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Luo, Hsinchu
Boren Luo, Hsinchu TW
| Patent application number | Description | Published |
|---|---|---|
| 20110230998 | MODEL IMPORT FOR ELECTRONIC DESIGN AUTOMATION - Methods and systems for providing processing parameters in a secure format are disclosed. In one aspect, a method for providing semiconductor fabrication processing parameters to a design facility is disclosed. The method comprises providing a set of processing parameters of a fabrication facility; creating a model from the set of processing parameters; converting the model into a corresponding set of kernels; converting the set of kernels into a corresponding set of matrices; and communicating the set of matrices to the design facility. In another aspect, a method for providing semiconductor fabrication processing parameters is disclosed. The method comprises providing a set of processing parameters of a fabrication facility; creating a processing model from the set of processing parameters; encrypting the processing model into a format for use with a plurality of EDA tools; and communicating the encrypted processing model format to a design facility. | 09-22-2011 |
| 20110231804 | MODEL IMPORT FOR ELECTRONIC DESIGN AUTOMATION - Methods and systems for providing processing parameters in a secure format are disclosed. In one aspect, a method for providing semiconductor fabrication processing parameters to a design facility is disclosed. The method comprises providing a set of processing parameters of a fabrication facility; creating a model from the set of processing parameters; converting the model into a corresponding set of kernels; converting the set of kernels into a corresponding set of matrices; and communicating the set of matrices to the design facility. In another aspect, a method for providing semiconductor fabrication processing parameters is disclosed. The method comprises providing a set of processing parameters of a fabrication facility; creating a processing model from the set of processing parameters; encrypting the processing model into a format for use with a plurality of EDA tools; and communicating the encrypted processing model format to a design facility. | 09-22-2011 |
Guang-Li Luo, Hsinchu TW
| Patent application number | Description | Published |
|---|---|---|
| 20090221144 | Manufacturing method for nano scale Ge metal structure - Manufacturing methods for nano scale Ge include: Form dielectric layer on the substrate surface, then etch the dielectric layer to form openings of three different dimensions, then use chemical vapor deposition process to deposit Ge metal layer to cover the substrate, dielectric layer and the openings; then on the opening of three different dimensions, nano-dot, nano-disk and nano-ring are formed. | 09-03-2009 |
Huan Chin Luo, Hsinchu TW
| Patent application number | Description | Published |
|---|---|---|
| 20110149533 | INTEGRATED CIRCUIT FILM FOR SMART CARD - An integrated circuit (IC) film for a smart card is provided. The IC film includes a flexible printed circuit (FPC) board, first electrical contacts, second electrical contacts, and an IC chip. The first electrical contacts are disposed on a first side of the FPC board, and the second electrical contacts are disposed on a second side of the FPC board. The IC chip is disposed on the FPC board and bonded to the leads of the FPC board to thereby form electrical connection. The total thickness of the FPC board and the chip is not larger than 0.5 mm. | 06-23-2011 |
Ruei-Liang Luo, Hsinchu TW
| Patent application number | Description | Published |
|---|---|---|
| 20090294684 | ULTRAVIOLET INTENSITY DETECTING METHOD, FABRICATING DISPLAY APPARATUS METHOD AND DISPLAY APPARATUS USING THE SAME - A display apparatus is provided. The display apparatus is used for detecting an ultraviolet (UV) intensity. The display apparatus includes a lower-substrate, an upper-substrate and a processing unit. The lower-substrate includes a first, a second and a third photo sensors for detecting an intensity of the light in a first, a second and a third bands and converting the intensity of the light in the first, the second and the third bands into a first, a second and a third currents respectively, wherein the ranges of the second and the third bands are comprised within the range of the first band. The upper-substrate is disposed opposite to the lower-substrate. The processing unit is coupled to the first, the second and the third photo sensors, for receiving and processing the first, the second and the third currents so as to obtain the UV intensity. | 12-03-2009 |
Shing-Ann Luo, Hsinchu TW
| Patent application number | Description | Published |
|---|---|---|
| 20090008703 | NON-VOLATILE MEMORY CELL AND FABRICATING METHOD THEREOF - A super-silicon-rich oxide (SSRO) non-volatile memory cell includes a gate conductive layer on a substrate, a source/drain in the substrate at respective sides of the gate conductive layer, a tunneling dielectric layer between the gate conductive layer and the substrate, a SSRO layer serving as a charge trapping layer between the gate conductive layer and the tunneling dielectric layer, and an upper-dielectric layer between the gate conductive layer and the SSRO layer. | 01-08-2009 |
| 20090033915 | APC SYSTEM AND MULTIVARIATE MONITORING METHOD FOR PLASMA PROCESS MACHINE - An advance process control (APC) system for a plasma process machine is provided, which includes at least an optical emission spectroscopy (OES) system and an APC analysis apparatus. The OES system is used for monitoring a testing object in the plasma process machine. The APC analysis apparatus is used for analyzing the data received from the OES system. | 02-05-2009 |
| 20090299668 | APC SYSTEM AND MULTIVARIATE MONITORING METHOD FOR PLASMA PROCESS MACHINE - An advance process control (APC) system for a plasma process machine is provided, which includes at least an optical emission spectroscopy (OES) system and an APC analysis apparatus. The OES system is used for monitoring a testing object in the plasma process machine. The APC analysis apparatus is used for analyzing the data received from the OES system. | 12-03-2009 |
| 20100041245 | HDP-CVD PROCESS, FILLING-IN PROCESS UTILIZING HDP-CVD, AND HDP-CVD SYSTEM - An HDP-CVD process is described, including a deposition step conducted in an HDP-CVD chamber and a pre-heating step that is performed outside of the HDP-CVD chamber before the deposition step and pre-heats a wafer to a temperature higher than room temperature and required in the HDP-CVD process deposition step. | 02-18-2010 |
| 20100252878 | NON-VOLATILE MEMORY CELL - A super-silicon-rich oxide (SSRO) non-volatile memory cell includes a gate conductive layer on a substrate, a source/drain in the substrate at respective sides of the gate conductive layer, a tunneling dielectric layer between the gate conductive layer and the substrate, a SSRO layer serving as a charge trapping layer between the gate conductive layer and the tunneling dielectric layer, and an upper-dielectric layer between the gate conductive layer and the SSRO layer. | 10-07-2010 |
| 20120000423 | HDP-CVD SYSTEM - An HDP-CVD system is described, including an HDP-CVD chamber for depositing a material on a wafer, and a pre-heating chamber disposed outside of the HDP-CVD chamber to pre-heat the wafer, before the wafer is loaded in the HDP-CVD chamber, to a temperature higher than room temperature and required in the deposition step to be conducted in the HDP-CVD chamber. The pre-heating chamber is equipped with a heating lamp for the pre-heating. The wafer has been formed with a trench before being pre-heated. | 01-05-2012 |
Tian-Shuan Luo, Hsinchu TW
| Patent application number | Description | Published |
|---|---|---|
| 20100176434 | DATA STORAGE STRUCTURE, MEMORY DEVICE AND PROCESS FOR FABRICATING MEMORY DEVICE - A memory device is described, including a substrate, data storage structures over the substrate, control gates over the data storage structures, and a dielectric layer between the data storage structures and the control gates, wherein each data storage structure includes a lower part and an upper part narrower than the lower part. A process for fabricating the memory device is also described, wherein formation of the data storage structures includes recessing portions of a data storage layer to form respective upper parts of the data storage structures and then dividing the recessed portions of the data storage layer to form respective lower parts of the data storage structures. | 07-15-2010 |
Tseng Chin Luo, Hsinchu TW
| Patent application number | Description | Published |
|---|---|---|
| 20120074981 | METHOD AND APPARATUS FOR DEVICE PARAMETER MEASUREMENT - A method of measuring a parameter of a device in a circuit includes providing a device under test (DUT). The DUT includes a metal oxide semiconductor (MOS) transistor having a gate, a source, and a drain coupled to a first voltage supply node. The method further includes coupling a constant current source to the source of the transistor, coupling an operational amplifier to the transistor, and measuring a parameter of the transistor. | 03-29-2012 |
Tzuo-Liang Luo, Hsinchu TW
| Patent application number | Description | Published |
|---|---|---|
| 20090139964 | WIRE-RECEIVING MECHANISM - A wire-receiving mechanism for holding electrical wire used to cut or burn through a metal work piece in wire electrical discharge machines (WEDMs) is disclosed. A passive wheel and an active wheel are disposed side by side with one another in a case body, the active wheel being capable of causing the passive wheel to rotate, wherein one side of the passive wheel has a driving unit defined thereon. The driving unit is disposed to penetrate through one side of the case body, and includes a driving member disposed to one side of the case body, an action member connected to the driving member and a sliding member connected to the action member for pushing the passive wheel, wherein a pretension spring is disposed at one side of the sliding member for controlling the gap between the passive wheel and the active wheel such that the processing wires can be stably held and conveyed. | 06-04-2009 |
| 20100103764 | WORKING TROUGH AND METHOD FOR MAINTAINING UNIFORM TEMPERATURE OF WORKING FLUID - The invention provides a working trough and a method for maintaining a uniform temperature of a working fluid. The working trough is applied to an electrical discharge machine that performs wire cutting using the working fluid. The method for maintaining a uniform temperature of the working fluid is applied to the working trough and characterized by forming opening structures in a receiving slot of the working trough such that a spiral swirl having a predetermined height is allowed to be formed in the working fluid, thereby maintaining a uniform temperature of the working fluid in the receiving slot when a wire cutting process is performed in the working fluid by the electrical discharge machine. The disturbance of the spiral swirl also facilitates the discharge of scraps. The present invention further has an advantage of low cost. | 04-29-2010 |
Yuan-Syun Luo, Hsinchu TW
| Patent application number | Description | Published |
|---|---|---|
| 20110029992 | Casing assembling structure of optical disc drive - A casing assembling structure of an optical disc drive is provided to comprise a bottom cover; a top cover combined with the bottom cover to form a space, wherein the top cover has a first side wall and a fixing portion, which is extended from the first side wall and is positioned under the bottom cover; and a first screw screwed on the fixing portion, wherein the top cover, the first side wall and the fixing portion are formed as a integral. | 02-03-2011 |