Patent application number | Description | Published |
20100171135 | Optoelectronic Semiconductor Body and Method for Producing the Same - The invention relates to an opto-electronic semiconductor body having a semiconductor layer sequence ( | 07-08-2010 |
20100230698 | Optoelectronic Semiconductor Body - An optoelectronic semiconductor body includes a substrate with a front side for emitting electromagnetic radiation. The optoelectronic semiconductor body has a semiconductor layer sequence that is arranged on a rear side of the substrate and has an active layer suitable for generating the electromagnetic radiation. The optoelectronic semiconductor body also includes first and second electrical connection layers that are arranged on a first surface of the semiconductor body that faces away from the substrate. | 09-16-2010 |
20110012088 | OPTOELECTRONIC SEMICONDUCTOR BODY WITH A TUNNEL JUNCTION AND METHOD FOR PRODUCING SUCH A SEMICONDUCTOR BODY - An optoelectronic semiconductor body includes an epitaxial semiconductor layer sequence including a tunnel junction including an intermediate layer between an n-type tunnel junction layer and a p-type tunnel junction layer, wherein the intermediate layer has an n-barrier layer facing the n-type tunnel junction layer, a p-barrier layer facing the p-type tunnel junction layer, and a middle layer with a material composition differing from material compositions of the n-barrier layer and the p-barrier layer; and an active layer that emits electromagnetic radiation. | 01-20-2011 |
20110049555 | Optoelectronic Semiconductor Chip and Method for Producing Same - An optoelectronic semiconductor chip has a semiconductor layer sequence having an active layer that generates radiation between a layer of a first conductivity type and a layer of a second conductivity type. The layer of the first conductivity type is adjacent to a front side of the semiconductor layer sequence. The semiconductor layer sequence contains at least one cutout extending from a rear side, lying opposite the front side, of the semiconductor layer sequence through the active layer to the layer of the first conductivity type. The layer of the first conductivity type is electrically connected through the cutout by means of a first electrical connection layer which covers the rear side of the semiconductor layer sequence at least in places. | 03-03-2011 |
20110114988 | Led Chip - A light-emitting diode chip ( | 05-19-2011 |
20110272728 | Radiation-Emitting Semiconductor Chip - A radiation-emitting semiconductor chip ( | 11-10-2011 |
20110278641 | METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP AND OPTOELECTRONIC SEMICONDUCTOR CHIP - An optoelectronic semiconductor chip includes a semiconductor layer sequence having at least one doped functional layer having at least one dopant and at least one codopant, wherein the semiconductor layer sequence includes a semiconductor material having a lattice structure, one selected from the dopant and the codopant is an electron acceptor and the other an electron donor, the codopant is bonded to the semiconductor material and/or arranged at interstitial sites, and the codopant at least partly forms no bonding complexes with the dopant. | 11-17-2011 |
20110284893 | Optoelectronic Semiconductor Chip - A description is given of an optoelectronic semiconductor chip ( | 11-24-2011 |
20130043496 | LIGHTING DEVICE - A lighting device with front carrier, rear carrier and plurality of light-emitting diode chips, which when in operation emits light and releases waste heat, wherein rear carrier is covered at least in selected locations by front carrier, light-emitting diode chips are arranged between rear carrier and front carrier to form array, light-emitting diodes are contacted electrically by rear and/or front carrier and immobilized mechanically by rear carrier and front carrier, front carrier is coupled thermally conductively to light-emitting diode chips and includes light outcoupling face remote from light-emitting diode chips, which light outcoupling face releases some of waste heat released by light-emitting diode chips into surrounding environment, each light-emitting diode chip is actuated with electrical nominal power of 100 mW or less when lighting device is in operation and has light yield of 100 lm/W or more. | 02-21-2013 |
20130187192 | Optoelectronic Component and Method for the Production Thereof - An optoelectronic component has a semiconductor chip and a carrier, which is bonded to the semiconductor chip by means of a bonding layer of a metal or a metal alloy. The semiconductor chip includes electrical connection regions facing the carrier and the carrier includes electrical back contacts on its back remote from the semiconductor chip. The back contacts are connected electrically conductively to the first electrical or second connection region respectively, in each case by at least one via extending through the carrier. The first and/or second electrical back contact is connected to the first or second electrical connection region respectively by at least one further via extending through the carrier. | 07-25-2013 |
20130221392 | Optoelectronic Semiconductor Body and Method for Producing the Same - An optoelectronic semiconductor body includes a semiconductor layer sequence which has an active layer suitable for generating electromagnetic radiation, and a first and a second electrical connecting layer. The semiconductor body is provided for emitting electromagnetic radiation from a front side. The first and the second electrical connecting layer are arranged at a rear side opposite the front side and are electrically insulated from one another by means of a separating layer. The first electrical connecting layer, the second electrical connecting layer and the separating layer laterally overlap and a partial region of the second electrical connecting layer extends from the rear side through a breakthrough in the active layer in the direction of the front side. Furthermore, a method for producing such an optoelectronic semiconductor body is specified. | 08-29-2013 |
20130228819 | Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip includes a semiconductor layer sequence and a carrier substrate. A first and a second electrical contact layer are arranged at least in regions between the carrier substrate and the semiconductor layer sequence and are electrically insulated from one another by an electrically insulating layer. A mirror layer is arranged between the semiconductor layer sequence and the carrier substrate. The minor layer adjoins partial regions of the first electrical contact layer and partial regions of the electrically insulating layer. The partial regions of the electrically insulating layer which adjoin the mirror layer are covered by the second electrical contact layer in such a way that at no point do they adjoin a surrounding medium of the optoelectronic semiconductor chip. | 09-05-2013 |
20130313604 | Method for Producing a Light-Emitting Semiconductor Component and Light-Emitting Semiconductor Component - A method for producing a light-emitting semiconductor component is specified. A light-emitting semiconductor chip is arranged on a mounting area of a carrier. The semiconductor chip is electrically connected to electrical contact regions on the mounting area. An encapsulation layer is applied to the semiconductor chip by means of atomic layer deposition. All surfaces of the semiconductor chip which are free after mounting and electrical connection are covered with an encapsulation layer. Furthermore, a light-emitting semiconductor component is specified. | 11-28-2013 |
20140319547 | METHOD OF PRODUCING A PLURALITY OF OPTOELECTRONIC SEMICONDUCTOR CHIPS, AND OPTOELECTRONIC SEMICONDUCTOR CHIP - A method of producing a plurality of optoelectronic semiconductor chips includes a) providing a layer composite assembly having a principal plane which delimits the layer composite assembly in a vertical direction, and includes a semiconductor layer sequence having an active region that generates and/or detects radiation, wherein a plurality of recesses extending from the principal plane in a direction of the active region are formed in the layer composite assembly; b) forming a planarization layer on the principal plane such that the recesses are at least partly filled with material of the planarization layer; c) at least regionally removing material of the planarization layer to level the planarization layer; and d) completing the semiconductor chips, wherein for each semiconductor chip at least one semiconductor body emerges from the semiconductor layer sequence. | 10-30-2014 |