Lomenick
Brett Eugene Lomenick, Los Angeles, CA US
Patent application number | Description | Published |
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20100184112 | NOVEL AFFINITY BASED METHOD FOR DRUG TARGET IDENTIFICATION - Drug affinity responsive target stability (DARTS) is a novel method of drug target ID with several significant advantages over current techniques. In certain embodiments the method involves contacting a sample comprising one or more protein target(s) with a test agent to form a sample/test agent mixture; contacting the mixture with a protease; and identifying a protein or protein fragment that is protected from proteolysis, wherein the protection from proteolysis is an indicator that the protein or protein fragment binds to or interacts with the test agent. | 07-22-2010 |
20110288153 | TRANSLATION FACTORS AS ANTI-AGING DRUG TARGETS - In certain embodiments this invention pertains to the discovery that inhibition of the expression and/or activity of eukaryotic initiation factor 4A (eIF4A) inhibits the aging process. Accordingly, in certain embodiments, methods are provided for inhibiting/slowing aging. The methods typically involve administering to a mammal an agent that inhibits the expression and/or activity of eukaryotic initiation factor 4A (eIF4A) in an amount sufficient to inhibit expression or activity of EIF4A, where the agent is not resveratrol. | 11-24-2011 |
Robert Lomenick, Palm Bay, FL US
Patent application number | Description | Published |
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20130130445 | ACTIVE AREA BONDING COMPATIBLE HIGH CURRENT STRUCTURES - A semiconductor structure comprises a top metal layer, a bond pad formed on the top metal layer, a conductor formed below the top metal layer, and an insulation layer separating the conductor from the top metal layer. The top metal layer includes a sub-layer of relatively stiff material compared to the remaining portion of the top metal layer. The sub-layer of relatively stiff material is configured to distribute stresses over the insulation layer to reduce cracking in the insulation layer. | 05-23-2013 |
20140113444 | ACTIVE AREA BONDING COMPATIBLE HIGH CURRENT STRUCTURES - A semiconductor structure comprises a top metal layer, a bond pad formed on the top metal layer, a conductor formed below the top metal layer, and an insulation layer separating the conductor from the top metal layer. The top metal layer includes a sub-layer of relatively stiff material compared to the remaining portion of the top metal layer. The sub-layer of relatively stiff material is configured to distribute stresses over the insulation layer to reduce cracking in the insulation layer. | 04-24-2014 |
Robert H. Lomenick, Potts Camp, MS US
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20130341343 | MEDICATION MANAGEMENT AND ADHERENCE SYSTEM - We disclose herein a medication adherence system and method comprising prepackaged medication that should be taken at a preset time, and an alert system configured to remind the patient to take the medication at said time. | 12-26-2013 |
Robert L. Lomenick, Palm Bay, FL US
Patent application number | Description | Published |
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20100261344 | ACTIVE AREA BONDING COMPATIBLE HIGH CURRENT STRUCTURES - A method of forming a semiconductor structure is provided. One method comprises forming a device region between a substrate and a bond pad. Patterning a conductor between the bond pad and the device region with gaps. Filling the gaps with insulation material that is harder than the conductor to form pillars of relatively hard material that extend through the conductor and forming an insulation layer of the insulation material between the conductor and the bond pad. | 10-14-2010 |
20120261836 | ACTIVE AREA BONDING COMPATIBLE HIGH CURRENT STRUCTURES - A semiconductor structure comprises a top metal layer, a bond pad formed on the top metal layer, a conductor formed below the top metal layer, and an insulation layer separating the conductor from the top metal layer. The top metal layer includes a sub-layer of relatively stiff material compared to the remaining portion of the top metal layer. The sub-layer of relatively stiff material is configured to distribute stresses over the insulation layer to reduce cracking in the insulation layer. | 10-18-2012 |