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Emil J.w. List, Graz AT

Patent application numberDescriptionPublished
20120116050PYRENE-BASED POLYMERS FOR ORGANIC LIGHT EMITTING DIODES (OLEDS) - The present invention relates to novel pyrene-based polymers, methods of preparing the same and uses thereof, in particular for electroluminescent devices. The novel polymers of the invention have the following general formula (I): wherein R05-10-2012

Emil J. W. List, Graz AT

Patent application numberDescriptionPublished
20110143047ADHESION-PROMOTING ADDITIVE FOR AN INK FOR IMPRINTING GLASS - The invention relates to an adhesion-promoting additive for an ink for imprinting glass comprising at least one silane, and at least one reticulating agent based on an organic ester of o-silica.06-16-2011

Frans List, Eindhoven NL

Patent application numberDescriptionPublished
20090164699SECURITY STORAGE OF ELECTRONIC KEYS WITHIIN VOLATILE MEMORIES - It is described a method for providing an electronic key within an integrated circuit (06-25-2009

Frans J. List, Eindhoven NL

Patent application numberDescriptionPublished
20090296447FLASH- AND ROM- MEMORY - Method for conversion of a Flash memory cell on a first semiconductor device to a ROM memory cell in a second semiconductor device, the first and second semiconductor device each being arranged on a semiconductor substrate and each comprising an identical device portion and an identical wiring scheme for wiring the device portion to the Flash memory cell and to the ROM memory cell, respectively; the Flash memory cell being made in non-volatile memory technology and comprising an access transistor and a floating transistor, the floating transistor comprising a floating gate and a control gate; the ROM memory cell being made in a baseline technology and comprising a single gate transistor, which method includes manipulating a layout of at least one baseline mask as used in the baseline technology; the manipulation including: incorporating into the layout of the at least one baseline mask a layout of the Flash memory cell, and converting the layout of the Flash memory cell to a layout of one ROM memory cell by eliminating, from the at least one baseline mask, a layout for the floating transistor from the layout of the Flash memory cell and designating the layout of the access transistor of the Flash memory cell as a layout of the single gate transistor of the ROM memory cell.12-03-2009

Frans Jacob List, Eindhoven NL

Patent application numberDescriptionPublished
20080246878Teletext Processing Circuit - The invention relates to a device that comprises a memory circuit with memory cells that use floating gate storage transistors, which are conventionally called non-volatile memory cells. A particular embodiment relates to a teletext circuit. A teletext processing circuit comprising a decoder logic circuit and a memory circuit integrated together in an integrated circuit, the memory circuit comprising memory cells for storing teletext page data, the memory cells comprising floating gate storage transistors to store the teletext page data. The page data from memory is used to control the content of displayed teletext images.10-09-2008

Helmut List, Graz AT

Patent application numberDescriptionPublished
20120086217Power Generation Apparatus - The invention relates to a power generation apparatus (04-12-2012