Patent application number | Description | Published |
20090041951 | MAGNETIC ENHANCEMENT FOR MECHANICAL CONFINEMENT OF PLASMA - A method for processing a substrate is provided. The substrate is placed in a process chamber. A gas is provided from a gas source to the process chamber. A plasma is generated from the gas in the process chamber. The gas flows through a gap adjacent to at least one confinement ring to provide physical confinement of the plasma. Magnetic confinement of the plasma is provided to enhance the physical confinement of the plasma. | 02-12-2009 |
20090174983 | ELECTROSTATIC CHUCK ASSEMBLY WITH DIELECTRIC MATERIAL AND/OR CAVITY HAVING VARYING THICKNESS, PROFILE AND/OR SHAPE, METHOD OF USE AND APPARATUS INCORPORATING SAME - An electrostatic chuck assembly having a dielectric material and/or having a cavity with varying thickness, profile and/or shape is disclosed. The electrostatic chuck assembly includes a conductive support and an electrostatic chuck ceramic layer. A dielectric layer or insert is located between the conductive support and an electrostatic chuck ceramic layer. A cavity is located in a seating surface of the electrostatic chuck ceramic layer. An embedded pole pattern can be optionally incorporated in the electrostatic chuck assembly. Methods of manufacturing the electrostatic chuck assembly are disclosed as are methods to improve the uniformity of a flux field above a workpiece during a plasma processing process. | 07-09-2009 |
20090215272 | DOUBLE MASK SELF-ALIGNED DOUBLE PATTERNING TECHNOLOGY (SADPT) PROCESS - A method for providing features in an etch layer is provided by forming an organic mask layer over the inorganic mask layer, forming a silicon-containing mask layer over the organic mask layer, forming a patterned mask layer over the silicon-containing mask layer, etching the silicon-containing mask layer through the patterned mask, depositing a polymer over the etched silicon-containing mask layer, depositing a silicon-containing film over the polymer, planarizing the silicon-containing film, selectively removing the polymer leaving the silicon-containing film, etching the organic layer, and etching the inorganic layer. | 08-27-2009 |
20100124822 | APPARATUSES FOR ADJUSTING ELECTRODE GAP IN CAPACITIVELY-COUPLED RF PLASMA REACTOR - A plasma processing chamber includes a cantilever assembly configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall. | 05-20-2010 |
20100126847 | Apparatus and Method for Controlling Plasma Density Profile - A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate. | 05-27-2010 |
20110024045 | Apparatus and Method for Controlling Plasma Potential - A chamber includes a lower electrode and an upper electrode. The lower electrode is defined to transmit a radiofrequency current through the chamber and to support a semiconductor wafer in exposure to a plasma within the chamber. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is electrically isolated from the chamber and is defined by a central section and one or more annular sections disposed concentrically outside the central section. Adjacent sections of the upper electrode are electrically separated from each other by a dielectric material. Multiple voltage sources are respectively connected to the upper electrode sections. Each voltage source is defined to control an electric potential of the upper electrode section to which it is connected, relative to the chamber. The electric potential of each upper electrode section influences an electric potential of the plasma within the chamber. | 02-03-2011 |
20110024046 | Apparatus and Method for Controlling Plasma Potential - An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The lower electrode is also defined to support a semiconductor wafer in exposure to the plasma. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is defined by a doped semiconductor material. A doping concentration within the upper electrode varies radially from a center to a periphery of the upper electrode. The electric potential of the upper electrode influences an electric potential of the plasma within the chamber. | 02-03-2011 |
Patent application number | Description | Published |
20080240933 | Two-pump air compressor - A compressor system is disclosed utilizing a first pump driven by an A/C motor and a second pump driven by a D/C motor. A gauge is provided which measures pressure from the system. The gauge utilizes a rotatable bezel which allows an operator to selectively choose the output pressure of the compressor system. The gauge provides a shut-off mechanism for disengaging one of the pumps when a predetermined pressure is reached within the system. | 10-02-2008 |
20110123353 | AIR COMPRESSOR WITH SHUT-OFF MECHANISM - A compressor system is disclosed, comprising a first pump driven by a D/C motor, a second pump driven by an A/C motor, and a switch which allows a user to manually selectively engage of one of the D/C motor or A/C motor, including a gauge having a user settable shut-off mechanism which interrupts power to at least one of D/C or A/C motors. Also disclosed is a gauge configured to display system pressure independent of the user settable shut-off mechanism. A gauge having a rotatable bezel with a needle stop comprising a first needle rotatably coupled to a gauge shaft, and a second needle fixable coupled to the gauge shaft, and a spring disposed between the first and second needles, the spring configured to bias the first needle into the second needle so changes in pressure causes rotation of both is also disclosed. | 05-26-2011 |
20130266455 | Air Compressor With Shut-Off Mechanism - A compressor system is disclosed, comprising a first pump driven by a D/C motor, a second pump driven by an A/C motor, and a switch which allows a user to manually selectively engage of one of the D/C motor or A/C motor, including a gauge having a user settable shut-off mechanism which interrupts power to at least one of D/C or A/C motors. Also disclosed is a gauge configured to display system pressure independent of the user settable shut-off mechanism. A gauge having a rotatable bezel with a needle stop comprising a first needle rotatably coupled to a gauge shaft, and a second needle fixable coupled to the gauge shaft, and a spring disposed between the first and second needles, the spring configured to bias the first needle into the second needle so changes in pressure causes rotation of both is also disclosed. | 10-10-2013 |