Patent application number | Description | Published |
20080237711 | MANUFACTURING METHOD OF THIN-FILM SEMICONDUCTOR APPARATUS AND THIN-FILM SEMICONDUCTOR APPARATUS - A manufacturing method of a thin-film semiconductor apparatus and a thin-film semiconductor apparatus, in which a semiconductor thin film is spot-irradiated with an energy beam in the presence of n-type or p-type impurity to form a shallow diffusion layer in which the impurity is diffused only in a surface layer of the semiconductor thin film. | 10-02-2008 |
20080241981 | THIN FILM SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A thin film semiconductor device is provided that includes a semiconductor thin film and a gate electrode. The semiconductor thin film has an active region turned into a polycrystalline region through irradiation with an energy beam. The gate electrode is provided to traverse the active region. In a channel part that is the active region overlapping with the gate electrode, a crystalline state is changed cyclically in a channel length direction, and areas each having a substantially same crystalline state traverse the channel part. | 10-02-2008 |
20100051830 | SEMICONDUCTOR PROCESSING APPARATUS AND SEMICONDUCTOR PROCESSING METHOD - A semiconductor processing apparatus includes: a stage on which a substrate having a semiconductor film to be processed is to be mounted; a supply section that supplies a plurality of energy beams onto the semiconductor film mounted on the stage in such a way that irradiation points of the energy beams are aligned at given intervals; and a control section that moves the plurality of energy beams and the substrate relative to each other in a direction not in parallel to alignment of the irradiation points of the plurality of energy beams supplied by the supply section, and scans the semiconductor film with the irradiation points of the plurality of energy beams in parallel to thereby control a heat treatment on the semiconductor film. | 03-04-2010 |
20100093112 | LASER ANNEALING METHOD AND LASER ANNEALING APPARATUS - An embodiment of the invention provides a laser annealing method, including the steps of radiating a laser beam to an amorphous film on a substrate while scanning the laser beam for the amorphous film, crystallizing the amorphous film, detecting a light quantity of laser beam reflected from the substrate and a scanning speed of the laser beam while the radiation and the scanning of the laser beam are carried out for the amorphous film, and controlling a radiation level and the scanning speed of the laser beam based on results of comparison of the light quantity of laser beam reflected from the substrate, and the scanning speed of the laser beam with respective preset references. | 04-15-2010 |
20110033999 | DOPING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - A doping method includes: a first step of depositing a material solution containing an antimony compound containing elements selected from the group consisting essentially of hydrogen, nitrogen, oxygen, and carbon together with antimony to a surface of a substrate; a second step of drying the material solution to form an antimony compound layer on the substrate; and a third step of performing heat treatment so that antimony in the antimony compound layer is diffused into the substrate. | 02-10-2011 |
20120064420 | POWER GENERATION SYSTEM - There is provided a power generation system capable of obtaining both of electrical energy and heat energy by utilizing light energy. The power generation system includes a gas generation section including one or more containers and producing gas by absorbing light energy, each of the containers enclosing an electrolytic solution and a plurality of semiconductor elements having photoelectric conversion function, a power generation section generating electrical energy by utilizing gas generated in the gas generation section; and a heat exchanger absorbing heat energy from the inside of the container. | 03-15-2012 |
20120306940 | DISPLAY APPARATUS - A display apparatus includes: (i) a glasses-type frame that is mounted on the head of an observer; and (ii) an image display device that is attached to the frame, wherein the image display device includes (A) an image forming device, and (B) an optical device on which light emitted from the image forming device is incident, in which the light is guided, and from which the light is emitted, a light control device that adjusts an amount of external light incident from the outside is provided in a region of the optical device from which light is emitted, and the light control device includes two opposite transparent substrates, electrodes that are provided on the substrates, and an electrophoretic dispersion liquid that is sealed between the two substrates. | 12-06-2012 |
20120320100 | DISPLAY APPARATUS - A display apparatus includes: a spectacle type frame mounted on a head portion of an observer; and an image display apparatus installed in the frame. The image display apparatus includes an image forming device, and an optical device allowing light output from the image forming device to be incident thereon, to be guided therein, and to be output therefrom. A dimmer which adjusts the amount of external light incident from the outside is disposed in an area of the optical device where the light is output. The dimmer includes a first transparent substrate and a second transparent substrate facing the first substrate, first and second electrodes which are mounted on the first and second substrates, respectively, and an electrolyte sealed between the first and second substrates and containing metal ions. The first electrode includes a conductive material of a fine line shape. The second electrode includes a transparent electrode layer. | 12-20-2012 |
20140340286 | DISPLAY DEVICE - There is provided a display device including (I) an eyeglass-shaped frame configured to be mounted on a head of an observer, and (II) an image display device attached to the frame. The image display device includes (A) an image forming device, and (B) an optical device on which light output from the image forming device is incident, in which the light is guided, and from which the light is output. A dimmer configured to adjust an amount of external light incident from outside is installed on a side opposite to a side on which the image forming device of the optical device is disposed. A light shielding member configured to shield incidence of external light on the optical device is disposed in a region of the optical device on which light output from the image forming device is incident. | 11-20-2014 |
20150370075 | DISPLAY DEVICE - A display device comprising a first image display device comprising a light guide plate, a dimmer, and a light control device. The light control device is configured to identify a start time of change in quantity of light received by the display device, and control transmissivity of the dimmer based on quantity of light received by the display device, after a predetermined amount of time after the start time has elapsed. | 12-24-2015 |
Patent application number | Description | Published |
20120193641 | NORMALLY-OFF POWER JFET AND MANUFACTURING METHOD THEREOF - In general, in a semiconductor active element such as a normally-off JFET based on SiC in which an impurity diffusion speed is significantly lower than in silicon, gate regions are formed through ion implantation into the side walls of trenches formed in source regions. However, to ensure the performance of the JFET, it is necessary to control the area between the gate regions thereof with high precision. Besides, there is such a problem that, since a heavily doped PN junction is formed by forming the gate regions in the source regions, an increase in junction current cannot be avoided. The present invention provides a normally-off power JFET and a manufacturing method thereof and forms the gate regions according to a multi-epitaxial method which repeats a process including epitaxial growth, ion implantation, and activation annealing a plurality of times. | 08-02-2012 |
20120193702 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In a SiC-based MISFET and a manufacturing process thereof, after the introduction of an impurity, extremely-high-temperature activation annealing is required. Accordingly, it is difficult to frequently use a self-alignment process as performed in a silicon-based MISFET manufacturing process. This results in the problem that, to control the characteristics of a device, a high-accuracy alignment technique is indispensable. In accordance with the present invention, in a semiconductor device such as a SiC-based vertical power MISFET using a silicon-carbide-based semiconductor substrate and a manufacturing method thereof, a channel region, a source region, and a gate structure are formed in mutually self-aligned relation. | 08-02-2012 |
20130334542 | NORMALLY-OFF POWER JFET AND MANUFACTURING METHOD THEREOF - In general, in a semiconductor active element such as a normally-off JFET based on SiC in which an impurity diffusion speed is significantly lower than in silicon, gate regions are formed through ion implantation into the side walls of trenches formed in source regions. However, to ensure the performance of the JFET, it is necessary to control the area between the gate regions thereof with high precision. Besides, there is such a problem that, since a heavily doped PN junction is formed by forming the gate regions in the source regions, an increase in junction current cannot be avoided. The present invention provides a normally-off power JFET and a manufacturing method thereof and forms the gate regions according to a multi-epitaxial method which repeats a process including epitaxial growth, ion implantation, and activation annealing a plurality of times. | 12-19-2013 |
20150060887 | NORMALLY-OFF POWER JFET AND MANUFACTURING METHOD THEREOF - In general, in a semiconductor active element such as a normally-off JFET based on SiC in which an impurity diffusion speed is significantly lower than in silicon, gate regions are formed through ion implantation into the side walls of trenches formed in source regions. However, to ensure the performance of the JFET, it is necessary to control the area between the gate regions thereof with high precision. Besides, there is such a problem that, since a heavily doped PN junction is formed by forming the gate regions in the source regions, an increase in junction current cannot be avoided. The present invention provides a normally-off power JFET and a manufacturing method thereof and forms the gate regions according to a multi-epitaxial method which repeats a process including epitaxial growth, ion implantation, and activation annealing a plurality of times. | 03-05-2015 |
Patent application number | Description | Published |
20110175967 | ELECTROMECHANICAL TRANSDUCER FILM AND METHOD FOR MANUFACTURING ELECTROMECHANICAL TRANSDUCER FILM - A method for manufacturing an electromechanical transducer film including a lower electrode and plural layers of a sol-gel solution film formed on the lower electrode by an inkjet method, the method including the steps of a) modifying a surface of the lower electrode, b) forming a first sol-gel solution film on the surface of the lower electrode by ejecting droplets of a sol-gel solution to the surface of the lower electrode, and c) forming a second sol-gel solution film on the first sol-gel solution film by ejecting droplets of the sol-gel solution to a surface of the first sol-gel solution film. Adjacent dots formed on the surface of the lower electrode by the droplets ejected in step b) overlap each other. Adjacent dots formed on the surface of the first sol-gel solution film by the droplets ejected in step c) do not overlap each other. | 07-21-2011 |
20120026249 | THIN-FILM FORMING APPARATUS, THIN-FILM FORMING METHOD, PIEZOELECTRIC-ELEMENT FORMING METHOD, DROPLET DISCHARGING HEAD, AND INK-JET RECORDING APPARATUS - A thin-film forming apparatus for forming a thin film on a substrate by using an ink-jet method includes an ink applying unit that applies an ink drop for thin-film formation to a predetermined area on a surface of the substrate; at least one laser light source for heating the ink drop thereby forming a thin film; and a laser-light irradiating unit that irradiates, with a laser light from the laser light source, a first spot positioned on a back side of the predetermined area of the substrate to which the ink drop has been applied. | 02-02-2012 |
20120028075 | THIN FILM MANUFACTURING METHOD AND THIN-FILM ELEMENT - A thin film manufacturing method includes placing a substrate in a raw material solution with which a thin film is formed on a first principal plane of the substrate; forming the thin film on the first principal plane of the substrate by applying light to a first principal plane side from a light source; measuring a distance from the first principal plane of the substrate to a liquid surface of the raw material solution by applying light from the light source; and adjusting a position of the substrate in a height direction on the basis of a measurement result obtained at the measuring. | 02-02-2012 |
20120038712 | METHOD FOR PRODUCING ELECTROMECHANICAL TRANSDUCER, ELECTROMECHANICAL TRANSDUCER PRODUCED BY THE METHOD, LIQUID-DROPLET JETTING HEAD, AND LIQUID-DROPLET JETTING APPARATUS - A method of producing an electromechanical transducer includes a first step of partially modifying a surface of a first electrode; a second step of applying a sol-gel liquid including a metal composite oxide to a predetermined area of the partially-modified surface of the first electrode; a third step of performing drying, thermal decomposition, and crystallization on the applied sol-gel liquid to form an electromechanical transduction film; a fourth step of repeating the first, second, and third steps to obtain the electromechanical transduction film with a desired thickness; and a fifth step of forming a second electrode on the electromechanical transduction film. | 02-16-2012 |
20120206544 | METHOD OF MANUFACTURING ELECTROMECHANICAL TRANSDUCER LAYER, METHOD OF MANUFACTURING ELECTROMECHANICAL TRANSDUCER ELEMENT, ELECTROMECHANICAL TRANSDUCER LAYER FORMED BY THE METHOD, ELECTROMECHANICAL TRANSDUCER ELEMENT, INKJET HEAD AND INKJET RECORDING APPARATUS - Disclosed is a method of manufacturing an electromechanical transducer layer on a surface of a substrate, including discharging a solution including a source material to form the electromechanical transducer layer from a nozzle of a nozzle plate to coat the solution on the surface of the substrate while applying voltage between the nozzle plate and the substrate to charge the nozzle plate at a first polarity and the substrate at a second polarity opposite to the first polarity such that a split droplet split from a main droplet which is coated on the surface of the substrate becomes charged at the second polarity and is attracted and collected by the nozzle plate; and applying a heat treatment to the substrate on which the solution is coated to crystallize the solution to form the electromechanical transducer layer. | 08-16-2012 |
20120236084 | PIEZOELECTRIC ACTUATOR, METHOD OF PRODUCING PIEZOELECTRIC ACTUATOR, AND LIQUID DISCHARGE HEAD - Disclosed is a method of producing a piezoelectric actuator including a first electrode film forming process; a monomolecular film forming process; a pattering process of removing a monomolecular film having a rectangular shape; an application process of applying a precursor solution to the first electrode film exposed in the rectangular shape; a piezoelectric film forming process of converting the applied precursor solution into a piezoelectric film; and a second electrode film forming process. Materials of the precursor solution, the first electrode film, and the monomolecular film are adjusted so that the first electrode film is lyophilic and the monomolecular film is lyophobic to the precursor solution. The piezoelectric film forming process includes a drying and thermally decomposing process of drying and thermally decomposing the precursor solution; and a crystallizing process of crystallizing a thermally decomposed piezoelectric material. | 09-20-2012 |
20120314007 | METHOD OF FORMING ELECTROMECHANICAL TRANSDUCER FILM, ELECTROMECHANICAL TRANSDUCER FILM, ELECTROMECHANICAL TRANSDUCER ELEMENT, AND LIQUID DISCHARGE HEAD - Disclosed is an electromechanical transducer film forming method including a surface modification process; an application process; and processes of drying, thermally decomposing, and crystallizing sol-gel solution applied to a portion of a surface of a first electrode. An electromechanical transducer film is formed on a desired pattern area on the surface of the first electrode by repeating the above processes. In the application process, each of dots of the sol-gel solution applied by the inkjet method drops onto both a first area inside the desired pattern area and a second area outside the desired pattern area. The first area is a hydrophilic area on the surface of the first electrode, and the second area is a hydrophobic area on the surface of the first electrode. The hydrophilic area and the hydrophobic area have been modified by the surface modification process. | 12-13-2012 |
20130070028 | METHOD OF MANUFACTURING ELECTROMECHANICAL TRANSDUCER ELEMENT, ELECTROMECHANICAL TRANSDUCER ELEMENT, DISCHARGING HEAD, AND INKJET RECORDING DEVICE - Disclosed is a method of manufacturing an electromechanical transducer element including a first process of hydrophobizing a first area of an electrode by forming a self-assembled monolayer film; a second process of applying a sol-gel solution onto a predetermined second area of the electrode so as to produce a complex oxide; a third process of producing the complex oxide by calcining the electrode; a fourth process of acid-washing the electrode on which the complex oxide has been produced; a fifth process of hydrophobizing the first area of the acid-washed electrode by forming the self-assembled monolayer film; a sixth process of applying the sol-gel solution onto the predetermined second area; and a seventh process of producing the complex oxide by calcining the electrode. | 03-21-2013 |
20130162726 | ELECTROMECHANICAL TRANSDUCING DEVICE AND MANUFACTURING METHOD THEREOF, AND LIQUID DROPLET DISCHARGING HEAD AND LIQUID DROPLET DISCHARGING APPARATUS - A manufacturing method of an electromechanical transducing device includes forming a vibration plate on a substrate; forming a first electrode made of a metal on the vibration plate; forming a second electrode made of an electrically conductive oxide on the first electrode; coating a surface modification material and carrying out surface modification of only the first electrode; forming an electromechanical transducing film on the second electrode; and forming a third electrode made of an electrically conductive oxide on the electromechanical transducing film. | 06-27-2013 |
20130164436 | THIN FILM MANUFACTURING APPARATUS, THIN FILM MANUFACTURING METHOD, LIQUID DROPLET EJECTING HEAD, AND INKJET RECORDING APPARATUS - A thin film manufacturing apparatus is disclosed, including a liquid ejecting unit which ejects a liquid onto an object on which a film is to be formed and which forms a coating film; a first laser irradiating unit which continuously irradiates a laser light onto the coating film and which evaporates a solvent of the coating film; and a second laser irradiating unit which irradiates a laser light pulse onto the coating film of which the solvent is evaporated and which crystallizes the coating film of which the solvent is evaporated. | 06-27-2013 |
20130169713 | METHOD OF MAKING LIQUID DISCHARGE HEAD, LIQUID DISCHARGE HEAD, LIQUID DISCHARGE APPARATUS HAVING LIQUID DISCHARGE HEAD, AND MANUFACTURING APPARATUS OF LIQUID DISCHARGE HEAD - A method of making a liquid discharge head which includes a nozzle to discharge liquid, a pressure chamber communicating with the nozzle, a pressure chamber substrate to form surfaces of the pressure chamber, and a piezoelectric actuator to apply pressure to liquid in the pressure chamber having a lower electrode, a ferroelectric film, and an upper electrode, includes a silicon wafer supplying process, a position adjustment process, a surface treatment process to reform a surface of the lower electrode, a liquid applying process to apply ferroelectric precursor on the lower electrode by an inkjet method, a heating process to heat the ferroelectric precursor film, and a cooling process. A series of processes from the position adjustment process to the cooling process is iterated to form a ferroelectric film having a predetermined thickness. The series of processes is performed with certain waiting times inserted between key processes. | 07-04-2013 |
20130176364 | ELECTROMECHANICAL TRANSDUCER ELEMENT, LIQUID DISCHARGE HEAD, LIQUID DISCHARGE DEVICE, AND IMAGE FORMING APPARATUS - Disclosed is an electromechanical transducer element including a first electrode disposed on a substrate; an electromechanical transducer film disposed on a first portion of the first electrode; and a second electrode disposed on a second portion of the electromechanical transducer film, wherein an actuator portion formed by laminating the substrate, the first electrode, the electromechanical transducer film, and the second electrode has a stiffness such that, in a cross section of the actuator portion, the stiffness gradually increases from an end portion of the actuator portion to a center portion of the actuator portion. | 07-11-2013 |
20130194350 | THIN FILM FORMING APPARATUS, THIN FILM FORMING METHOD, ELECTRO-MECHANICAL TRANSDUCER ELEMENT, LIQUID EJECTING HEAD, AND INKJET RECORDING APPARATUS - A thin film forming apparatus which automatically forms, on an electrode layer formed on a substrate, a functional thin film which is crystallized from a precursor layer is disclosed, including a water-repellant film forming unit which forms, on a region other than a region on which is to be formed the functional thin film on the electrode layer, a water-repellant film which includes a self-assembled monolayer; an inkjet coating unit which coats, on the region on which is to be formed the functional thin film on the electrode layer, the precursor layer by an inkjet method; and a controller which controls, to within a predetermined time, a time from forming the water-repellant film with the water-repellant film forming unit to coating the precursor layer with the inkjet coating unit. | 08-01-2013 |
20140049582 | ELECTRO-MECHANICAL TRANSDUCER ELEMENT, LIQUID DROPLET EJECTING HEAD, IMAGE FORMING APPARATUS, AND ELECTRO-MECHANICAL TRANSDUCER ELEMENT MANUFACTURING METHOD - An electro-mechanical transducer element is disclosed. The electro-mechanical transducer element includes a first electrode formed on a substrate; an electro-mechanical transducer film formed on at least a part of the first electrode; and a second electrode formed on at least a part of the electro-mechanical transducer film. In at least one cross section of the electro-mechanical transducer film, a film thickness distribution shape is convex to the second electrode side. | 02-20-2014 |
20140210913 | METHOD OF FORMING ELECTROMECHANICAL TRANSDUCER FILM, ELECTROMECHANICAL TRANSDUCER FILM, ELECTROMECHANICAL TRANSDUCER ELEMENT, AND LIQUID DISCHARGE HEAD - Disclosed is an electromechanical transducer film forming method including a surface modification process; an application process; and processes of drying, thermally decomposing, and crystallizing sol-gel solution applied to a portion of a surface of a first electrode. An electromechanical transducer film is formed on a desired pattern area on the surface of the first electrode by repeating the above processes. In the application process, each of dots of the sol-gel solution applied by the inkjet method drops onto both a first area inside the desired pattern area and a second area outside the desired pattern area. The first area is a hydrophilic area on the surface of the first electrode, and the second area is a hydrophobic area on the surface of the first electrode. The hydrophilic area and the hydrophobic area have been modified by the surface modification process. | 07-31-2014 |
20140340854 | ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE ELECTRONIC DEVICE - An electronic device includes a substrate; and a plurality of thin-film elements formed on the substrate. Further, the thin-film element includes a thin-film section having a function selected from a group including piezoelectric effect, inverse piezoelectric effect, charge storage, semiconductivity, and conductivity, and the plurality of thin-film elements includes the thin-film sections having two or more different functions. | 11-20-2014 |
20140375728 | ACTUATOR, METHOD OF MANUFACTURING THE ACTUATOR, AND LIQUID DROPLET EJECTING HEAD, LIQUID DROPLET EJECTING APPARATUS, AND IMAGE FORMING APPARATUS HAVING THE ACTUATOR - An actuator includes a base member and an electro-mechanical transducer element including a first electrode, an electro-mechanical transducer film, and a second electrode. Further, the base member includes a thin wall part having a concave shape, the electro-mechanical transducer film is formed in a manner such that a film thickness of the electro-mechanical transducer film is gradually reduced from a center part of the electro-mechanical transducer film to both end parts of the electro-mechanical transducer film in at least one direction crossing a film thickness direction of the electro-mechanical transducer film. | 12-25-2014 |
20150145924 | FABRICATION METHOD OF ELECTROMECHANICAL TRANSDUCER FILM, ELECTROMECHANICAL TRANSDUCER ELEMENT, LIQUID EJECTION HEAD, AND INKJET RECORDING APPARATUS - Disclosed is a method of fabricating an electromechanical transducer film. The method includes treating a surface of a first electrode to be liquid-repellent, the first electrode being formed on one surface of a substrate, irradiating the surface of the first liquid-repellent electrode with an energy ray while moving an irradiation position in accordance with a shape of the electromechanical transducer film to be formed and a shape of an alignment mark to be formed, and forming the alignment mark by applying an application liquid to an area including a portion irradiated with the energy ray in accordance with the shape of the alignment mark in the irradiating step, the application liquid being applied by an inkjet method. | 05-28-2015 |
20150307403 | PRECURSOR SOL-GEL SOLUTION, ELECTROMECHANICAL TRANSDUCER ELEMENT, LIQUID DROPLET DISCHARGE HEAD, AND INKJET RECORDING APPARATUS - A precursor sol-gel solution is provided that has been subjected to a partial hydrolysis process and is used for forming an oxide dielectric film having a perovskite structure represented by the general formula ABO | 10-29-2015 |
20160049579 | FABRICATION METHOD OF ELECTROMECHANICAL TRANSDUCER FILM, FABRICATION METHOD OF ELECTROMECHANICAL TRANSDUCER ELEMENT, ELECTROMECHANICAL TRANSDUCER ELEMENT, LIQUID EJECTION HEAD, AND IMAGE FORMING APPARATUS - A method of fabricating an electromechanical transducer film includes applying a precursor solution on a support substrate, heating the substrate at a first temperature to form a ceramic thin-film in amorphous state, applying a sol-gel solution onto the ceramic thin-film, and heating the ceramic thin-film at a second temperature to form an electromechanical transducer thin-film in amorphous state. The method further includes heating the ceramic and transducer thin-films at a third temperature to thermally decompose an organic substance in the sol-gel solution and form a unitary thin-film, processing the unitary thin-film to form a patterned unitary thin-film, modifying an area on which the patterned film is not formed, discharging the sol-gel solution onto a surface of the patterned film by a liquid discharge head to apply the sol-gel solution to the surface of the patterned film, and heating the patterned film at a fourth temperature to crystallize the patterned film. | 02-18-2016 |
Patent application number | Description | Published |
20110234836 | SOLID-STATE IMAGE TAKING DEVICE AND ELECTRONIC APPARATUS - Disclosed herein is a solid-state image taking device including a pixel section and a scan driving section wherein on each pixel column included in the pixel area determined in advance to serve as a pixel column having the unit pixels laid out in the scan direction, the opto-electric conversion section and the electric-charge holding section are laid out alternately and repeatedly, and on each of the pixel columns in the pixel area determined in advance, two the electric-charge holding sections of two adjacent ones of the unit pixels are laid out disproportionately toward one side of the scan direction with respect to the optical-path limiting section or the opto-electric conversion section. | 09-29-2011 |
20110241079 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - Disclosed herein is a solid-state imaging device including a photoelectric conversion element operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof, an electric-charge holding region in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is held until read out, and a transfer gate having a complete transfer path through which the electric charge accumulated in the photoelectric conversion element is completely transferred into the electric-charge holding region, and an intermediate transfer path through which the electric charge generated by the photoelectric conversion element during an exposure period and being in excess of a predetermined charge amount is transferred into the electric-charge holding region. The complete transfer path and the intermediate transfer path are formed in different regions. | 10-06-2011 |
20110241089 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - Disclosed herein is a solid-state imaging device including: a semiconductor region of a second conductivity type which is formed on a face side of a semiconductor substrate; a photoelectric conversion element which has an impurity region of a first conductivity type and which is operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof; an electric-charge holding region which has an impurity region of the first conductivity type and in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is held until read out; an intermediate transfer path through which only the electric charge generated by the photoelectric conversion element during an exposure period and being in excess of a predetermined electric charge amount is transferred into the electric-charge holding region; and an impurity layer. | 10-06-2011 |
20110242386 | SOLID-STATE IMAGE PICKUP DEVICE, DRIVING METHOD OF SOLID-STATE IMAGE PICKUP DEVICE, AND ELECTRONIC DEVICE - A solid-state image pickup device includes: a plurality of unit pixels including at least a photoelectric converting section, a charge-to-voltage converting section, and one or more transfer means for transferring a charge in a predetermined path; a light shielding film for shielding a surface of the plurality of unit pixels excluding at least a light receiving section of the photoelectric converting section from light; and voltage controlling means for controlling a voltage applied to the light shielding film; wherein transfer of the charge by one of the transfer means is controlled by controlling the voltage applied to the light shielding film. | 10-06-2011 |
20110248371 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - Provided is a solid-state imaging device including: a first-conductivity-type substrate; a second-conductivity-type well formed in a surface side of the first-conductivity-type substrate; a photoelectric conversion area configured with a first-conductivity-type-impurity area formed in the second-conductivity-type well to convert incident light to charges; a first-conductivity-type-charge retaining area configured with the first-conductivity-type-impurity area formed in the second-conductivity-type well to retain the charges converted by the photoelectric conversion area until the charges are read out; a charge voltage conversion area configured with the first-conductivity-type-impurity area formed in the second-conductivity-type well to convert the charges retained in the charge retaining area to a voltage; and a first-conductivity-type-layer area configured by forming a first-conductivity-type-in a convex shape from a boundary between the first-conductivity-type substrate and the second-conductivity-type well to a predetermined depth of the surface side under at least one portion of the charge retaining area and the charge voltage conversion area. | 10-13-2011 |
20120153126 | SOLID-STATE IMAGING ELEMENT, DRIVING METHOD, AND ELECTRONIC APPARATUS - Disclosed herein is a solid-state imaging element including: a plurality of unit pixels each having a photoelectric conversion part, a transfer part that transfers a charge generated by the photoelectric conversion part to a predetermined region, and a draining part that drains a charge in the predetermined region; a light shielding film being formed under an interconnect layer in the unit pixels and shield, from light, substantially the whole surface of the plurality of unit pixels except a light receiving part of the photoelectric conversion part; and a voltage controller controlling a voltage applied to the light shielding film. The voltage controller sets the voltage applied to the light shielding film to a first voltage in charge draining by the draining part and sets the voltage applied to the light shielding film to a second voltage higher than the first voltage in charge transfer by the transfer part. | 06-21-2012 |
20140084142 | SOLID-STATE IMAGE TAKING DEVICE AND ELECTRONIC APPARATUS - A solid-state image taking device including a pixel section and a scan driving section wherein on each pixel column included in the pixel area determined in advance to serve as a pixel column having the unit pixels laid out in the scan direction, the opto-electric conversion section and the electric-charge holding section are laid out alternately and repeatedly, and on each of the pixel columns in the pixel area determined in advance, two the electric-charge holding sections of two adjacent ones of the unit pixels are laid out disproportionately toward one side of the scan direction with respect to the optical-path limiting section or the opto-electric conversion section. | 03-27-2014 |
20140084143 | SOLID-STATE IMAGING DEVICE, METHOD FOR DRIVING THE SAME, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC DEVICE - A solid-state imaging device includes a photoelectric conversion section configured to generate photocharges and a transfer gate that transfers the photocharges to a semiconductor region. A method for driving a unit pixel includes a step of accumulating photocharges in a photoelectric conversion section and a step of accumulating the photocharges in a semiconductor region. A method of forming a solid-state imaging device includes implanting ions into a well layer through an opening in a mask, implanting additional ions into the well layer through an opening in another mask, and implanting other ions into the well layer through an opening in yet another mask. An electronic device includes the solid-state imaging device. | 03-27-2014 |
20140319323 | SOLID-STATE IMAGING ELEMENT, DRIVING METHOD, AND ELECTRONIC APPARATUS - A solid-state imaging element including: a plurality of unit pixels each having a photoelectric conversion part, a transfer part that transfers a charge generated by the photoelectric conversion part to a predetermined region, and a draining part that drains a charge in the predetermined region; a light shielding film being formed under an interconnect layer in the unit pixels and shield, from light, substantially the whole surface of the plurality of unit pixels except a light receiving part of the photoelectric conversion part; and a voltage controller controlling a voltage applied to the light shielding film. The voltage controller sets the voltage applied to the light shielding film to a first voltage in charge draining by the draining part and sets the voltage applied to the light shielding film to a second voltage higher than the first voltage in charge transfer by the transfer part. | 10-30-2014 |
20150137188 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A solid-state imaging device including a photoelectric conversion element operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof, an electric-charge holding region in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is held until read out, and a transfer gate having a complete transfer path through which the electric charge accumulated in the photoelectric conversion element is completely transferred into the electric-charge holding region, and an intermediate transfer path through which the electric charge generated by the photoelectric conversion element during an exposure period and being in excess of a predetermined charge amount is transferred into the electric-charge holding region. The complete transfer path and the intermediate transfer path are formed in different regions. | 05-21-2015 |
20160006959 | SOLID-STATE IMAGE TAKING DEVICE AND ELECTRONIC APPARATUS - A solid-state image taking device including a pixel section and a scan driving section wherein on each pixel column included in the pixel area determined in advance to serve as a pixel column having the unit pixels laid out in the scan direction, the opto-electric conversion section and the electric-charge holding section are laid out alternately and repeatedly, and on each of the pixel columns in the pixel area determined in advance, two the electric-charge holding sections of two adjacent ones of the unit pixels are laid out disproportionately toward one side of the scan direction with respect to the optical-path limiting section or the opto-electric conversion section. | 01-07-2016 |
Patent application number | Description | Published |
20090285578 | ELECTRONIC APPARATUS - An electronic apparatus is provided and includes a light transmitting module configured to convert an electric signal into an optical signal and emit light, a light receiving module configured to receive the light emitted from the light transmitting module and convert the optical signal into an electric signal, and a mover unit configured to cause at least one of the light transmitting module and the light receiving module to carry out linear movement along an optical axis of the light emitted from the light transmitting module and/or rotation about the optical axis. | 11-19-2009 |
20120002276 | STAGE SYSTEM AND MICROSCOPE - Disclosed herein is a stage system, including: a stage on which to mount a slide glass; a projection block projected more than the thickness of the slide glass to the side of that surface of the stage on which to dispose the slide glass; and a pressing block which is provided on that surface of the stage on which to dispose the slide glass, is thicker than the slide glass, and presses toward the projection block the slide glass disposed between itself and the projection block. | 01-05-2012 |
20120002277 | SLIDE GLASS STORAGE DEVICE, CONVEYING DEVICE AND MICROSCOPE SYSTEM - A slide glass storage device including: a supply tray which has a supply holding space determined by a longer edge upper limit allowed for a longer edge of a slide glass and a shorter edge upper limit allowed for a shorter edge of the slide glass and on which a slide glass to be supplied to a treatment unit operable to perform a predetermined treatment is mounted; a discharge tray which has a discharge holding space determined by a longer edge longer than the longer edge upper limit and a shorter edge longer than the shorter edge upper limit and on which a slide glass having been subjected to the treatment in the treatment unit and being to be discharged is mounted; and a support unit supporting the supply tray and the discharge tray. | 01-05-2012 |
20120003065 | CONVEYING DEVICE, CONVEYING METHOD AND MICROSCOPE SYSTEM - A conveying device including: a storage unit storing two or more sheets of slide glasses to be subjected to a predetermined treatment; a stage holding only one sheet of slide glass to be subjected to the treatment; a supply arm by which one sheet of slide glass to be subjected to the treatment is picked up from the storage unit and supplied onto the stage; a discharge arm by which the slide glass mounted on the stage is picked up and discharged in the storage unit; a moving unit operable to move the supply arm and the discharge arm in an integral manner so as to bring the supply arm or the discharge arm into proximity to each of the storage unit and the stage; and a control unit operable to control the supply arm, the discharge arm and the moving unit. | 01-05-2012 |
20120105488 | IMAGE PROCESSING DEVICE, IMAGE PROCESSING SYSTEM, IMAGE PROCESSING METHOD AND PROGRAM - An image processing apparatus includes a position movement input unit configured to receive a position movement instruction from a user, a pointer movement unit configured to set a position of a pointer that moves in accordance with the instruction, and a screen movement unit configured to scroll a screen based on a relative position of the pointer with respect to a reference point of a predefined area around the pointer, the screen movement unit configured to move the predefined area to keep the pointer inside the predefined area when the pointer is at a border of the predefined area and moves towards an outside of the predefined area. | 05-03-2012 |
20140299979 | SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - The reliability of a semiconductor device is improved. A semiconductor device has a first metal plate and a second metal plate electrically isolated from the first metal plate. Over the first metal plate, a first semiconductor chip including a transistor element formed thereover is mounted. Whereas, over the second metal plate, a second semiconductor chip including a diode element formed thereover is mounted. Further, the semiconductor device has a lead group including a plurality of leads electrically coupled with the first semiconductor chip or the second semiconductor chip. The first and second metal plates are arranged along the X direction in which the leads are arrayed. Herein, the area of the peripheral region of the first semiconductor chip in the first metal plate is set larger than the area of the peripheral region of the second semiconductor chip in the second metal plate. | 10-09-2014 |
20150226662 | MICROSCOPE SYSTEM - A microscope system including: a storage unit storing two or more sheets of slide glasses to be subjected to a predetermined treatment; a stage holding only one sheet of slide glass to be subjected to the treatment; a supply arm by which one sheet of slide glass to be subjected to the treatment is picked up from the storage unit and supplied onto the stage; a discharge arm by which the slide glass mounted on the stage is picked up and discharged in the storage unit; a moving unit operable to move the supply arm and the discharge arm in an integral manner so as to bring the supply arm or the discharge arm into proximity to each of the storage unit and the stage; and a control unit operable to control the supply arm, the discharge arm and the moving unit. | 08-13-2015 |