Patent application number | Description | Published |
20080200028 | METHODS OF POSITIONING AND/OR ORIENTING NANOSTRUCTURES - Methods of positioning and orienting nanostructures, and particularly nanowires, on surfaces for subsequent use or integration. The methods utilize mask based processes alone or in combination with flow based alignment of the nanostructures to provide oriented and positioned nanostructures on surfaces. Also provided are populations of positioned and/or oriented nanostructures, devices that include populations of positioned and/or oriented nanostructures, systems for positioning and/or orienting nanostructures, and related devices, systems and methods. | 08-21-2008 |
20080293244 | Methods of Positioning and/or Orienting Nanostructures - Methods of positioning and orienting nanostructures, and particularly nanowires, on surfaces for subsequent use or integration. The methods utilize mask based processes alone or in combination with flow based alignment of the nanostructures to provide oriented and positioned nanostructures on surfaces. Also provided are populations of positioned and/or oriented nanostructures, devices that include populations of positioned and/or oriented nanostructures, systems for positioning and/or orienting nanostructures, and related devices, systems and methods. | 11-27-2008 |
20090032828 | III-Nitride Device Grown on Edge-Dislocation Template - A semiconductor light emitting device includes a wurtzite III-nitride semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A template layer and a dislocation bending layer are grown before the light emitting layer. The template layer is grown such that at least 70% of the dislocations in the template layer are edge dislocations. At least some of the edge dislocations in the template layer continue into the dislocation bending layer. The dislocation bending layer is grown to have a different magnitude of strain than the template layer. The change in strain at the interface between the template layer and the dislocation bending layer causes at least some of the edge dislocations in the template layer to bend to a different orientation in the dislocation bending layer. Semiconductor material grown above the bent edge dislocations may exhibit reduced strain. | 02-05-2009 |
20090050974 | Method, System and Apparatus for Gating Configurations and Improved Contacts in Nanowire-Based Electronic Devices - Methods, systems, and apparatuses for electronic devices having improved gate structures are described. An electronic device includes at least one nanowire. A gate contact is positioned along at least a portion of a length of the at least one nanowire. A dielectric material layer is between the gate contact and the at least one nanowire. A source contact and a drain contact are in contact with the at least one nanowire. At least a portion of the source contact and/or the drain contact overlaps with the gate contact along the nanowire the length. In another aspect, an electronic device includes a nanowire having a semiconductor core surrounded by an insulating shell layer. A ring shaped first gate region surrounds the nanowire along a portion of the length of the nanowire. A second gate region is positioned along the length of the nanowire between the nanowire and the substrate. A source contact and a drain contact are coupled to the semiconductor core of the nanowire at respective exposed portions of the semiconductor core. | 02-26-2009 |
20090075468 | System and Process for Producing Nanowire Composites and Electronic Substrates Therefrom - The present invention relates to a system and process for producing a nanowire-material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composite. The process further optionally includes separating the nanowire-material composite from the substrate to form a freestanding nanowire-material composite. The freestanding nanowire material composite is optionally further processed into a electronic substrate. A variety of electronic substrates can be produced using the methods described herein. For example, a multi-color light-emitting diode can be produced from multiple, stacked layers of nanowire-material composites, each composite layer emitting light at a different wavelength. | 03-19-2009 |
20100075468 | Methods, devices and compositions for depositing and orienting nanostructures - Methods and systems for depositing nanomaterials onto a receiving substrate and optionally for depositing those materials in a desired orientation, that comprise providing nanomaterials on a transfer substrate and contacting the nanomaterials with an adherent material disposed upon a surface or portions of a surface of a receiving substrate. Orientation is optionally provided by moving the transfer and receiving substrates relative to each other during the transfer process. | 03-25-2010 |
20100144103 | Method, System and Apparatus for Gating Configurations and Improved Contacts in Nanowire-Based Electronic Devices - Methods, systems, and apparatuses for electronic devices having improved gate structures are described. An electronic device includes at least one nanowire. A gate contact is positioned along at least a portion of a length of the at least one nanowire. A dielectric material layer is between the gate contact and the at least one nanowire. A source contact and a drain contact are in contact with the at least one nanowire. At least a portion of the source contact and/or the drain contact overlaps with the gate contact along the nanowire the length. In another aspect, an electronic device includes a nanowire having a semiconductor core surrounded by an insulating shell layer. A ring shaped first gate region surrounds the nanowire along a portion of the length of the nanowire. A second gate region is positioned along the length of the nanowire between the nanowire and the substrate. A source contact and a drain contact are coupled to the semiconductor core of the nanowire at respective exposed portions of the semiconductor core. | 06-10-2010 |
20100155696 | Large-Area Nanoenabled Macroelectronic Substrates and Uses Therefor - A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described. | 06-24-2010 |
20100167512 | Methods for Nanostructure Doping - Methods of doping nanostructures, such as nanowires, are disclosed. The methods provide a variety of approaches for improving existing methods of doping nanostructures. The embodiments include the use of a sacrificial layer to promote uniform dopant distribution within a nanostructure during post-nanostructure synthesis doping. In another embodiment, a high temperature environment is used to anneal nanostructure damage when high energy ion implantation is used. In another embodiment rapid thermal annealing is used to drive dopants from a dopant layer on a nanostructure into the nanostructure. In another embodiment a method for doping nanowires on a plastic substrate is provided that includes depositing a dielectric stack on a plastic substrate to protect the plastic substrate from damage during the doping process. An embodiment is also provided that includes selectively using high concentrations of dopant materials at various times in synthesizing nanostructures to realize novel crystallographic structures within the resulting nanostructure. | 07-01-2010 |
20100264454 | SEMICONDUCTOR LIGHT EMITTING DEVICE GROWING ACTIVE LAYER ON TEXTURED SURFACE - In accordance with embodiments of the invention, at least partial strain relief in a light emitting layer of a III-nitride light emitting device is provided by configuring the surface on which at least one layer of the device grows such that the layer expands laterally and thus at least partially relaxes. This layer is referred to as the strain-relieved layer. In some embodiments, the light emitting layer itself is the strain-relieved layer, meaning that the light emitting layer is grown on a surface that allows the light emitting layer to expand laterally to relieve strain. In some embodiments, a layer grown before the light emitting layer is the strain-relieved layer. In a first group of embodiments, the strain-relieved layer is grown on a textured surface. | 10-21-2010 |
20100285972 | Nanofiber surfaces for use in enhanced surface area applications - This invention provides novel nanofiber enhanced surface area substrates and structures comprising such substrates, as well as methods and uses for such substrates. | 11-11-2010 |
20100323500 | System and Process for Producing Nanowire Composites and Electronic Substrates Therefrom - The present invention relates to a system and process for producing a nanowire-material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composite. The process further optionally includes separating the nanowire-material composite from the substrate to form a freestanding nanowire-material composite. The freestanding nanowire material composite is optionally further processed into a electronic substrate. A variety of electronic substrates can be produced using the methods described herein. For example, a multi-color light-emitting diode can be produced from multiple, stacked layers of nanowire-material composites, each composite layer emitting light at a different wavelength. | 12-23-2010 |
20110045660 | Large-Area Nanoenabled Macroelectronic Substrates and Uses Therefor - A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described. | 02-24-2011 |
20110057213 | III-NITRIDE LIGHT EMITTING DEVICE WITH CURVAT1JRE CONTROL LAYER - A semiconductor structure comprises a III-nitride light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure further comprises a curvature control layer grown on a first layer. The curvature control layer is disposed between the n-type region and the first layer. The curvature control layer has a theoretical a-lattice constant less than the theoretical a-lattice constant of GaN. The first layer is a substantially single crystal layer. | 03-10-2011 |
20110177638 | SEMICONDUCTOR LIGHT EMITTING DEVICE WITH CURVATURE CONTROL LAYER - A semiconductor structure is grown on a top surface of a growth substrate. The semiconductor structure comprises a III-nitride light emitting layer disposed between an n-type region and a p-type region. A curvature control layer is disposed in direct contact with the growth substrate. The growth substrate has a thermal expansion coefficient less than a thermal expansion coefficient of GaN and the curvature control layer has a thermal expansion coefficient greater than the thermal expansion coefficient of GaN. | 07-21-2011 |
20110312163 | Large Area Nanoenabled Macroelectronic Substrates and Uses Therefor - A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described. | 12-22-2011 |
20120248577 | Controlled Doping in III-V Materials - A method according to embodiments of the invention includes epitaxially growing a III-nitride semiconductor layer from a gas containing gallium, a gas containing nitrogen, and a gas containing indium. The concentration of indium in the III-nitride semiconductor structure is greater than zero and less than 10 | 10-04-2012 |
20120264248 | III-NITRIDE LIGHT EMITTING DEVICE WITH CURVATURE CONTROL LAYER - A semiconductor structure comprises a III-nitride light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure further comprises a curvature control layer grown on a first layer. The curvature control layer is disposed between the n-type region and the first layer. The curvature control layer has a theoretical a-lattice constant less than the theoretical a-lattice constant of GaN. The first layer is a substantially single crystal layer. | 10-18-2012 |
20120309172 | Epitaxial Lift-Off and Wafer Reuse - A method of reusing a III-nitride growth substrate according to embodiments of the invention includes epitaxially growing a III-nitride semiconductor structure on a III-nitride substrate. The III-nitride semiconductor structure includes a sacrificial layer and an additional layer grown over the sacrificial layer. The sacrificial layer is implanted with at least one implant species. The III-nitride substrate is separated from the additional layer at the implanted sacrificial layer. In some embodiments the III-nitride substrate is GaN and the sacrificial layer is GaN, an aluminum-containing III-nitride layer, or an indium-containing III-nitride layer. In some embodiments, the III-nitride substrate is separated from the additional layer by etching the implanted sacrificial layer. | 12-06-2012 |
20130015552 | Electrical Isolation Of High Defect Density Regions In A Semiconductor DeviceAANM Kizilyalli; Isik C.AACI San FranciscoAAST CAAACO USAAGP Kizilyalli; Isik C. San Francisco CA USAANM Bour; David P.AACI CupertinoAAST CAAACO USAAGP Bour; David P. Cupertino CA USAANM Brown; Richard J.AACI Los GatosAAST CAAACO USAAGP Brown; Richard J. Los Gatos CA USAANM Edwards; Andrew P.AACI San JoseAAST CAAACO USAAGP Edwards; Andrew P. San Jose CA USAANM Nie; HuiAACI CupertinoAAST CAAACO USAAGP Nie; Hui Cupertino CA USAANM Romano; Linda T.AACI SunnyvaleAAST CAAACO USAAGP Romano; Linda T. Sunnyvale CA US - Embodiments of the invention include a III-nitride semiconductor layer including a first portion having a first defect density and a second portion having a second defect density. The first defect density is greater than the second defect density. An insulating material is disposed over the first portion. The insulating material is not formed on or is removed from the second portion. | 01-17-2013 |