Patent application number | Description | Published |
20080253161 | SEQUENCE OF CURRENT PULSES FOR DEPINNING MAGNETIC DOMAIN WALLS - A method and structure for depinning a domain wall that is in spatial confinement by a pinning potential to within a local region of a magnetic device. At least one current pulse applied to the domain has a pulse length sufficiently close to a precession period of the domain wall motion and the current pulses are separated by a pulse interval sufficiently close to the precession period such that: the at least one current pulse causes a depinning of the domain wall such that the domain wall escapes the spatial confinement; and each current pulse has an amplitude less than the minimum amplitude of a direct current that would cause the depinning if the direct current were applied to the domain wall instead of the at least one current pulse. The pulse length and pulse interval may be in a range of 25% to 75% of the precession period. | 10-16-2008 |
20090103347 | SEQUENCE OF CURRENT PULSES FOR DEPINNING MAGNETIC DOMAIN WALLS - A method and structure for depinning a domain wall that is in spatial confinement by a pinning potential to within a local region of a magnetic device. At least one current pulse applied to the domain has a pulse length sufficiently close to a precession period of the domain wall motion and the current pulses are separated by a pulse interval sufficiently close to the precession period such that: the at least one current pulse causes a depinning of the domain wall such that the domain wall escapes the spatial confinement; and each current pulse has an amplitude less than the minimum amplitude of a direct current that would cause the depinning if the direct current were applied to the domain wall instead of the at least one current pulse. The pulse length and pulse interval may be in a range of 25% to 75% of the precession period. | 04-23-2009 |
20100046268 | MAGNETIC RACETRACK WITH CURRENT-CONTROLLED MOTION OF DOMAIN WALLS WITHIN AN UNDULATING ENERGY LANDSCAPE - A method for use with a magnetic racetrack device includes placing domain walls having a first structure and domain walls having a second, different structure along the racetrack at stable positions corresponding to different regions within the device. The domain walls having the first structure and the domain walls having the second structure occupy alternating positions along the racetrack. A current pulse is applied to the racetrack, so that each of the domain walls moves to an adjacent region. This results in a transformation of the domain walls having the first structure into domain walls having the second structure, and vice versa. The first structure may be a vortex structure and the second structure may be a transverse structure. | 02-25-2010 |
20140009993 | DOMAIN WALL MOTION IN PERPENDICULARLY MAGNETIZED WIRES HAVING MAGNETIC MULTILAYERS WITH ENGINEERED INTERFACES - Magnetic wires that include cobalt, nickel, and platinum layers show improved domain wall motion properties, when the domain walls are driven by pulses of electrical current. These wires exhibit perpendicular magnetic anisotropy, thereby supporting the propagation of narrow domain walls. The direction of motion of the domain walls can be influenced by the order in which the platinum and cobalt layers are arranged. | 01-09-2014 |
20140009994 | DOMAIN WALL MOTION IN PERPENDICULARLY MAGNETIZED WIRES HAVING ARTIFICIAL ANTIFERROMAGNETICALLY COUPLED MULTILAYERS WITH ENGINEERED INTERFACES - Magnetic wires that include two antiferromagnetically coupled magnetic regions show improved domain wall motion properties, when the domain walls are driven by pulses of electrical current. The magnetic regions preferably include Co, Ni, and Pt and exhibit perpendicular magnetic anisotropy, thereby supporting the propagation of narrow domain walls. The direction of motion of the domain walls can be influenced by the order in which the wire's layers are arranged. | 01-09-2014 |
20140126280 | MULTIPLE BIT NONVOLATILE MEMORY BASED ON CURRENT INDUCED DOMAIN WALL MOTION IN A NANOWIRE MAGNETIC TUNNEL JUNCTION - A mechanism is provided for storing multiple bits in a domain wall nanowire magnetic junction device. The multiple bits are encoded based on a resistance of the domain wall nanowire magnetic junction device using a single domain wall. The single domain wall is shifted to change the resistance of the domain wall nanowire magnetic junction device to encode a selected bit. The resistance is checked to ensure that it corresponds to a preselected resistance for the selected bit. Responsive to the resistance corresponding to the preselected resistance for the selected bit, he selected bit is stored. Responsive to the resistance not being the preselected resistance for the selected bit, the single domain wall is shifted until the resistance corresponds to the preselected resistance. | 05-08-2014 |
20140126281 | MULTIPLE BIT NONVOLATILE MEMORY BASED ON CURRENT INDUCED DOMAIN WALL MOTION IN A NANOWIRE MAGNETIC TUNNEL JUNCTION - A mechanism is provided for storing multiple bits in a domain wall nanowire magnetic junction device. The multiple bits are encoded based on a resistance of the domain wall nanowire magnetic junction device using a single domain wall. The single domain wall is shifted to change the resistance of the domain wall nanowire magnetic junction device to encode a selected bit. The resistance is checked to ensure that it corresponds to a preselected resistance for the selected bit. Responsive to the resistance corresponding to the preselected resistance for the selected bit, he selected bit is stored. Responsive to the resistance not being the preselected resistance for the selected bit, the single domain wall is shifted until the resistance corresponds to the preselected resistance. | 05-08-2014 |
20140160829 | METHOD AND APPARATUS FOR CONTROLLED APPLICATION OF OERSTED FIELD TO MAGNETIC MEMORY STRUCTURE - An apparatus for applying Oersted fields to a magnetic memory device comprises a first metal layer; a first insulating layer positioned on the first metal layer; a magnetic shift register wire positioned on the first insulating layer; a second insulating layer positioned on the magnetic shift register wire; a second metal layer positioned on the second insulating layer; a first conducting wire positioned in the first metal layer and extending transverse to the magnetic shift register wire; and a second conducting wire positioned in the second metal layer and extending transverse to the magnetic shift register wire. The first conducting wire is offset relative to the second conducting wire, the offset being defined by a distance between a first axis normal to the magnetic shift register wire and through the first conducting wire and a second axis normal to the magnetic shift register wire and through the second conducting wire. | 06-12-2014 |