Patent application number | Description | Published |
20080230876 | Leadframe Design for QFN Package with Top Terminal Leads - A semiconductor package includes a leadframe. A first lead finger has a lower portion, a connecting portion extending vertically upward from the lower portion, and a substantially flat, top portion. The top portion forms a top terminal lead structure. A second lead finger is electrically connected to the first lead finger. A portion of the second lead finger forms a bottom terminal lead structure. A portion of the second lead finger corresponds to a bottom surface of the semiconductor package. A surface of the substantially flat, top portion corresponds to a top surface of the semiconductor package. | 09-25-2008 |
20080237825 | STACKED INTEGRATED CIRCUIT PACKAGE SYSTEM WITH CONDUCTIVE SPACER - A stacked integrated circuit package system is provided including providing a first device and a second device with the first device, the second device, or a combination thereof having an integrated circuit die; forming a conductive spacer structure over the first device with the conductive spacer structure having a spacer filler around a conductive element; mounting the second device over the conductive spacer structure and the first device; and encapsulating the first device, the second device, and the conductive spacer structure. | 10-02-2008 |
20080272479 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH DEVICE CAVITY - An integrated circuit package system is provided including connecting an integrated circuit die with an external interconnect, forming a first encapsulation having a device cavity with the integrated circuit die therein, mounting a device in the device cavity over the integrated circuit die, and forming a cover over the device and the first encapsulation. | 11-06-2008 |
20080273312 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH INTERFERENCE-FIT FEATURE - An integrated circuit package system is provided including forming an integrated circuit die, forming an interference-fit feature in the integrated circuit die, fitting a support element within the interference-fit feature, connecting an external interconnect and the integrated circuit die, and encapsulating the integrated circuit die. | 11-06-2008 |
20080284002 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH THIN PROFILE - An integrated circuit package system is provided including attaching an external interconnect on a tape; attaching a backside element on the tape adjacent to the external interconnect; attaching an integrated circuit die with the backside element, the backside element is on a first passive side of the integrated circuit die; connecting a first active side of the integrated circuit die and the external interconnect; and forming a first encapsulation over the integrated circuit die with the backside element exposed. | 11-20-2008 |
20080303122 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH LEADED PACKAGE - An integrated circuit package system includes: providing a frame; attaching a leaded package having leads adjacent the frame wherein the leads extend towards a side opposite the frame; and applying a package encapsulant over the leaded package having the leads partially exposed opposite the frame. | 12-11-2008 |
20080303123 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH LEADFINGER - An integrated circuit package system includes: providing a lead terminal; forming a dummy lead near the lead terminal; positioning a base integrated circuit adjacent the lead terminal and the dummy lead; connecting a die connector to the base integrated circuit and the dummy lead; mounting a stackable integrated circuit over the base integrated circuit; and connecting another of the die connector to the stackable integrated circuit and the dummy lead. | 12-11-2008 |
20080303133 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH CONTOURED DIE - An integrated circuit package system is provided including forming an external interconnect, providing a contoured integrated circuit die having both an extension and a base portion with the extension extending beyond the base portion, placing the contoured integrated circuit die with the base portion coplanar with the external interconnect and the extension overhanging the external interconnect, connecting the contoured integrated circuit die and the external interconnect, and forming a package encapsulation over the contoured integrated circuit die and the external interconnect with both partially exposed. | 12-11-2008 |
20080308933 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH DIFFERENT CONNECTION STRUCTURES - An integrated circuit package system is provided including forming an external interconnect having a tip without a die-attach paddle; mounting a first integrated circuit device structure having a conductive ball over the tip; connecting a first wire between the first integrated circuit device structure and under the tip; and encapsulating the first integrated circuit device structure, the first wire, and the external interconnect with the external interconnect partially exposed. | 12-18-2008 |
20080315380 | INTEGRATED CIRCUIT PACKAGE SYSTEM HAVING PERIMETER PADDLE - An integrated circuit package system comprising: forming a paddle having a hole and an external interconnect; mounting an integrated circuit device having an active side to the paddle with the active side facing the paddle and the hole; connecting a first internal interconnect between the active side and the external interconnect through the hole; and encapsulating the integrated circuit device, the paddle, the first internal interconnect, and the external interconnect with the external interconnect partially exposed. | 12-25-2008 |
20090001539 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH TOP AND BOTTOM TERMINALS - An integrated circuit package system includes a die pad with leads; attaching an integrated circuit over the die pad; attaching a connector to the integrated circuit and the leads; and forming an encapsulant, over the integrated circuit, having a connection cavity over the leads leaving an exposed portion of the leads. | 01-01-2009 |
20090001563 | INTEGRATED CIRCUIT PACKAGE IN PACKAGE SYSTEM WITH ADHESIVELESS PACKAGE ATTACH - An integrated circuit package in package system includes a package in package lead with a package in package lead surface substantially planar, attaching a first integrated circuit package having a first encapsulant surface substantially coplanar with the package in package lead surface, attaching a second integrated circuit near the first integrated circuit package, and forming a package in package encapsulant over the first integrated circuit package and the second integrated circuit. | 01-01-2009 |
20090002961 | PACKAGING SYSTEM WITH HOLLOW PACKAGE - A packaging system comprising: forming terminal leads; configuring a cavity by partially encapsulating the terminal leads with a compound; attaching an integrated circuit device, a micro-electromechanical system, a micro-mechanical system, or a combination thereof in the cavity; and bonding a cover to the terminal leads for enclosing the cavity. | 01-01-2009 |
20090032918 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH MULTIPLE DEVICES - An integrated circuit package system includes: forming a die-attach paddle, an outer interconnect, and an inner interconnect toward the die-attach paddle beyond the outer interconnect; mounting an integrated circuit device over the die-attach paddle; connecting the integrated circuit device to the inner interconnect and the outer interconnect; encapsulating the integrated circuit device over the die-attach paddle; attaching an external interconnect under the outer interconnect; and attaching a circuit device under the die-attach paddle and extended laterally beyond opposite sides of the die-attach paddle. | 02-05-2009 |
20090072364 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH LEADS SEPARATED FROM A DIE PADDLE - An integrated circuit package system is provided including forming a leadframe having a frame and a die paddle having leads thereon. The leads are held with respect to the die paddle. The leads are separated from the die paddle, and a die is attached to the die paddle. Bond wires are bonded between the leads and the die. The die and bond wires are encapsulated. The leadframe is singulated to separate the frame and the die paddle. | 03-19-2009 |
20090072365 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH EXTERNAL INTERCONNECTS AT HIGH DENSITY - An integrated circuit package system includes: connecting an integrated circuit die and external interconnects; forming an encapsulation over the integrated circuit die and a portion of the external interconnects; and forming an isolation hole between the external interconnects and into a side of the encapsulation exposing the external interconnects. | 03-19-2009 |
20090072366 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH DUAL CONNECTIVITY - An integrated circuit package system includes: forming a die-attach paddle, a terminal pad, and an external interconnect with the external interconnect below the terminal pad; connecting an integrated circuit die with the terminal pad and the external interconnect; and forming an encapsulation, having a first side and a second side at an opposing side to the first side, surrounding the integrated circuit die with the terminal pad exposed at the first side and the external interconnect extending below the second side. | 03-19-2009 |
20090085177 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH LEADFRAME ARRAY - An integrated circuit package system includes providing an integrated circuit die; attaching the integrated circuit die over a lead grid having lead blocks; and connecting a die interconnect to the integrated circuit die and the lead blocks. | 04-02-2009 |
20090085178 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH BASE STRUCTURE DEVICE - An integrated circuit packaging system including: forming a base structure, having an opening; mounting a base structure device in the opening; attaching an integrated circuit device over the base structure device; and molding an encapsulant on the base structure, the base structure device, and the integrated circuit device. | 04-02-2009 |
20090115032 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH DUAL CONNECTIVITY - An integrated circuit package system includes: forming a lead having a both top contact portion and a bottom contact portion; connecting an integrated circuit die and the lead; and forming a package encapsulation, having a top side and a bottom side, over the integrated circuit die. The forming the package encapsulation includes partially exposing the top contact portion at the top side, and partially exposing the bottom contact portion along the bottom side with the bottom contact portion extending beyond a nonhorizontal portion of the package encapsulation. | 05-07-2009 |
20090115040 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH ARRAY OF EXTERNAL INTERCONNECTS - An integrated circuit package system includes: forming an array of external interconnects with an intersecting region between the external interconnects; removing the intersecting region for forming an isolation hole between the external interconnects; mounting an integrated circuit die over the external interconnects; connecting an internal interconnect between the integrated circuit die and the external interconnects; and forming a package encapsulation over the integrated circuit die with the external interconnects partially exposed. | 05-07-2009 |
20090121335 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH PACKAGE INTEGRATION - An integrated circuit package system comprising: providing a substrate having a cavity; sealing a package over the cavity of the substrate; and forming an encapsulant over the package and a portion of the substrate substantially preventing the encapsulant from forming in the cavity. | 05-14-2009 |
20090140394 | Semiconductor Device and Method of Forming Through Hole Vias in Die Extension Region Around Periphery of Die - A semiconductor wafer contains a plurality of semiconductor die. The semiconductor wafer is diced to separate the semiconductor die. The semiconductor die are transferred onto a carrier. A die extension region is formed around a periphery of the semiconductor die on the carrier. The carrier is removed. A plurality of through hole vias (THV) is formed in first and second offset rows in the die extension region. A conductive material is deposited in the THVs. A first RDL is formed between contact pads on the semiconductor die and the THVs. A second RDL is formed on a backside of the semiconductor die in electrical contact with the THVs. An under bump metallization is formed in electrical contact with the second RDL. Solder bumps are formed on the under bump metallization. The die extension region is singulated to separate the semiconductor die. | 06-04-2009 |
20090140441 | Wafer Level Die Integration and Method - In a wafer level chip scale package (WLSCP), a semiconductor die has active circuits and contact pads formed on its active surface. A second semiconductor die is disposed over the first semiconductor die. A first redistribution layer (RDL) electrically connects the first and second semiconductor die. A third semiconductor die is disposed over the second semiconductor die. The second and third semiconductor die are attached with an adhesive. A second RDL electrically connects the first, second, and third semiconductor die. The second RDL can be a bond wire. Passivation layers isolate the RDLs and second and third semiconductor die. A plurality of solder bumps is formed on a surface of the WLSCP. The solder bumps are formed on under bump metallization which electrically connects to the RDLs. The solder bumps electrically connect to the first, second, or third semiconductor die through the first and second RDLs. | 06-04-2009 |
20090146282 | Semiconductor Package and Method of Forming Similar Structure for Top and Bottom Bonding Pads - A semiconductor package has a first semiconductor die mounted on a substrate. A conductive via is formed through the substrate. A first RDL is formed on a first surface of the substrate in electrical contact with the conductive via and the first semiconductor die. A second RDL is formed on a second surface of the substrate opposite the first surface of the substrate die in electrical contact with the conductive via. A second semiconductor die can be mounted on the substrate and electrically connected to the second RDL. Bonding pads are formed over the first and second surfaces of the substrate in electrical contact with the first and second RDLs, respectively. The bonding pads on opposite surfaces of the substrate are aligned. Solder bumps or bond wires can be formed on the bonding pads. The semiconductor packages can be stacked and electrically connected through the aligned bonding pads. | 06-11-2009 |
20090146297 | Semiconductor Device and Method of Forming Wafer Level Ground Plane and Power Ring - A semiconductor die has active circuits formed on its active surface. Contact pads are formed on the active surface of the semiconductor die and coupled to the active circuits. A die extension region is formed around a periphery of the semiconductor die. Through hole vias (THV) are formed in the die extension region. A conductive plane or ring is formed in a center area on the active surface of the semiconductor die. The conductive plane or ring is coupled to a first contact pad for providing a first power supply potential to the active circuits. The conductive plane or ring is electrically connected to a first THV. A conductive ring is formed partially around a perimeter of the conduction plane or ring. The conductive ring is coupled to a second contact pad for providing a second power supply potential to the active circuits. The conductive ring is electrically connected to a second THV. | 06-11-2009 |
20090166785 | Semiconductor Device with Optical Sensor and Method of Forming Interconnect Structure on Front and Backside of the Device - A semiconductor package has a semiconductor die with an optically active region which converts light to an electrical signal. An expansion region is formed around the semiconductor die. A through hole via (THV) is formed in the expansion region. Conductive material is deposited in the THV. A passivation layer is formed over the semiconductor die. The passivation layer allows for passage of light to the optically active region of the semiconductor die. A glass layer is applied to the passivation layer. A first RDL is electrically connected between the THV and a contact pad of the semiconductor die. Additional RDLs are formed on a front and back side of the semiconductor die. An under bump metallization (UBM) layer is formed over and electrically connected to the intermediate conduction layer. Solder material is deposited on the UBM and reflowed to form a solder bump. | 07-02-2009 |
20090166821 | Leadframe Design for QFN Package with Top Terminal Leads - A semiconductor package includes a leadframe. A first lead finger has a lower portion, a connecting portion extending vertically upward from the lower portion, and a substantially flat, top portion. The top portion forms a top terminal lead structure. A second lead finger is electrically connected to the first lead finger. A portion of the second lead finger forms a bottom terminal lead structure. A portion of the second lead finger corresponds to a bottom surface of the semiconductor package. A surface of the substantially flat, top portion corresponds to a top surface of the semiconductor package. | 07-02-2009 |
20090166825 | System and Apparatus for Wafer Level Integration of Components - In a semiconductor package, a substrate has an active surface containing a plurality of active circuits. An adhesive layer is formed over the active surface of the substrate, and a known good unit (KGU) is mounted to the adhesive layer. An interconnect structure electrically connects the KGU and active circuits on the substrate. The interconnect structure includes a wire bond between a contact pad on the substrate and a contact pad on the KGU, a redistribution layer on a back surface of the substrate, opposite the active surface, a through hole via (THV) through the substrate that electrically connects the redistribution layer and wire bond, and solder bumps formed in electrical contact with the redistribution layer. The KGU includes a KGU substrate for supporting the KGU, a semiconductor die disposed over the KGU substrate, and an encapsulant formed over the semiconductor die. | 07-02-2009 |
20090166845 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH EXTENDED CORNER LEADS - An integrated circuit package system including: forming a die pad, wherein the die pad has a tiebar at a corner; forming a lead wherein the lead is connected to the tiebar; connecting an integrated circuit die to the die pad; and forming an encapsulation, having an edge, over the integrated circuit die with the lead extending from and beyond the edge. | 07-02-2009 |
20090166885 | INTEGRATED CIRCUIT PACKAGE WITH IMPROVED CONNECTIONS - An integrated circuit package system comprising: providing an integrated circuit die; forming a top paddle over the integrated circuit die wherein the top paddle has planar dimensions smaller than planar dimensions of the integrated circuit die; forming leads adjacent the top paddle; attaching first connectors to the integrated circuit die and the top paddle; attaching second connectors to the integrated circuit die and the leads; and forming an encapsulant over the first connectors, the second connectors, the integrated circuit die, and the top paddle. | 07-02-2009 |
20090230517 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH INTEGRATION PORT - An integrated circuit package system comprising: fabricating a package base including: forming a lead frame, coupling a first integrated circuit device under the lead frame, coupling a second integrated circuit device over the first integrated circuit device, and molding an enclosure on the lead frame, the first integrated circuit device, and the second integrated circuit device for forming an integration port; and coupling a third integrated circuit device on the integration port. | 09-17-2009 |
20090236704 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH ISOLATED LEADS - An integrated circuit package system comprising: forming a finger; forming a die pad adjacent the finger; applying a fill material around the finger and the die pad; forming a cavity in the finger and fill material; and attaching an integrated circuit die over the die pad adjacent the finger with the fill material. | 09-24-2009 |
20090236733 | BALL GRID ARRAY PACKAGE SYSTEM - A ball grid array package system comprising: forming a package base including: fabricating a heat spreader having an access port, attaching an integrated circuit die to the heat spreader, mounting a substrate around the integrated circuit die, and coupling an electrical interconnect between the integrated circuit die and the substrate; and coupling a second integrated circuit package to the substrate through the access port. | 09-24-2009 |
20090243045 | Through Hole Vias at Saw Streets Including Protrusions or Recesses for Interconnection - A semiconductor package includes a semiconductor die having a contact pad formed over a top surface of the semiconductor die. The semiconductor die may include an optical device. In one embodiment, a second semiconductor die is deposited over the semiconductor die. The package includes an insulating material deposited around a portion of the semiconductor die. In one embodiment, the insulating material includes an organic material. A first through hole via (THV) is formed in the insulating material using a conductive material. The first THV may form a protrusion extending beyond a bottom surface of the semiconductor die opposite the top surface and be connected to a first semiconductor device. A redistribution layer (RDL) may be deposited over the semiconductor die. The RDL forms an electrical connection between the contact pad of the semiconductor die and the first THV. | 10-01-2009 |
20090243064 | Method and Apparatus For a Package Having Multiple Stacked Die - A method of manufacturing a semiconductor package involves providing a substrate having a window. The substrate may include a leadframe having half-etched leads. First and second semiconductor devices are mounted to a top surface of the substrate on either side of the window using an adhesive. A third semiconductor device is mounted to the first and second semiconductor devices using an adhesive. The third semiconductor device is disposed over the window of the substrate. A wirebond or other electrical interconnect is formed between the third semiconductor device and a contact pad formed over a bottom surface of the substrate opposite the top surface of the substrate. The wirebond or other electrical interconnect passes through the window of the substrate. An encapsulant is deposited over the first, second, and third semiconductor devices. | 10-01-2009 |
20090243066 | MOUNTABLE INTEGRATED CIRCUIT PACKAGE SYSTEM WITH EXPOSED EXTERNAL INTERCONNECTS - The present invention provides a mountable integrated circuit package system comprising: providing an inner integrated circuit package including a first external interconnect having a shoulder; connecting an intraconnect between a second external interconnect and the shoulder; and forming an outer encapsulation over the inner integrated circuit package, the intraconnect, and partially exposing the first external interconnect on a top encapsulation side of the outer encapsulation and the second external interconnect on a bottom encapsulation side of the outer encapsulation. | 10-01-2009 |
20090243067 | MOUNTABLE INTEGRATED CIRCUIT PACKAGE SYSTEM WITH SUBSTRATE - A mountable integrated circuit package system includes: providing a substrate having an opening provided therein; providing an encapsulated integrated circuit package having an external leadfinger; mounting the encapsulated integrated circuit package by the external leadfinger proximate to the opening in the substrate; and connecting the external leadfinger and the substrate. | 10-01-2009 |
20090243068 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH NON-SYMMETRICAL SUPPORT STRUCTURES - An integrated circuit package system including: providing a substrate with a wire-bonded die mounted thereover; mounting a first support structure and a second support structure of different size above the substrate; mounting a structure above the first support structure and the second support structure; and encapsulating the wire-bonded die, the first support structure and the second support structure with an encapsulation. | 10-01-2009 |
20090243069 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH REDISTRIBUTION - An integrated circuit package system comprising: forming a base package having a molded top; providing a surface contact on the base package; and patterning a redistribution layer on the molded top for coupling the surface contact. | 10-01-2009 |
20090243082 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH PLANAR INTERCONNECT - An integrated circuit package system includes: mounting an integrated circuit die adjacent to a lead; forming a first encapsulation around and exposing the integrated circuit die and the lead; and forming a planar interconnect between the integrated circuit die and the lead with the planar interconnect on the first encapsulation. | 10-01-2009 |
20090289335 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH SHIELD AND TIE BAR - An integrated circuit package system includes: providing a tie bar and a lead adjacent thereto; connecting an integrated circuit and the lead; mounting a shield over the integrated circuit with the shield connected to the tie bar; and encapsulating the integrated circuit and the shield. An integrated circuit package system also includes: forming a lead and a support structure with substantially the same material as the lead and elevated above the lead; connecting an integrated circuit and the lead; mounting a shield over the integrated circuit with the shield on the support structure; and encapsulating the integrated circuit and the shield. | 11-26-2009 |
20090289356 | Wirebondless Wafer Level Package with Plated Bumps and Interconnects - A semiconductor package includes a carrier strip having a die cavity and a plurality of bump cavities. A semiconductor die is mounted in the die cavity of the carrier strip using a die attach adhesive. In one embodiment, a top surface of the semiconductor die is approximately coplanar with a top surface of the carrier strip proximate to the die cavity. Underfill material is deposited into the die cavity between the semiconductor die and a surface of the die cavity. In one embodiment, a passivation layer is deposited over the semiconductor die, and a portion of the passivation layer is etched to expose a contact pad of the semiconductor die. A metal layer is deposited over the package. The metal layer forms a package bump and a plated interconnect between the package bump and the contact pad of the semiconductor die. Encapsulant is deposited over the semiconductor package. | 11-26-2009 |
20090294935 | SEMICONDUCTOR PACKAGE SYSTEM WITH CUT MULTIPLE LEAD PADS - A semiconductor package system includes: providing a leadframe having inner frame bars, outer frame bars, a die pad, tiebars, and rows of leads, the inner frame bars being coplanar with outer frame bars; attaching a semiconductor chip to the die pad; attaching bond wires between the semiconductor chip and the rows of leads; encapsulating the semiconductor chip, the bond wires, the inner frame bars, the outer frame bars, the die pad, the tiebars, and the rows of leads in an encapsulant; cutting a groove to remove the inner frame bars; and singulating the leadframe and the encapsulant to remove the outer frame bars. | 12-03-2009 |
20090302442 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH ISOLATED PADS AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit die packaging system includes: providing a lead frame having a die attach paddle, an isolated pad, and a connector; attaching an integrated circuit die to the die attach paddle and the connector; forming an encapsulation over the integrated circuit die, the connector, the die attach paddle, and the isolated pad; and singulating the connector and the die attach paddle whereby the isolated pads are electrically isolated. | 12-10-2009 |
20090302452 | MOUNTABLE INTEGRATED CIRCUIT PACKAGE-IN-PACKAGE SYSTEM - A mountable integrated circuit package-in-package system includes: providing an interface integrated circuit package system with a terminal having a plated bumped portion of an inner encapsulation; mounting the interface integrated circuit package system over a package carrier with the terminal facing away from the package carrier; connecting the package carrier and a pad extension of the terminal; and forming a package encapsulation over the interface integrated circuit package system with the terminal exposed. | 12-10-2009 |
20100006993 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH CHIP ON LEAD - An integrated circuit package system includes: providing a lead having a lead connection surface for connectivity to a next level system; attaching an integrated circuit over the lead having the lead connection surface substantially within a region below a perimeter of the integrated circuit without a die paddle, a substrate conductor, or a redistribution layer; and attaching a die connector to the integrated circuit and the lead. | 01-14-2010 |
20100013102 | Semiconductor Device and Method of Providing a Thermal Dissipation Path Through RDL and Conductive Via - A semiconductor device has a conductive via formed around a perimeter of the semiconductor die. First and second conductive layers are formed on opposite sides of the semiconductor die and thermally connected to the conductive via. An insulating layer is formed over the semiconductor die. A portion of the insulating layer is removed to expose the first conductive layer and a thermal dissipation region of semiconductor die. A thermal via is formed through the insulating layer to the first conductive layer. A thermally conductive layer is formed over the thermal dissipation region and thermal via. A thermal conduction path is formed from the thermal dissipation region through the thermally conductive layer, thermal via, first conductive layer, conductive via, and second conductive layer. The thermal conduction path terminates in an external thermal ground point. The thermally conductive layer provides shielding for electromagnetic interference. | 01-21-2010 |
20100025830 | A METHOD FOR FORMING AN ETCHED RECESS PACKAGE ON PACKAGE SYSTEM - An integrated circuit package system includes: providing a die attach paddle with interconnection pads connected to a bottom surface of the die attach paddle; connecting a first device to the interconnection pads with a bond wire; connecting a lead to the interconnection pad or to the first device; encapsulating the first device and the die attach paddle with an encapsulation having a top surface; and etching the die attach paddle leaving a recess in the top surface of the encapsulation. | 02-04-2010 |
20100025834 | FAN-IN INTERPOSER ON LEAD FRAME FOR AN INTEGRATED CIRCUIT PACKAGE ON PACKAGE SYSTEM - An integrated circuit package on package system includes: providing a lead having a wire-bonded die with a bond wire connected thereto; mounting a fan-in interposer over the wire-bonded die and the bond wire; connecting the fan-in interposer to the lead with the bond wires; and encapsulating the wire-bonded die, bond wires, and the fan-in interposer with an encapsulation leaving a portion of the fan-in interposer exposed. | 02-04-2010 |
20100025836 | MULTI-LAYER PACKAGE-ON-PACKAGE SYSTEM - A package-on-package system includes: providing a bottom package module incorporating a bottom package substrate; attaching a central internal stacking module, incorporating a central interposer, on top of the bottom package module; placing a spacer on the top surface of the central internal stacking module; mounting a first top package module, incorporating a first top interposer with an opening, on the spacer; and enclosing at least portions of the bottom package module, the central internal stacking module, and the first top package module with an encapsulant. | 02-04-2010 |
20100029046 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH CONCAVE TERMINAL - An integrated circuit package system includes: connecting a concave terminal and an integrated circuit; and forming an encapsulation, having a bottom side, over the integrated circuit and the concave terminal with the concave terminal within the encapsulation. | 02-04-2010 |
20100038761 | INTEGRATED CIRCUIT PACKAGE SYSTEM - An integrated circuit package system includes: mounting a first integrated circuit over a carrier; mounting an interposer, having an opening, over the first integrated circuit and the carrier with the interposer having an overhang over the carrier; connecting an internal interconnect, through the opening, between the carrier and the interposer; and forming an encapsulation over the first integrated circuit, the internal interconnect, and the carrier. | 02-18-2010 |
20100052131 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH REDISTRIBUTION LAYER - An integrated circuit package system includes forming a first external interconnect having both a first side and a second side that is an opposing side to the first side; forming a first encapsulation around a first integrated circuit and the first external interconnect with the first side, the second side, and the first active side of the first integrated circuit exposed; forming a planar interconnect between the first active side and the second side; forming a second encapsulation covering the planar interconnect and the first active side; connecting a second integrated circuit over the first integrated circuit and the first side; and forming a top encapsulation over the second integrated circuit. | 03-04-2010 |
20100059873 | BALL GRID ARRAY PACKAGE STACKING SYSTEM - A ball grid array package stacking system includes: forming a heat spreader having a centrally located access port; mounting a substrate in the heat spreader for providing a connection pad in the centrally located access port; coupling an integrated circuit die to the substrate; and coupling a system interconnect to the integrated circuit die, the connection pad, or a combination thereof. | 03-11-2010 |
20100072589 | SEMICONDUCTOR PACKAGE SYSTEM WITH DIE SUPPORT PAD - A semiconductor package system includes: providing a leadframe with a lead; making a die support pad separately from the leadframe; attaching a semiconductor die to the die support pad through a die attach adhesive, the semiconductor die being spaced from the lead; and connecting a bonding pad on the semiconductor die to the lead using a bonding wire. | 03-25-2010 |
20100072599 | Semiconductor Device and Method of Forming a Wafer Level Package with Top and Bottom Solder Bump Interconnection - A semiconductor device is made by forming solder bumps over a copper carrier. Solder capture indentations are formed in the copper carrier to receive the solder bumps. A semiconductor die is mounted to the copper carrier using a die attach adhesive. The semiconductor die has contact pads formed over its active surface. An encapsulant is deposited over the copper carrier, solder bumps, and semiconductor die. A portion of the encapsulant is removed to expose the solder bumps and contact pads. A conductive layer is formed over the encapsulant to connect the solder bumps and contact pads. The conductive layer operates as a redistribution layer to route electrical signals from the solder bumps to the contact pads. The copper carrier is removed. An insulating layer is formed over the conductive layer and encapsulant. A plurality of semiconductor devices can be stacked and electrically connected through the solder bumps. | 03-25-2010 |
20100072618 | Semiconductor Device and Method of Forming a Wafer Level Package with Bump Interconnection - A semiconductor device is made by providing a metal substrate for supporting the semiconductor device. Solder bumps are connected to the substrate. In one embodiment, a conductive material is deposited over the substrate and is reflowed to form the solder bumps. A semiconductor die is mounted to the substrate using a die attach adhesive. The semiconductor die has a plurality of contact pads formed over a surface of the semiconductor die. An encapsulant material is deposited over the solder bumps and the semiconductor die. The encapsulant is etched to expose the contact pads of the semiconductor die. A first redistribution layer (RDL) is formed over the encapsulant to connect each contact pad of the semiconductor die to one of the solder bumps. The substrate is removed to expose the die attach adhesive and a bottom surface of the solder bumps. | 03-25-2010 |
20100123227 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH INCREASED CONNECTIVITY AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: forming a lead frame having contact pads and connection leads; coupling a base integrated circuit to the contact pads; coupling a chip interconnect between the base integrated circuit, the connection leads, the contact pads, or a combination thereof; molding a package body on the connection leads, the base integrated circuit, and the chip interconnects, includes having the contact pads exposed; and forming a bottom surface on the package body including forming the connection leads to be coplanar with the bottom surface. | 05-20-2010 |
20100123229 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH PLATED PAD AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: forming an external interconnect; forming a first planar terminal adjacent to the external interconnect and non-planar to a portion the external interconnect; mounting a first integrated circuit over the first planar terminal; connecting the first integrated circuit with the external interconnect; and forming an encapsulation over the first planar terminal covering the first integrated circuit and with the external interconnect extending from a non-horizontal side of the encapsulation and with the first planar terminal coplanar with the adjacent portion of the encapsulation exposing the first planar terminal. | 05-20-2010 |
20100123230 | INTEGRATED CIRCUIT PACKAGING SYSTEM HAVING BUMPED LEAD AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: forming a first terminal having a cavity; mounting a first integrated circuit over the first terminal and connected in the cavity; forming a second terminal adjacent to the first terminal; connecting a second integrated circuit, over the first integrated circuit, and the second terminal; and forming a first encapsulation over the first integrated circuit with the first terminal exposed. | 05-20-2010 |
20100140751 | Semiconductor Device and Method of Forming a Conductive Via-in-Via Structure - A semiconductor device is made from a semiconductor wafer containing semiconductor die separated by a peripheral region. A conductive via-in-via structure is formed in the peripheral region or through an active region of the device to provide additional tensile strength. The conductive via-in-via structure includes an inner conductive via and outer conductive via separated by insulating material. A middle conductive via can be formed between the inner and outer conductive vias. The inner conductive via has a first cross-sectional area adjacent to a first surface of the semiconductor device and a second cross-sectional area adjacent to a second surface of the semiconductor device. The outer conductive via has a first cross-sectional area adjacent to the first surface of the semiconductor device and a second cross-sectional area adjacent to the second surface of the semiconductor device. The first cross-sectional area is different from the second cross-sectional area. | 06-10-2010 |
20100140763 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH STACKED PADDLE AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: forming a package paddle and a terminal adjacent to the package paddle; mounting a stack paddle over the package paddle with the stack paddle at a non-center offset with the package paddle; mounting a stack integrated circuit over the stack paddle; and encapsulating the stack integrated circuit and the stack paddle. | 06-10-2010 |
20100140764 | WIRE-ON-LEAD PACKAGE SYSTEM AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of a wire-on-lead package system includes: providing a die attach paddle with paddle extensions distributed along the periphery of the die attach paddle, providing leadfingers surrounding the die attach paddle, attaching a semiconductor die to the die attach paddle wherein the semiconductor die is larger than the die attach paddle, and connecting bond wires between the semiconductor die and the leadfingers and between the semiconductor die and the paddle extensions. | 06-10-2010 |
20100140789 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH EXPOSED TERMINAL INTERCONNECTS AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: providing a lead; mounting an inner package so that the lead is peripheral to the inner package, and the inner package having a connection pad; forming an exposed terminal interconnect on the connection pad; and encapsulating the inner package, and partially encapsulating the exposed terminal interconnect with an encapsulation. | 06-10-2010 |
20100244273 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH MULTIPLE DEVICE UNITS AND METHOD FOR MANUFACTURING THEREOF - A method for manufacturing an integrated circuit package system includes: forming a first device unit, having first external interconnects arranged along a perimeter of the first device unit, and a second device unit, having second external interconnects arranged along a perimeter of the second device unit, in an array configuration; mounting an integrated circuit die over the first device unit; connecting the integrated circuit die and the first external interconnects; encapsulating with an encapsulation covering the integrated circuit die, the first device unit, and the second device unit with both the first external interconnects and the second external interconnects partially exposed; and forming a partial encapsulation cut in the encapsulation electrically isolating the first external interconnects and the second electrical interconnects. | 09-30-2010 |
20100264525 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH LEADED PACKAGE AND METHOD FOR MANUFACTURING THEREOF - A method for manufacturing an integrated circuit package system includes: providing a frame; attaching a leaded package having leads adjacent the frame wherein the leads extend towards a side opposite the frame; and applying a package encapsulant over the leaded package having the leads partially exposed opposite the frame. | 10-21-2010 |
20100308459 | Semiconductor Device and Method of Forming Through Hole Vias in Die Extension Region Around Periphery of Die - A semiconductor wafer contains a plurality of semiconductor die. The semiconductor wafer is diced to separate the semiconductor die. The semiconductor die are transferred onto a carrier. A die extension region is formed around a periphery of the semiconductor die on the carrier. The carrier is removed. A plurality of through hole vias (THV) is formed in first and second offset rows in the die extension region. A conductive material is deposited in the THVs. A first RDL is formed between contact pads on the semiconductor die and the THVs. A second RDL is formed on a backside of the semiconductor die in electrical contact with the THVs. An under bump metallization is formed in electrical contact with the second RDL. Solder bumps are formed on the under bump metallization. The die extension region is singulated to separate the semiconductor die. | 12-09-2010 |
20100308467 | Semiconductor Device and Method of Forming Through Hole Vias in Die Extension Region Around Periphery of Die - A semiconductor wafer contains a plurality of semiconductor die. The semiconductor wafer is diced to separate the semiconductor die. The semiconductor die are transferred onto a carrier. A die extension region is formed around a periphery of the semiconductor die on the carrier. The carrier is removed. A plurality of through hole vias (THV) is formed in first and second offset rows in the die extension region. A conductive material is deposited in the THVs. A first RDL is formed between contact pads on the semiconductor die and the THVs. A second RDL is formed on a backside of the semiconductor die in electrical contact with the THVs. An under bump metallization is formed in electrical contact with the second RDL. Solder bumps are formed on the under bump metallization. The die extension region is singulated to separate the semiconductor die. | 12-09-2010 |
20100311206 | Semiconductor Device and Method of Forming Through Hole Vias in Die Extension Region Around Periphery of Die - A semiconductor wafer contains a plurality of semiconductor die. The semiconductor wafer is diced to separate the semiconductor die. The semiconductor die are transferred onto a carrier. A die extension region is formed around a periphery of the semiconductor die on the carrier. The carrier is removed. A plurality of through hole vias (THV) is formed in first and second offset rows in the die extension region. A conductive material is deposited in the THVs. A first RDL is formed between contact pads on the semiconductor die and the THVs. A second RDL is formed on a backside of the semiconductor die in electrical contact with the THVs. An under bump metallization is formed in electrical contact with the second RDL. Solder bumps are formed on the under bump metallization. The die extension region is singulated to separate the semiconductor die. | 12-09-2010 |
20100320588 | Semiconductor Device and Method of Forming Prefabricated Heat Spreader Frame with Embedded Semiconductor Die - A semiconductor device is made by mounting a prefabricated heat spreader frame over a temporary substrate. The heat spreader frame includes vertical bodies over a flat plate. A semiconductor die is mounted to the heat spreader frame for thermal dissipation. An encapsulant is deposited around the vertical bodies and semiconductor die while leaving contact pads on the semiconductor die exposed. The encapsulant can be deposited using a wafer level direct/top gate molding process or wafer level film assist molding process. An interconnect structure is formed over the semiconductor die. The interconnect structure includes a first conductive layer formed over the semiconductor die, an insulating layer formed over the first conductive layer, and a second conductive layer formed over the first conductive layer and insulating layer. The temporary substrate is removed, dicing tape is applied to the heat spreader frame, and the semiconductor die is singulated. | 12-23-2010 |
20100320589 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH BUMPS AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: providing a base strip having a base top side; forming a terminal body with a substantially spherical shape partially in the base strip; attaching a device adjacent the terminal body and over the base top side, a device mount side of the device below a top portion of the terminal body; attaching a device connector to the device and the top portion of the terminal body; applying an encapsulant over the device connector, the device, and the top portion of the terminal body; and removing the base strip providing the terminal body partially exposed from the encapsulant. | 12-23-2010 |
20100320590 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH A LEADFRAME HAVING RADIAL-SEGMENTS AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: providing inwardly converging leadfingers having continuously decreasing widths along lengths thereof to inward ends thereof; electrically connecting an integrated circuit device on the leadfingers only on portions of the continuously decreasing widths; and encapsulating the integrated circuit device and the leadfingers with an encapsulation. | 12-23-2010 |
20100320591 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH CONTACT PADS AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: attaching contact pads to a base structure; connecting a base die to the base structure; connecting a supporting die over the base die by conductive balls to the contact pads on two sides of the base die; encapsulating the contact pads, the base die, the supporting die, and the conductive balls; and removing the base structure. | 12-23-2010 |
20110024903 | Semiconductor Device and Method of Forming Wafer Level Ground Plane and Power Ring - A semiconductor die has active circuits formed on its active surface. Contact pads are formed on the active surface of the semiconductor die and coupled to the active circuits. A die extension region is formed around a periphery of the semiconductor die. Conductive through hole vias (THV) are formed in the die extension region. A wafer level conductive plane or ring is formed on a center area of the active surface. The conductive plane or ring is connected to a first contact pad to provide a first power supply potential to the active circuits, and is electrically connected to a first conductive THV. A conductive ring is formed partially around a perimeter of the conductive plane or ring and connected to a second contact pad for providing a second power supply potential to the active circuits. The conductive ring is electrically connected to a second THV. | 02-03-2011 |
20110037168 | Semiconductor Device and Method of Providing a Thermal Dissipation Path Through RDL and Conductive Via - A semiconductor device has a conductive via formed around a perimeter of the semiconductor die. First and second conductive layers are formed on opposite sides of the semiconductor die and thermally connected to the conductive via. An insulating layer is formed over the semiconductor die. Openings in the insulating layer expose the first conductive layer and a thermal dissipation region of semiconductor die. A thermal via is formed through the insulating layer to the first conductive layer. A thermally conductive layer is formed over the thermal dissipation region and thermal via. A thermal conduction path is formed from the thermal dissipation region through the thermally conductive layer, thermal via, first conductive layer, conductive via, and second conductive layer. The thermal conduction path terminates in an external thermal ground point. The thermally conductive layer provides shielding for electromagnetic interference. | 02-17-2011 |
20110049662 | Semiconductor Device with Optical Sensor and Method of Forming Interconnect Structure on Front and Backside of the Device - A semiconductor device includes a carrier and semiconductor die having an optically active region. The semiconductor die is mounted to the carrier to form a separation between the carrier and the semiconductor die. The semiconductor device further includes a passivation layer disposed over a surface of the semiconductor die and a glass layer disposed over a surface of the passivation layer. The passivation layer has a clear portion for passage of light to the optically active region of the semiconductor die. The semiconductor device further includes an encapsulant disposed over the carrier within the separation to form an expansion region around a periphery of the semiconductor die, a first via penetrating the expansion region, glass layer, and passivation layer, a second via penetrating the glass layer and passivation layer to expose a contact pad on the semiconductor die, and a conductive material filling the first and second vias. | 03-03-2011 |
20110068448 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH CAP LAYER AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: attaching a semiconductor die to a die pad of a leadframe; forming a cap layer on top of the semiconductor die for acting as a ground plane or a power plane; and connecting the semiconductor die to the cap layer through a cap bonding wire. | 03-24-2011 |
20110068458 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH A LEADED PACKAGE AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: providing a first device having a first exposed side and a first inward side; connecting a second device having a second exposed side and a second inward side facing the first inward side to the first device, the second device having planar dimensions less than planar dimensions of the first device; connecting a system connector to a perimeter of the first inward side, the system connector having an exposed leg partially vertical and an exposed foot partially horizontal; and applying an encapsulant exposing the first exposed side, the second exposed side, the exposed leg, and the exposed foot, the exposed leg offset from the encapsulant, the exposed foot on an end of the system connector opposite the first device. | 03-24-2011 |
20110101524 | Semiconductor Device with Bump Interconnection - A semiconductor device includes a semiconductor die having contact pads disposed over a surface of the semiconductor die, a die attach adhesive layer disposed under the semiconductor die, and an encapsulant material disposed around and over the semiconductor die. The semiconductor device further includes bumps disposed in the encapsulant material around a perimeter of the semiconductor die. The bumps are partially enclosed by the encapsulant material. The semiconductor device further comprises first vias disposed in the encapsulant. The first vias expose surfaces of the contact pads. The semiconductor device further includes a first redistribution layer (RDL) disposed over the encapsulant and in the first vias, and a second RDL disposed under the encapsulant material and the die attach adhesive layer. The first RDL electrically connects each contact pad of the semiconductor die to one of the bumps, and the second RDL is electrically connected to one of the bumps. | 05-05-2011 |
20110129965 | METHOD FOR MANUFACTURING SEMICONDUCTOR PACKAGE SYSTEM WITH DIE SUPPORT PAD - A method for manufacturing a semiconductor package system includes: providing a leadframe, having an open center, with leads adjacent to a peripheral edge of the leadframe; making a die support pad, formed without tie bars, separately from the leadframe; providing a coverlay tape for positioning the support pad centered within the leadframe; attaching a semiconductor die to the die support pad through a die attach adhesive, the semiconductor die being spaced from the leads; and connecting a bonding pad on the semiconductor die to one of the leads using a bonding wire. | 06-02-2011 |
20110140251 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH REMOVABLE BACKING ELEMENT HAVING PLATED TERMINAL LEADS AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit package system includes providing a first frame having a first removable backing element connecting a first die attach pad and a first plurality of terminal leads. A first die is attached to the first die attach pad. A substrate is provided. A second die is attached to the substrate. The first die is attached to the second die with a plurality of die interconnects. The first removable backing element is removed after connecting the first die to the second die. | 06-16-2011 |
20110140252 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH DUAL ROW LEAD-FRAME HAVING TOP AND BOTTOM TERMINALS AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: forming outer leads having outer terminal sections, the outer terminal sections having an upper terminal and a bottom terminal; forming inner leads having inner terminal sections wider than a distance between the outer terminal sections of the outer leads, and the inner terminal sections have an upper terminal and a bottom terminal; connecting an integrated circuit to the inner leads and the outer leads; and encapsulating the integrated circuit, the inner leads, and the outer leads with an encapsulation while leaving the upper terminals and the bottom terminals of the outer terminal sections and the upper terminals and bottom terminals of the inner terminal sections exposed from the encapsulation. | 06-16-2011 |
20110140261 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH INTERCONNECT AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: providing a substrate external layer having an opening; forming a convex interconnect within the opening with the convex interconnect having a protrusion and a horizontal flange substantially horizontally coplanar with the substrate external layer; forming an insulation layer over the substrate external layer and the convex interconnect; forming a horizontal conductive pathway on the insulation layer; forming a single interlayer conductive connector from the horizontal conductive pathway to the convex interconnect; and connecting an integrated circuit and the horizontal conductive pathway. | 06-16-2011 |
20110140263 | Semiconductor Device and Method of Forming PIP with Inner Known Good Die Interconnected with Conductive Bumps - A PiP semiconductor device has an inner known good semiconductor package. In the semiconductor package, a first via is formed in a temporary carrier. A first conductive layer is formed over the carrier and into the first via. The first conductive layer in the first via forms a conductive bump. A first semiconductor die is mounted to the first conductive layer. A first encapsulant is deposited over the first die and carrier. The semiconductor package is mounted to a substrate. A second semiconductor die is mounted to the first conductive layer opposite the first die. A second encapsulant is deposited over the second die and semiconductor package. A second via is formed in the second encapsulant to expose the conductive bump. A second conductive layer is formed over the second encapsulant and into the second via. The second conductive layer is electrically connected to the second die. | 06-16-2011 |
20110180928 | ETCHED RECESS PACKAGE ON PACKAGE SYSTEM - An integrated circuit package system includes: interconnection pads; a first device mounted below the interconnection pads; a bond wire, or a solder ball connecting the first device to the interconnection pads; a lead connected to the interconnection pad or to the first device; an encapsulation having a top surface encapsulating the first device; and a recess in the top surface of the encapsulation with the interconnection pads exposed therefrom. | 07-28-2011 |
20110204512 | Wirebondless Wafer Level Package with Plated Bumps and Interconnects - A semiconductor package includes a carrier strip having a die cavity and bump cavities. A semiconductor die is mounted in the die cavity of the carrier strip. In one embodiment, the semiconductor die is mounted using a die attach adhesive. In one embodiment, a top surface of the first semiconductor die is approximately coplanar with a top surface of the carrier strip proximate to the die cavity. A metal layer is disposed over the carrier strip to form a package bump and a plated interconnect between the package bump and a contact pad of the first semiconductor die. An underfill material is disposed in the die cavity between the first semiconductor die and a surface of the die cavity. A passivation layer is disposed over the first semiconductor die and exposes a contact pad of the first semiconductor die. An encapsulant is disposed over the carrier strip. | 08-25-2011 |
20110215458 | Semiconductor Device and Method of Forming Package-on-Package Structure Electrically Interconnected Through TSV in WLCSP - A semiconductor wafer has a plurality of semiconductor die. First and second conductive layers are formed over opposing surfaces of the semiconductor die, respectively. Each semiconductor die constitutes a WLCSP. A TSV is formed through the WLCSP. A semiconductor component is mounted to the WLCSP. The first semiconductor component is electrically connected to the first conductive layer. A first bump is formed over the first conductive layer, and a second bump is formed over the second conductive layer. An encapsulant is deposited over the first bump and first semiconductor component. A second semiconductor component is mounted to the first bump. The second semiconductor component is electrically connected to the first semiconductor component and WLCSP through the first bump and TSV. A third semiconductor component is mounted to the first semiconductor component, and a fourth semiconductor component is mounted to the third semiconductor component. | 09-08-2011 |
20110284999 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH ISOLATED PADS AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: providing a lead frame having a die attach paddle, an isolated pad, and a connector; attaching an integrated circuit die to the die attach paddle and the connector; forming an encapsulation over the integrated circuit die, the connector, the die attach paddle, and the isolated pad; and singulating the connector and the die attach paddle whereby the isolated pads are electrically isolated. | 11-24-2011 |
20110298113 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH INCREASED CONNECTIVITY AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: forming a lead frame having contact pads and connection leads; coupling a base integrated circuit to the contact pads; coupling a chip interconnect between the base integrated circuit, the connection leads, the contact pads, or a combination thereof; molding a package body on the connection leads, the base integrated circuit, and the chip interconnects, including having the contact pads exposed; and forming a bottom surface on the package body including forming the connection leads to be coplanar with the bottom surface. | 12-08-2011 |
20120001326 | Semiconductor Package and Method of Forming Similar Structure for Top and Bottom Bonding Pads - A semiconductor device includes a first semiconductor die. A plurality of conductive vias is formed around the first semiconductor die. A first conductive layer is formed over a first surface of the first semiconductor die and electrically connects to the plurality of conductive vias. A second conductive layer is formed over a second surface of the first semiconductor die opposite the first surface and electrically connects to the plurality of conductive vias. A first passivation layer is formed over the first surface and includes openings that expose the first conductive layer. A second passivation layer is formed over the second surface and includes openings that expose the second conductive layer. Bonding pads are formed within the openings in the first and second passivation layers and are electrically connected to the first and second conductive layers. An interconnect structure is disposed within the openings in the first and second passivation layers. | 01-05-2012 |
20120034777 | Through Hole Vias at Saw Streets Including Protrusions or Recesses for Interconnection - A semiconductor package includes a semiconductor wafer having a plurality of semiconductor die. A contact pad is formed over and electrically connected to an active surface of the semiconductor die. A gap is formed between the semiconductor die. An insulating material is deposited in the gap between the semiconductor die. An adhesive layer is formed over a surface of the semiconductor die and the insulating material. A via is formed in the insulating material and the adhesive layer. A conductive material is deposited in the via to form a through hole via (THV). A conductive layer is formed over the contact pad and the THV to electrically connect the contact pad and the THV. The plurality of semiconductor die is singulated. The insulating material can include an organic material. The active surface of the semiconductor die can include an optical device. | 02-09-2012 |
20120104601 | Semiconductor Device and Method of Forming Wafer Level Ground Plane and Power Ring - A semiconductor die has active circuits formed on its active surface. Contact pads are formed on the active surface of the semiconductor die and coupled to the active circuits. A die extension region is formed around a periphery of the semiconductor die. Conductive THVs are formed in the die extension region. A wafer level conductive plane or ring is formed on a center area of the active surface. The conductive plane or ring is connected to a first contact pad to provide a first power supply potential to the active circuits, and is electrically connected to a first conductive THV. A conductive ring is formed partially around a perimeter of the conductive plane or ring and connected to a second contact pad for providing a second power supply potential to the active circuits. The conductive ring is electrically connected to a second THV. | 05-03-2012 |
20120168806 | Optical Semiconductor Device having Pre-Molded Leadframe with Window and Method Therefor - A semiconductor device is made by providing a semiconductor die having an optically active area, providing a leadframe or pre-molded laminated substrate having a plurality of contact pads and a light transmitting material disposed between the contact pads, attaching the semiconductor die to the leadframe so that the optically active area is aligned with the light transmitting material to provide a light transmission path to the optically active area, and disposing an underfill material between the semiconductor die and leadframe. The light transmitting material includes an elevated area to prevent the underfill material from blocking the light transmission path. The elevated area includes a dam surrounding the light transmission path, an adhesive ring, or the light transmission path itself can be the elevated area. An adhesive ring can be disposed on the dam. A filler material can be disposed between the light transmitting material and contact pads. | 07-05-2012 |
20120241928 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH FLIPCHIP LEADFRAME AND METHOD OF MANUFACTURE THEREOF - An integrated circuit packaging system and method of manufacture thereof includes: leads and a paddle; a first encapsulant molded between the leads and the paddle, the first encapsulant thinner than the leads; a non-conductive layer over the paddle; and conductive traces directly on the leads, the first encapsulant, and the non-conductive layer. | 09-27-2012 |
20120241966 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH PLATED LEADS AND METHOD OF MANUFACTURE THEREOF - An integrated circuit packaging system and method of manufacture thereof includes: an L-plated lead; a die conductively connected to the L-plated lead; and an encapsulant encapsulating the L-plated lead and the die. | 09-27-2012 |
20120261808 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH REMOVABLE BACKING ELEMENT HAVING PLATED TERMINAL LEADS AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit package system includes: attaching a first die to a first die pad; connecting electrically a second die to the first die through a die interconnect positioned between the first die and the second die; connecting a first lead adjacent the first die pad to the first die; connecting a second lead to the second die, the second lead opposing the first lead and adjacent the second die; and providing a molding material around the first die, the second die, the die interconnect, the first lead and the second lead, with a portion of the first lead exposed. | 10-18-2012 |
20120276691 | Wafer Level Die Integration and Method - In a wafer level chip scale package (WLSCP), a semiconductor die has active circuits and contact pads formed on its active surface. A second semiconductor die is disposed over the first semiconductor die. A first redistribution layer (RDL) electrically connects the first and second semiconductor die. A third semiconductor die is disposed over the second semiconductor die. The second and third semiconductor die are attached with an adhesive. A second RDL electrically connects the first, second, and third semiconductor die. The second RDL can be a bond wire. Passivation layers isolate the RDLs and second and third semiconductor die. A plurality of solder bumps is formed on a surface of the WLSCP. The solder bumps are formed on under bump metallization which electrically connects to the RDLs. The solder bumps electrically connect to the first, second, or third semiconductor die through the first and second RDLs. | 11-01-2012 |
20120286400 | Semiconductor Device with Optical Sensor and Method of Forming Interconnect Structure on Front and Backside of the Device - A semiconductor device includes a carrier and semiconductor die having an optically active region. The semiconductor die is mounted to the carrier to form a separation between the carrier and the semiconductor die. The semiconductor device further includes a passivation layer disposed over a surface of the semiconductor die and a glass layer disposed over a surface of the passivation layer. The passivation layer has a clear portion for passage of light to the optically active region of the semiconductor die. The semiconductor device further includes an encapsulant disposed over the carrier within the separation to form an expansion region around a periphery of the semiconductor die, a first via penetrating the expansion region, glass layer, and passivation layer, a second via penetrating the glass layer and passivation layer to expose a contact pad on the semiconductor die, and a conductive material filling the first and second vias. | 11-15-2012 |
20120326302 | Semiconductor Device and Method of Forming PIP with Inner Known Good Die Interconnected with Conductive Bumps - A PiP semiconductor device has an inner known good semiconductor package. In the semiconductor package, a first via is formed in a temporary carrier. A first conductive layer is formed over the carrier and into the first via. The first conductive layer in the first via forms a conductive bump. A first semiconductor die is mounted to the first conductive layer. A first encapsulant is deposited over the first die and carrier. The semiconductor package is mounted to a substrate. A second semiconductor die is mounted to the first conductive layer opposite the first die. A second encapsulant is deposited over the second die and semiconductor package. A second via is formed in the second encapsulant to expose the conductive bump. A second conductive layer is formed over the second encapsulant and into the second via. The second conductive layer is electrically connected to the second die. | 12-27-2012 |
20120326329 | Semiconductor Device and Method of Forming a Conductive Via-in-Via Structure - A semiconductor device is made from a semiconductor wafer containing semiconductor die separated by a peripheral region. A conductive via-in-via structure is formed in the peripheral region or through an active region of the device to provide additional tensile strength. The conductive via-in-via structure includes an inner conductive via and outer conductive via separated by insulating material. A middle conductive via can be formed between the inner and outer conductive vias. The inner conductive via has a first cross-sectional area adjacent to a first surface of the semiconductor device and a second cross-sectional area adjacent to a second surface of the semiconductor device. The outer conductive via has a first cross-sectional area adjacent to the first surface of the semiconductor device and a second cross-sectional area adjacent to the second surface of the semiconductor device. The first cross-sectional area is different from the second cross-sectional area. | 12-27-2012 |
20130256866 | Semiconductor Device and Method of Forming Prefabricated Heat Spreader Frame with Embedded Semiconductor Die - A semiconductor device is made by mounting a prefabricated heat spreader frame over a temporary substrate. The heat spreader frame includes vertical bodies over a flat plate. A semiconductor die is mounted to the heat spreader frame for thermal dissipation. An encapsulant is deposited around the vertical bodies and semiconductor die while leaving contact pads on the semiconductor die exposed. The encapsulant can be deposited using a wafer level direct/top gate molding process or wafer level film assist molding process. An interconnect structure is formed over the semiconductor die. The interconnect structure includes a first conductive layer formed over the semiconductor die, an insulating layer formed over the first conductive layer, and a second conductive layer formed over the first conductive layer and insulating layer. The temporary substrate is removed, dicing tape is applied to the heat spreader frame, and the semiconductor die is singulated. | 10-03-2013 |
20130341789 | Semiconductor Device and Method of Forming a Wafer Level Package with Top and Bottom Solder Bump Interconnection - A semiconductor device is made by forming solder bumps over a copper carrier. Solder capture indentations are formed in the copper carrier to receive the solder bumps. A semiconductor die is mounted to the copper carrier using a die attach adhesive. The semiconductor die has contact pads formed over its active surface. An encapsulant is deposited over the copper carrier, solder bumps, and semiconductor die. A portion of the encapsulant is removed to expose the solder bumps and contact pads. A conductive layer is formed over the encapsulant to connect the solder bumps and contact pads. The conductive layer operates as a redistribution layer to route electrical signals from the solder bumps to the contact pads. The copper carrier is removed. An insulating layer is formed over the conductive layer and encapsulant. A plurality of semiconductor devices can be stacked and electrically connected through the solder bumps. | 12-26-2013 |
20140011315 | Optical Semiconductor Device Having Pre-Molded Leadframe with Window and Method Therefor - A semiconductor device is made by providing a semiconductor die having an optically active area, providing a leadframe or pre-molded laminated substrate having a plurality of contact pads and a light transmitting material disposed between the contact pads, attaching the semiconductor die to the leadframe so that the optically active area is aligned with the light transmitting material to provide a light transmission path to the optically active area, and disposing an underfill material between the semiconductor die and leadframe. The light transmitting material includes an elevated area to prevent the underfill material from blocking the light transmission path. The elevated area includes a dam surrounding the light transmission path, an adhesive ring, or the light transmission path itself can be the elevated area. An adhesive ring can be disposed on the dam. A filler material can be disposed between the light transmitting material and contact pads. | 01-09-2014 |
20140284788 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING PIP WITH INNER KNOWN GOOD DIE INTERCONNECTED WITH CONDUCTIVE BUMPS - A PiP semiconductor device has an inner known good semiconductor package. In the semiconductor package, a first via is formed in a temporary carrier. A first conductive layer is formed over the carrier and into the first via. The first conductive layer in the first via forms a conductive bump. A first semiconductor die is mounted to the first conductive layer. A first encapsulant is deposited over the first die and carrier. The semiconductor package is mounted to a substrate. A second semiconductor die is mounted to the first conductive layer opposite the first die. A second encapsulant is deposited over the second die and semiconductor package. A second via is formed in the second encapsulant to expose the conductive bump. A second conductive layer is formed over the second encapsulant and into the second via. The second conductive layer is electrically connected to the second die. | 09-25-2014 |
20140332955 | Integrated Circuit Package System with Removable Backing Element Having Plated Terminal Leads and Method of Manufacture Thereof - A method of manufacture of an integrated circuit package system includes: attaching a first die to a first die pad; connecting electrically a second die to the first die through a die interconnect positioned between the first die and the second die; connecting a first lead adjacent the first die pad to the first die; connecting a second lead to the second die, the second lead opposing the first lead and adjacent the second die; and providing a molding material around the first die, the second die, the die interconnect, the first lead and the second lead, with a portion of the first lead exposed. | 11-13-2014 |