Magistretti
Eugenio Magistretti, Bologna IT
Patent application number | Description | Published |
---|---|---|
20140056231 | METHOD AND SYSTEM FOR WIRELESSLY TRANSMITTING DATA - A method for transmitting data from a sender to a receiver over a channel. The method includes identifying the receiver, obtaining an initiation correlated symbol sequence (CSS) associated with the receiver, transmitting the initiation CSS, where the sender and the receiver are configured to communicate over the channel, where the channel is a frequency band in a radio-frequency spectrum. The method further includes receiving a first reservation CSS from the receiver signaling that the receiver has reserved the channel in order to receive the data from the sender. In response to receiving the first reservation CSS, transmitting the data to the receiver, and receiving an acknowledgment CSS from the receiver signaling that the receiver has received the data from the sender. | 02-27-2014 |
Eugenio Magistretti, Houston, TX US
Patent application number | Description | Published |
---|---|---|
20120320887 | WIRELESS COMMUNICATIONS - The claimed subject matter provides a method for wireless communications. The method includes transmitting, by a first node in a wireless network, a first preamble. The method also includes detecting, in parallel with transmitting the first preamble, a transmission of a second preamble. A second node in the wireless network transmits the second preamble. Additionally, the method includes determining a later start between the transmission of the first preamble and the transmission of the second preamble. The method further includes terminating transmission of the first preamble the determining indicates that the transmission of the first preamble started after the transmission of the second preamble. | 12-20-2012 |
Michele Magistretti, Milano IT
Patent application number | Description | Published |
---|---|---|
20120001145 | AVOIDING DEGRADATION OF CHALCOGENIDE MATERIAL DURING DEFINITION OF MULTILAYER STACK STRUCTURE - A storage element structure for phase change memory (PCM) cell and a method for forming such a structure are disclosed. The method of forming a storage element structure, comprises providing a multilayer stack comprising a chalcogenide layer ( | 01-05-2012 |
Michele Magistretti US
Patent application number | Description | Published |
---|---|---|
20120298946 | Shaping a Phase Change Layer in a Phase Change Memory Cell - A phase change memory cell includes a phase change layer of a phase change material on a semiconductor body. A hard mask structure is formed on the phase change layer and a resist mask is formed on the hard mask structure. A hard mask is formed by shaping the hard mask structure using the resist mask. The phase change layer is shaped using the hard mask. The resist mask is removed before shaping the phase change layer. | 11-29-2012 |
Michele Magistretti, Gessate (mi) IT
Patent application number | Description | Published |
---|---|---|
20100006816 | Self-aligned vertical bipolar junction transistor for phase change memories - A phase change memory may include self-aligned polysilicon vertical bipolar junction transistors used as select devices. The bipolar junction transistors may be formed with double shallow trench isolation. For example, the emitters of each bipolar transistor may be defined by a first set of parallel trenches in one direction and a second set of parallel trenches in the opposite direction. In some embodiments, the formation of parasitic PNP transistors between adjacent emitters may be avoided. | 01-14-2010 |
20100163835 | CONTROLLING THE CIRCUITRY AND MEMORY ARRAY RELATIVE HEIGHT IN A PHASE CHANGE MEMORY FEOL PROCESS FLOW - A CMOS logic portion embedded with a PCM portion is recessed by a gate structure height as measured by a thickness of a gate oxide and a polysilicon gate to provide planarity of the CMOS logic portion with the PCM portion is described. | 07-01-2010 |
Michele Magistretti, Gessate IT
Patent application number | Description | Published |
---|---|---|
20080203379 | ARRAY OF VERTICAL BIPOLAR JUNCTION TRANSISTORS, IN PARTICULAR SELECTORS IN A PHASE CHANGE MEMORY DEVICE - A process for manufacturing an array of bipolar transistors, wherein deep field insulation regions of dielectric material are formed in a semiconductor body, thereby defining a plurality of active areas, insulated from each other and a plurality of bipolar transistors are formed in each active area. In particular, in each active area, a first conduction region is formed at a distance from the surface of the semiconductor body; a control region is formed on the first conduction region; and, in each control region, at least two second conduction regions and at least one control contact region are formed. The control contact region is interposed between the second conduction regions and at least two surface field insulation regions are thermally grown in each active area between the control contact region and the second conduction regions. | 08-28-2008 |
20100059829 | PROCESS FOR MANUFACTURING A MEMORY DEVICE INCLUDING A VERTICAL BIPOLAR JUNCTION TRANSISTOR AND A CMOS TRANSISTOR WITH SPACERS - A bipolar selection transistor and a circuitry MOS transistor for a memory device are formed in a semiconductor body. The bipolar selection transistor is formed by implanting a buried collector, implanting a base region on the buried collector, forming a silicide protection mask on the semiconductor body, and implanting an emitter region and a control contact region. The circuitry MOS transistor is formed by defining a gate on the semiconductor body, forming lateral spacers on the sides of the gate and implanting source and drain regions on the sides of the lateral spacers. Then, a silicide region is formed on the emitter, base contact, source and drain regions and the gate, in a self-aligned way. The lateral spacers are multilayer structures including at least two different layers, one of which is used to form the silicide protection mask on the bipolar selection transistor. Thereby, the dimensions of the lateral spacers are decoupled from the thickness of the silicide protection mask. | 03-11-2010 |
20110248233 | METHOD FOR FABRICATING A PHASE-CHANGE MEMORY CELL - A method for fabricating a phase-change memory cell is described. The method includes forming a dielectric layer (228) on a metal layer (226) above a substrate. A phase-change material layer (230) is formed on the dielectric layer. A contact region (232) is formed, within the dielectric layer, between the phase-change material layer and the metal layer by breaking-down a portion of the dielectric layer. | 10-13-2011 |
20150044832 | RESISTIVE RANDOM ACCESS MEMORY - A resistive random access memory may include a memory array and a periphery around the memory array. Decoders in the periphery may be coupled to address lines in the array by forming a metallization in the periphery and the array at the same time using the same metal deposition. The metallization may form row lines in the array. | 02-12-2015 |
Pierre Magistretti, Epalinges CH
Patent application number | Description | Published |
---|---|---|
20150105464 | 4-OXO-2-PENTENOIC ACID AND BRAIN HEALTH - The present invention relates generally to compositions with a health benefit. In particular, the invention relates to the field of brain health, for example brain protection, maintenance of cognitive function, prevention of cognitive decline and prevention of cognitive disorders. A subject matter of the invention is a composition comprising 4-oxo-2-pentenoic acid for use in the treatment or prevention of cognitive decline. | 04-16-2015 |
Pierre Julius Magistretti, Epalinges CH
Patent application number | Description | Published |
---|---|---|
20120038931 | MONITORING ENERGY AND MATTER FLUXES BY USE OF ELECTROMAGNETIC RADIATIONS - Apparatus and method are provided for monitoring and measuring matter and energy fluxes by use of devices able to detect refractive index changes. In one aspect, apparatus use an interference between two electromagnetic radiations in order to provide high sensitivity, enabling fluxes monitoring at the microscopic scale, by measuring phase changes or Optical Path Length (OPL) changes. In one aspect, methods are provided for monitoring and measuring the electrical activity of a biological cells, simultaneously on several cells, without use of electrodes and contrast agents. | 02-16-2012 |
20130210066 | APPARATUS AND METHOD FOR EARLY DIAGNOSIS OF CELL DEATH - An apparatus for measuring through optical means temporally resolved, optical properties, and/or phenotypes, linked to cellular homeostasis. Those temporal measurements enable the detection of cell regulation through various channels linked to homeostasis, in order to assess cell viability or early cell death through rapid diagnostic. | 08-15-2013 |