Patent application number | Description | Published |
20090032393 | Mirror Magnetron Plasma Source - A new and useful plasma source is provided, comprising at least one electrode connected to an alternating current power supply and disposed adjacent to a portion of a grounded substrate. The electrode has a center magnet that produces a magnetron plasma at the electrode when the electrode is biased negative by the alternating power supply, and a mirror plasma on the substrate when the electrode is biased positive by the alternating power supply. | 02-05-2009 |
20100155226 | ROTATABLE MAGNETRON SPUTTERING WITH AXIALLY MOVABLE TARGET ELECTRODE TUBE - A new and useful rotatable sputter magnetron assembly is provided, that addresses the issue of uneven wear of the target electrode tube. According to the principles of the present invention, a rotatable sputter magnetron assembly for use in magnetron sputtering target material onto a substrate comprises a. a longitudinally extending tubular shaped target electrode tube having a longitudinal central axis, b. the target electrode tube extending about a magnet bar that is configured to generate a plasma confining magnetic field adjacent the target electrode tube, c. the magnet bar being held substantially stationary within the target electrode tube, and d. the target electrode tube supported for rotation about its longitudinal central axis and for axial movement along its longitudinal central axis, so that wear of the target electrode tube can be controlled by moving the target electrode tube axially during magnetron sputtering of the target material. | 06-24-2010 |
20110005919 | SPUTTERING TARGET TEMPERATURE CONTROL UTILIZING LAYERS HAVING PREDETERMINED EMISSIVITY COEFFICIENTS - A sputter coating apparatus for sputter coating a substrate in a processing chamber includes a target of sputter coating material supported within the processing chamber. The target has a sputtering surface and a back surface. The target is affixed to a backing plate such that the back surface of the target is disposed adjacent to a first surface of the backing plate. The backing plate is in fluid communication with a source of cooling fluid. The target back surface has a first layer selected to have a high thermal emissivity coefficient. The backing plate first surface carries a second layer having a high emissivity coefficient. The target back surface first layer and the backing plate first surface second layer provide enhanced heat transfer between the target and the backing plate via thermal radiation. | 01-13-2011 |
20120164353 | PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION APPARATUS - PECVD apparatus for depositing material onto a moving substrate is provided comprising a process chamber, a precursor gas inlet to the process chamber, a pumped outlet, and a plasma source disposed within the process chamber. The plasma source produces one or more negative glow regions and one or more positive columns. At least one positive column is disposed toward the substrate. The plasma source and precursor gas inlet are disposed relative to each other and the substrate such that the precursor gas is injected into the positive column adjacent the substrate. Apparatus is provided to channel the precursor gas into the positive column away from the negative glow region. | 06-28-2012 |
20140057453 | DEPOSITION OF THIN FILMS ON ENERGY SENSITIVE SURFACES - A process for plasma deposition of a coating is provided that includes exposure of a surface of a substrate to a source of adsorbate molecules to form a protective layer on the surface. The protective layer is then exposed in-line to a plasma volume to react the protective film to form the coating. This process occurs without an intermediate evacuation to remove the adsorbate molecules prior to contact with the plasma volume. As a result, kinetic ion impact damage to the surface is limited while efficient operation of the plasma deposition system continues. | 02-27-2014 |
Patent application number | Description | Published |
20110226611 | CLOSED DRIFT MAGNETIC FIELD ION SOURCE APPARATUS CONTAINING SELF-CLEANING ANODE AND A PROCESS FOR SUBSTRATE MODIFICATION THEREWITH - A process for modifying a surface of a substrate is provided that includes supplying electrons to an electrically isolated anode electrode of a closed drift ion source. The anode electrode has an anode electrode charge bias that is positive while other components of the closed drift ion source are electrically grounded or support an electrical float voltage. The electrons encounter a closed drift magnetic field that induces ion formation. Anode contamination is prevented by switching the electrode charge bias to negative in the presence of a gas, a plasma is generated proximal to the anode electrode to clean deposited contaminants from the anode electrode. The electrode charge bias is then returned to positive in the presence of a repeat electron source to induce repeat ion formation to again modify the surface of the substrate. An apparatus for modification of a surface of a substrate by this process is provided. | 09-22-2011 |
20110236591 | BIPOLAR RECTIFIER POWER SUPPLY - A process for powering an electrical load includes applying a rectified alternating current waveform across the load for a first time period with only a single power supply for at least two half cycles. At least one half cycle of an alternating current waveform of opposite polarity are then applied relative to the rectified alternating current waveform across the load for a second time period. Rectified alternating current waveform is then again applied across the load for at least two half cycles for a third time period to power the electrical load. The rectified alternating current waveform can be applied a direct current offset. A power supply is provided for provided power across the load according to this process. | 09-29-2011 |
20120097526 | ROTARY MAGNETRON - A rotary magnetron is provided with an end block for rotatably supporting a target on an axis of rotation. An elongate magnetic bar assembly is disposed within the target. A stator shaft is affixed in the end block; one end of the stator shaft is coupled to the elongate magnetic bar assembly to support the elongate magnetic bar assembly. The target has a target shaft extending over the stator shaft and rotatable thereon around the axis of rotation. The rotary magnetron is characterized by a rotating coolant seal disposed inside the target shaft proximate the one end of the stator shaft and proximate to the elongate magnetic bar assembly. | 04-26-2012 |
20120187843 | CLOSED DRIFT ION SOURCE WITH SYMMETRIC MAGNETIC FIELD - A closed drift ion source is provided comprising a single magnetic source, a first pole and a second pole. The ends of the first and second poles are separated by a gap. The magnetic source is disposed proximate to one of the first pole and second pole. A first magnetic path is provided between one magnetic pole of the single magnetic source and the end of the first pole. A second magnetic path is provided between the other magnetic pole of the single magnetic source and the end of the second pole. The first and second magnetic paths are selectively constructed to produce a symmetrical magnetic field in the gap. | 07-26-2012 |
20120231246 | PROCESS FOR REMOVAL OF BACKSIDE COATING FROM SUBSTRATE - A process for producing plasma coated glass substrates free of back side coating (BSC) is provided. A low-E glass coated structure is also provided that uses a BSC as a protective coating that promotes transport and handling of low-E glass that is then subsequently delaminated. A thin film is deposited on the back side of the glass substrate before the top side of the glass is coated. Then, during the sputter down process, BSC occurs as normal and deposits over this back side film (BSF). In a subsequent process, outside the vacuum chamber, the glass back side is washed or otherwise delaminated. The BSF composition is selected to make the BSC easily removed in this wash process or other delamination process. | 09-13-2012 |