the SRAM cell. Additionally, a method of operating an integrated circuit having an SRAM array includes providing an SRAM cell in an addressed condition of the SRAM array. The method also includes locally sensing a current memory state of the SRAM cell and locally feeding back to the SRAM cell to retain the memory state during the addressed condition. | 01-13-2011 |
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| 20090097327 | SYSTEMS AND METHODS FOR READING DATA FROM A MEMORY ARRAY - One embodiment of the present invention includes a column multiplexer for accessing data from a memory array comprising an output node having a logic state that is based on a logic state of a control node, and column elements, each comprising a first pair of series connected switches controlled by a column select signal and a bit line signal associated with data stored in a plurality of memory cells. The first pair of switches is configured to set the control node to a logic low state based on a logic state of the bit line signal. The column elements each also comprise a second pair of series connected switches controlled by the bit line signal and a complement of the column select signal. The second pair of switches is configured to set the control node to a logic high state based on the logic state of the bit line signal. | 04-16-2009 |
| 20110037447 | Component Powered by HDMI Interface - A HDMI (High-Definition Multimedia Interface) transmitter component may be operated solely on power that is scavenged and converted from termination tail current received while the HDMI transmitter component is coupled to an HDMI compliant sink connector on a HDMI receiver component. The termination tail current is received at the transmitter component from a plurality of differential HDMI signals from terminators on a receiver component. A portion of the received tail current is converted to form a supply voltage Vdd source. Function logic on the transmitter component is operated using the Vdd voltage, and the function logic is configured to control the plurality of differential signals. | 02-17-2011 |
| 20110095794 | Enhancement of Power Management Using Dynamic Voltage and Frequency Scaling and Digital Phase Lock Loop High Speed Bypass Mode - An apparatus for clock/voltage scaling includes a device power manager arranged to supply a scalable frequency clock to an interface; a delay-locked loop, supplied by a constant fixed frequency clock and a constant voltage, arranged to generate a unique code depending on process, voltage, and/or temperature; and controlled delay line elements coupled to the delay-locked loop, arranged to generate an appropriate delayed data strobe based on the unique code. A method for a digital phase lock loop high speed bypass mode includes providing a first digital phase lock loop in a first high speed clock domain; providing a second digital phase lock loop in a second clock domain; controlling an output of a first glitchless multiplexer according to preselected settings using a device power manager synchronized locally; and controlling an output of a second glitchless multiplexer using a control logic element of the second digital phase lock loop. | 04-28-2011 |
