Lincoln
Lincoln Eramo, Winchester, CA US
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20100124568 | PHARMACEUTICAL ARTICLES COATED WITH LUBRICIOUS COATINGS - The invention provides pills and tablets having lubricious coating deposited over the outer surface of the pills and the tablets. The coating comprises at least one hydrophilic polymer and at least one natural product, such as a natural polymer, a natural resin and/or a natural gum. | 05-20-2010 |
20150148882 | ANTI-THROMBOGENIC MEDICAL DEVICES AND METHODS - Methods for applying layers to medical devices and related devices are provided. Such devices can include stents. For example, the device can include a sidewall and a plurality of pores in the sidewall that are sized to inhibit flow of blood through the sidewall into an aneurysm to a degree sufficient to lead to thrombosis and healing of the aneurysm when the tubular member is positioned in a blood vessel and adjacent to the aneurysm. The device can have an anti-thrombogenic outer layer distributed over at least a portion of the device. | 05-28-2015 |
Lincoln Eramo, Jr., Winchester, CA US
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20090171302 | ENHANCED DURABILITY OF HYDROPHILIC COATINGS - Lubricous coatings, methods for making an using lubricous coatings, and medical device that include lubricious coatings. An example lubricous coating may include includes a hydrophilic polymer, a flow modifier, an acrylic monomer, a photoinitiator, and a solvent. The coating can be used to coat a medical device along an inner surface, an outer surface, or an intermediate surface. | 07-02-2009 |
Lincoln Evan-Beauchamp, Palo Alto, CA US
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20080314035 | Temperature Ladder and Applications Thereof - A reverse flow heat exchanger is combined with an energy source to generate a temperature ladder. This system is used to create temperatures at which particles within a gas flow are combusted. Applications described include cleaning of particle laden gas, raising the temperature of a catalyst, exhaust cleaning and room air cleaning. | 12-25-2008 |
Lincoln Hall, Maracas TT
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20160005983 | ORGANIC PHOTOSENSITIVE DEVICES COMPRISING ARYL SQUARAINES AND METHODS OF MAKING THE SAME - There is disclosed squaraine compounds of formula I: | 01-07-2016 |
Lincoln Johnson, Santa Barbara, CA US
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20130196369 | Methods of Culturing Retinal Pigmented Epithelium Cells, Including Xeno-Free Production, RPE Enrichment, and Cryopreservation - The production of high quality retinal pigmented epithelium (RPE) cells is necessary for research and potential therapeutic uses. Especially desirable are methods for the production of RPE cells using xeno-free culture conditions. Disclosed herein are novel methods for the production of RPE cells from pluripotent cells with high yields, including xeno-free production methods. Also provided are methods of efficiently isolating RPE cells from cultures containing heterogeneous cell types, allowing for substantially pure RPE cell cultures to be established. Additionally, novel methods for the cryopreservation of RPE cells are provided. | 08-01-2013 |
Lincoln Liu, San Jose, CA US
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20140046911 | DE-DUPLICATING ATTACHMENTS ON MESSAGE DELIVERY AND AUTOMATED REPAIR OF ATTACHMENTS - Systems and techniques of de-duplicating file and/or blobs within a file system are presented. In one embodiment, an email system is disclosed wherein the email system receives email messages comprising a set of associated attachments. The system determines whether the associated attachments have been previously stored in the email system, the state of the stored attachment, and if the state of the attachment is appropriate for sharing copies of the attachment, then providing a reference to the attachment upon a request to share the attachment. In another embodiment, the system may detect whether stored attachments are corrupted and, if so, attempt to repair the attachment, and possibly, prior to sharing references to the attachment. | 02-13-2014 |
Lincoln Miara, Cambridge, MA US
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20130304434 | COMPUTING SYSTEM WITH HIGH-THROUGHPUT TOPICAL ANALYSIS FOR SOLID STATE ELECTROLYTE MECHANISM AND METHOD OF OPERATION THEREOF - A computing system includes: a voronoi tessellation formation module configured to form a voronoi tessellation for a solid separator; a modified tessellation generation module, coupled to the voronoi tessellation formation module, configured to: generate a modified tessellation by removing from the voronoi tessellation a node, an edge, or a combination thereof associated with a cation polygon except where the edge is less than an exception threshold, determine a channel dimensionality, a bottleneck size, a critical radius, or a combination thereof based on the modified tessellation; and a viability determination module, coupled to the modified tessellation generation module, configured to determine a viability of the solid separator based on the channel dimensionality, the bottleneck size, the critical radius, or a combination thereof. | 11-14-2013 |
Lincoln Nadauld, Los Altos, CA US
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20140302491 | Ex Vivo Culture, Proliferation and Expansion of Primary Tissue Organoids - Culture systems and methods for long term culture of mammalian tissues are provided. Tissues include but are not limited to lung alveolar tissue, stomach tissue, pancreas tissue, bladder tissue, liver tissue, and kidney tissue. Cultures are initiated with fragments of mammalian tissue, which are then cultured embedded in a gel substrate that provides an air-liquid interface. Cultured explants of the invention can be continuously grown in culture for a year or more, while maintaining features of the tissue including prolonged tissue expansion with proliferation, multilineage differentiation, and recapitulation of cellular and tissue ultrastructure. | 10-09-2014 |
Lincoln O'Riain, Dresden DE
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20090001502 | Semiconductor Devices and Methods of Manufacture Thereof - Semiconductor devices and methods of manufacture thereof are disclosed. In a preferred embodiment, a semiconductor device includes a workpiece having a buried layer disposed beneath a top portion of the workpiece. An isolation ring structure is disposed within the top portion of the workpiece extending completely through at least a portion of the buried layer, the isolation ring structure comprising a ring having an interior region. A diffusion confining structure is disposed within the interior region of the isolation ring structure. A conductive region is disposed within the top portion of the workpiece within a portion of the interior of the isolation ring structure, the conductive region comprising at least one dopant element implanted and diffused into the top portion of the workpiece. The diffusion confining structure defines at least one edge of the conductive region, and the conductive region is coupled to the buried layer. | 01-01-2009 |
20100207238 | Semiconductor Devices and Methods of Manufacture Thereof - Semiconductor devices and methods of manufacture thereof are disclosed. In a preferred embodiment, a semiconductor device includes a workpiece having a buried layer disposed beneath a top portion of the workpiece. An isolation ring structure is disposed within the top portion of the workpiece extending completely through at least a portion of the buried layer, the isolation ring structure comprising a ring having an interior region. A diffusion confining structure is disposed within the interior region of the isolation ring structure. A conductive region is disposed within the top portion of the workpiece within a portion of the interior of the isolation ring structure, the conductive region comprising at least one dopant element implanted and diffused into the top portion of the workpiece. The diffusion confining structure defines at least one edge of the conductive region, and the conductive region is coupled to the buried layer. | 08-19-2010 |
20110309441 | INTEGRATED SEMICONDUCTOR DEVICE HAVING AN INSULATING STRUCTURE AND A MANUFACTURING METHOD - An integrated semiconductor device is provided. The integrated semiconductor device has a first semiconductor region of a second conductivity type, a second semiconductor region of a first conductivity type forming a pn-junction with the first semiconductor region, a non-monocrystalline semiconductor layer of the first conductivity type arranged on the second semiconductor region, a first well and at least one second well of the first conductivity type arranged on the non-monocrystalline semiconductor layer and an insulating structure insulating the first well from the at least one second well and the non-monocrystalline semiconductor layer. Further, a method for forming a semiconductor device is provided. | 12-22-2011 |
20140027848 | Lateral Semiconductor Device and Manufacturing Method Therefor - A method produces a semiconductor device including a semiconductor body, an electrode thereon, and an insulating structure insulating the electrode from the semiconductor body. The semiconductor body includes a first contact region of a first conductivity type, a body region of a second conductivity type, a drift region of the first conductivity type, and a second contact region having a higher maximum doping concentration than the drift region. The insulating structure includes a gate dielectric portion forming a first horizontal interface. with the drift region and has a first maximum vertical extension A field dielectric portion forms with the drift region second and third horizontal interfaces arranged below the main surface. A second maximum vertical extension of the field dielectric portion is larger than the first maximum vertical extension. A third maximum vertical extension of the field dielectric portion is larger than the second maximum vertical extension. | 01-30-2014 |
20140159154 | Semiconductor Device with an Insulating Structure for Insulating an Electrode from a Semiconductor Body - A semiconductor device includes an electrode arranged on a main surface of a semiconductor body and an insulating structure insulating the electrode from the semiconductor body. The insulating structure includes in a vertical cross-section a gate dielectric portion forming a first horizontal interface at least with a drift region of the device and having a first maximum vertical extension between the first horizontal interface and the electrode, and a field dielectric portion forming with the drift region second, third and fourth horizontal interfaces. The second through fourth horizontal interfaces are arranged below the main surface. The third horizontal interface is arranged between the second and fourth horizontal interfaces. A second maximum vertical extension is larger than the first maximum vertical extension and a third maximum vertical extension is larger than the second maximum vertical extension. The electrode only partially overlaps the third horizontal interface. | 06-12-2014 |
20140287560 | INTEGRATED SEMICONDUCTOR DEVICE HAVING AN INSULATING STRUCTURE AND A MANUFACTURING METHOD - An integrated semiconductor device is provided. The integrated semiconductor device has a first semiconductor region of a second conductivity type, a second semiconductor region of a first conductivity type forming a pn-junction with the first semiconductor region, a non-monocrystalline semiconductor layer of the first conductivity type arranged on the second semiconductor region, a first well and at least one second well of the first conductivity type arranged on the non-monocrystalline semiconductor layer and an insulating structure insulating the first well from the at least one second well and the non-monocrystalline semiconductor layer. Further, a method for forming a semiconductor device is provided. | 09-25-2014 |
Lincoln Santos Neves JÚnior, FlorianÓpolis-Sc BR
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20150314204 | UNDULATING TRACK AND MECHANISMS FOR FORMING TRACK UNDULATIONS - “UNDULATING TRACK AND MECHANISMS FOR FORMATION OF THE WAVES ON THIS TRACK”, describes apparatus that can be used with recreational purposes, sports, industrial, among other applications, comprising a rolling track or raceway ( | 11-05-2015 |
Lincoln Tsai, El Monte, CA US
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20110056579 | Temporary sealer for pipe repair and construction - A temporary sealer for pipe repair and construction includes a sealing head, and a breakable film. The sealing head has a tubular shape and a size and shape corresponding to an inner diameter of a pipe. The breakable film is formed at the sealing face of the sealing head, wherein the breakable film forms a water barrier for temporarily restricting a flow of water passing through the sealing head within the pipe when the sealing head is slid into the pipe. The breakable film is inevitably torn apart in responsive to a predetermined water pressure for enabling the water flow passing through the sealing head within the pipe. Therefore, it not only provides a way to efficiently block the water flow when the water pipe needs construction, but also provides an apparatus involving the flow system when the water pipe system is finished with construction. | 03-10-2011 |
Lincoln Tseng, Taipei TW
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20120326846 | ELECTRONIC TAG TIME-SHARING CONTROL SYSTEM AND METHOD THEREOF - The present invention discloses an electronic tag time sharing control system and a method thereof, and the system comprises a server, at least one coordinator and a plurality of wireless electronic tags. The server transmits a time-sharing control signal. The coordinator and the server form a wireless connection for receiving and transmitting the time-sharing control signal. The wireless electronic tags and the coordinators form a wireless connection. After each wireless electronic tag receives the time-sharing control signal, different sleep cycle and wakeup timing are generated to update display information sequentially. A portion of the wireless electronic tag is situated at a sleep status and a portion of the wireless electronic tag is situated at a standby status to receive the update display information, so as to achieve the effects of saving bandwidth, reducing packet collisions and extending the service life of the wireless electronic tag. | 12-27-2012 |