| Patent application number | Description | Published |
|---|
| 20080224242 | PROCESS FOR MANUFACTURING A MEMBRANE OF SEMICONDUCTOR MATERIAL INTEGRATED IN, AND ELECTRICALLY INSULATED FROM, A SUBSTRATE - A process for manufacturing an integrated membrane made of semiconductor material includes the step of forming, in a monolithic body of semiconductor material having a front face, a buried cavity, extending at a distance from the front face and delimiting with the front face a surface region of the monolithic body, the surface region forming a membrane that is suspended above the buried cavity. The process further envisages the step of forming an insulation structure in a surface portion of the monolithic body to electrically insulate the membrane from the monolithic body; and the further and distinct step of setting the insulation structure at a distance from the membrane so that it will be positioned outside the membrane at a non-zero distance of separation. | 09-18-2008 |
| 20080261345 | METHOD FOR MANUFACTURING A SEMICONDUCTOR PRESSURE SENSOR - Method for manufacturing a semiconductor pressure sensor, wherein, in a silicon substrate, trenches are dug and delimit walls; a closing layer is epitaxially grown, that closes the trenches at the top and forms a suspended membrane; a heat treatment is performed so as to cause migration of the silicon of the walls and to form a closed cavity underneath the suspended membrane; and structures are formed for transducing the deflection of the suspended membrane into electrical signals. | 10-23-2008 |
| 20080272447 | METHOD FOR MANUFACTURING A MICRO-ELECTRO-MECHANICAL DEVICE, IN PARTICULAR AN OPTICAL MICROSWITCH, AND MICRO-ELECTRO-MECHANICAL DEVICE THUS OBTAINED - A method for manufacturing a micro-electro-mechanical device, which has supporting parts and operative parts, includes providing a first semiconductor wafer, having a first layer of semiconductor material and a second layer of semiconductor material arranged on top of the first layer, forming first supporting parts and first operative parts of the device in the second layer, forming temporary anchors in the first layer, and bonding the first wafer to a second wafer, with the second layer facing the second wafer. After bonding the first wafer and the second wafer together, second supporting parts and second operative parts of said device are formed in the first layer. The temporary anchors are removed from the first layer to free the operative parts formed therein. | 11-06-2008 |
| 20080315333 | SUBSTRATE-LEVEL ASSEMBLY FOR AN INTEGRATED DEVICE, MANUFACTURING PROCESS THEREOF AND RELATED INTEGRATED DEVICE - A substrate-level assembly having a device substrate of semiconductor material with a top face and housing a first integrated device, including a buried cavity formed within the device substrate, and with a membrane suspended over the buried cavity in the proximity of the top face. A capping substrate is coupled to the device substrate above the top face so as to cover the first integrated device in such a manner that a first empty space is provided above the membrane. Electrical-contact elements electrically connect the integrated device with the outside of the substrate-level assembly. In one embodiment, the device substrate integrates at least a further integrated device provided with a respective membrane, and a further empty space, fluidically isolated from the first empty space, is provided over the respective membrane of the further integrated device. | 12-25-2008 |
| 20090278215 | ELECTRONIC DEVICE, SYSTEM, AND METHOD COMPRISING DIFFERENTIAL SENSOR MEMS DEVICES AND DRILLED SUBSTRATES - Electronic device which comprises a substrate provided with at least one passing opening, a MEMS device with function of differential sensor provided with a first and a second surface and of the type comprising at least one portion sensitive to chemical and/or physical variations of fluids present in correspondence with a first and a second opposed active surface thereof, the first surface of the MEMS device leaving the first active surface exposed and the second surface being provided with a further opening which exposes said second opposed active surface, the electronic device being characterized in that the first surface of the MEMS device faces the substrate and is spaced therefrom by a predetermined distance, the sensitive portion being aligned to the passing opening of the substrate, and in that it also comprises a protective package, which incorporates at least partially the MEMS device and the substrate so as to leave the first and second opposed active surfaces exposed respectively through the passing opening of the substrate and the further opening of the second surface. | 11-12-2009 |
| 20100269595 | INTEGRATED DIFFERENTIAL PRESSURE SENSOR - An integrated differential pressure sensor includes, in a monolithic body of semiconductor material, a first face and a second face, a cavity extending at a distance from the first face and delimited therewith by a flexible membrane formed in part by epitaxial material from the monolithic body and in part by annealed epitaxial material from the monolithic body, an access passage in fluid communication with the cavity, and in the flexible membrane at least one transduction element configured so as to convert a deformation of the flexible membrane into electrical signals. The cavity is formed in a position set at a distance from the second face and is delimited at the second face with a portion of the monolithic body. | 10-28-2010 |
| 20100327864 | MAGNETORESISTIVE SENSOR AND MANUFACTURING METHOD THEREOF - A magnetoresistive element formed by a strip of magnetoresistive material which extends on a substrate of semiconductor material having an upper surface. The strip comprises at least one planar portion which extends parallel to the upper surface, and at least one transverse portion which extends in a direction transverse to the upper surface. The transverse portion is formed on a transverse wall of a dig. By providing a number of magnetoresistive elements perpendicular to one another it is possible to obtain an electronic compass that is insensitive to oscillations with respect to the horizontal plane parallel to the surface of the Earth. | 12-30-2010 |
| 20110140693 | INTEGRATED TRIAXIAL MAGNETOMETER OF SEMICONDUCTOR MATERIAL MANUFACTURED IN MEMS TECHNOLOGY - Two suspended masses are configured so as to be flowed by respective currents flowing in the magnetometer plane in mutually transversal directions and are capacitively coupled to lower electrodes. Mobile sensing electrodes are carried by the first suspended mass and are capacitively coupled to respective fixed sensing electrodes. The first suspended mass is configured so as to be mobile in a direction transversal to the plane in presence of a magnetic field having a component in a first horizontal direction. The second suspended mass is configured so as to be mobile in a direction transversal to the plane in presence of a magnetic field having a component in a second horizontal direction, and the first suspended mass is configured so as to be mobile in a direction parallel to the plane and transversal to the current flowing in the first suspended mass in presence of a magnetic field having a component in a vertical direction. | 06-16-2011 |
