Patent application number | Description | Published |
20090123649 | METHOD OF MANUFACTURING SILICON NANOTUBES USING DOUGHNUT-SHAPED CATALYTIC METAL LAYER - Provided is a method of manufacturing silicon nanotubes including forming non-catalytic metal islands on a substrate; forming catalyst metal doughnuts to surround the non-catalytic metal islands; and growing silicon nanotubes on the catalyst metal doughnuts. The silicon nanotubes are efficiently grown using the catalyst metal doughnuts. | 05-14-2009 |
20090325365 | METHOD OF MANUFACTURING SILICON NANOWIRES USING SILICON NANODOT THIN FILM - Provided is a method of manufacturing silicon nanowires including: forming a silicon nanodot thin film having a plurality of silicon nanodots exposed on a substrate; and growing the silicon nanowires on the silicon nanodot thin film using the silicon nanodots as a nucleation site. The silicon nanowires can be manufactured using the silicon nanodot thin film disposed in a silicon nitride matrix, as a nucleation site instead of using catalytic metal islands, wherein the silicon nanodot thin film includes the silicon nanodots. | 12-31-2009 |
20100012919 | GAS SENSOR HAVING ZINC OXIDE NANO-STRUCTURES AND METHOD OF FABRICATING THE SAME - Provided are a gas sensor using a plurality of zinc oxide nano-structures on which metal islands are formed, and a method of fabricating the same. The gas sensor comprises zinc oxide nano-structures formed on a substrate, a plurality of metal islands coated on a surface of each zinc oxide nano-structure and separated from one another, a first electrode electrically connected to one end of each zinc oxide nano-structure through the substrate, a second electrode electrically connected to the other end of each zinc oxide nano-structure, and a current variation-measuring unit electrically connected to each of the first electrode and the second electrode so as to measure a variation in the amount of current flowing between the first electrode and the second electrode. In order to form the plurality of metal islands separated from one another on the surface of each zinc oxide nano-structure using a wet process, metal components of a metal material are coated on the surface of each zinc oxide nano-structure using the solution in which the metal material is solved. | 01-21-2010 |
20100193824 | 2-TERMINAL SEMICONDUCTOR DEVICE USING ABRUPT METAL-INSULATOR TRANSITION SEMICONDUCTOR MATERIAL - Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-terminal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2 eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer. | 08-05-2010 |
Patent application number | Description | Published |
20090230428 | DEVICES USING ABRUPT METAL-INSULATOR TRANSITION LAYER AND METHOD OF FABRICATING THE DEVICE - The abrupt metal-insulator transition device includes: an abrupt metal insulator transition material layer including an energy gap of less than or equal to | 09-17-2009 |
20100035179 | METHOD OF SYNTHESIZING ITO ELECTRON-BEAM RESIST AND METHOD OF FORMING ITO PATTERN USING THE SAME - Provided is a method of synthesizing an ITO electron beam resist and a method of forming an ITO pattern. The ITO electron beam resist is synthesized by dissolving indium chloride tetrahydrate and tin chloride dihydrate in 2-ethoxy ethanol. The method of forming an ITO pattern includes: forming an ITO electron beam resist film on a substrate, forming an ITO electron beam resist pattern by patterning the ITO electron beam resist film, and forming an ITO pattern by annealing the ITO electron beam resist pattern. | 02-11-2010 |
20100055016 | METHOD OF MANUFACTURING OXIDE-BASED NANO-STRUCTURED MATERIAL - Provided is a method of manufacturing oxide-based nano-structured materials using a chemical wet process, and thus, the method can be employed to manufacture oxide-based nano-structured materials having uniform composition and good electrical characteristics in large quantities, the method having a relatively simple process which does not use large growing equipment. The method includes preparing a first organic solution that comprises a metal, mixing the first organic solution with a second organic solution that contains hydroxyl radicals (—OH), filtering the mixed solution using a filter in order to extract oxide-based nano-structured materials formed in the mixed solution, drying the extracted oxide-based nano-structured materials to remove any remaining organic solution, and heat treating the dried oxide-based nano-structured materials. | 03-04-2010 |
20100117058 | MULTI-STRUCTURE NANOWIRE AND METHOD OF MANUFACTURING THE SAME - Provided is a multi-structure nanowire in which silicon nanowires are formed at both ends of a compound semi-conductor nanorod, and a method of manufacturing the multi-structure nanowire. The method includes providing a compound semiconductor nanorod; forming metal catalyst tips on both ends of the compound semiconductor nanorod; and growing silicon nanowires on both ends of the compound semiconductor nanorod where the metal catalyst tips are formed. | 05-13-2010 |
20110135827 | METHOD OF FABRICATING CARBON NANOTUBES UNIFORMLY COATED WITH TITANIUM DIOXIDE - Provided is CNTs on which TiO | 06-09-2011 |