Patent application number | Description | Published |
20130241536 | Magnetic Logic Units Configured to Measure Magnetic Field Direction - An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device. | 09-19-2013 |
20130241636 | Magnetic Logic Units Configured as an Amplifier - An apparatus includes a circuit and a field line. The circuit includes a magnetic tunnel junction including a storage layer and a sense layer. The field line is configured to generate a magnetic field based on an input signal, where the magnetic tunnel junction is configured such that a magnetization direction of the sense layer and a resistance of the magnetic tunnel junction vary based on the magnetic field. The circuit is configured to amplify the input signal to generate an output signal that varies in response to the resistance of the magnetic tunnel junction. | 09-19-2013 |
20150077095 | Magnetic Logic Units Configured to Measure Magnetic Field Direction - An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device. | 03-19-2015 |
20150077096 | Magnetic Logic Units Configured to Measure Magnetic Field Direction - An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device. | 03-19-2015 |
20150077097 | Magnetic Logic Units Configured to Measure Magnetic Field Direction - An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device. | 03-19-2015 |
20150077098 | Magnetic Logic Units Configured to Measure Magnetic Field Direction - An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device. | 03-19-2015 |
Patent application number | Description | Published |
20120008383 | MAGNETIC DEVICE WITH OPTIMIZED HEAT CONFINEMENT - The present disclosure concerns a magnetic element to be written using a thermally-assisted switching write operation comprising a magnetic tunnel junction formed from a tunnel barrier being disposed between first and second magnetic layers, said second magnetic layer having a second magnetization which direction can be adjusted during a write operation when the magnetic tunnel junction is heated at a high threshold temperature; an upper current line connected at the upper end of the magnetic tunnel junction; and a strap portion extending laterally and connected to the bottom end of the magnetic tunnel junction; the magnetic device further comprising a bottom thermal insulating layer extending substantially parallel to the strap portion and arranged such that the strap portion is between the magnetic tunnel junction and the bottom thermal insulating layer. The magnetic element allows for reducing heat losses during the write operation and has reduced power consumption. | 01-12-2012 |
20120106245 | THERMALLY ASSISTED MAGNETIC RANDOM ACCESS MEMORY ELEMENT WITH IMPROVED ENDURANCE - The present disclosure concerns a magnetic memory element suitable for a thermally-assisted switching write operation, comprising a current line in electrical communication with one end of a magnetic tunnel junction, the magnetic tunnel junction comprising: a first ferromagnetic layer having a fixed magnetization; a second ferromagnetic layer having a magnetization that can be freely aligned at a predetermined high temperature threshold; and a tunnel barrier provided between the first and second ferromagnetic layer; the current line being adapted to pass a heating current through the magnetic tunnel junction during the write operation; wherein said magnetic tunnel junction further comprises at least one heating element being adapted to generate heat when the heating current is passed through the magnetic tunnel junction; and a thermal barrier in series with said at least one heating element, said thermal barrier being adapted to confine the heat generated by said at least one heating element within the magnetic tunnel junction. | 05-03-2012 |
20130148419 | SELF-REFERENCED MAGNETIC RANDOM ACCESS MEMORY ELEMENT COMPRISING A SYNTHETIC STORAGE LAYER - The present disclosure concerns a MRAM element comprising a magnetic tunnel junction comprising: a storage layer, a sense layer, and a tunnel barrier layer included between the storage layer and the sense layer; the storage layer comprising a first magnetic layer having a first storage magnetization; a second magnetic layer having a second storage magnetization; and a non-magnetic coupling layer separating the first and second magnetic layers such that the first storage magnetization is substantially antiparallel to the second storage magnetization; the first and second magnetic layers being arranged such that: at a read temperature the first storage magnetization is substantially equal to the second storage magnetization; and at a write temperature which is higher than the read temperature the second storage magnetization is larger than the first storage magnetization. The disclosed MRAM element generates a low stray field when the magnetic tunnel junction is cooled at a low temperature. | 06-13-2013 |
20130163318 | Self-Referenced MRAM Cell and Method for Writing the Cell Using a Spin Transfer Torque Write Operation - The present disclosure concerns a method for writing to a self-referenced MRAM cell comprising a magnetic tunnel junction comprising: a storage layer including a first ferromagnetic layer having a first storage magnetization, a second ferromagnetic layer having a second storage magnetization, and a non-magnetic coupling layer separating the first and second ferromagnetic layers; a sense layer having a free sense magnetization; and a tunnel barrier layer included between the sense and storage layers; the first and second ferromagnetic layers being arranged such that a dipolar coupling between the storage) and the sense layers is substantially null; the method comprising: switching the second ferromagnetic magnetization by passing a spin-polarized current in the magnetic tunnel junction; wherein the spin-polarized current is polarized when passing in the sense layer, in accordance with the direction of the sense magnetization. The MRAM cell can be written with low power consumption. | 06-27-2013 |
20130201756 | Self-Referenced MRAM Element with Linear Sensing Signal - The present disclosure concerns a self-referenced MRAM element, comprising a magnetic tunnel junction having a magnetoresistance, comprising: a storage layer having a storage magnetization that is pinned along a first direction when the magnetic tunnel junction is at a low temperature threshold; a sense layer having a sense magnetization; and a tunnel barrier layer included between the storage layer and the sense layer; and an aligning device arranged for providing the sense magnetization with a magnetic anisotropy along a second direction that is substantially perpendicular to the first direction such that the sense magnetization is adjusted about the second direction; the aligning device being further arranged such that, when a first read magnetic field is provided, a resistance variation range of the magnetic tunnel junction is at least about 20% of the magnetoresistance. The self-referenced MRAM cell can be read with an increased reliability and has reducing power consumption. | 08-08-2013 |
Patent application number | Description | Published |
20120156748 | PROCESS FOR TREATMENT OF A LIGNOCELLULOSIC MATERIAL - A process for treatment of a lignocellulosic material comprising contacting the lignocellulosic material with a solution of chloride ions, which solution comprises a concentration of chloride ions in the range from equal to or more than 1 ppm weight to equal to or less than 350 ppm weight based on the total weight of the solution; at a temperature in the range from equal to or more than 120° C. to equal to or less than 200° C.; and at a pH in the range from equal to or more than 0.1 to equal to or less than 4. | 06-21-2012 |
20130071900 | PROCESS FOR PROCESSING A LIGNOCELLULOSIC MATERIAL - Calcium-containing lignocellulosic material is converted at a temperature in the range from equal to or more than 120° C. to equal to or less than 210° C. with an aqueous acid solution containing one or more inorganic acids and having a pH in the range from equal to or more than 1.8 to equal to or less than 4.0 to produce a mixture, containing pretreated lignocellulosic material and aqueous acid solution, having an overall pH in the range from equal to or more than 3.0 to equal to or less than 4.5. The process allows reduction in the formation of insoluble salts. | 03-21-2013 |
20130071901 | PROCESS FOR THE CONVERSION OF A XYLAN-CONTAINING FEED - A xylan-containing feed is contacted, in the first reactor essentially operated at plug flow, with an aqueous solution of an acid at a temperature in the range from equal to or more than 140° C. to equal to or less than 210° C. to produce an intermediate product. Then, the intermediate product is contacted, in the second reactor which comprises a continuously stirred tank reactor, with an aqueous solution of an acid at a temperature in the range from more than 130° C. to equal to or less than 200° C. to produce a final product. | 03-21-2013 |