Lindsay, MA
Bernard Lindsay, Danvers, MA US
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20090004836 | PLASMA DOPING WITH ENHANCED CHARGE NEUTRALIZATION - A plasma doping apparatus includes a pulsed power supply that generates a pulsed waveform having a first period with a first power level and a second period with a second power level. A plasma source generates a pulsed plasma with the first power level during the first period and with the second power level during the second period. A bias voltage power supply generates a bias voltage waveform at an output that is electrically connected to a platen which supports a substrate. The bias voltage waveform having a first voltage during a first period and second voltage with a negative potential that attract ions in the plasma to the substrate for plasma doping during a second period. At least one of the first and second power levels of the RF waveform is chosen to at least partially neutralize charge accumulating on the substrate. | 01-01-2009 |
20090200461 | Closed Loop Control And Process Optimization In Plasma Doping Processes Using A Time of Flight Ion Detector - A method of controlling a plasma doping process using a time-of-flight ion detector includes generating a plasma comprising dopant ions in a plasma chamber proximate to a platen supporting a substrate. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. A spectrum of ions present in the plasma is measured as a function of ion mass with a time-of-flight ion detector. The total number ions impacting the substrate is measured with a Faraday dosimetry system. An implant profile is determined from the measured spectrum of ions. An integrated dose is determined from the measured total number of ions and the calculated implant profile. At least one plasma doping parameter is modified in response to the calculated integrated dose. | 08-13-2009 |
20110309049 | TECHNIQUES FOR PLASMA PROCESSING A SUBSTRATE - Techniques for plasma processing a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a method comprising introducing a feed gas proximate to a plasma source, where the feed gas may comprise a first and second species, where the first and second species have different ionization energies; providing a multi-level RF power waveform to the plasma source, where the multi-level RF power waveform has at least a first power level during a first pulse duration and a second power level during a second pulse duration, where the second power level may be different from the first power level; ionizing the first species of the feed gas during the first pulse duration; ionizing the second species during the second pulse duration; and providing a bias to the substrate during the first pulse duration. | 12-22-2011 |
Bernard G. Lindsay, Danvers, MA US
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20090000946 | PLASMA PROCESSING WITH ENHANCED CHARGE NEUTRALIZATION AND PROCESS CONTROL - A plasma processing apparatus includes a platen that supports a substrate for plasma processing. A RF power supply generates a multi-level RF power waveform at an output having at least a first period with a first power level and a second period with a second power level. A RF plasma source having an electrical input that is electrically connected to the output of the RF power supply generates at least a first RF plasma with the first RF power level during the first period and a second RF plasma with the second RF power level during the second period. A bias voltage power supply having an output that is electrically connected to the platen generates a bias voltage waveform that is sufficient to attract ions in the plasma to the substrate for plasma processing. | 01-01-2009 |
20090001890 | Apparatus for Plasma Processing a Substrate and a Method Thereof - An apparatus for processing a substrate includes a pulsed power supply that generates a waveform having a first period with a first power level and a second period with a second power level. A plasma source generates a first plasma during the first period and a second plasma during the second period. The first plasma may have higher plasma density than the second plasma. A bias voltage power supply generates a bias voltage waveform at an output that is electrically connected to a platen which supports a substrate. The bias voltage waveform having a first voltage and a second voltage may be coupled to the substrate. The first voltage may have more negative potential than the second voltage. | 01-01-2009 |
20100062547 | TECHNIQUE FOR MONITORING AND CONTROLLING A PLASMA PROCESS WITH AN ION MOBILITY SPECTROMETER - A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber, and a monitoring system including an ion mobility spectrometer configured to monitor a condition of the plasma. A monitoring method including generating a plasma in a process chamber of a plasma processing apparatus, supporting a workpiece on a platen in the process chamber, and monitoring a condition of the plasma with an ion mobility spectrometer is also provided. | 03-11-2010 |
20100159120 | PLASMA ION PROCESS UNIFORMITY MONITOR - An ion uniformity monitoring device is positioned within a plasma process chamber and includes a plurality of sensors located above and a distance away from a workpiece within the chamber. The sensors are configured to detect the number of secondary electrons emitted from a surface of the workpiece exposed to a plasma process. Each sensor outputs a current signal proportional to the detected secondary electrons. A current comparator circuit outputs a processed signal resulting from each of the plurality of current signals. The detection of the secondary electrons emitted from the workpiece during plasma processing is indicative of the uniformity characteristic across the surface of the workpiece and may be performed in situ and during on-line plasma processing. | 06-24-2010 |
20110000896 | SYSTEM AND METHOD FOR SELECTIVELY CONTROLLING ION COMPOSITION OF ION SOURCES - A method is disclosed for adjusting the composition of plasmas used in plasma doping, plasma deposition and plasma etching techniques. The disclosed method enables the plasma composition to be controlled by modifying the energy distribution of the electrons present in the plasma. Energetic electrons are produced in the plasma by accelerating electrons in the plasma using very fast voltage pulses. The pulses are long enough to influence the electrons, but too fast to affect the ions significantly. Collisions between the energetic electrons and the constituents of the plasma result in changes in the plasma composition. The plasma composition can then be optimized to meet the requirements of the specific process being used. This can entail changing the ratio of ion species in the plasma, changing the ratio of ionization to dissociation, or changing the excited state population of the plasma. | 01-06-2011 |
20130092529 | PLASMA PROCESSING WITH ENHANCED CHARGE NEUTRALIZATION AND PROCESS CONTROL - Plasma processing with enhanced charge neutralization and process control is disclosed. In accordance with one exemplary embodiment, the plasma processing may be achieved as a method of plasma processing a substrate. The method may comprise providing the substrate proximate a plasma source; applying to the plasma source a first RF power level during a first period and a second RF power level during a second period, the first and second RF power levels being greater than zero RF power level, wherein the second RF power level is greater than the first RF power level; generating with the plasma source a first plasma during the first period and a second plasma during the second period; and applying to the substrate a first bias voltage during the first period and a second bias voltage during the second period, wherein the first voltage has more negative potential than the second voltage. | 04-18-2013 |
Bernard Gregory Lindsay, Danvers, MA US
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20080314731 | TECHNIQUES FOR DETECTING WAFER CHARGING IN A PLASMA PROCESSING SYSTEM - Techniques for detecting wafer charging in a plasma processing system are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for detecting wafer charging in a plasma processing system. The apparatus may comprise a plasma chamber to produce a plasma discharge above a wafer in the plasma chamber. The apparatus may also comprise a biasing circuit to bias the wafer to draw ions from the plasma discharge towards the wafer. The apparatus may further comprise a detection mechanism to detect charge buildup on the wafer by measuring an electric field in one or more designated locations near a top surface of the wafer. | 12-25-2008 |
David Scott Lindsay, Marshfield, MA US
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20150163206 | CUSTOMIZABLE SECURE DATA EXCHANGE ENVIRONMENT - In embodiments, the disclosure provides a secure data exchange system that includes a data management facility; and a plurality of data storage nodes. The data management facility manages content sharing between entities of data stored in the data storage nodes, wherein the data is stored by a user of a first entity and comprises content and metadata. The data management facility only has access to the metadata of the user data for managing of the data in the plurality of data storage nodes and not the content. The data management facility may be geographically distributed at a plurality of data management sites and the data storage nodes may exist inside and outside of a firewall of the first entity. | 06-11-2015 |
Stace Lindsay, Cambridge, MA US
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20110077208 | EXPRESSION OF SECRETED HUMAN ALPHA-FETOPROTEIN IN TRANSGENIC ANIMALS - The invention features a process of expressing secreted recombinant human alpha-fetoprotein (rHuAFP) in the milk or urine of transgenic mammals. | 03-31-2011 |
20120259093 | EXPRESSION OF SECRETED HUMAN ALPHA-FETOPROTEIN IN TRANSGENIC ANIMALS - The invention features a process of expressing secreted recombinant human alpha-fetoprotein (rHuAFP) in the milk or urine of transgenic mammals. | 10-11-2012 |
20130131317 | EXPRESSION OF SECRETED HUMAN ALPHA-FETOPROTEIN IN TRANSGENIC ANIMALS - The invention features a process of expressing secreted recombinant human alpha-fetoprotein (rHuAFP) in the milk or urine of transgenic mammals. | 05-23-2013 |