| Patent application number | Description | Published |
|---|
| 20080224214 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD - The present invention provides an SOI device which has high breakdown voltage, wide stable operation range, good thermal dissipation, and high effective conductance and good frequency characteristics, and a method for fabricating the device. In a semiconductor device, a BOX region is formed on a part of a surface layer of a p substrate. The BOX region is formed around a point where a vertical line is dropped from the center of the gate structure portion, and isolates a drain region and an extended drain region from the p | 09-18-2008 |
| 20080258211 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - In a MIS-type semiconductor device having a trench gate structure, a withstand voltage is ensured without changing the thickness of a drift layer and on-resistance can be reduced without applying a high gate drive voltage. The lower half of a trench extending through a p-base region into an n-drift region is filled with a high-permittivity dielectric having a relative permittivity that is higher than that of a silicon oxide film, preferably a silicon nitride film, and an insulated gate structure including a gate insulator and a gate electrode is fabricated on the high-permittivity dielectric. The depth d | 10-23-2008 |
| 20090008675 | SOI TRENCH LATERAL IGBT - To enable driving at a high withstand voltage and a large current, increase latchup immunity, and reduce ON resistance per unit area in an IGBT, a trench constituted by an upper stage trench and a lower stage trench is formed over an entire wafer surface between an n | 01-08-2009 |
| 20090050932 | SEMICONDUCTOR DEVICE AND THE METHOD OF MANUFACTURING THE SAME - To provide a semiconductor device that exhibits a high breakdown voltage, excellent thermal properties, a high latch-up withstanding capability and low on-resistance. The semiconductor device according to the invention, which includes a buried insulator region | 02-26-2009 |
| 20090194785 | Semiconductor device and manufacturing method thereof - A p-type body region and an n-type buffer region are formed on an n | 08-06-2009 |
| 20090242930 | SEMICONDUCTOR DEVICE - A lateral high-breakdown voltage semiconductor device is provided in which the breakdown voltages of elements as a whole are improved, while suppressing increases in cell area. A track-shape gate electrode surrounds a collector electrode extending in a straight line, a track-shape emitter electrode surrounds the gate electrode, and a track-shape first isolation trench surrounds the emitter electrode. A second isolation trench surrounds the first isolation trench. The region between the first isolation trench and the second isolation trench is an n-type isolation silicon region. The isolation silicon region is at the same potential as the emitter electrode. In the cross-sectional configuration traversing the gate electrode, the depth of the p base region in an interval corresponding to an arc-shape portion of the gate electrode is shallower than the depth of the p base region in an interval corresponding to a straight-line portion of the gate electrode. | 10-01-2009 |
| 20110233714 | SEMICONDUCTOR DEVICE - Aspects of the invention are related to a semiconductor device including a first conductivity type n-type drift layer, a second conductivity type VLD region which is formed on a chip inner circumferential side of a termination structure region provided on one principal surface of the n-type drift layer and which is higher in concentration than the n-type drift layer, and a second conductivity type first clip layer which is formed on a chip outer circumferential side of the VLD region so as to be separated from the VLD region and which is higher in concentration than the n-type drift layer. The invention can also include a first conductivity type channel stopper layer which is formed on a chip outer circumferential side of the first clip layer so as to be separated from the first clip layer and which is higher in concentration than the n-type drift layer. | 09-29-2011 |
